公开(公告)号：US5068051A

公开(公告)日：1991-11-26

申请号：US454265

申请日：1989-12-21

申请人： Hideaki Kikuchi ,  Motosuke Ogawa ,  Akira Niiyama

发明人： Hideaki Kikuchi ,  Motosuke Ogawa ,  Akira Niiyama

IPC分类号： C11D7/50

CPC分类号： C11D7/5086

摘要： A mixed cleaning solvent containing dichlorotrifluoroethane and dimethoxymethane without containing Flon #113, which is suitable for cleaning and degreasing printed circuit boards and for eliminating flux residues and dust particles adhering thereon and which reveals high cleaning ability without occurrence of whity specks of volatilization residues including ionic residues on the treated surface with possible attainment of high stability to decomposition of the solvent component.

摘要翻译： 含有二氯三氟乙烷和二甲氧基甲烷的混合清洗溶剂，不含Flon＃113，适用于印刷电路板的清洗和脱脂，并且消除粘附在其上的助焊剂残留物和灰尘颗粒，并且显示出高清洁能力，而不会发生挥发残余物（包括离子） 处理表面上的残留物可能达到溶剂组分分解的高稳定性。

公开(公告)号：US4733087A

公开(公告)日：1988-03-22

申请号：US876467

申请日：1986-06-20

申请人： Masamichi Narita ,  Yoshio Miura ,  Hideaki Kikuchi

发明人： Masamichi Narita ,  Yoshio Miura ,  Hideaki Kikuchi

IPC分类号： H01J37/317 ,  G21K5/08 ,  H01L21/265 ,  H01L21/302 ,  H01L21/68

CPC分类号： H01L21/68 ,  G21K5/08

摘要： A tilting mechanism tilts the wafer holding portions for wafers in any direction with respect to the direction of ion beams emitted from an ion source. The tilting mechanism is comprised of a linking mechanism for transmitting the rotation of the receiving plates to the wafer holding portions, tilted links for tilting the wafer holding portions, and a shaft being coupled to the tilted links and moving in the rotary disc. The wafer holding portions provide spherical portions, and the spherical portions are inserted in the receiving plates. A pin of the preceiving plates is fitted into the groove of the wafer holding portion. The distances between the ion source and the respective wafers are maintained equal. The ion beam irradiates uniformly the respective wafers and treats uniformly the respective wafers.

摘要翻译： 倾斜机构相对于从离子源发射的离子束的方向在任何方向上倾斜晶片的晶片保持部分。 倾斜机构包括用于将接收板的旋转传递到晶片保持部分的连接机构，用于倾斜晶片保持部分的倾斜连杆，以及连接到倾斜连杆并在旋转盘中移动的轴。 晶片保持部分提供球形部分，并且球形部分插入接收板中。 预制板的销装配在晶片保持部分的槽中。 离子源和各个晶片之间的距离保持相等。 离子束均匀地照射各个晶片并均匀地处理各个晶片。

公开(公告)号：US08343830B2

公开(公告)日：2013-01-01

申请号：US12059754

申请日：2008-03-31

申请人： Hideaki Kikuchi ,  Kouichi Nagai

发明人： Hideaki Kikuchi ,  Kouichi Nagai

IPC分类号： H01L21/8242

CPC分类号： H01L28/40 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76897 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L2924/3011

摘要： There is provided a method for manufacturing a semiconductor device, including, forming a first insulating film on a semiconductor substrate, forming a capacitor on the first insulating film, forming a second insulating film covering the capacitor, forming a metal wiring on the second insulating film, forming a first capacitor protective insulating film covering the metal wiring and the second insulating film, forming an insulating sidewall on a side of the metal wiring, forming a third insulating film on the insulating sidewall, forming a hole by etching the third insulating film under a condition that an etching rate of the insulating sidewall would be lower than that of the third insulating film, and forming a conductive plug inside the hole.

