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    Process for producing a semiconductor chip
    2.
    发明申请
    Process for producing a semiconductor chip 有权
    半导体芯片的制造方法

    公开(公告)号：US20060172506A1

    公开(公告)日：2006-08-03

    申请号：US11314447

    申请日：2005-12-20

    申请人： Georg Bruderl ,  Volker Harle

    发明人： Georg Bruderl ,  Volker Harle

    IPC分类号： H01L21/76 ,  H01L21/30

    CPC分类号： H01L21/76254 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/405

    摘要： In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a main surface (8) of the growth substrate (1), is formed in the growth substrate (1) by ion implantation, the ion implantation taking place through the functional semiconductor layer sequence (2). Then, a handle substrate (6) is applied to the functional semiconductor layer sequence (2), and a part of the growth substrate (1) which is remote from the handle substrate (6) as seen from the separating zone (4), is detached along the separating zone (4).

    摘要翻译： 在制造半导体芯片的工艺中，在生长衬底（1）上外延生长功能半导体层序列（2）。 然后，通过离子注入在生长衬底（1）中形成平行于生长衬底（1）的主表面（8）平行的分离区（4），通过功能半导体层发生离子注入 序列（2）。 然后，从功能半导体层序列（2）施加手柄基板（6），从分离区域（4）观察到远离手柄基板（6）的生长基板（1）的一部分， 沿分离区（4）分离。

    Method for Production of a Radiation-Emitting Semiconductor Chip
    7.
    发明申请
    Method for Production of a Radiation-Emitting Semiconductor Chip 有权
    辐射发射半导体芯片的制造方法

    公开(公告)号：US20080093611A1

    公开(公告)日：2008-04-24

    申请号：US11579194

    申请日：2004-04-29

    申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

    发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Harle

    IPC分类号： H01L21/04 ,  H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/0079

    摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated. The separation surface—provided with the residues—of the semiconductor layer sequence with a dry etching method, a gaseous etchant or a wet-chemical etchant, wherein the anisotropic residues are at least temporarily used as an etching mask. A semiconductor chip is produced according to such a method.

    摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法。 半导体层序列在衬底上生长。 在半导体层序列上形成或施加镜层，其反射回到半导体层序列中，半导体层序列在其操作期间在半导体层序列中产生的辐射的至少一部分并且被指向镜层。 通过剥离方法将半导体层序列与衬底分离，其中半导体层序列中的分离区域至少部分地被分解，使得分离区的成分的各向异性残留物 分离层的金属成分保留在半导体层序列的分离表面，基板从该分离表面分离。 具有干蚀刻方法的半导体层序列的残留物的分离表面，气体蚀刻剂或湿化学蚀刻剂，其中各向异性残余物至少暂时用作蚀刻掩模。 根据这种方法制造半导体芯片。

    Thin Film Led Comprising a Current-Dispersing Structure
    9.
    发明申请
    Thin Film Led Comprising a Current-Dispersing Structure 有权
    包含电流分散结构的薄膜引线

    公开(公告)号：US20070278508A1

    公开(公告)日：2007-12-06

    申请号：US10587666

    申请日：2005-01-25

    申请人： Johannes Baur ,  Berthold Hahn ,  Volker Harle ,  Raimund Oberschmid ,  Andreas Weimar

    发明人： Johannes Baur ,  Berthold Hahn ,  Volker Harle ,  Raimund Oberschmid ,  Andreas Weimar

    IPC分类号： H01L33/00

    CPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).

    摘要翻译： 一种薄膜LED，包括在主辐射方向（15）上发射电磁辐射（19）的由氮化物化合物半导体制成的有源层（7）。 电流扩展层（9）设置在主辐射方向（15）的有源层（7）的下游，并由第一氮化物化合物半导体材料制成。 在主辐射方向（15）处发射的辐射通过主区域（14）耦合出来，并且在主区域（14）上布置有第一接触层（11,12,13）。 通过形成二维电子气体或空穴气体来增加电流膨胀层（9）的横向电导率。 二维电子气体或空穴气体有利地通过将至少一层由第二氮化物化合物半导体材料制成的层（10）嵌入到电流膨胀层（9）中而形成。

    Method for fabricating a plurality of semiconductor bodies, and electronic semiconductor body
    10.
    发明授权
    Method for fabricating a plurality of semiconductor bodies, and electronic semiconductor body 有权
    制造多个半导体主体的方法和电子半导体本体

    公开(公告)号：US07294520B2

    公开(公告)日：2007-11-13

    申请号：US10780317

    申请日：2004-02-17

    申请人： Volker Harle ,  Hans-Jürgen Lugauer ,  Stephan Miller ,  Stefan Bader

    发明人： Volker Harle ,  Hans-Jürgen Lugauer ,  Stephan Miller ,  Stefan Bader

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007

    摘要： A method for fabricating a plurality of semiconductor bodies, in particular based on nitride compound semiconductor material. The method includes forming a mask layer (3) over a substrate (1) or over an initial layer (2), which mask layer has a plurality of windows (4) leading to the substrate (1) or to the initial layer (2), etching back the substrate (1) or the initial layer (2) in the windows (4), in such a manner that pits (41) are formed in the substrate (1) or in the initial layer (2) starting from these windows. The semiconductor material (5) is grown onto the substrate (1) or onto the initial layer (2), in such a manner that lateral growth is promoted and the semiconductor material initially grows primarily from the flanks (43) of the pits (41) toward the center (42) of the pits (41) where they form a coalescence region (61), so that defects in the substrate (1) or in the initial layer (2) which impinge on the flanks (43) of the pits (41) bend off toward the center of the pits (41) in the semiconductor material, and then, starting from the windows (4), the semiconductor material grows over the mask layer (3) and grows together over the mask layer (3) between adjacent windows (4), where it forms a further coalescence region (62). A component layer sequence (8) is grown onto the semiconductor material (5).

    摘要翻译： 一种制造多个半导体器件的方法，特别是基于氮化物半导体材料。 该方法包括在衬底（1）上或初始层（2）上形成掩模层（3），该掩模层具有通向衬底（1）的多个窗口（4）或初始层（2） ），以在基板（1）或初始层（2）中形成凹坑（41）的方式在窗口（4）中回蚀刻基板（1）或初始层（2） 这些窗口。 半导体材料（5）以促进横向生长并且半导体材料最初主要从凹坑（41）的侧面（43）生长的方式生长到基底（1）上或初始层（2）上 ）朝向其形成聚结区域（61）的凹坑（41）的中心（42），使得衬底（1）或初始层（2）中的冲击在侧壁（43）上的缺陷 凹坑（41）朝向半导体材料中的凹坑（41）的中心弯曲，然后从窗口（4）开始，半导体材料在掩模层（3）上生长并在掩模层上一起生长（ 3）在相邻窗口（4）之间，其中它形成另外的聚结区域（62）。 组分层序列（8）生长到半导体材料（5）上。