公开(公告)号：US20100028809A1

公开(公告)日：2010-02-04

申请号：US12514777

申请日：2007-11-13

申请人： Anja Monique Vanleenhove ,  Peter Dirksen ,  David Van Steenwinckel ,  Gerben Doornbos ,  Casper Juffermans ,  Mark Van Dal

发明人： Anja Monique Vanleenhove ,  Peter Dirksen ,  David Van Steenwinckel ,  Gerben Doornbos ,  Casper Juffermans ,  Mark Van Dal

IPC分类号： G03F7/20

CPC分类号： G03F7/0035 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/823821 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/785

摘要： A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and/or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spartial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools.

摘要翻译： 在衬底中或衬底上的至少一个器件层中形成图案的方法包括：用第一光致抗蚀剂层涂覆器件层; 使用第一掩模曝光第一光致抗蚀剂; 显影第一光致抗蚀剂层以在基底上形成第一图案; 用保护层涂覆基板; 处理保护层以在其中与第一光致抗蚀剂接触的地方发生变化，使得改变的保护层基本上不受随后的曝光和/或显影步骤的影响; 用第二光致抗蚀剂层涂覆基板; 使用第二掩模曝光所述第二光致抗蚀剂层; 并且显影所述第二光致抗蚀剂层以在所述衬底上形成第二图案，而不会显着影响所述第一光致抗蚀剂层中的所述第一图案，其中所述第一和第二图案一起限定散布特征，其间隔频率大于每个 第一和第二模式分开。 该方法在定义具有较小的特征尺寸的finFET器件的源极，漏极和鳍片特征方面具有特别的用途，而与主要的光刻工具不同。

公开(公告)号：US20080226152A1

公开(公告)日：2008-09-18

申请号：US10598035

申请日：2005-02-08

申请人： Peter Dirksen ,  Augustus Josephus Elizabeth Maria Janssen ,  Josephus Johannes Maria Braat ,  Adriaan Leeuwestein

发明人： Peter Dirksen ,  Augustus Josephus Elizabeth Maria Janssen ,  Josephus Johannes Maria Braat ,  Adriaan Leeuwestein

IPC分类号： G06K9/00

CPC分类号： G03F7/70608 ,  G03F7/706

摘要： The invention relates to a method of determining a parameter relating to image blur in an imaging system (IS) comprising the step of illuminating an object having a test pattern (MTP) by means of the imaging system (IS), thereby forming an image of the test pattern. The test pattern (MTP) has a size smaller than the resolution of the imaging system (IS), which makes the image of the test pattern independent of illuminator aberrations. The test pattern (MTP) is an isolated pattern, which causes the image to be free of optical proximity effects. The image is blurred due to stochastic fluctuations in the imaging system and/or in the detector detecting the blurred image. The parameter relating to the image blur is determined from a parameter relating to the shape of the blurred image. According to the invention, resist diffusion and/or focus noise may be characterized. In the method of designing a mask, the parameter relating to the image blur due to diffusion in the resist is taken into account. The computer program according to the invention is able to execute the step of determining the parameter relating to the image blur from a parameter relating to a shape of the blurred image.

摘要翻译： 本发明涉及一种确定与成像系统（IS）中的图像模糊相关的参数的方法，包括通过成像系统（IS）照亮具有测试图案（MTP）的对象的步骤，从而形成图像 测试模式。 测试图案（MTP）的尺寸小于成像系统（IS）的分辨率，这使得测试图案的图像与照明器像差无关。 测试图案（MTP）是一种孤立的图案，使图像无光学邻近效应。 图像由于成像系统中的随机波动和/或检测模糊图像的检测器而模糊。 根据与模糊图像的形状相关的参数确定与图像模糊有关的参数。 根据本发明，可以表征抗蚀剂扩散和/或聚焦噪声。 在设计掩模的方法中，考虑与抗蚀剂中的扩散引起的图像模糊有关的参数。 根据本发明的计算机程序能够执行从与模糊图像的形状相关的参数确定与图像模糊有关的参数的步骤。

公开(公告)号：US07230674B2

公开(公告)日：2007-06-12

申请号：US11373503

申请日：2006-03-13

申请人： Mark Kroon ,  Michael Cornelis Van Beek ,  Peter Dirksen ,  Ralph Kurt ,  Cassandra May Owen

发明人： Mark Kroon ,  Michael Cornelis Van Beek ,  Peter Dirksen ,  Ralph Kurt ,  Cassandra May Owen