摘要翻译： 提供了一种制造半导体器件的方法，包括在半导体衬底上形成第一绝缘膜，在第一绝缘膜上形成电容器，形成覆盖电容器的第二绝缘膜，在第二绝缘膜上形成金属布线 形成覆盖所述金属布线和所述第二绝缘膜的第一电容器保护绝缘膜，在所述金属布线的侧面上形成绝缘侧壁，在所述绝缘侧壁上形成第三绝缘膜，通过蚀刻所述第三绝缘膜而形成孔 绝缘侧壁的蚀刻速度比第三绝缘膜低的条件，在孔内形成导电塞。

公开(公告)号：US20100001372A1

公开(公告)日：2010-01-07

申请号：US12500262

申请日：2009-07-09

申请人： Yukimasa Miyazaki ,  Kouichi Nagai ,  Hideaki Kikuchi

发明人： Yukimasa Miyazaki ,  Kouichi Nagai ,  Hideaki Kikuchi

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L27/11507 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76829 ,  H01L21/76832 ,  H01L27/11509

摘要： Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.

摘要翻译： 即使当在设置有接触孔的层之间存在氧化铝膜时，也可以获得稳定的接触孔形成。 该方法包括在半导体衬底上形成第一元件层的步骤; 在所述第一元件层上形成第一层间绝缘膜; 在所述第一层间绝缘膜上形成第二元件层; 在所述第二元件层上形成第二层间绝缘膜; 在所述第二层间绝缘膜上形成孔抗蚀剂图案; 通过蚀刻第二层间绝缘膜进行用于形成空穴的第一蚀刻; 以及通过蚀刻所述第一层间绝缘膜进行第二蚀刻以将孔延伸到所述第一元件层。

公开(公告)号：US20090278231A1

公开(公告)日：2009-11-12

申请号：US12458496

申请日：2009-07-14

申请人： Kouichi Nagai ,  Hideaki Kikuchi ,  Naoya Sashida ,  Yasutaka Ozaki

发明人： Kouichi Nagai ,  Hideaki Kikuchi ,  Naoya Sashida ,  Yasutaka Ozaki

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L27/11502 ,  H01L21/02063 ,  H01L27/0688 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/57

摘要： The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to the second conductor plug 62 or the third conductor plug 62.

摘要翻译： 半导体器件包括形成在半导体衬底10上的第一绝缘膜26，埋在第一接触孔28a中的第一导体插塞32，第一接触孔28a形成在源极/漏极扩散层22上，形成在第一绝缘膜26上的电容器44 在第一绝缘膜26上形成的覆盖电容器44的第一氢扩散防止膜48，形成在第一氢扩散防止膜上并具有表面平坦化的第二绝缘膜50，形成在第一氢上的第二氢扩散防止膜52 具有表面平坦化的扩散防止膜26，形成在第二绝缘膜50上的第二氢扩散防止膜52，埋在第二接触孔56中的第二导体插塞62，第二接触孔56形成在下电极38或下电极38的上电极42 电容器44，埋在第一接触孔58中的第三导体插头62，并形成在第一导体插塞32的下方 连接到第二导体插头62或第三导体插头62的部分64。

公开(公告)号：US20080006867A1

公开(公告)日：2008-01-10

申请号：US11849715

申请日：2007-09-04

申请人： Hideaki Kikuchi ,  Kouichi Nagai

发明人： Hideaki Kikuchi ,  Kouichi Nagai

IPC分类号： H01L29/94

CPC分类号： H01L27/11507 ,  H01L21/76834 ,  H01L27/11502 ,  H01L28/57 ,  H01L28/65

摘要： A ferroelectric capacitor provided with a ferroelectric film (10a) is formed above a semiconductor substrate, and thereafter a wiring (17) directly connected to electrodes (9a, 11a) of a ferroelectric capacitor is formed. Then, a silicon oxide film (18) covering the wiring (17) is formed. As the silicon oxide film (18), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage which occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.

