公开(公告)号：US20070169891A1

公开(公告)日：2007-07-26

申请号：US10933383

申请日：2004-09-03

申请人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

发明人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

IPC分类号： C23F1/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/68757

摘要： A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

摘要翻译： 提供了一种聚焦环和等离子体处理装置，其能够改善表面的表面均匀性并减少与常规情况相比在半导体晶片的周边部分的背面上沉积的情况。 安装在真空室中的是用于在其上安装半导体晶片的基座，并且安装聚焦环以围绕安装在基座上的半导体晶片。 聚焦环包括由电介质制成的环形下部构件和由导电材料制成并安装在下部构件上的环形上部构件。 上部构件包括平坦部，该平坦部是具有位于比半导体晶片W的待加工表面高的顶面的外周部，以及作为向内倾斜的内周部的倾斜部。

公开(公告)号：US20050257743A1

公开(公告)日：2005-11-24

申请号：US11137516

申请日：2005-05-26

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： H05H1/46 ,  C23C16/00 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01J37/32577 ,  H01J37/32082 ,  H01J37/32174 ,  H01L21/31116

摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

摘要翻译： 一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。 上电极被设置为面对放置在处理容器内的目标衬底。 电动给料器包括在环形方向上连续地连接到上电极的第一圆柱形导电构件。 电馈送器被配置为将第一RF电源的第一RF输出提供给上电极。

公开(公告)号：US06764575B1

公开(公告)日：2004-07-20

申请号：US10069512

申请日：2002-03-04

申请人： Tomomi Yamasaki ,  Hidetoshi Kimura ,  Junichi Arami ,  Hiroo Ono ,  Akira Koshiishi ,  Koji Miyata

发明人： Tomomi Yamasaki ,  Hidetoshi Kimura ,  Junichi Arami ,  Hiroo Ono ,  Akira Koshiishi ,  Koji Miyata

IPC分类号： C23C1434

CPC分类号： H01J37/3266 ,  H01J37/3408

摘要： When a substrate 30 is to be subjected to a magnetron plasma process, a dipole ring magnet 21 is provided, in which a large number of anisotropic segment magnets 22 are arranged in a ring-like shape around the outer wall of a chamber 1. A magnetic field gradient, wherein the magnetic field strength decreases from the E pole side toward the W pole side in a direction perpendicular to a magnetic field direction B, is formed in a plane perpendicular to the direction of an electric field between a pair of electrodes separated from each other. The anisotropic segment magnets have a first section a including anisotropic segment magnets arranged in the vicinity of a region A located outside an E pole side end of the process substrate with an N pole thereof being directed toward this region, and a second portion b including anisotropic segment magnets arranged with an S pole thereof being directed toward this region, to locally increase the magnetic field strengths of the first and second regions.

摘要翻译： 当对基板30进行磁控管等离子体处理时，设置偶极环磁体21，其中大量的各向异性磁体22围绕室1的外壁排列成环状。 其磁场强度在与磁场方向B垂直的方向从E极侧朝向W极侧的磁场强度形成在与分离的一对电极之间的电场方向垂直的面内 从彼此。 各向异性区段磁体具有第一区段a，其包括各向异性区段磁体，其布置在位于处理衬底的E极侧端外侧的区域A的附近，其N极指向该区域，第二部分b包括各向异性 将其S极布置的段磁体指向该区域，以局部地增加第一和第二区域的磁场强度。

公开(公告)号：US06576860B2

公开(公告)日：2003-06-10

申请号：US10160243

申请日：2002-06-04

申请人： Chishio Koshimizu ,  Jun Ooyabu ,  Hideki Takeuchi ,  Akira Koshiishi

发明人： Chishio Koshimizu ,  Jun Ooyabu ,  Hideki Takeuchi ,  Akira Koshiishi

IPC分类号： B23K1000

CPC分类号： H01J37/32082 ,  H01J37/32165

摘要： A plasma processing method comprises the steps of supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of starting plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on the surface of the substrate.

公开(公告)号：US06190495B1

公开(公告)日：2001-02-20

申请号：US09361992

申请日：1999-07-28

申请人： Kazuhiro Kubota ,  Shigeki Tozawa ,  Jun Hirose ,  Akira Koshiishi ,  Tomomi Kondo

发明人： Kazuhiro Kubota ,  Shigeki Tozawa ,  Jun Hirose ,  Akira Koshiishi ,  Tomomi Kondo

IPC分类号： B23K1000

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3266

摘要： The magnetron plasma processing apparatus includes a vacuum chamber in which a semiconductor wafer is accommodated. In the chamber, a pair of electrodes are provided to face each other, and the wafer is placed on one electrode. Between a pair of the electrodes, a vertical electric field is formed, and a horizontal magnetic field is formed by the dipole ring magnet to cross perpendicularly to the electric field. The magnetic field has a gradient of the magnetic field intensity such that the intensity is high on the upstream side and is low on the downstream side in the electron-drift direction. Further, the magnetic field is formed such that the intensity is made uniform over a large area including the end portion of the wafer on the upstream side in the electron-drift direction and a region right outside it.

