公开(公告)号：US07061722B2

公开(公告)日：2006-06-13

申请号：US10245330

申请日：2002-09-18

申请人： Hidekazu Kohira ,  Hiromitsu Tokisue ,  Masaaki Matsumoto ,  Masayuki Suzuki ,  Yoshinori Takeuchi ,  Toshihiko Shimizu

发明人： Hidekazu Kohira ,  Hiromitsu Tokisue ,  Masaaki Matsumoto ,  Masayuki Suzuki ,  Yoshinori Takeuchi ,  Toshihiko Shimizu

IPC分类号： G11B5/48

CPC分类号： G11B5/4833

摘要： A magnetic disk unit includes a magnetic disk attached to a spindle so as to be rotatable, a slider having a magnetic head for reading/writing data onto/from the magnetic disk, a suspension for providing the slider with a predetermined load, and an actuator arm for positioning the slider attached to the suspension on the magnetic disk. A first pad including the magnetic head and second pads including no magnetic heads are disposed on an air bearing surface of the slider. During rotation of said magnetic disk, a part of the first pad keeps in contact with the magnetic disk. A load point of the suspension with respect to the slider is positioned between a leading edge of the slider and a position located at a distance equivalent to substantially 0.42 times a whole length of the slider from the leading edge of the slider.

公开(公告)号：US20060110974A1

公开(公告)日：2006-05-25

申请号：US11327901

申请日：2006-01-09

申请人： Masayuki Suzuki ,  Jun-ichi Watanabe

发明人： Masayuki Suzuki ,  Jun-ichi Watanabe

IPC分类号： H01R12/24

CPC分类号： H01R12/592 ,  H01R12/57 ,  H01R12/774 ,  H01R12/79 ,  H01R12/88 ,  H01R2201/04 ,  H01R2201/16

摘要： A connector includes contacts each having a contact portion, an elastic portion and a fulcrum portion between the contact portion and a connection portion, and a pressure receiving portion; a housing fixing the contacts; and a slider having urging portions pivotally moved between the connection and pressure receiving portions of the contacts to urging the contact portions against the circuit board, thereby achieving reliable connection and miniaturization of the connector. In an aspect, the housing is formed on the side of a board insertion opening with a recessed portion for conducting the board. In another aspect, the contact includes upper and lower contact portions one above the other arranged alternately staggered so as to be connected to a circuit board having contact portions alternately staggered, so that no defective connection occurs, even if the circuit board is inserted erroneously upside down. In a further aspect, the connector further includes locking members having an engaging portion which engages an anchoring portion of the circuit board to prevent the circuit board from being removed. In one aspect, contacts of two kinds are inserted into the housing from opposite sides, respectively so that these contacts of the two kinds are into contact with the contact portions on respective surfaces of the circuit board. In a further aspect, moreover, a plate-shaped piece is provided in opposition to the contact portions of the contacts to prevent the housing from being deformed.

公开(公告)号：US07044773B2

公开(公告)日：2006-05-16

申请号：US10417773

申请日：2003-04-17

申请人： Masayuki Suzuki ,  Jun-ichi Watanabe

发明人： Masayuki Suzuki ,  Jun-ichi Watanabe

IPC分类号： H01R9/07

CPC分类号： H01R12/592 ,  H01R12/57 ,  H01R12/774 ,  H01R12/79 ,  H01R12/88 ,  H01R2201/04 ,  H01R2201/16

摘要： A connector includes contacts each having a contact portion, an elastic portion and a fulcrum portion between the contact portion and a connection portion, and a pressure receiving portion; a housing fixing the contacts; and a slider having urging portions pivotally moved between the connection and pressure receiving portions of the contacts to urging the contact portions against the circuit board, thereby achieving reliable connection and miniaturization of the connector. In an aspect, the housing is formed on the side of a board insertion opening with a recessed portion for conducting the board. In another aspect, the contact includes upper and lower contact portions one above the other arranged alternately staggered so as to be connected to a circuit board having contact portions alternately staggered, so that no defective connection occurs, even if the circuit board is inserted erroneously upside down. In a further aspect, the connector further includes locking members having an engaging portion which engages an anchoring portion of the circuit board to prevent the circuit board from being removed. In one aspect, contacts of two kinds are inserted into the housing from opposite sides, respectively so that these contacts of the two kinds are into contact with the contact portions on respective surfaces of the circuit board. In a further aspect, moreover, a plate-shaped piece is provided in opposition to the contact portions of the contacts to prevent the housing from being deformed.