摘要翻译： 在半导体衬底上形成设置有铁电体膜（10A）的铁电电容器，然后形成与铁电电容器的电极（9a，11a）直接连接的配线（17）。 然后，形成覆盖布线（17）的氧化硅膜（18）。 作为氧化硅膜（18），形成具有比氧化铝膜高的加工性的膜。 此外，当形成绝缘膜时在铁电电容器中发生的损伤程度等于或小于形成氧化铝膜时的损伤程度。

公开(公告)号：US20070080382A1

公开(公告)日：2007-04-12

申请号：US11401902

申请日：2006-04-12

申请人： Hideaki Kikuchi ,  Kouichi Nagai

发明人： Hideaki Kikuchi ,  Kouichi Nagai

IPC分类号： H01L29/94

CPC分类号： H01L28/75 ,  H01L21/76813 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/7687 ,  H01L23/5223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/1159 ,  H01L28/60

摘要： A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base film of the conductive plug is the silicide film.

摘要翻译： 在通过在下电极和上电极之间夹入强电介质膜而形成的铁电电容器结构与导电插塞（构成插头的导电材料例如是钨（W））之间形成硅化物膜。 这里，示出了导电性塞子的基底膜为硅化物膜的例子。

公开(公告)号：US07178374B2

公开(公告)日：2007-02-20

申请号：US11001877

申请日：2004-12-02

申请人： Naoyuki Enjoji ,  Toshiki Kawamura ,  Hideaki Kikuchi ,  Takanori Monda

发明人： Naoyuki Enjoji ,  Toshiki Kawamura ,  Hideaki Kikuchi ,  Takanori Monda

IPC分类号： B21D13/02

CPC分类号： H01M8/0263 ,  B21D13/02 ,  B21D22/02 ,  H01M8/0206 ,  H01M8/0254 ,  H01M2008/1095

摘要： A press forming apparatus, for metal separators for fuel cells, has a pair of peripheral portion holding dies which hold a peripheral portion of a material and are movable toward and counter to each other; a pair of intermediate portion forming dies for forming a intermediate portion of the material, which are disposed inside the peripheral portion holding dies and are movable toward and counter to each other; and a pair of center portion forming dies for forming a center portion of the material, which are disposed inside the intermediate portion forming dies and are movable toward and counter to each other, wherein one of the peripheral portion holding dies and one of the intermediate portion forming dies are fixed to each other, one of the center portion forming dies is movable with respect to one of the intermediate portion forming dies toward the material, the other intermediate portion forming die and the other center portion forming die are fixed to each other, and the other intermediate portion forming die is movable with respect to the other peripheral portion holding die.

摘要翻译： 一种用于燃料电池的金属隔板的冲压成型装置，具有一对保持材料的周边部分并能够相对于彼此相对运动的周边保持模具; 一对中间部分形成模具，用于形成所述材料的中间部分，所述中间部分形成模具设置在所述周边部分保持模具的内部并且能够相对于彼此相对移动; 以及一对中心部形成用模具，其形成所述材料的中央部，所述中心部形成用模具配置在所述中间部形成模具的内侧，并且能够朝向和相对移动，其中，所述周缘部保持模具和所述中间部件 成形模具彼此固定，中心部分形成模具中的一个可相对于一个中间部分成形模朝向材料移动，另一个中间部分成型模具和另一个中心部分成形模具彼此固定， 并且另一个中间部分成形模具能够相对于另一个周边部分保持模具移动。