摘要翻译： 磁控管等离子体处理装置包括容纳半导体晶片的真空室。 在室内设置一对电极以彼此面对，并且将晶片放置在一个电极上。 在一对电极之间形成垂直电场，并且由偶极环磁体形成水平磁场以垂直于电场交叉。 磁场具有磁场强度的梯度，使得上游侧的强度高，并且在电子漂移方向的下游侧具有低的磁场强度。 此外，磁场形成为使得强度在包括晶片在电子漂移方向上游侧的晶片的端部和右侧的区域的大面积上均匀。

公开(公告)号：US6072147A

公开(公告)日：2000-06-06

申请号：US982388

申请日：1997-12-02

申请人： Akira Koshiishi ,  Jun Ooyabu

发明人： Akira Koshiishi ,  Jun Ooyabu

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23H1/00

CPC分类号： H01J37/32174 ,  H01J37/321

摘要： A plasma processing system capable of carrying out a uniform processing is provided.According to the present invention, a substantially annular high-frequency antenna 156 of a predetermined number of turns, e.g., 1 turn, is provided in an opening 102b via a first shielding member 160 and a dielectric member 158. The capacitance of a variable capacitor 172 connected to ground is adjusted so that series resonance occurs at the mid point of the high-frequency antenna 156. With this construction, it is possible to form a desired electric field in a plasma producing space to produce a high-density plasma. In addition, a feeding member 126 is formed so that the substantially vertical cross-section thereof has a profile expressed by an exponential function r=f(L). Therefore, it is possible to supply a high-frequency power to an upper electrode without causing the electric breakdown and the damping of the high-frequency power.

摘要翻译： 提供能够进行均匀处理的等离子体处理系统。 根据本发明，通过第一屏蔽构件160和介电构件158，在开口102b中设置预定匝数（例如1匝）的大致环形的高频天线156。可变电容器 调整与地面连接的172，使得在高频天线156的中点发生串联谐振。利用这种结构，可以在等离子体产生空间中形成期望的电场以产生高密度等离子体。 此外，形成进给构件126，使得其基本上垂直的横截面具有由指数函数r = f（L）表示的轮廓。 因此，可以向上电极提供高频电力，而不会引起电击穿和高频电力的阻尼。

公开(公告)号：US5972799A

公开(公告)日：1999-10-26

申请号：US998200

申请日：1997-12-29

申请人： Akira Koshiishi ,  Ryuji Honda

发明人： Akira Koshiishi ,  Ryuji Honda

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： There is provided a dry etching method which does not contribute to earth anathermal due to the green house effect and which has a good etching characteristics. According to the present invention, the flow rates of Ar, O.sub.2, and C.sub.3 F.sub.6 supplied from gas sources 152, 154 and 156 are regulated by a mass flow controller MFC 146, 148 and 150 and valves 140, 142 and 144, respectively, to be mixed. The mixed gas is introduced onto a wafer W via a gas introducing pipe 138, a gas inlet 134, a space 130 and through holes 124a while the flow ratio of O.sub.2 to C.sub.3 F.sub.6 is set to be 0.1.ltoreq.O.sub.2 /C.sub.3 F.sub.6 .ltoreq.1.0 and the partial pressure of C.sub.3 F.sub.6 is set to be in the range of from 0.5 mTorr to 2.0 mTorr.

摘要翻译： 提供了由于温室效应而对地球天然气无贡献并具有良好蚀刻特性的干式蚀刻方法。 根据本发明，由气源152,154和156供应的Ar，O2和C3F6的流量由质量流量控制器MFC 146,148和150以及阀140,142和144分别调节为 混合 通过气体导入管138，气体入口134，空间130和通孔124a将混合气体引入到晶片W上，同时将O 2与C 3 F 6的流量比设定为0.1 / O 2 / C 3 F 6 1.0，C3F6的分压设定在0.5mTorr至2.0mTorr的范围内。

公开(公告)号：US5083061A

公开(公告)日：1992-01-21

申请号：US614600

申请日：1990-11-15

申请人： Akira Koshiishi ,  Kohei Kawamura

发明人： Akira Koshiishi ,  Kohei Kawamura

IPC分类号： H01J27/08 ,  H01J27/20 ,  H01J37/08 ,  H01L21/265

CPC分类号： H01J27/08 ,  H01J2237/08 ,  H01J2237/31701

摘要： An ion source according to the present invention includes a first chamber, including a main chamber having an electron generating arrangement therein, and a sub-chamber communicating with the main chamber through a nozzle, for producing a first plasma by a discharge. A supply is also provided for supplying a first gas for a discharge into the main chamber, as well as an electron extracting arrangement for extracting electrons from the first plasma. Also included are a second chamber for producing a second plasma by discharge excitation of the extracted electrons and ionizing a second gas as a source gas, a further supply for supplying the second gas into the second chamber, and a magnetic field generator for generating a magnetic field for guiding the extracted electrons toward the second chamber. The electron extracting arrangement includes an electrode between the sub-chamber and the second chamber. The electrode has a first hole, formed at a position opposite to the opening of the nozzle, for allowing the extracted electrons to pass therethrough and to move into the second chamber, and second holes, arranged around the first hole, for allowing part of the first gas injected from the nozzle to pass therethrough and to move into the second chamber. Part of the first gas is drawn into the second chamber through the second holes of the electrode, and the density of the first gas passing through the first hole is decreased.

