公开(公告)号：US07268084B2

公开(公告)日：2007-09-11

申请号：US10954086

申请日：2004-09-30

申请人： Lee Chen ,  Hitomitsu Kambara ,  Caiz Hong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

发明人： Lee Chen ,  Hitomitsu Kambara ,  Caiz Hong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC分类号： H01L21/302

CPC分类号： H01J37/32706 ,  H01J37/32211 ,  H01J37/3244 ,  H01L21/31116

摘要： A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.

摘要翻译： 处理衬底的方法包括将衬底设置在具有被配置为限定等离子体空间的第一室部分的处理室中，以及构造成限定处理空间的第二室部分，将第一气体引入等离子体空间并引入第二气体 到过程空间。 在等离子体空间中，使用与上室部分相连的等离子体源，在等离子体空间中形成等离子体，通过提供位于第一室部分和第二部分之间的格栅，在处理空间中形成用于处理基板的工艺化学品 室部分，使得等离子体可以从等离子体空间扩散到处理空间。

公开(公告)号：US20070000612A1

公开(公告)日：2007-01-04

申请号：US10569378

申请日：2004-08-26

申请人： Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01L21/67167 ,  H01L21/67173 ,  H01L21/67742 ,  Y10S414/139

摘要： A substrate processing apparatus includes a plurality of process chambers (20) for applying a process to substrate accommodated therein and a conveyance case (24) that conveys the accommodated substrates to the process chambers (20) and a transfer mechanism that moves the conveyance case (24) along a moving path. The conveyance case accommodates the substrates in an isolated state from an external atmosphere. The plurality of process chambers (20) are arranged in an aligned state on both sides of a moving path of the conveyance case (24). The conveyance case (24) has two conveyance ports (24a) in response to conveyance ports (20a) of the process chambers (20) arranged in alignment in two rows.

摘要翻译： 一种基板处理装置，包括：多个处理室，用于对容纳在其中的基板进行处理;以及传送箱，其将所容纳的基板输送到处理室;以及传送机构， 24）沿着移动路径。 输送箱容纳基板处于与外部气氛隔离的状态。 多个处理室（20）在输送箱（24）的移动路径的两侧以排列状态布置。 输送箱（24）响应于排列成两列排列的处理室（20）的输送口（20a），具有两个输送口（24a）。

公开(公告)号：US5539179A

公开(公告)日：1996-07-23

申请号：US792592

申请日：1991-11-15

申请人： Toshihisa Nozawa ,  Junichi Arami ,  Shinji Kubota ,  Isahiro Hasegawa ,  Katsuya Okumura

发明人： Toshihisa Nozawa ,  Junichi Arami ,  Shinji Kubota ,  Isahiro Hasegawa ,  Katsuya Okumura

IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  B23K10/00

CPC分类号： H02N13/00 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck for electrostatically holding a wafer is provided in a vacuum chamber formed in a magnetron plasma etching apparatus. The electrostatic chuck has a base member, a first insulating layer provided on the base member and made of polyimide, a second insulation layer made of AlN, a conductive sheet provided between first and second insulation layers, and an adhesive layer made of a thermosetting resin and adhering the first insulating layer to the second insulating layer. The wafer is placed on the second insulating layer, and power is supplied from a high voltage power supply to the conductive sheet via a feeding sheet, thereby creating static electricity and hence a coulombic force for holding the wafer on the second insulating layer.

摘要翻译： 用于静电保持晶片的静电卡盘设置在形成在磁控管等离子体蚀刻装置中的真空室中。 所述静电卡盘具有基材，在所述基材上设置的由聚酰亚胺构成的第一绝缘层，由AlN构成的第二绝缘层，设置在第一绝缘层和第二绝缘层之间的导电片，以及由热固性树脂 并且将第一绝缘层粘合到第二绝缘层。 将晶片放置在第二绝缘层上，并且通过馈电片从高压电源向导电片提供电力，从而产生静电，因此产生用于将晶片保持在第二绝缘层上的库仑力。

公开(公告)号：US5250137A

公开(公告)日：1993-10-05

申请号：US731475

申请日：1991-07-17

申请人： Junichi Arami ,  Toshihisa Nozawa ,  Keiji Horioka ,  Katsuya Okumura

发明人： Junichi Arami ,  Toshihisa Nozawa ,  Keiji Horioka ,  Katsuya Okumura

IPC分类号： C23C14/40 ,  C23C14/50 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  B05C5/00

