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138 条记录 (耗时 0.038 秒)

    Method for Fabricating Dual Damascene Structures
    42.
    发明申请
    Method for Fabricating Dual Damascene Structures 失效
    双镶嵌结构的制作方法

    公开(公告)号：US20080214011A1

    公开(公告)日：2008-09-04

    申请号：US12121502

    申请日：2008-05-15

    申请人： Matthew E. Colburn ,  Dario L. Goldfarb

    发明人： Matthew E. Colburn ,  Dario L. Goldfarb

    IPC分类号： H01L21/428 ,  G03F1/00

    CPC分类号： G03F7/094 ,  G03F1/50

    摘要： A method for fabricating a dual damascene structure includes providing a multi-layer photoresist stack comprising a first photoresist layer and a second photoresist layer, wherein each photoresist layer has a distinct dose-to-clear value, exposing said photoresist stack to one or more predetermined patterns of light, and developing said photo-resist layers to form a multi-tiered structure in the photo-resist layers.

    摘要翻译： 一种用于制造双镶嵌结构的方法包括提供包括第一光致抗蚀剂层和第二光致抗蚀剂层的多层光致抗蚀剂层，其中每个光致抗蚀剂层具有不同的剂量至清除值，将所述光致抗蚀剂层暴露于一个或多个预定的 并且显影所述光致抗蚀剂层以在光致抗蚀剂层中形成多层结构。

    METAL CAPPING PROCESS FOR BEOL INTERCONNECT WITH AIR GAPS
    44.
    发明申请
    METAL CAPPING PROCESS FOR BEOL INTERCONNECT WITH AIR GAPS 失效
    用于空气GAPS的BEOL互连的金属封盖工艺

    公开(公告)号：US20080169565A1

    公开(公告)日：2008-07-17

    申请号：US11622188

    申请日：2007-01-11

    申请人： Griselda Bonilla ,  Shyng-Tsong Chen ,  Matthew E. Colburn ,  Chih-Chao Yang

    发明人： Griselda Bonilla ,  Shyng-Tsong Chen ,  Matthew E. Colburn ,  Chih-Chao Yang

    IPC分类号： H01L23/48 ,  H01L21/4763

    CPC分类号： H01L23/53238 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The embodiments of the invention provide a metal capping process for a BEOL interconnect with air gaps. More specifically an apparatus is provided comprising metal lines within a first dielectric. Metal caps are over the metal lines, wherein the metal caps contact the metal lines. In addition, air gaps are between the metal lines, wherein the air gaps are between the metal caps. A second dielectric is also provided over the bottom portion of a first dielectric, wherein a top portion of the second dielectric is over the metal caps, and wherein top portions of the first dielectric and bottom portions of the second dielectric comprise sides of the air gap. The apparatus further includes dielectric caps over the metal lines, wherein the dielectric caps contact the metal caps.

    摘要翻译： 本发明的实施例提供了一种用于具有气隙的BEOL互连的金属封盖工艺。 更具体地，提供了一种包括在第一电介质内的金属线的装置。 金属盖在金属线上方，金属帽与金属线接触。 此外，气隙在金属线之间，其中气隙在金属盖之间。 第二电介质还设置在第一电介质的底部上方，其中第二电介质的顶部在金属帽之上，并且其中第二电介质的第一电介质和底部的顶部包括气隙的侧面 。 该装置还包括金属线上的电介质盖，其中介电帽与金属盖接触。

    Method for improved process latitude by elongated via integration
    47.
    发明授权
    Method for improved process latitude by elongated via integration 有权

    公开(公告)号：US07071097B2

    公开(公告)日：2006-07-04

    申请号：US10887086

    申请日：2004-07-09

    申请人： Matthew E. Colburn

    发明人： Matthew E. Colburn

    IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L23/48 ,  H01L23/52

    CPC分类号： H01L21/76835 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76829

    摘要： Interconnect dual damascene structure are fabricated by depositing on a layer of at least one dielectric, a mask forming layer for providing the via-level mask layer of the dual damascene structures; creating an elongated via pattern in the via-level mask layer; depositing a layer of line-level dielectric and creating a line pattern through the layer of line-level dielectric, and transferring the line pattern through the projected intersection of the elongated via-level pattern and of the line-level pattern thereby generating an aligned dual damascene structure. A conductive liner layer is deposited in the dual damascene structure followed by filling the dual damascene structure with a conductive fill metal to form a set of metal lines. The metal and liner layers are planarized.

    Process of Multiple Exposures With Spin Castable Films
    50.
    发明申请
    Process of Multiple Exposures With Spin Castable Films 有权
    多次曝光与旋涂膜的工艺

    公开(公告)号：US20120214311A1

    公开(公告)日：2012-08-23

    申请号：US13449741

    申请日：2012-04-18

    申请人： Martin Burkhardt ,  Sean D. Burns ,  Matthew E. Colburn

    发明人： Martin Burkhardt ,  Sean D. Burns ,  Matthew E. Colburn

    IPC分类号： H01L21/311

    CPC分类号： H01L21/0274 ,  H01L21/0334 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2221/1021

    摘要： Methods of multiple exposure in the fields of deep ultraviolet photolithography, next generation lithography, and semiconductor fabrication comprise a spin-castable methodology for enabling multiple patterning by completing a standard lithography process for the first exposure, followed by spin casting an etch selective overcoat layer, applying a second photoresist, and subsequent lithography. Utilizing the etch selectivity of each layer, provides a cost-effective, high resolution patterning technique. The invention comprises a number of double or multiple patterning techniques, some aimed at achieving resolution benefits, as well as others that achieve cost savings, or both resolution and cost savings. These techniques include, but are not limited to, pitch splitting techniques, pattern decomposition techniques, and dual damascene structures.

    摘要翻译： 在深紫外光刻，下一代光刻和半导体制造领域中多次曝光的方法包括通过完成用于第一次曝光的标准光刻工艺，随后旋转铸造蚀刻选择性外涂层，实现多重图案化的可旋转铸造方法， 施加第二光刻胶和随后的光刻。 利用各层的蚀刻选择性，提供了经济有效的高分辨率图案化技术。 本发明包括一些双重或多重图案化技术，一些旨在实现分辨率优点的技术，以及其他实现成本节约或者分辨率和成本节省的技术。 这些技术包括但不限于音调分割技术，图案分解技术和双镶嵌结构。