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    Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component
    1.
    发明申请
    Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component 有权
    辐射发射半导体芯片，其制造方法和辐射发射部件

    公开(公告)号：US20050017258A1

    公开(公告)日：2005-01-27

    申请号：US10491304

    申请日：2002-09-27

    申请人： Michael Fehrer ,  Volker Harle ,  Frank Kuhn ,  Ulrich Zehnder

    发明人： Michael Fehrer ,  Volker Harle ,  Frank Kuhn ,  Ulrich Zehnder

    IPC分类号： H01L33/20 ,  H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/20 ,  H01L24/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip, having a multilayer structure (100) containing a radiation-emitting active layer (10), and having a window layer (20), which is transmissive to a radiation emitted by the active layer (10) and is arranged downstream of the multilayer structure (100) in the direction of a main radiating direction of the semiconductor component. The window layer (20) has at least one peripheral side area (21), which, in the course from a first main area (22) facing the multilayer structure (100) in the direction toward a second main area (23) remote from the multilayer structure (100), firstly has a first side area region (24) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (22). A peripheral side area (11) of the multilayer structure (100) and at least a part of the beveled, curved or stepped first side area region (24) are coated with a continuous electrically insulating layer (30). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.

    摘要翻译： 一种辐射发射半导体芯片，其具有包含发射有机层（10）的多层结构（100），并且具有透过所述有源层（10）发射的辐射的窗口层（20），并且是窗口层 布置在所述多层结构（100）的所述半导体部件的主辐射方向的方向上。 所述窗口层（20）具有至少一个外围侧区域（21），所述至少一个周边区域沿着朝向远离所述多层结构（100）的第二主区域（23）的方向从所述多层结构（100）的第一主区域（22） 多层结构（100）首先具有斜面，弯曲或阶梯状的第一侧面区域（24），使得窗口层相对于第一主区域（22）的尺寸变宽。 所述多层结构（100）的外围侧区域（11）和所述倾斜的，弯曲的或阶梯状的第一侧区域区域（24）的至少一部分被涂覆有连续的电绝缘层（30）。 公开了具有这种类型的芯片的辐射发射部件，并且还公开了一种用于同时产生多个这种芯片的方法。

    Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component
    2.
    发明授权
    Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component 有权
    辐射发射半导体芯片，其制造方法和辐射发射部件

    公开(公告)号：US07446344B2

    公开(公告)日：2008-11-04

    申请号：US10491304

    申请日：2002-09-27

    申请人： Michael Fehrer ,  Volker Harle ,  Frank Kuhn ,  Ulrich Zehnder

    发明人： Michael Fehrer ,  Volker Harle ,  Frank Kuhn ,  Ulrich Zehnder

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L24/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor chip, having a multilayer structure (100) containing a radiation-emitting active layer (10), and having a window layer (20), which is transmissive to a radiation emitted by the active layer (10) and is arranged downstream of the multilayer structure (100) in the direction of a main radiating direction of the semiconductor component. The window layer (20) has at least one peripheral side area (21), which, in the course from a first main area (22) facing the multilayer structure (100) in the direction toward a second main area (23) remote from the multilayer structure (100), firstly has a first side area region (24) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area (22). A peripheral side area (11) of the multilayer structure (100) and at least a part of the beveled, curved or stepped first side area region (24) are coated with a continuous electrically insulating layer (30). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.

    摘要翻译： 一种辐射发射半导体芯片，其具有包含发射有机层（10）的多层结构（100），并且具有透过所述有源层（10）发射的辐射的窗口层（20），并且是窗口层 布置在所述多层结构（100）的所述半导体部件的主辐射方向的方向上。 所述窗口层（20）具有至少一个外围侧区域（21），所述至少一个周边区域沿着朝向远离所述多层结构（100）的第二主区域（23）的方向从所述多层结构（100）的第一主区域（22） 多层结构（100）首先具有斜面，弯曲或阶梯状的第一侧面区域（24），使得窗口层相对于第一主区域（22）的尺寸变宽。 所述多层结构（100）的外围侧区域（11）和所述倾斜的，弯曲的或阶梯状的第一侧区域区域（24）的至少一部分被涂覆有连续的电绝缘层（30）。 公开了具有这种类型的芯片的辐射发射部件，并且还公开了一种用于同时产生多个这种芯片的方法。

    Radiation-emitting semiconductor component and method for the production thereof
    6.
    发明授权
    Radiation-emitting semiconductor component and method for the production thereof 有权
    辐射发射半导体元件及其制造方法

    公开(公告)号：US07592636B2

    公开(公告)日：2009-09-22

    申请号：US10529625

    申请日：2003-09-23

    申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

    发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

    IPC分类号： H01L21/00 ,  H01L23/495

    CPC分类号： H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

    摘要翻译： 一种具有辐射透射性衬底（1）的辐射发射半导体部件，其底部布置有辐射产生层（2），其中衬底（1）具有倾斜的侧面区域（3），其中 衬底（1）的折射率大于辐射产生层的折射率，其中折射率差导致未发射的衬底区域（4），其中没有光子直接从辐射产生层 层，并且其中衬底（1）在未发光区域中具有基本上垂直的侧面区域（5）。 该组件的优点是可以从晶片获得更好的面积产率。

    Radiation-emitting semiconductor element
    7.
    发明授权
    Radiation-emitting semiconductor element 有权
    辐射发射半导体元件

    公开(公告)号：US07446341B2

    公开(公告)日：2008-11-04

    申请号：US10669227

    申请日：2003-09-24

    申请人： Stefan Bader ,  Michael Fehrer ,  Wilhelm Stein ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

    发明人： Stefan Bader ,  Michael Fehrer ,  Wilhelm Stein ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

    IPC分类号： H01L27/15

    CPC分类号： H01L33/387 ,  H01L33/405 ,  H01L33/46

    摘要： A radiation-emitting semiconductor component having a semiconductor body (1), which has an active zone (2), in which, for the purpose of electrical contact connection, a patterned contact layer (3) is applied on a surface of the semiconductor body. Interspaces (4) are distributed over the contact layer (3) and are provided for the purpose of forming free areas (5) on the surface which are not covered by the contact layer (3). The free areas (5) are covered with a mirror (6). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.

    摘要翻译： 具有半导体本体（1）的辐射发射半导体部件具有活动区域（2），其中为了电接触连接，将图案化接触层（3）施加在半导体本体的表面上 。 间隙（4）分布在接触层（3）上，并且被提供用于在表面上形成未被接触层（3）覆盖的自由区域（5）。 自由区域（5）用镜子（6）覆盖。 接触连接和反射的两个功能的分离使得可以实现特别高的部件性能。

    Radiation-emitting semiconductor component and method for the production thereof
    8.
    发明申请
    Radiation-emitting semiconductor component and method for the production thereof 有权
    辐射发射半导体元件及其制造方法

    公开(公告)号：US20060124945A1

    公开(公告)日：2006-06-15

    申请号：US10529625

    申请日：2003-09-23

    申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

    发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

    IPC分类号： H01L33/00 ,  H01L21/78

    CPC分类号： H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

    摘要翻译： 一种具有辐射透射性衬底（1）的辐射发射半导体部件，其底部布置有辐射产生层（2），其中衬底（1）具有倾斜的侧面区域（3），其中 衬底（1）的折射率大于辐射产生层的折射率，其中折射率差导致未发射的衬底区域（4），其中没有光子直接从辐射产生层 层，并且其中衬底（1）在未发光区域中具有基本上垂直的侧面区域（5）。 该组件的优点是可以从晶片获得更好的面积产率。