公开(公告)号：US20050233583A1

公开(公告)日：2005-10-20

申请号：US11072294

申请日：2005-03-07

申请人： Hideshi Miyajima

发明人： Hideshi Miyajima

IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/312 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76835 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76834

摘要： Disclosed is a method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film having a porous structure above a semiconductor substrate, forming a recess in the low dielectric constant insulating film, providing a burying insulating film above the low dielectric constant insulating film having the recess and in the recess, removing a the burying insulating film provided in the recess, thereby opening the recess, and burying conductive material in the recess, forming a conductive portion.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其特征在于，在半导体基板的上方形成具有多孔结构的低介电常数绝缘膜，在所述低介电常数绝缘膜上形成凹部，在所述低介电常数绝缘膜的上方形成掩埋绝缘膜 具有凹部并且在凹部中，去除设置在凹部中的埋入绝缘膜，从而打开凹部，并将导电材料埋入凹部中，形成导电部分。

公开(公告)号：US20050112877A1

公开(公告)日：2005-05-26

申请号：US10972389

申请日：2004-10-26

申请人： Hideshi Miyajima

发明人： Hideshi Miyajima

IPC分类号： H01L21/768 ,  H01L21/00 ,  H01L21/02 ,  H01L21/312 ,  H01L21/314 ,  H01L21/318 ,  H01L21/44 ,  H01L21/4763 ,  H01L23/522

CPC分类号： H01L21/67207 ,  H01L21/02074 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76834 ,  H01L21/76883

摘要： Disclosed is a method of manufacturing a semiconductor device comprising preparing a workpiece, which has a first insulating film containing carbon and hydrogen, and a copper wiring, and reducing an oxide formed on a surface of the copper wiring by using plasma with the workpiece cooled.

摘要翻译： 公开了一种制造半导体器件的方法，包括制备具有包含碳和氢的第一绝缘膜和铜布线的工件，并且通过使用待冷却的工件的等离子体还原在铜布线的表面上形成的氧化物。

公开(公告)号：US6164295A

公开(公告)日：2000-12-26

申请号：US848264

申请日：1997-04-29

申请人： Akio Ui ,  Naruhiko Kaji ,  Hideshi Miyajima ,  Nobuo Hayasaka

发明人： Akio Ui ,  Naruhiko Kaji ,  Hideshi Miyajima ,  Nobuo Hayasaka

IPC分类号： B08B7/00 ,  C23C16/44 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01L21/02049

摘要： There is provided a CVD apparatus and a cleaning method which can precisely perform cleaning at a high speed, in order to increase the throughput of a CVD apparatus. A film formation gas (e.g., SiH.sub.4 and O.sub.2 gases) is introduced from a source gas supply pipe into a chamber to form a silicon oxide film (SiO.sub.2) on a wafer placed on a susceptor by using a plasma or the like. A thin film (SiO.sub.2) mainly consisting of silicon and oxygen, an imperfect oxide film of silicon, or the like also attaches to a wall surface and the respective surfaces of a window plate, a vacuum seal portion, the susceptor, an electrode, an insulator, an exhaust pipe, and the like in the chamber. An HF-based gas supply system for a cleaning etching gas is arranged to clean the interior of the chamber of the CVD apparatus. Particularly, a film formed with a source gas of Si.sub.x H.sub.2x+2 (x=1, 2, 3) and O.sub.2 is more perfect than an imperfect oxide film (e.g., TEOS) formed with an organic silicon source gas, so that bonding is strong, and the etching rate decreases in plasma cleaning and the like. Cleaning with the HF gas according to this invention is very effective.

摘要翻译： 提供了能够高精度地进行清洗的CVD装置和清洗方法，以提高CVD装置的生产量。 将成膜气体（例如SiH 4和O 2气体）从源气体供给管引入室中，通过使用等离子体等在放置在基座上的晶片上形成氧化硅膜（SiO 2）。 主要由硅和氧组成的薄膜（SiO 2），硅的不完全氧化膜等也附着在壁面，窗板，真空密封部分，基座，电极， 绝缘体，排气管等。 布置用于清洁蚀刻气体的基于HF的气体供应系统以清洁CVD设备的室的内部。 特别地，形成有SixH2x + 2（x = 1,2,3）和O2的源气体的膜比用有机硅源气体形成的不完全氧化膜（例如TEOS）更完美，使得结合强 ，并且等离子体清洗等中的蚀刻速率降低。 使用根据本发明的HF气体的清洁是非常有效的。

公开(公告)号：US5561082A

公开(公告)日：1996-10-01

申请号：US405948

申请日：1995-03-17

申请人： Mie Matsuo ,  Haruo Okano ,  Nobuo Hayasaka ,  Kyoichi Suguro ,  Hideshi Miyajima ,  Jun-ichi Wada

