Dual substrate MEMS plate switch and method of manufacture
    41.
    发明申请
    Dual substrate MEMS plate switch and method of manufacture 有权
    双基板MEMS板开关及其制造方法

    公开(公告)号:US20080278268A1

    公开(公告)日:2008-11-13

    申请号:US11797924

    申请日:2007-05-09

    IPC分类号: H01H59/00 H01H49/00

    摘要: Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have at least one shunt bar located at a nodal line of a vibrational mode of the deformable plate, so that the shunt bar remains relatively stationary when the plate is vibrating in that vibrational mode. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.

    摘要翻译: 用于形成静电MEMS板开关的系统和方法包括在第一衬底上形成可变形板,在第二衬底上形成电触点,并使用气密密封来连接两个衬底。 可变形板可以具有位于可变形板的振动模式的节点线处的至少一个分流杆,使得当板在该振动模式下振动时,分流棒保持相对静止。 气密密封可以是金/铟合金,通过加热镀在一层金上的铟层而形成。 可以通过形成穿过第二基板的厚度的通孔来进行对静电MEMS开关的电接入。

    Contact magnetic recording disk file with a magnetoresistive read sensor
    42.
    发明授权
    Contact magnetic recording disk file with a magnetoresistive read sensor 失效
    接触带有磁阻读取传感器的磁记录磁盘文件

    公开(公告)号:US5455730A

    公开(公告)日:1995-10-03

    申请号:US19968

    申请日:1993-02-18

    摘要: A contact magnetic recording rigid disk file utilizes a magnetoresistive (MR) sensor for reading data recorded on the disk. The disk file may be of the liquid-bearing type of contact recording with the MR sensor supported on the trailing end of a carrier which rides on the liquid bearing. The performance of the disk file is enhanced by including means for minimizing the effect of a discovered baseline read signal modulation. The modulation has been determined to be caused by variable cooling of the temperature-sensitive and temperature-elevated MR sensor by the disk, with the temperature variation being directly related to the variation in head-disk spacing caused by the waviness of the surface of the disk. A filter may be incorporated into the read signal processing circuitry of the disk file to eliminate the modulation, the MR sensor may be designed to operate at selected parameters to minimize the effect of the baseline modulation, and the portion of the carrier in contact with the disk surface may be selected to have a length less than the period of the disk waviness so that it more closely follows the disk surface topography.

    摘要翻译: 接触磁记录硬盘文件利用磁阻(MR)传感器来读取记录在盘上的数据。 磁盘文件可以是液体承载型接触记录,其中MR传感器支撑在搭载在液体轴承上的载体的后端上。 通过包括用于最小化发现的基线读信号调制的影响的装置来增强磁盘文件的性能。 已经确定调制是由盘对温度敏感和温度升高的MR传感器的可变冷却造成的,其温度变化与由于表面的波纹引起的头盘间距的变化直接相关 磁盘。 滤波器可以并入盘文件的读信号处理电路中以消除调制,MR传感器可被设计成在所选参数下操作以最小化基线调制的影响,并且载体与 可以选择盘表面具有小于盘波纹的周期的长度,使得其更接近于盘表面形貌。

    Method of making and using a high resolution lithographic mask
    43.
    发明授权
    Method of making and using a high resolution lithographic mask 失效
    制造和使用高分辨率光刻掩模的方法

    公开(公告)号:US5049461A

    公开(公告)日:1991-09-17

    申请号:US367815

    申请日:1989-06-19

    摘要: A high resolution lithographic mask having a desired pattern is generated and used to replicate the pattern onto a film in a one-step process.A film of phase-changeable material in one state is provided on a conductive substrate. By scanning tunneling microscope techniques, the state and thereby the conductivity or other property of the material in selected areas of the film is changed to a second state to provide from the film a mask having a desired pattern defined by crystalline areas. Amorphous material need not be removed from the mask.To replicate the pattern on another film, the latter is placed on another conductive substrate; the mask is positioned with its patterned side within electron tunneling distance of said other film; and the pattern is replicated in a single step by applying a voltage between the mask and other film. The voltage charge on said mask is positive and negative on said other film to cause current to flow in the crystalline areas of said mask and, by electron flow from said film to the mask, eliminate backscattering and insure high resolution.As the state changes (e.g., from crystalline to amorphous) in the pattern areas of said other film, conductivity in the crystalline areas will progressively decrease and, by causing a corresponding reduction in current flow in the crystalline areas, minimize the risk of undesired broadening of exposed areas of said other film.

    Etching/bonding chamber for encapsulated devices and method of use
    45.
    发明授权
    Etching/bonding chamber for encapsulated devices and method of use 有权
    用于封装器件的蚀刻/粘合室和使用方法

    公开(公告)号:US07713786B2

    公开(公告)日:2010-05-11

    申请号:US11826841

    申请日:2007-07-19

    IPC分类号: H01L21/00

    摘要: A method for activating a getter at low temperature for encapsulation in a device cavity containing a microdevice comprises etching a passivation layer off the getter material while the device wafer and lid wafer are enclosed in a bonding chamber. A plasma etching process may be used, wherein by applying a large negative voltage to the lid wafer, a plasma is formed in the low pressure environment within the bonding chamber. The plasma then etches the passivation layer from the getter material, which is directly thereafter sealed within the device cavity of the microdevice, all within the etching/bonding chamber.

    摘要翻译: 用于在低温下激活吸气剂以封装在包含微型装置的装置腔中的方法包括在将装置晶片和盖晶片封装在粘合室中时将钝化层从吸气剂材料上蚀刻。 可以使用等离子体蚀刻工艺,其中通过向盖晶片施加大的负电压,在接合室内的低压环境中形成等离子体。 等离子体然后从吸气剂材料中蚀刻钝化层,吸附剂材料直接在密封在微器件的器件腔内,全部在蚀刻/粘合室内。

    Munroe effect breaching device
    50.
    发明授权
    Munroe effect breaching device 失效
    门罗效应破坏装置

    公开(公告)号:US4418622A

    公开(公告)日:1983-12-06

    申请号:US394975

    申请日:1982-07-02

    IPC分类号: F42B1/02

    CPC分类号: F42B1/02

    摘要: An unlined Munroe Effect device for breaching structures in urban terrain.he device is constructed as an unlined, linear, shaped explosive charge which directs an explosive jet into the structure. The shaped charge is formed with a honeycombed substrate of metal in which the substrate interstices are filled with and the substrate is covered by an explosive material. The substrate is embedded in the explosive material. The explosive material and substrate, prior to curing of the explosive material, are formed into an unlined, semi-cylindrical shape to create the explosive jet or Munroe Effect. The device is initiated or detonated with a booster charge.

    摘要翻译: 用于破坏城市地形结构的无衬线Munroe效应装置。 该装置被构造成一个无衬里的,直线形的炸药,将爆炸射流引导到结构中。 成形电荷由金属的蜂窝衬底形成,其中衬底间隙被填充并且衬底被爆炸性材料覆盖。 基材嵌入炸药中。 炸药材料和基材在固化爆炸材料之前,被形成一个无衬里的半圆柱形形状,以产生爆炸射流或“门罗效应”。 该装置由增压装置启动或引爆。