公开(公告)号：US20060017905A1

公开(公告)日：2006-01-26

申请号：US11199137

申请日：2005-08-09

申请人： Masayuki Suzuki

发明人： Masayuki Suzuki

IPC分类号： G03B27/54

CPC分类号： G03F7/70233 ,  G02B17/0657

摘要： A projection optical system for performing reduction projection of a pattern of a reticle onto a projection plane. The system includes a first mirror having a concave reflective surface, a second mirror having a reflective surface, a third mirror having a convex reflective surface, a fourth mirror having a concave reflective surface, a fifth mirror having a convex reflective surface, and a sixth mirror having a concave reflective surface. The reflective surface of the fourth mirror has a curvature radius of not less than 400 mm and not more than 800 mm in absolute value. The reflective surface of the sixth mirror has a curvature radius of not less than 400 mm and not more than 600 mm in absolute value, and the reflective surfaces of the first, second, third, fourth, fifth and sixth mirrors have curvatures of not more than 1500 mm in absolute value, respectively.

公开(公告)号：US06969671B2

公开(公告)日：2005-11-29

申请号：US08964457

申请日：1997-11-04

申请人： Hiromi Shimazu ,  Tsuyoshi Baba ,  Masayuki Suzuki ,  Hideo Miura

发明人： Hiromi Shimazu ,  Tsuyoshi Baba ,  Masayuki Suzuki ,  Hideo Miura

IPC分类号： H01L23/485 ,  H01L23/522 ,  H01L21/28

CPC分类号： H01L23/485 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A diffusion layer 3a of a silicon substrate, a polycrystalline silicon material 10, or a gate electrode 12 is connected to a conductive film 8 through a titanium silicide film 6 within a contact hole 5 provided in an insulating film 4. The titanium silicide film 6 is formed by the silicide reaction between a titanium film 7 and the silicon. The upper limit of the thickness of the titanium silicide film 6, and the upper limit of the titanium film 7 are specified by the internal stress within the conductive film 8.

摘要翻译： 硅衬底，多晶硅材料10或栅电极12的扩散层3a通过设置在绝缘膜4中的接触孔5内的硅化钛膜6连接到导电膜8。 钛硅化物膜6由钛膜7和硅之间的硅化物反应形成。 硅化钛膜6的厚度的上限和钛膜7的上限由导电膜8内的内应力决定。

公开(公告)号：US20050249779A1

公开(公告)日：2005-11-10

申请号：US10530813

申请日：2003-10-03

申请人： Munehiro Oda ,  Sigeru Aizawa ,  Masayuki Uchida ,  Masayuki Suzuki ,  Manabu Sase

发明人： Munehiro Oda ,  Sigeru Aizawa ,  Masayuki Uchida ,  Masayuki Suzuki ,  Manabu Sase

IPC分类号： A23C19/08 ,  A23C19/082 ,  A23C9/12 ,  A61K47/00

CPC分类号： A23C19/082 ,  A23C19/08

摘要： Processed cheeses with an antihypertensive effect greater than that of conventional cheese are provided in order to obtain a sufficient antihypertensive effect with a small intake. Specifically, processed cheeses with ACE inhibitory activity of 350 units per gram or more are manufactured using natural cheese such as cheddar cheese produced in New Zealand and Emmental cheese produced in Switzerland with ACE inhibitory activity of 420 units per grams or more. In addition, it is preferable to use low salt or unsalted natural cheese as a raw material, and use potassium salt as molten salt in order to make sodium content 990 mg or less per 100 g of processed cheese.

摘要翻译： 提供具有比常规乳酪更高的抗高血压作用的加工奶酪，以便以小的摄取获得足够的抗高血压作用。 具体来说，使用天然干酪如新西兰生产的切达干酪和瑞士生产的Emmental奶酪，每克或更多的ACE抑制活性为420单位，制成具有350单位/克或更多的ACE抑制活性的加工奶酪。 此外，优选使用低盐或无盐天然干酪作为原料，并且使用钾盐作为熔融盐，以使每100g加工奶酪的钠含量为990mg以下。

公开(公告)号：US20050186729A1

公开(公告)日：2005-08-25

申请号：US11110693

申请日：2005-04-21

申请人： Shinichi Fukada ,  Naotaka Hashimoto ,  Masanori Kojima ,  Hiroshi Momiji ,  Hiromi Abe ,  Masayuki Suzuki

发明人： Shinichi Fukada ,  Naotaka Hashimoto ,  Masanori Kojima ,  Hiroshi Momiji ,  Hiromi Abe ,  Masayuki Suzuki

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/8242

CPC分类号： H01L29/6659 ,  H01L21/2652 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7833

摘要： An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p/n junction with a well region (3), and one implantation of a dopant ion that does not influence a position of the p/n junction between the source and drain regions (S and D) and the well region with a shallow implantation depth and a large implantation amount. After conducting an activation heat treatment of the dopant, a surface of the source/drain region is made into cobalt silicide 12, so that the source/drain region (S and D) can have a low resistance, and a p/n junction leakage can be reduced.

