公开(公告)号：US20240047622A1

公开(公告)日：2024-02-08

申请号：US17879902

申请日：2022-08-03

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Thomas Wunderer ,  Max Batres ,  Chris Chua

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L33/465 ,  H01L33/007 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  G02B27/0172

Abstract: A light emitting diode (LED) array includes bottom reflectors patterned as an array of closed shapes on a top plane of a base layer for III-N growth. A three-dimensional III-N structure is epitaxially grown around the array of closed shapes and extending above the bottom reflectors. The three-dimensional III-N structures is a contiguous crystalline structure extending across the array. A laterally grown III-N layer is formed in contact with both the reflectors and the three-dimensional III-N structures, and III-N LED layers are grown on the laterally grown layer. One or more top reflectors are grown or deposited on the III-N LED layers and located over the bottom reflectors.

公开(公告)号：US11780218B2

公开(公告)日：2023-10-10

申请号：US17494208

申请日：2021-10-05

Applicant: Palo Alto Research Center Incorporated

Inventor： Robert A. Street ,  Jengping Lu ,  Joerg Martini ,  David K. Biegelsen ,  Thomas Wunderer

IPC: B41C1/10 ,  B41F31/00 ,  B41F7/02 ,  B41F13/08 ,  B41J2/34 ,  B41J2/335 ,  B41F7/08 ,  B41F7/26 ,  B41M1/06 ,  B41F31/13 ,  B41F31/08 ,  B41N3/03

CPC classification number: B41F13/08 ,  B41C1/1041 ,  B41F7/02 ,  B41F7/08 ,  B41F7/26 ,  B41F31/002 ,  B41F31/08 ,  B41F31/13 ,  B41J2/33535 ,  B41J2/34 ,  B41M1/06 ,  B41N3/03 ,  B41C1/1033 ,  B41P2227/70

Abstract: Based on evaporation of fountain solution from a rotating blanket cylinder to create an image that may be inked and printed, a digitally addressable heater array at or just below the blanket surface evaporates deposited fountain solution and forms a fountain solution latent image on the surface. The heater array has controllable heating elements (e.g., field effect transistors, thin film transistors) that provide a transient heat pattern on the surface to evaporate the fountain solution. Heat is generated by current flow in the heating elements, and power developed by the heating circuit is the product of source-drain voltage and current in the channel. Current may be supplied along data lines by an external voltage controlled by digital electronics to provide the desired heat at heating elements addressed by a specific gate line. The heater array may include a current return line that may be a 2-dimensional mesh.

公开(公告)号：US20220152233A1

公开(公告)日：2022-05-19

申请号：US16952320

申请日：2020-11-19

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  Joerg Martini ,  Patrick Y. Maeda ,  Barbara Cromarty ,  Paloma Fautley

IPC: A61L2/10 ,  A61L2/24 ,  A61L2/26

Abstract: Methods and systems for disinfecting a surface, can include a light source, and a transparent window located above the light source. The light source can be integrated into an object, and an outer surface of the object can be located above the transparent window. Light from the light source can irradiate the outer surface through the transparent window and from within the object to disinfect the outer surface of the object. The light can comprise violet and ultraviolet (UV) light. A photocatalytic layer comprising a photocatalytic material may also be located above the transparent window and below the outer surface.

公开(公告)号：US20190081457A1

公开(公告)日：2019-03-14

申请号：US15703534

申请日：2017-09-13

Applicant: Palo Alto Research Center Incorporated

Inventor： Jorg Jeschke ,  Thomas Wunderer ,  Mark Teepe

IPC: H01S5/343 ,  H01S5/04 ,  H01S5/34 ,  H01S5/32 ,  H01S5/00

Abstract: An edge emitting structure includes an active region configured to generate radiation in response to excitation by a pumping beam incident on the structure. A front facet of the edge emitting structure is configured to emit the radiation generated by the active region. A metallic reflective coating disposed on at least one of the front and rear facets of the edge emitting structure. The metallic reflective coating is configured to reflect the radiation generated by the active region.

公开(公告)号：US10164146B2

公开(公告)日：2018-12-25

申请号：US15209715

申请日：2016-07-13

Applicant: Palo Alto Research Center Incorporated

Inventor： John E. Northrup ,  Bowen Cheng ,  Christopher L. Chua ,  Thomas Wunderer ,  Noble M. Johnson ,  Zhihong Yang

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01S5/042 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01L21/02 ,  H01L33/06 ,  B82Y20/00

Abstract: A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≤xhigh≤0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

公开(公告)号：US20180337515A1

公开(公告)日：2018-11-22

申请号：US15600569

申请日：2017-05-19

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  Noble M. Johnson

IPC: H01S5/343 ,  H01S5/04 ,  H01S5/125 ,  H01S5/02

Abstract: An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.

