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125 条记录 (耗时 0.049 秒)

    Method and apparatus for specimen fabrication
    41.
    发明授权
    Method and apparatus for specimen fabrication 有权
    用于样品制造的方法和装置

    公开(公告)号：US07897936B2

    公开(公告)日：2011-03-01

    申请号：US11822386

    申请日：2007-07-05

    申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

    发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

    IPC分类号： G21K1/00

    CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

    摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

    摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

    Ion beam processing apparatus
    44.
    发明授权
    Ion beam processing apparatus 有权
    离子束处理装置

    公开(公告)号：US07700931B2

    公开(公告)日：2010-04-20

    申请号：US11674262

    申请日：2007-02-13

    申请人： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

    发明人： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

    IPC分类号： G21K5/10 ,  H01J37/08 ,  A61N5/00 ,  G21G5/00 ,  G21K7/00 ,  G01N23/00

    CPC分类号： H01J37/261 ,  H01J37/20 ,  H01J37/3045 ,  H01J2237/08 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/28 ,  H01J2237/31713 ,  H01J2237/3174 ,  H01J2237/31749

    摘要： The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage. The ion beam processing apparatus is structured so that a segment drawn by projecting the axis, along which the ion beam is drawn out of the ion source, on a plane perpendicular to the ion beam irradiation axis can be at least substantially parallel to a segment drawn by projecting the tilting axis of the second sample stage on the plane perpendicular to the ion beam irradiation axis.

    摘要翻译： 本发明提供了一种离子束处理技术，用于提高使用离子束处理样品的一部分的精度，而不需要比常规所需的处理时间长的处理时间，并且缩短了分离微测试件所需的时间，而没有 打破样品或准备分离所需的时间。 离子束处理装置被构造成使得离子束从离子源拉出的轴和离子束照射到安装在第一样品台上的样品的离子束照射轴将以一定角度相遇 。 此外，离子束处理装置具有通过旋转第二样品台而使离子束照射到样品上的照射角度的倾斜能力，通过进行离子束处理从样品中提取试验片 围绕第二样品台的倾斜轴安装。 离子束处理装置被构造成使得通过将离子束从离子源拉出的轴在垂直于离子束照射轴线的平面上突出的拉伸而绘制的区段可以至少基本上平行于拉伸的区段 通过将第二样品台的倾斜轴投影在垂直于离子束照射轴的平面上。

    Ion source and mass spectrometer instrument using the same
    45.
    发明授权
    Ion source and mass spectrometer instrument using the same 失效
    离子源和质谱仪使用相同

    公开(公告)号：US07645983B2

    公开(公告)日：2010-01-12

    申请号：US10139241

    申请日：2002-05-07

    申请人： Atsumu Hirabayashi ,  Minoru Sakairi ,  Yasuaki Takada ,  Hideaki Koizumi ,  Kaoru Umemura

    发明人： Atsumu Hirabayashi ,  Minoru Sakairi ,  Yasuaki Takada ,  Hideaki Koizumi ,  Kaoru Umemura

    IPC分类号： H01J49/00

    CPC分类号： H01J49/045

    摘要： An ion source includes a body having a gas passage and an orifice. A capillary is inserted into the gas passage so that a tip portion of the capillary extends into the orifice. A gas supplier supplies a gas into the gas passage to form a gas flow through the gas passage along the capillary and through the orifice past a tip of the capillary so that the gas flow sprays a sample solution flowing through the capillary from the tip of the capillary. A flow controller regulates a pressure of the gas in the gas passage to adjust a characteristic value F/S to a predetermined value, where F is a flow rate of the gas flow at standard conditions (20° C., 1 atmosphere), and S is a difference between a cross section of the orifice and a cross section of the tip portion of the capillary in the orifice.

