公开(公告)号：US20100289029A1

公开(公告)日：2010-11-18

申请号：US12767041

申请日：2010-04-26

申请人： Mikiya ICHIMURA ,  Makoto Miyoshi ,  Mitsuhiro Tanaka

发明人： Mikiya ICHIMURA ,  Makoto Miyoshi ,  Mitsuhiro Tanaka

IPC分类号： H01L29/20 ,  H01L21/784 ,  H01L27/12

CPC分类号： C30B25/02 ,  C30B19/00 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786

摘要： An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with AlN. A barrier layer is formed on the spacer layer with group III nitride having a composition of InXAlyGazN (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, AlN, and GaN as vertexes.

摘要翻译： 在本发明中提供了具有优选的二维电子气特性和接触特性的外延基板。 在GaN衬底上形成沟道层。 在AlN的沟道层上形成间隔层。 在间隔层上形成阻挡层，其中III族氮化物具有InXAlyGazN（其中x + y + z = 1）的组成，并且至少包括In，Al和Ga，使得阻挡层的组成在 用根据三元相图上的组成定义的四条线以InN，AlN和GaN为顶点包围。

公开(公告)号：US20100072493A1

公开(公告)日：2010-03-25

申请号：US12442870

申请日：2007-09-25

申请人： Tadayoshi Miyamoto ,  Mitsuhiro Tanaka

发明人： Tadayoshi Miyamoto ,  Mitsuhiro Tanaka

IPC分类号： H01L33/00 ,  H01L21/8232

CPC分类号： H01L27/124 ,  G02F1/136204

摘要： In an active matrix substrate (100) of the present invention, a gate bus line (105) and a gate electrode (166) extend in the first direction (the x direction). At a contact portion (168) for electrically connecting the gate bus line (105) with the drain regions of a first-conductivity-type transistor section (162) and a second-conductivity-type transistor section (164), the direction of the straight line (L1) of the shortest distance (d1) between one of a plurality of first-conductivity-type drain connecting portions (168c) that is closest to the gate bus line (105) and the gate bus line (105) is inclined with respect to the second direction (the y direction).

摘要翻译： 在本发明的有源矩阵基板（100）中，栅极总线（105）和栅电极（166）沿第一方向（x方向）延伸。 在用于将栅极总线（105）与第一导电型晶体管部分（162）和第二导电型晶体管部分（164）的漏极区域电连接的接触部分（168）处， 与栅极总线（105）最接近的多个第一导电型漏极连接部（168c）中的一个与栅极总线（105）之间的最短距离（d1）的直线（L1）倾斜 相对于第二方向（y方向）。

公开(公告)号：US20090050938A1

公开(公告)日：2009-02-26

申请号：US12185152

申请日：2008-08-04

申请人： Makoto Miyoshi ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Mitsuhiro Tanaka

IPC分类号： H01L29/778 ,  H01L21/336

CPC分类号： H01L29/7787 ,  H01L29/1033 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4232 ,  H01L29/517 ,  H01L29/66462

摘要： A normally-off operation type HEMT device excellent in characteristics can be realized. A two-dimensional electron gas region is formed in a periphery of a hetero-junction interface of a base layer and a barrier layer, so that access resistance in an access portion, that is, between a drain and a gate and between a gate and a source is sufficiently lowered, and at the same time, a P-type region is formed immediately under the gate. This realizes a normally-off type HEMT device having a low on-resistance. Further, when a film thickness of an insulating layer is defined as t (nm) and a relative permittivity of a substance forming the insulating layer is defined as k, a threshold voltage as high as +3 V or more can be attained by satisfying k/t≦0.85 (nm−1).

