中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

102 records (took 0.041 seconds)

    Method and system for determining one or more optical characteristics of structure of a semiconductor wafer
    41.
    发明授权
    Method and system for determining one or more optical characteristics of structure of a semiconductor wafer 有权
    用于确定半导体晶片的结构的一个或多个光学特性的方法和系统

    公开(公告)号：US08675188B2

    公开(公告)日：2014-03-18

    申请号：US13734506

    申请日：2013-01-04

    Applicant: KLA-Tencor Corporation

    Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden

    IPC: G01N21/00 ,  G01J4/00

    CPC classification number: G01N21/9501 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/213 ,  G01N2021/95615 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

    Abstract translation: 半导体晶片的结构的一个或多个光学特性的确定包括测量来自样品的一个或多个结构的一个或多个光学信号，基于所述样品的一个或多个结构确定与具有所选择的一组标称特征的参考结构相关联的背景光学场 一个或多个结构，确定适合于至少部分校正背景场的校正光场，其中所测量的一个或多个光信号与与校正光场和背景光场之和相关联的信号之间的差异在以下 选择的公差等级，以及利用所述校正光场提取与所述一个或多个结构相关联的一个或多个特征。

    Electron source
    44.
    发明授权
    Electron source 有权

    公开(公告)号：US10558123B2

    公开(公告)日：2020-02-11

    申请号：US16161010

    申请日：2018-10-15

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

    IPC: H01J37/073 ,  G03F7/20 ,  H01J1/34 ,  H01J1/304 ,  H01J35/06

    Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

    183 nm CW laser and inspection system
    47.
    发明授权
    183 nm CW laser and inspection system 有权

    公开(公告)号：US10429719B2

    公开(公告)日：2019-10-01

    申请号：US16205032

    申请日：2018-11-29

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  Baigang Zhang ,  John Fielden ,  Vladimir Dribinski

    IPC: G02F1/35 ,  G02F1/355

    Abstract: An inspection system/method in which first optics direct continuous wave (CW) light at 181-185 nm to an inspected article, and second optics redirect image information affected by the article to detectors. A laser assembly generates the CW light by generating fourth harmonic light from first fundamental CW light having a first wavelength between 1 and 1.1 μm, generating fifth harmonic light by mixing the fourth harmonic light with the first fundamental CW light, and mixing the fifth harmonic light with second light having a second wavelength between 1.26 and 1.82 μm. An external cavity mixes the first light and the fourth harmonic light using a first nonlinear crystal. The CW light is generated using a second cavity that passes circulated second fundamental or signal CW light through a second nonlinear crystal, and directing the fifth harmonic light through the second nonlinear crystal.

    Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors
    48.
    发明授权
    Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors 有权

    公开(公告)号：US10197501B2

    公开(公告)日：2019-02-05

    申请号：US13710315

    申请日：2012-12-10

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  Xuefeng Liu ,  John Fielden ,  David L. Brown

    IPC: G01N21/88 ,  H01L27/148 ,  G01N21/95 ,  H01J31/26 ,  G01N21/956

    Abstract: A focusing EBCCD includes a control device positioned between a photocathode and a CCD. The control device has a plurality of holes therein, wherein the plurality of holes are formed perpendicular to a surface of the photocathode, and wherein a pattern of the plurality of holes is aligned with a pattern of pixels in the CCD. Each hole is surrounded by at least one first electrode, which is formed on a surface of the control device facing the photocathode. The control device may include a plurality of ridges between the holes. The control device may be separated from the photocathode by approximately half a shorter dimension of a CCD pixel or less. A plurality of first electrodes may be provided, wherein each first electrode surrounds a given hole and is separated from the given hole by a gap.

    Sensor with electrically controllable aperture for inspection and metrology systems
    50.
    发明授权
    Sensor with electrically controllable aperture for inspection and metrology systems 有权

    公开(公告)号：US09860466B2

    公开(公告)日：2018-01-02

    申请号：US15153543

    申请日：2016-05-12

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  David L. Brown ,  Jingjing Zhang ,  Keith Lyon ,  Mark Shi Wang

    IPC: G01N21/00 ,  H04N5/3722 ,  G01N21/956

    CPC classification number: H04N5/3722 ,  G01N21/956 ,  G01N2201/12

    Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

Patent Agency Ranking