CPC分类号： H01L21/67069 ,  H01L21/6831

摘要： A plasma treating apparatus includes an electrostatic chuck constructing an electrically conductive layer and insulating layers having the conductive layer sandwiched therebetween. A RF current supplied to a susceptor is prevented from flowing into the conductive layer of the chuck so as to suppress the RF current leakage from a cable connected to the conductive layer of the chuck for high voltage application. The plasma treating apparatus includes a chamber having a first electrode, a second electrode disposed within the chamber, a cylindrical high frequency power supply member inserted from the outside into the chamber such that the tip of the member is connected to the second electrode, high frequency power supply means for supplying a high frequency power through the power supply member to the second electrode so as to generate a plasma in the region between the first and second electrodes within the chamber, an electrostatic chuck arranged on the second electrode and constructed such that a conductive layer is formed within an insulating layer, a cable for applying a high voltage, the cable being inserted into the power supply member and having the tip connected to the conductive layer of the electrostatic chuck, and a power source connected to the cable.

摘要翻译： 等离子体处理装置包括构成导电层的静电卡盘和夹在其间的导电层的绝缘层。 防止提供给基座的RF电流流入卡盘的导电层，以便抑制与电缆连接的电缆的RF电流泄漏，以用于高电压施加。 等离子体处理装置包括具有第一电极，设置在室内的第二电极的室，从外部插入室的圆柱形高频电源构件，使得构件的尖端连接到第二电极，高频 电源装置，用于通过所述电源构件向所述第二电极提供高频电力，以在所述室内的所述第一和第二电极之间的区域中产生等离子体;静电吸盘，其布置在所述第二电极上， 导电层形成在绝缘层内，用于施加高电压的电缆，所述电缆插入到电源构件中，并且尖端连接到静电卡盘的导电层，以及连接到电缆的电源。

公开(公告)号：US5234527A

公开(公告)日：1993-08-10

申请号：US731473

申请日：1991-07-17

申请人： Toshihisa Nozawa ,  Junichi Arami ,  Yukimasa Yoshida ,  Keiji Horioka

发明人： Toshihisa Nozawa ,  Junichi Arami ,  Yukimasa Yoshida ,  Keiji Horioka

IPC分类号： C23C14/54 ,  B01J3/00 ,  C23C16/46 ,  C23F4/00 ,  G01F23/22 ,  G01F23/24 ,  H01L21/302 ,  H01L21/3065

CPC分类号： B01J3/002 ,  G01F23/22 ,  H01J2237/2001

摘要： A liquid level detecting device used in a vacuum processing apparatus, the device comprising a liquid container section, an inlet pipe for liquid supply connected to the liquid container section, and outlet pipe for discharging the liquid when the liquid in the liquid container section overflows a predetermined liquid level, a temperature measurement terminal provided in the liquid container section, for detecting the temperature of the liquid in the container section, means for heating or cooling the temperature measurement terminal, and a liquid level detecting section for detecting the surface level of the liquid on the basis of the difference between two temperatures of the liquid measured when the heating or cooling means is in contact with the liquid and when not in contact.

摘要翻译： 一种用于真空处理装置的液位检测装置，该装置包括液体容器部分，与液体容器部分连接的液体供给入口管，以及当液体容器部分中的液体溢出时排出液体的出口管 预定液位，设置在液体容器部分中的用于检测容器部分中的液体的温度的温度测量端子，用于加热或冷却温度测量端子的装置，以及液位检测部分，用于检测 基于当加热或冷却装置与液体接触时和当不接触时测量的液体的两个温度之间的差异的液体。

公开(公告)号：US09177846B2

公开(公告)日：2015-11-03

申请号：US12526460

申请日：2008-02-04

申请人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

发明人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

IPC分类号： H01L21/3065 ,  C23C16/513 ,  H01L21/683 ,  C23C16/458 ,  H01L21/687

CPC分类号： H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

摘要： Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

摘要翻译： 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。

公开(公告)号：US08973527B2

公开(公告)日：2015-03-10

申请号：US13061356

申请日：2009-08-27

申请人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

发明人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/52 ,  H01J37/32 ,  C23C16/44 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

摘要： A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path.