摘要翻译： 用于形成源区和漏区（S和D）的掺杂剂离子的注入步骤被划分为用于与阱区（3）形成ap / n结的掺杂剂离子的一次注入，并且一次注入掺杂剂离子 不影响源极和漏极区域（S和D）之间的p / n结的位置以及具有浅的注入深度和大的注入量的阱区域。 在对掺杂剂进行激活热处理之后，将源极/漏极区域的表面制成硅化钴12，使得源极/漏极区域（S和D）可以具有低电阻，并且ap / n结泄漏可以 减少

公开(公告)号：US20050118805A1

公开(公告)日：2005-06-02

申请号：US11006702

申请日：2004-12-08

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L23/532 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETs by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

公开(公告)号：US20050056635A1

公开(公告)日：2005-03-17

申请号：US10670337

申请日：2003-09-26

申请人： Masayuki Suzuki ,  Hideo Ishizu

发明人： Masayuki Suzuki ,  Hideo Ishizu

IPC分类号： H05B3/00 ,  F27D19/00 ,  F27D21/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/324 ,  H05B1/02

CPC分类号： H05B1/0233 ,  F27D19/00 ,  F27D21/0014 ,  H01L21/67248

摘要： To find the deterioration degree of a heater that heats a furnace. The present invention includes: a current detector 21 that detects a level of a current flowing through a heater 7 that is heated based on a commercial power source 1; a voltage detector 20 that detects a level of a voltage applied to the heater 7; a temperature detector 22 that detects a temperature of the heater 7; a table memory 14 on which a temperature coefficient of resistance for use in calculation of a resistance of the heater 7 at a time of manufacture is stored; and a CPU 17A that calculates a resistance of the heater 7 at an inspection time based on respective detection results by the voltage detector 20 and the current detector 21 and calculates the resistance of the heater 7 at a reference time based on a detection result by the temperature detector 22 and the temperature coefficient of resistance stored on the table memory 14, thereby finding the deterioration degree of the heater 7 based on the resistance of the heater 7 at the inspection time and the resistance of the heater 7 at the reference time.

摘要翻译： 找到加热炉的加热器的劣化程度。 本发明包括：电流检测器21，其检测流过基于商用电源1加热的加热器7的电流的电平; 检测施加到加热器7的电压的电平的电压检测器20; 温度检测器22，其检测加热器7的温度; 存储用于计算制造时的加热器7的电阻的电阻的温度系数的表存储器14; 以及CPU 17A，其基于电压检测器20和电流检测器21的各检测结果，在检查时刻计算加热器7的电阻，并基于检测结果由基准时间计算加热器7的电阻 温度检测器22和存储在台式存储器14上的电阻温度系数，从而基于加热器7在检查时的电阻和加热器7在参考时间的电阻而发现加热器7的劣化程度。

公开(公告)号：US20050003586A1

公开(公告)日：2005-01-06

申请号：US10902785

申请日：2004-08-02

申请人： Yoshihiko Shimanuki ,  Masayuki Suzuki

发明人： Yoshihiko Shimanuki ,  Masayuki Suzuki

IPC分类号： H01L23/12 ,  H01L21/301 ,  H01L21/304 ,  H01L21/48 ,  H01L21/56 ,  H01L23/28 ,  H01L23/31 ,  H01L21/44 ,  H01L21/50 ,  H01L23/495

CPC分类号： H01L24/32 ,  H01L21/4832 ,  H01L21/561 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/05554 ,  H01L2224/29007 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/3512

摘要： A non-leaded resin-sealed semiconductor device is manufactured by the steps of providing a conductive flat substrate (metal plate) of copper plate or the like, fixing semiconductor elements respectively to predetermined positions on the principal surface of the substrate by an insulating adhesive, electrically connecting electrodes on the surfaces of the semiconductor elements with predetermined partition parts of the substrate separate from the semiconductor elements by conductive wires, forming an insulating resin layer on the principal surface of the substrate to cover the semiconductor elements and wires, selectively removing the substrate from the rear of said substrate to form electrically independent partition parts whereof at least some are external electrode terminals, and selectively removing said resin layer to fragment the device into regions containing the semiconductor elements and the plural partition parts around the semiconductor elements. Thus, there is provided a compact non-leaded semiconductor device having a large number of electrode terminals.

摘要翻译： 非导电树脂密封半导体器件通过以下步骤制造：提供铜板等的导电平面基板（金属板），通过绝缘粘合剂将半导体元件分别固定在基板的主表面上的预定位置， 将半导体元件的表面上的电极与基板的预定分隔部分用导电线与半导体元件分开，在基板的主表面上形成绝缘树脂层以覆盖半导体元件和导线，选择性地去除基板 从所述基板的后部形成电气独立的分隔部，其中至少一些是外部电极端子，并且选择性地去除所述树脂层以将器件分解成包含半导体元件的区域和围绕半导体元件的多个分隔部分。 因此，提供了具有大量电极端子的紧凑的非铅半导体器件。