公开(公告)号：US20050285173A1

公开(公告)日：2005-12-29

申请号：US11051643

申请日：2005-01-27

申请人： Kouichi Nagai ,  Hideaki Kikuchi ,  Naoya Sashida ,  Yasutaka Ozaki

发明人： Kouichi Nagai ,  Hideaki Kikuchi ,  Naoya Sashida ,  Yasutaka Ozaki

IPC分类号： H01L21/02 ,  H01L21/31 ,  H01L21/469 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L21/8246 ,  H01L23/48 ,  H01L23/52 ,  H01L27/06 ,  H01L27/108 ,  H01L27/115 ,  H01L29/40 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L21/02063 ,  H01L27/0688 ,  H01L27/11585 ,  H01L27/1159 ,  H01L28/57

摘要： The semiconductor device comprises a first insulation film 26 formed over a semiconductor substrate 10, first conductor plug 32 buried in a first contact hole 28a formed down to a source/drain diffused layer 22, a capacitor 44 formed over the first insulation film 26, a first hydrogen diffusion preventing film 48 formed over the first insulation film 26, covering the capacitor 44, a second insulation film 50 formed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the first hydrogen diffusion preventing film 26 and having the surface planarized, a second hydrogen diffusion preventing film 52 formed over the second insulation film 50, second conductor plug 62 buried in a second contact hole 56 formed down to the lower electrode 38 or the upper electrode 42 of the capacitor 44, a third conductor plug 62 buried in a third contact hole 58 formed down to the first conductor plug 32, and an interconnection 64 connected to the second conductor plug 62 or the third conductor plug 62.

摘要翻译： 半导体器件包括形成在半导体衬底10上的第一绝缘膜26，埋在第一接触孔28a中的第一导体插塞32，其形成在源极/漏极扩散层22上，形成在第一绝缘膜26上的电容器44， 形成在第一绝缘膜26上的覆盖电容器44的第一氢扩散防止膜48，形成在第一氢扩散防止膜上并具有表面平坦化的第二绝缘膜50，形成在第一绝缘膜52上的第二防止氢扩散膜52 表面被平坦化的氢扩散防止膜26，形成在第二绝缘膜50上的第二氢扩散防止膜52，埋在第二接触孔56中的第二导体插塞62，第二接触孔56形成在下电极38或上电极42 电容器44，埋在第一接线孔58中的第三导体插头62，并形成在第一导体插头32上 连接64连接到第二导体插头62或第三导体插头62。

公开(公告)号：US20050118481A1

公开(公告)日：2005-06-02

申请号：US10943073

申请日：2004-09-15

申请人： Masaaki Sakano ,  Hideaki Kikuchi ,  Toshiaki Ariyoshi ,  Keisuke Andou

发明人： Masaaki Sakano ,  Hideaki Kikuchi ,  Toshiaki Ariyoshi ,  Keisuke Andou

IPC分类号： H01M8/02 ,  H01M8/10 ,  H01M8/24

CPC分类号： H01M8/0247 ,  H01M8/02 ,  H01M8/0258 ,  H01M8/0273 ,  H01M8/0276 ,  H01M8/241 ,  H01M8/2465

摘要： In this fuel cell, among a pair of separators in which an electrically conductive portion which is made from an electrically conducting material is surrounded by an insulating portion which is made from an insulating material, a cell side terminal is provided in the inner surface of the insulating portion of at least one said separator, and extends from its interior circumferential side to its outer perimeter side, and is able to electrically connect the interior and exterior of the cell. This cell side terminal is made from a metallic plate, and its inner circumferential side end portion contacts the membrane electrode assembly, while its outer perimeter side end portion extends to the outer perimeter side of the insulating portion. This outer perimeter side end portion can be connected to a measurement side terminal.

摘要翻译： 在该燃料电池中，在由导电材料制成的导电部分被由绝缘材料制成的绝缘部分包围的一对隔板中，电池单元侧端子设置在 至少一个所述分离器的绝缘部分，并且从其内周侧延伸到其外周侧，并且能够电连接所述电池的内部和外部。 该电池侧端子由金属板制成，其内周侧端部与膜电极组件接触，而其外周侧端部延伸到绝缘部分的外周侧。 该外周侧端部可以与测量侧端子连接。