摘要翻译： 能够实现特性优异的常闭型HEMT装置。 二维电子气体区域形成在基底层和势垒层的异质结界面的周围，使得入射部分，即在漏极和栅极之间以及栅极和 源极充分降低，同时在栅极的正下方形成P型区域。 这实现了具有低导通电阻的常闭型HEMT装置。 此外，当将绝缘层的膜厚定义为t（nm），并且形成绝缘层的物质的相对介电常数定义为k时，可以通过满足k值来获得高达+3V或更高的阈值电压 /t<=0.85（nm-1）。

公开(公告)号：US07438761B2

公开(公告)日：2008-10-21

申请号：US11324940

申请日：2006-01-04

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Mitsuhiro Tanaka

IPC分类号： C30B25/02 ,  C30B25/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1008

摘要： A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

摘要翻译： 将氯化氢气体和氨气与载气一起引入反应器中，在反应器中通过导管将基底和至少一种铝金属材料。 然后，通过加热器加热氢气和氨气，因此，使用氢化物​​气相外延法在基板上外延生长至少包含Al元素的III-V族氮化物膜。 整个反应器由氮化铝材料制成，其不会遭受铝金属材料与氯化氢气体的反应产生的氯化铝气体的腐蚀。

公开(公告)号：US07317501B2

公开(公告)日：2008-01-08

申请号：US09841666

申请日：2001-04-24

申请人： Mitsuhiro Tanaka ,  Yuji Saai

发明人： Mitsuhiro Tanaka ,  Yuji Saai

IPC分类号： G02F1/133 ,  B32B3/00 ,  B31F1/20

CPC分类号： G02B5/08 ,  G02F1/133553 ,  Y10T428/24612

摘要： An object of the invention is to provide a light reflective film which can prevent moire fringes from occurring. A rough face in which a plurality of rows of pyramidal convex portions that are linearly continuous are adjacently formed in parallel with one another is formed on one face of a die film. The rows of convex portions that are linearly continuous are inclined at a predetermined angle with respect to an edge of the die film. An optical film is produced by transferring the die film. A light reflective film is produced by vapor-depositing a light reflection film on the optical film. In a liquid crystal display panel having the light reflective film, the pitch of occurring moire fringes becomes so small that the moire fringes cannot be visually seen, and moire fringes can be prevented from occurring.

摘要翻译： 本发明的目的是提供一种能够防止发生莫尔条纹的光反射膜。 在模膜的一个面上形成有多个直线连续的多列锥形凸部相互平行地形成的粗糙面。 线状连续的各列的凸部相对于模膜的边缘以规定的角度倾斜。 通过转移模片来制造光学膜。 通过在光学膜上气相沉积光反射膜来制造光反射膜。 在具有光反射膜的液晶显示面板中，出现的莫尔条纹的间距变得如此之小，使得无法在视觉上看到莫尔条纹，并且可以防止产生莫尔条纹。

公开(公告)号：US06943366B2

公开(公告)日：2005-09-13

申请号：US10813565

申请日：2004-03-30

申请人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

发明人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

IPC分类号： C23C14/06 ,  C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L29/06 ,  H01L31/109 ,  H01L31/336 ,  H01L31/72

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.

摘要翻译： 包含至少Al的III族氮化物底层，其位错密度为<= 1×10 11 / cm 2，和（002）面X射线摇摆曲线半宽 在集合的基材上形成<= 200秒的值。 在III族氮化物底层上方形成p型半导体层组，并且包括III族氮化物，其中Ga含量相对于总III族元素> 50％，载流子密度> 1×10 ^{16/3/3 3。 在p型半导体层组上形成发光层，并且包含多个相互隔离的岛状晶体。 在发光层上形成n型半导体层组，并且包含相对于> = 50％的总III族元素的Ga含量。}

公开(公告)号：US20050009221A1

公开(公告)日：2005-01-13

申请号：US10873767

申请日：2004-06-22

申请人： Makoto Miyoshi ,  Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa ,  Hiroyasu Ishikawa

发明人： Makoto Miyoshi ,  Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa ,  Hiroyasu Ishikawa

IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B25/02 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

摘要： A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.

