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52 条记录 (耗时 0.024 秒)

    Luminescent diode chip that is flip-chip mounted on a carrier, and method for production thereof
    42.
    发明授权
    Luminescent diode chip that is flip-chip mounted on a carrier, and method for production thereof 有权
    背面安装在载体上的发光二极管芯片及其制造方法

    公开(公告)号：US07663155B2

    公开(公告)日：2010-02-16

    申请号：US11184239

    申请日：2005-07-18

    申请人： Volker Harle ,  Dominik Eisert

    发明人： Volker Harle ,  Dominik Eisert

    IPC分类号： H01L33/00

    CPC分类号： H01L33/62 ,  H01L2224/48463 ,  H01L2924/01068 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A luminescent diode chip for flip-chip mounting on a carrier, having a conductive substrate (12), a semiconductor body (14) that contains a photon-emitting active zone and that is joined by an underside to the substrate (12), and a contact (18), disposed on a top side of the semiconductor body (14), for making an electrically conductive connection with the carrier (30) upon the flip-chip mounting of the chip, whereby either the carrier is solder covered or a layer of solder is applied to the contact. An insulating means (40, 42, 44, 46, 48) is provided on the chip, for electrically insulating free faces of the semiconductor body (14) and free surfaces of the substrate (12) from the solder.

    摘要翻译： 一种用于倒装芯片安装在载体上的发光二极管芯片，具有导电基板（12），包含光子发射活性区并通过下侧连接到基板（12）的半导体本体（14），以及 设置在所述半导体本体（14）的顶侧上的用于在所述芯片的倒装芯片安装时与所述载体（30）进行导电连接的触点（18），由此所述载体被焊接覆盖或 将焊料层施加到触点。 绝缘装置（40,42,44,46,48）设置在芯片上，用于使半导体本体（14）的自由面和衬底（12）与焊料的自由表面电绝缘。

    Optoelectronic Component and Package For an Optoelectronic Component
    43.
    发明申请
    Optoelectronic Component and Package For an Optoelectronic Component 有权
    光电元件的光电元件和封装

    公开(公告)号：US20080197368A1

    公开(公告)日：2008-08-21

    申请号：US11575797

    申请日：2005-09-28

    申请人： Volker Harle

    发明人： Volker Harle

    IPC分类号： H01L33/00

    CPC分类号： H01L33/507 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip and a chip encapsulating element, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body. The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.

    摘要翻译： 具有适于发射主要电磁辐射的半导体芯片的光电子部件，具有用于接收半导体芯片的凹部和用于半导体芯片和芯片封装元件的外部电连接的电引线的基本封装体，其包围 半导体芯片在凹槽中。 基本封装体至少部分地透射至少部分主要辐射，并且半导体芯片的光轴穿过基本封装主体。 基本封装主体包括发光转换材料，其适于将至少部分初级辐射转换成与初级辐射相比至少部分变化的波长的次级辐射。

    Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component
    47.
    发明申请
    Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component 有权
    辐射发射半导体芯片，其制造方法和辐射发射部件

    公开(公告)号：US20050017258A1

    公开(公告)日：2005-01-27

    申请号：US10491304

    申请日：2002-09-27

    申请人： Michael Fehrer ,  Volker Harle ,  Frank Kuhn ,  Ulrich Zehnder

    发明人： Michael Fehrer ,  Volker Harle ,  Frank Kuhn ,  Ulrich Zehnder

    IPC分类号： H01L33/20 ,  H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/20 ,  H01L24/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip, having a multilayer structure (100) containing a radiation-emitting active layer (10), and having a window layer (20), which is transmissive to a radiation emitted by the active layer (10) and is arranged downstream of the multilayer structure (100) in the direction of a main radiating direction of the semiconductor component. The window layer (20) has at least one peripheral side area (21), which, in the course from a first main area (22) facing the multilayer structure (100) in the direction toward a second main area (23) remote from the multilayer structure (100), firstly has a first side area region (24) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (22). A peripheral side area (11) of the multilayer structure (100) and at least a part of the beveled, curved or stepped first side area region (24) are coated with a continuous electrically insulating layer (30). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.

    摘要翻译： 一种辐射发射半导体芯片，其具有包含发射有机层（10）的多层结构（100），并且具有透过所述有源层（10）发射的辐射的窗口层（20），并且是窗口层 布置在所述多层结构（100）的所述半导体部件的主辐射方向的方向上。 所述窗口层（20）具有至少一个外围侧区域（21），所述至少一个周边区域沿着朝向远离所述多层结构（100）的第二主区域（23）的方向从所述多层结构（100）的第一主区域（22） 多层结构（100）首先具有斜面，弯曲或阶梯状的第一侧面区域（24），使得窗口层相对于第一主区域（22）的尺寸变宽。 所述多层结构（100）的外围侧区域（11）和所述倾斜的，弯曲的或阶梯状的第一侧区域区域（24）的至少一部分被涂覆有连续的电绝缘层（30）。 公开了具有这种类型的芯片的辐射发射部件，并且还公开了一种用于同时产生多个这种芯片的方法。

    Radiation-Emitting Thin-Film Semiconductor Chip
    49.
    发明申请
    Radiation-Emitting Thin-Film Semiconductor Chip 有权
    辐射发射薄膜半导体芯片

    公开(公告)号：US20080035941A1

    公开(公告)日：2008-02-14

    申请号：US10572655

    申请日：2003-09-26

    申请人： Volker Harle

    发明人： Volker Harle

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/46

    摘要： A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (12), which contains an active, radiation-generating layer (14) and has a first main face (16) and a second main face (18)—remote from the first main face—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main face (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main face (18) of the multilayer structure is patterned one- or two-dimensionally with convex elevations (26).

    摘要翻译： 一种具有外延多层结构（12）的辐射发射薄膜半导体芯片，其包含有源辐射产生层（14）并具有第一主面（16）和第二主面（18） 第一主面 - 用于耦合在有源辐射产生层中产生的辐射。 此外，多层结构（12）的第一主面（16）耦合到反射层或界面，并且邻接多层结构的第二主面（18）的多层结构的区域（22）被图案化 一个或二维地具有凸起高度（26）。

    Method for producing a semiconductor component
    50.
    发明申请
    Method for producing a semiconductor component 有权
    半导体部件的制造方法

    公开(公告)号：US20060246687A1

    公开(公告)日：2006-11-02

    申请号：US10544306

    申请日：2004-01-27

    申请人： Stephan Kaiser ,  Volker Harle ,  Berhold Hahn

    发明人： Stephan Kaiser ,  Volker Harle ,  Berhold Hahn

    IPC分类号： H01L21/46

    CPC分类号： H01L21/268 ,  H01L21/7806 ,  H01L33/0079 ,  H01L2224/83001

    摘要： A method for producing a semiconductor component, in which a semiconductor layer (2) is separated from a substrate (1) by irradiation with laser pulses (6), the pulse duration of the laser pulses (6) being less than or equal to 10 ns. The laser pulses (6) have a spatial beam profile (7) with a flank slope chosen to be gentle enough to prevent cracks in the semiconductor layer (2) that arise as a result of thermally induced lateral stresses, during the separation of semiconductor layer (2) and substrate (1).

    摘要翻译： 一种半导体部件的制造方法，其中半导体层（2）通过照射激光脉冲（6）与基板（1）分离，激光脉冲（6）的脉冲持续时间小于或等于10 ns。 激光脉冲（6）具有空间光束轮廓（7），其侧翼斜面被选择为足够温和以防止在半导体层分离期间由于热诱导的横向应力而产生的半导体层（2）中的裂纹 （2）和基板（1）。