公开(公告)号：US20170317474A1

公开(公告)日：2017-11-02

申请号：US15646716

申请日：2017-07-11

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  Noble M. Johnson ,  John E. Northrup

IPC: H01S5/343 ,  H01S5/32 ,  H01S5/024 ,  H01S5/04 ,  H01S5/30 ,  H01S5/14 ,  H01S5/183 ,  B82Y20/00 ,  H01S5/327 ,  H01S3/109 ,  H01S5/022

CPC classification number: H01S5/343 ,  B82Y20/00 ,  H01S3/109 ,  H01S5/0222 ,  H01S5/02461 ,  H01S5/04 ,  H01S5/14 ,  H01S5/183 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/1838 ,  H01S5/18383 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3222 ,  H01S5/327 ,  H01S5/34333

Abstract: A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.

公开(公告)号：US09705288B2

公开(公告)日：2017-07-11

申请号：US14828207

申请日：2015-08-17

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  Noble M. Johnson ,  John E. Northrup

IPC: H01S5/343 ,  H01S5/024 ,  H01S5/04 ,  H01S5/14 ,  H01S5/327 ,  B82Y20/00 ,  H01S5/30 ,  H01S5/32 ,  H01S5/183 ,  H01S3/109 ,  H01S5/022

CPC classification number: H01S5/343 ,  B82Y20/00 ,  H01S3/109 ,  H01S5/0222 ,  H01S5/02461 ,  H01S5/04 ,  H01S5/14 ,  H01S5/183 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/1838 ,  H01S5/18383 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3222 ,  H01S5/327 ,  H01S5/34333

Abstract: A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.

公开(公告)号：US09660134B1

公开(公告)日：2017-05-23

申请号：US15094639

申请日：2016-04-08

Applicant: Palo Alto Research Center Incorporated

Inventor： John E. Northrup ,  Thomas Wunderer ,  Jeng Ping Lu ,  Noble M Johnson

IPC: H01L29/12 ,  H01L21/338 ,  H01L33/00

CPC classification number: H01L33/0016 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/861 ,  H01L33/02 ,  H01L33/32

Abstract: A polarization controlled device has a first layer comprising a group III-nitride semiconductor substrate or template; a second group III-nitride semiconductor layer disposed over the group III-nitride semiconductor substrate or template; a third group III-nitride semiconductor layer disposed over the second group III-nitride semiconductor layer; and a fourth group III-nitride semiconductor layer disposed over the third group III-nitride semiconductor layer. A pn junction is formed at an interface between the third and fourth group III-nitride semiconductor layers. A polarization heterojunction is formed between the second group III-nitride semiconductor layer and the third group III-nitride semiconductor layer. The polarization junction has fixed charges of a polarity on one side of the polarization junction and fixed charges of an opposite polarity on an opposite side of the polarization junction. When unbiased, the pn junction comprises a first electric field that opposes the flow of carriers across the pn junction and the polarization junction comprises a second electric field that opposes the flow of oppositely charged carriers across the polarization junction.

公开(公告)号：US20140369367A1

公开(公告)日：2014-12-18

申请号：US13920248

申请日：2013-06-18

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  John E. Northrup ,  Mark R. Teepe ,  Zhihong Yang ,  Christopher L. Chua ,  Noble M. Johnson

IPC: H01S5/343 ,  H01S5/34

CPC classification number: H01S5/343 ,  H01S5/0035 ,  H01S5/0207 ,  H01S5/0261 ,  H01S5/04 ,  H01S5/0425 ,  H01S5/3211 ,  H01S5/3401 ,  H01S5/342 ,  H01S5/34333 ,  H01S2301/176

Abstract: A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s).

Abstract translation: 半导体发光器件包括导光结构，设置在导光结构内的发光层，以及用于在器件内放电多余电荷的结构。 与光束相反，器件可能被电子束激发，以产生电子 - 空穴对。 发光层被配置用于光生成而不需要p-n结，并且因此不嵌入在p-n结的内部或部分内。 消除p型物质的掺杂，减少器件损耗并允许在短波长（如300nm以下）下进行工作。 公开了诸如顶侧包覆层的各种结构，用于放电束诱导的电荷。 单个设备可以用多个电子束泵操作，以使得能够相对较厚的有源层或驱动多个分离的有源层。 合作弯曲的端面适合有源区域内的可能的离轴共振。