摘要翻译： 制造包括高电阻率GaN层的氮化物膜的方法包括以下步骤：允许含有有机金属化合物的III族源气体，含有氨的V族气体，用于III族源气体的载气 ，并且用于V族源气体的载气在保持在1000℃或更高的预定单晶晶片上流动，并且还包括在单晶晶片上外延生长包括GaN层的氮化物膜的步骤 源气体的气相反应。 在反应进行之前，至少一种载气含有氮，同时晶片温度升高。 至少一种载气含有氢和氮，并且在外延生长步骤的至少一部分中，总氢和氮的总含量为90体积％以上。

公开(公告)号：US06815867B2

公开(公告)日：2004-11-09

申请号：US09997997

申请日：2001-11-30

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L4108

CPC分类号： H03H9/02543 ,  Y10T29/42

摘要： A base material made of C-faced sapphire single crystal is set on a susceptor installed in a reactor arranged horizontally. Then, a trimethyl-aluminum and an ammonia are introduced as raw material gases into the reactor and supplied onto the substrate, to form an AlN film. In this case, the temperature of the base material is set to 1100° C. or over, and the ratio (V raw material gas/III raw material gas) is set to 800 or below, and the forming pressure is set within a range of 7-17 Torr. As a result, the crystallinity of the AlN film is developed to 90 arcsec or below in FWHM of X-ray rocking curve, and the surface flatness of the AlN film is developed to 20 Å or below. Therefore, a substrate composed of the base material and the AlN film is preferably usable for an acoustic surface wave device, and if the substrate is employed, the deviation from the theoretical propagation velocity is set to 1.5 m/sec or below.

摘要翻译： 将由C面蓝宝石单晶构成的基材设置在安装在水平排列的反应器中的基座上。 然后，将三甲基铝和氨作为原料气体引入反应器中并供给到基板上，形成AlN膜。 在这种情况下，将基材的温度设定为1100℃以上，将原料气体/ III原料气体的比率设定为800以下，将成形压力设定在 7-17 Torr。 结果，在X射线摇摆曲线的FWHM中，AlN膜的结晶度显现为90弧秒以下，AlN膜的表面平坦度显现为20以下。 因此，由基材和AlN膜构成的基板优选用于声表面波器件，如果使用基板，则与理论传播速度的偏差设定为1.5m / sec以下。

公开(公告)号：US06781164B2

公开(公告)日：2004-08-24

申请号：US10690290

申请日：2003-10-21

申请人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

发明人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

IPC分类号： H01L31072

CPC分类号： H01L29/66318 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/66856

摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

摘要翻译： 将作为底层的AlN膜外延生长在具有10 11 / cm 2以下的位错密度和90秒以下的结晶度的X射线的半峰全宽（FWHM）的基板上 （002）反射的摇摆曲线。 然后，在AlN膜上，将n-GaN膜外延生长为位错密度为10 10 / cm 2以下的导电层，在半高宽度下为150秒以下的结晶度（FWHM ）（002）反射的X射线摇摆曲线，以制造半导体元件。

公开(公告)号：US06770914B2

公开(公告)日：2004-08-03

申请号：US10163256

申请日：2002-06-05

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

IPC分类号： H01L2922

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A III nitride semiconductor substrate for ELO is provided for forming a III nitride film whose surface is controlled independent of the film's thickness. A III nitride underlayer including at least Al is directly formed on a base made of e.g. a sapphire single crystal, and not formed through a buffer layer formed at a low temperature. After that patterns made of e.g SiO2 are formed on the underlayer.

摘要翻译： 提供了用于ELO的III族氮化物半导体衬底，用于形成其表面被独立于膜的厚度来控制的III族氮化物膜。 至少包含Al的III族氮化物底层直接形成在由例如玻璃基材制成的基材上。 蓝宝石单晶，并且不通过在低温下形成的缓冲层形成。 之后，在底层上形成由例如SiO 2制成的图案。