发明人： Mie Matsuo ,  Haruo Okano ,  Nobuo Hayasaka ,  Kyoichi Suguro ,  Hideshi Miyajima ,  Jun-ichi Wada

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/28

CPC分类号： H01L21/76877 ,  H01L21/28518 ,  H01L21/76823 ,  H01L21/76838 ,  H01L21/76849 ,  H01L23/5283 ,  H01L23/53238 ,  H01L2924/0002

摘要： The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of hydrogen oxide or of carbon oxide, on an insulating film formed on a semiconductor substrate, forming a metal oxide film pattern by subjecting a treatment to the metal oxide film, and converting said metal oxide pattern into at least one of an electrode and a wiring made of a metal which is a main component constituting the metal oxide, by reducing the metal oxide film pattern at a temperature of 80.degree. to 500.degree. C.

摘要翻译： 本发明提供了一种制造半导体器件的方法，包括以下步骤：形成由金属氧化物制成的金属氧化物膜，其标准自由能的降低小于氧化物或氧化碳的标准自由能的降低，对 形成在半导体基板上的绝缘膜，通过对金属氧化物膜进行处理形成金属氧化物膜图案，并将所述金属氧化物图案转换成电极和由作为主要成分的金属制成的布线中的至少一个 通过在80℃〜500℃的温度下还原金属氧化物膜图案来构成金属氧化物。

公开(公告)号：US20140054754A1

公开(公告)日：2014-02-27

申请号：US13590341

申请日：2012-08-21

申请人： Tadayoshi Watanabe ,  Hideaki Masuda ,  Hideshi Miyajima

发明人： Tadayoshi Watanabe ,  Hideaki Masuda ,  Hideshi Miyajima

IPC分类号： H01L21/768 ,  H01L29/02

CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144

摘要： Systems and methods are presented for filling an opening with material of a high integrity. A material having properties in a first physical state suitable for formation of a hard mask layer and in a second physical state having properties facilitating removal of the former hard mask layer is utilized. Utilizing the material as a mask layer and subsequently removing the material enables a number of mask layers to be minimized in a subsequent filling operation (e.g., metallization). Material amenable to being in a first physical state and a second physical state is an optically reactive material. The optically reactive dielectric can comprise an element or compound which can act as an agent/catalyst in the optical conversion process along with any element or compound which can act as an accelerator for the optical reaction. Conversion can be brought about by exposure to electromagnetic radiation and/or application of thermal energy.

摘要翻译： 提出了用高填充材料填充开口的系统和方法。 使用具有适于形成硬掩模层的第一物理状态的属性并且具有便于去除前者的硬掩模层的性质的第二物理状态的材料。 利用该材料作为掩模层并随后除去该材料使得能够在随后的填充操作（例如，金属化）中使多个掩模层最小化。 适于处于第一物理状态和第二物理状态的材料是光反应性材料。 光反应电介质可以包括可以在光学转换过程中作为试剂/催化剂的元素或化合物以及可用作光学反应的促进剂的任何元素或化合物。 可以通过暴露于电磁辐射和/或施加热能来实现转换。

公开(公告)号：US20120139033A1

公开(公告)日：2012-06-07

申请号：US12961762

申请日：2010-12-07

申请人： Hiroyuki Yamasaki ,  Hideshi Miyajima ,  Yoshihiro Uozumi

发明人： Hiroyuki Yamasaki ,  Hideshi Miyajima ,  Yoshihiro Uozumi

IPC分类号： H01L29/78 ,  H01L21/76

CPC分类号： H01L27/1104 ,  H01L21/76224

摘要： Semiconductors devices and methods of making semiconductor devices are provided. According to one embodiment, a semiconductor device can include a p-type field effect transistor area having an active region with an epitaxial layer grown thereupon and an isolation feature adjacent to the active region. A height of the isolation feature equals or exceeds a height of an interface between the epitaxial layer and the active region. More particularly, a height of the isolation feature in the corner of a junction between the isolation feature and the action region equals or exceeds the height to the interface between the epitaxial layer and the active region.

摘要翻译： 提供了制造半导体器件的半导体器件和方法。 根据一个实施例，半导体器件可以包括具有生长在其上的外延层的有源区和邻近有源区的隔离特征的p型场效应晶体管区。 隔离特征的高度等于或超过外延层和有源区之间的界面的高度。 更具体地，隔离特征和作用区域之间的接合部的拐角处的隔离特征的高度等于或超过了外延层和有源区域之间的界面的高度。

公开(公告)号：US07842518B2

公开(公告)日：2010-11-30

申请号：US11933785

申请日：2007-11-01

申请人： Hideshi Miyajima

发明人： Hideshi Miyajima

IPC分类号： H01L21/00

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, includes forming a porous dielectric film above a substrate using a porous insulating material, forming an opening in the porous dielectric film, repairing film quality of the porous dielectric film on a surface of the opening by feeding a predetermined gas replacing a Si—OH group to the opening, and performing pore sealing of the surface of the opening using the same predetermined gas as that used for film quality repairs after repairing the film quality.