    摘要翻译： 离子源包括具有气体通道和孔的主体。 毛细管插入到气体通道中，使得毛细管的尖端部分延伸到孔中。 气体供应商将气体供应到气体通道中以形成沿着毛细管的气体通道的气流，并且通过孔经过毛细管的尖端，使得气流从其中的尖端喷射流过毛细管的样品溶液 毛细管。 流量控制器调节气体通道中的气体的压力，以将特征值F / S调节到预定值，其中F是在标准条件（20℃，1个大气压）下气流的流量，以及 S是孔口的截面与孔口中的毛细管的尖端部分的横截面之间的差异。

    Manufacturing Equipment Using ION Beam or Electron Beam
    48.
    发明申请
    Manufacturing Equipment Using ION Beam or Electron Beam 有权
    使用离子束或电子束的制造设备

    公开(公告)号：US20080018460A1

    公开(公告)日：2008-01-24

    申请号：US11779686

    申请日：2007-07-18

    申请人： Koji Ishiguro ,  Kaoru Umemura ,  Noriyuki Kaneoka

    发明人： Koji Ishiguro ,  Kaoru Umemura ,  Noriyuki Kaneoka

    IPC分类号： G08B21/00 ,  G21K5/10

    CPC分类号： H01J37/3056 ,  H01J37/3005 ,  H01J37/304 ,  H01J2237/0225 ,  H01J2237/05 ,  H01J2237/24514 ,  H01J2237/248 ,  H01J2237/30455 ,  H01J2237/31744 ,  H01J2237/31745

    摘要： Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam column 1 that is connected to a vacuum vessel 10 and irradiates a sample 35 with an ion beam 11 of nonmetal ion species, a microsampling unit 3 having a probe 16 that extracts a microsample 43 cut out from a sample 35 by the ion beam 11, a gas gun 2 that discharges a gas for bonding the microsample 43 and the probe 16, a pollution measuring beam column 6A that is connected to the same vacuum vessel 10 to which the ion beam column 1 is connected and irradiates an ion beam irradiation traces by the ion beam column 1 with a pollution measuring beam 13, and a detector 7 that detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam column 1 upon irradiation with the pollution measuring beam 13.

    摘要翻译： 提供一种能够通过将半导体制造工序的金属污染的扩散抑制到最小来提高产率的带电粒子束处理装置。 带电粒子束处理装置包括离子束柱1，其连接到真空容器10并用非金属离子种类的离子束11照射样品35，微量取样单元3具有探针16，其提取切出的微量样品43 从样品35通过离子束11，放出用于接合微量样品43和探针16的气体的气枪2，连接到同一真空容器10的污染测量束柱6A，离子束柱 1通过离子束柱1连接并用污染测量光束13照射离子束照射迹线;以及检测器7，其在照射离子束柱1时检测由离子束柱1从离子束照射迹线发射的特征X射线 污染测量梁13。

    Ion beam apparatus and analysis method
    50.
    发明申请
    Ion beam apparatus and analysis method 审中-公开
    离子束装置及分析方法

    公开(公告)号：US20060284115A1

    公开(公告)日：2006-12-21

    申请号：US11439541

    申请日：2006-05-24

    申请人： Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro ,  Hiroyasu Shichi ,  Satoshi Tomimatsu

    发明人： Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro ,  Hiroyasu Shichi ,  Satoshi Tomimatsu

    IPC分类号： H01J37/08

    CPC分类号： H01J37/28 ,  H01J2237/2815 ,  H01J2237/31732

    摘要： A technique is provided which can precisely form a deposition pile in a hole bored in the surface of a specimen. In ion beam apparatus and analysis method, the specimen surface is bored or a deposition pile is formed in the hole bored in the specimen surface. A measuring instrument is provided for measuring a height of the hole bored in the specimen surface or a height of the deposition pile formed in the hole. During fabrication of boring the hole in the specimen surface or fabrication of filling the hole bored in the specimen surface, an image of an area encompassing the hole and the depth of the hole or the height of the deposition pile are displayed.

    摘要翻译： 提供了一种技术，其可以在在样品表面上钻孔的孔中精确地形成沉积桩。 在离子束装置和分析方法中，试样表面无孔或在试样表面孔中形成沉积桩。 提供了一种测量仪器，用于测量在样品表面中钻孔的孔的高度或形成在孔中的沉积桩的高度。 在镗孔试样表面的孔或制作填充试样表面的孔时，显示包围孔的区域和孔的深度或沉积桩的高度的图像。