摘要翻译： 根据本发明的离子源包括：第一室，包括其中具有电子产生装置的主室，以及通过喷嘴与主室连通的子室，用于通过排放产生第一等离子体。 还提供一种用于将第一气体供应到主室中的电源，以及用于从第一等离子体中提取电子的电子提取装置。 还包括第二室，用于通过所提取的电子的放电激发产生第二等离子体，并将作为源气体的第二气体电离，用于将第二气体供应到第二室中的另外的供应源，以及用于产生磁场的磁场发生器 用于将提取的电子引导到第二室。 电子提取装置包括在子室和第二室之间的电极。 电极具有形成在与喷嘴的开口相对的位置处的第一孔，用于允许所提取的电子通过并移动到第二室中，以及设置在第一孔周围的第二孔，用于允许部分 从喷嘴喷射的第一气体通过并移动到第二室中。 第一气体的一部分通过电极的第二孔被吸入第二室，并且通过第一孔的第一气体的密度降低。

公开(公告)号：US08852385B2

公开(公告)日：2014-10-07

申请号：US11867371

申请日：2007-10-04

申请人： Akira Koshiishi ,  Noriyuki Kobayashi ,  Shigeru Yoneda ,  Kenichi Hanawa ,  Shigeru Tahara ,  Masaru Sugimoto

发明人： Akira Koshiishi ,  Noriyuki Kobayashi ,  Shigeru Yoneda ,  Kenichi Hanawa ,  Shigeru Tahara ,  Masaru Sugimoto

IPC分类号： C23F1/00 ,  H01L21/306 ,  H01L21/768 ,  H01L21/311 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32183 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32174 ,  H01J2237/334 ,  H01J2237/3346 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76834

摘要： An upper electrode and a lower electrode are disposed opposite to each other in a process container configured to be vacuum-exhausted. The upper electrode is connected to a first RF power supply configured to apply a first RF power for plasma generation. The lower electrode is connected to a second RF power supply configured to apply a second RF power for ion attraction. The second RF power supply is provided with a controller preset to control the second RF power supply to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power set to deposit polymers on a predetermined film on a wafer and a second power set to promote etching of the predetermined film on the wafer.

摘要翻译： 上部电极和下部电极在被构造为真空排气的处理容器中彼此相对设置。 上电极连接到被配置为施加用于等离子体产生的第一RF功率的第一RF电源。 下电极连接到被配置为施加用于离子吸引的第二RF功率的第二RF电源。 第二RF电源设置有预设的控制器，以控制第二RF电源以功率调制模式操作，该功率调制模式以预定周期执行在第一功率组之间的功率调制，以在晶片上的预定薄膜上沉积聚合物， 功率设置以促进在晶片上蚀刻预定膜。

公开(公告)号：US08741098B2

公开(公告)日：2014-06-03

申请号：US11889340

申请日：2007-08-10

申请人： Akira Koshiishi ,  Shinji Himori ,  Shoichiro Matsuyama

发明人： Akira Koshiishi ,  Shinji Himori ,  Shoichiro Matsuyama

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32009 ,  H01J37/32532

摘要： Disclosed herein is a table 2 for use in a plasma processing system 1 that includes an electrically conductive member serving as a lower electrode 21 for plasma formation, a lower dielectric layer 22 (first dielectric layer) formed on the electrically conductive member so that it covers the center of the upper surface of the electrically conductive member, serving to make a high-frequency electric field to be applied to plasma via a substrate uniform, and an upper dielectric layer 24 (second dielectric layer) having a relative dielectric constant of 100 or more, formed on the electrically conductive member so that it is in contact at least with the edge of the substrate, in order to prevent a high-frequency current that has propagated along the electrically conductive member face from leaking to the outside of the substrate (wafer W).

摘要翻译： 本文公开了一种用于等离子体处理系统1的表2，其包括用作等离子体形成的下电极21的导电构件，形成在导电构件上的下电介质层22（第一电介质层），使得其覆盖 导电构件的上表面的中心，用于使通过基板均匀地施加到等离子体的高频电场;以及具有相对介电常数为100的上电介质层24（第二电介质层） 更多地形成在导电构件上，使得其至少与衬底的边缘接触，以便防止沿着导电构件面传播的高频电流泄漏到衬底的外部（ 晶圆W）。