摘要翻译： 一种制造半导体器件的方法，包括使用多孔绝缘材料在基片上形成多孔电介质膜，在多孔电介质膜中形成开口，通过馈送预定的方式修复开口表面上的多孔绝缘膜的膜质量 将Si-OH基团替换为开口，并且在修复膜质量之后使用与用于膜质量修复的预定气体相同的预定气体来进行开口的表面的孔密封。

公开(公告)号：US20090275194A1

公开(公告)日：2009-11-05

申请号：US12501901

申请日：2009-07-13

申请人： Yoshiaki Shimooka ,  Hideki Shibata ,  Hideshi Miyajima ,  Kazuhiro Tomioka

发明人： Yoshiaki Shimooka ,  Hideki Shibata ,  Hideshi Miyajima ,  Kazuhiro Tomioka

IPC分类号： H01L21/768

CPC分类号： H01L21/76885 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating film, fills metallic films in the grooves to form wirings, etches the first interlayer-insulating film with the wirings as a mask and removes the interlayer-insulating film between the wirings to provide grooves to be filled, and fills a second interlayer-insulating film made of a material of low dielectric constant in the grooves to be filled.

公开(公告)号：US20080194117A1

公开(公告)日：2008-08-14

申请号：US12020353

申请日：2008-01-25

申请人： Hideaki Masuda ,  Hideshi Miyajima ,  Tsutomu Shimayama

发明人： Hideaki Masuda ,  Hideshi Miyajima ,  Tsutomu Shimayama

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3122

摘要： A manufacturing method of a semiconductor device, includes forming a porous organo-siloxane film containing a porogen component having carbon as a main component above a semiconductor substrate, forming an upper-side insulating film having at least one of film density and film composition different from that of the porous organo-siloxane film on the porous organo-siloxane film, and applying at least one of an electron beam and an ultraviolet ray to the porous organo-siloxane film and upper-side insulating film to cause polymerization reaction of the porogen component in the porous organo-siloxane film.

摘要翻译： 一种半导体器件的制造方法，包括在半导体衬底上形成含有以碳为主要成分的致孔剂成分的多孔有机硅氧烷膜，形成具有不同于膜密度和膜组成的膜密度和膜组成中的至少一种的上侧绝缘膜 多孔有机硅氧烷膜上的多孔有机硅氧烷膜的多孔有机硅氧烷膜，并向多孔有机硅氧烷膜和上侧绝缘膜施加电子束和紫外线中的至少一种，引起致孔剂成分的聚合反应 在多孔有机硅氧烷膜中。

公开(公告)号：US6051508A

公开(公告)日：2000-04-18

申请号：US145464

申请日：1998-09-02

申请人： Tamao Takase ,  Tadashi Matsuno ,  Hideshi Miyajima

发明人： Tamao Takase ,  Tadashi Matsuno ,  Hideshi Miyajima

IPC分类号： H01L21/768 ,  H01L29/34

CPC分类号： H01L21/7681 ,  H01L21/76802 ,  Y10S438/954

摘要： The present invention intends to form multilayer interconnects without deteriorating the advantage of an organosiloxane film (an interlayer dielectric), i.e., the low dielectric constant. According to the present invention, an organosiloxane film, a silicon nitride film, an inorganic SOG film, and a photoresist pattern are formed on a first metal layer, in series. The inorganic SOG film is then etched with use of the photoresist pattern as a mask to transfer the photoresist pattern to the inorganic SOG film. The photoresist pattern is then removed by oxygen plasma treatment with use of the silicon nitride film as a protection mask for protecting the organosiloxane film. Subsequently thereto, the silicon nitride film and the organosiloxane film are etched with use of the inorganic SOG film to form a contact hole reaching the first metal layer. After removing the inorganic SOG film, a second metal layer is formed to contact with the first metal layer through the contact hole.

摘要翻译： 本发明意图形成多层互连，而不会劣化有机硅氧烷膜（层间电介质）的优点，即低介电常数。 根据本发明，在第一金属层上串联形成有机硅氧烷膜，氮化硅膜，无机SOG膜和光刻胶图案。 然后使用光致抗蚀剂图案作为掩模蚀刻无机SOG膜，以将光致抗蚀剂图案转印到无机SOG膜上。 然后通过使用氮化硅膜作为保护有机硅氧烷膜的保护罩的氧等离子体处理去除光致抗蚀剂图案。 随后，使用无机SOG膜蚀刻氮化硅膜和有机硅氧烷膜，形成到达第一金属层的接触孔。 在去除无机SOG膜之后，形成第二金属层，以通过接触孔与第一金属层接触。