摘要翻译： 等离子体处理装置设置有从排气孔向下延伸的第一排气路径; 第二排气通道，其沿着排气方向连接到第一排气通路的下游端部，并且沿与第一排气通路延伸的方向垂直的方向延伸，其横截面与排气通道 方向为水平长，使得宽度方向长度大于横截面中的垂直长度; 第三排气路径，其沿排气方向连接到第二排气路径的下游端部，并且沿与第二排气通路延伸的方向垂直的方向延伸; 泵，其在排气方向上连接到第三排气路径的下游端部，并且减压处理容器的内部; 设置在第二排气路径中的压力控制阀，包括能够关闭第二排气通路并控制排气方向上游侧和下游侧的压力的压力控制阀板; 以及截止阀，其设置在所述第三排气路径中并且包括打开和关闭所述第三排气路径的截止阀板。

公开(公告)号：US08967080B2

公开(公告)日：2015-03-03

申请号：US12867343

申请日：2009-02-10

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32238

摘要： A plasma generation chamber of a plasma processing apparatus is closed by a top plate 3. The top plate 3 has recesses 3A on its surface facing the plasma generation chamber and a central recess 3B on an opposite surface. The top plate 3 is coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top plate 3 such that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recesses 3A and the microwave is propagated within the recesses 3A in a single mode. Strong plasma can be generated within each of the recesses 3A, so that a stable plasma mode can be generated in the top plate 3.

摘要翻译： 等离子体处理装置的等离子体生成室由顶板3封闭。顶板3在其表面上具有面向等离子体产生室的凹部3A和相对表面上的中心凹部3B。 顶板3与天线耦合。 如果向天线提供微波，则微波通过天线的狭槽辐射。 微波通过顶板3传播，使得微波具有偏振面，微波整体形成圆偏振波。 这里，微波的共振吸收发生在凹部3A的侧面，微波在单个模式下在凹部3A内传播。 可以在每个凹部3A内产生强等离子体，从而可以在顶板3中产生稳定的等离子体模式。

公开(公告)号：US08815014B2

公开(公告)日：2014-08-26

申请号：US13024328

申请日：2011-02-10

申请人： Jacques Faguet ,  Masahide Iwasaki ,  Toshihisa Nozawa

发明人： Jacques Faguet ,  Masahide Iwasaki ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32623 ,  H05H2245/123

摘要： A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.

摘要翻译： 描述了在衬底上等离子体辅助薄膜气相沉积的方法和系统。 该系统包括处理室，该处理室包括具有第一体积的第一处理空间，耦合到处理室的衬底台，并被配置为支撑衬底并将衬底暴露于第一处理空间;耦合到处理室的等离子体产生系统，以及 被配置为在所述第一处理空间的至少一部分中产生等离子体，以及耦合到所述处理室并被配置为抽空所述第一处理空间的至少一部分的真空泵送系统。 所述系统还包括处理容积调节机构，其耦合到所述处理室并且被配置为创建包括所述第一处理空间的至少一部分并且具有小于所述第一体积的第二容积的第二处理空间，所述衬底暴露于 第二个处理空间。

公开(公告)号：US20130130513A1

公开(公告)日：2013-05-23

申请号：US13811012

申请日：2011-07-20

申请人： Kotaro Miyatani ,  Takenao Nemoto ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Toshihisa Nozawa

发明人： Kotaro Miyatani ,  Takenao Nemoto ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Toshihisa Nozawa

IPC分类号： H01L21/02

CPC分类号： H01L21/02274 ,  C23C16/342 ,  C23C16/511 ,  H01L21/02112 ,  H01L21/76801

摘要： The interlayer insulating layer forming method for forming an interlayer insulating layer of a semiconductor device via a plasma CVD method includes: carrying a substrate into a depressurized processing container; supplying a plasma generating gas to a first space spaced apart from the substrate; exciting the plasma generating gas in the first space; and supplying a raw material gas including a boron compound that includes at least a hydrogen group or hydrocarbon group, to a second space between the first space and the substrate. Also, a semiconductor device is interconnected in a multilayer through an interlayer insulating layer having an amorphous structure including boron, carbon, and nitrogen, wherein, in the interlayer insulating layer, a hydrocarbon group or an alkyl amino group is mixed in the amorphous structure comprising hexagonal boron nitride and cubic boron nitride.

摘要翻译： 用于通过等离子体CVD法形成半导体器件的层间绝缘层的层间绝缘层形成方法包括：将衬底运送到减压处理容器中; 向与衬底隔开的第一空间供应等离子体产生气体; 激发第一空间中的等离子体产生气体; 以及将包含至少包含氢基团或烃基的硼化合物的原料气体供给到所述第一空间和所述基板之间的第二空间。 此外，半导体器件通过具有包括硼，碳和氮的非晶结构的层间绝缘层在多层中互连，其中在层间绝缘层中，烃基或烷基氨基混合在非晶结构中，包括 六方氮化硼和立方氮化硼。