IPC分类号： G03B27/52 ,  G03B27/42 ,  G03B27/72

CPC分类号： G03F7/70983 ,  G03F7/70808 ,  G03F7/70916 ,  G03F7/70933

摘要： A lithographic apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The projection system includes an optical element that has a beam exit area through each of which the patterned beam passes. The apparatus further includes a fluid cleaning system that cleans a fluid to be introduced into a region in between the optical element and the substrate. The fluid cleaning system includes a fluid inlet, a fluid outlet, and a cleaning zone disposed between the inlet and outlet. The cleaning zone includes a nucleated surface provided with a plurality of nucleation sites.

摘要翻译： 光刻设备包括提供辐射束的辐射系统和支撑图案化结构的支撑结构。 图形结构被配置为根据期望的图案对辐射束进行图案化。 该装置还包括支撑基板的基板支撑件和将图案化的光束投影到基板的目标部分上的投影系统。 投影系统包括光学元件，该光学元件具有通过图案化光束通过的每一个的光束出射区域。 该装置还包括清洁被引入到光学元件和基板之间的区域中的流体的流体清洁系统。 流体清洁系统包括流体入口，流体出口和布置在入口和出口之间的清洁区域。 清洁区包括具有多个成核位点的成核表面。

公开(公告)号：US20070064215A1

公开(公告)日：2007-03-22

申请号：US10596647

申请日：2004-12-22

申请人： Peter Dirksen ,  Robert Morton ,  Peter Zandbergen ,  David Van Steelwinckel ,  Yuri Aksenov ,  Jeroen Lammers ,  Johannes Van Wingerden ,  Laurent Marinier

发明人： Peter Dirksen ,  Robert Morton ,  Peter Zandbergen ,  David Van Steelwinckel ,  Yuri Aksenov ,  Jeroen Lammers ,  Johannes Van Wingerden ,  Laurent Marinier

IPC分类号： G03B27/32

CPC分类号： G03F7/70341 ,  G03F7/70983

摘要： A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.

摘要翻译： 一种照射方法来照射浸入流体（L 3）中的抗蚀剂（L 2）等感光层，包括涂敷可移除的透明层（L 4，L 5），通过浸渍流体将辐射投射到抗蚀剂上 并且通过透明层，使得流体中的缺陷如投影在表面上而失焦，并随后去除透明层。 透明层可以帮助将这种缺陷从辐射的焦点远离在表面上，因此可以减少或消除阴影。 因此，照射可以更完整，并且缺陷减少。 对于浸入液体中的小气泡或颗粒形式的缺陷，特别是在流体/表面界面处的缺陷可能特别有效。 辐射可以用于任何目的，包括检查，加工，图案化等。 可以将透明层的去除与显影抗蚀剂层的步骤组合。

公开(公告)号：US20060215140A1

公开(公告)日：2006-09-28

申请号：US10540067

申请日：2003-12-18

申请人： Peter Dirksen ,  Casparus Antonius Juffermans

发明人： Peter Dirksen ,  Casparus Antonius Juffermans

IPC分类号： G03B27/72

CPC分类号： G03F7/706 ,  G03F7/7025 ,  G03F7/7085

摘要： The performance of an illumination system in, for example, a lithographic projection apparatus can be measured accurately and reliably by means of a test object (55) comprising at least one Fresnel zone lens (30) and an associated reference mark, preferably a ring (40). By superposed imaging of these and detecting and evaluating the composed image (56), telecentricity errors and aberrations of the illumination can be measured.

摘要翻译： 可以通过包括至少一个菲涅耳区透镜（30）和相关联的参考标记的测试对象（55）来精确和可靠地测量例如光刻投影设备中的照明系统的性能，优选为环（ 40）。 通过这些的叠加成像和检测和评估合成图像（56），可以测量照明的远心误差和像差。

公开(公告)号：US20060160029A1

公开(公告)日：2006-07-20

申请号：US11367810

申请日：2006-03-01

申请人： Peter Dirksen ,  Casparus Juffermans ,  Johannes Van Wingerden

发明人： Peter Dirksen ,  Casparus Juffermans ,  Johannes Van Wingerden

IPC分类号： G03F7/00

CPC分类号： H01L21/32139 ,  G03F1/26 ,  G03F1/36 ,  G03F7/0035

摘要： For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise “forbidden” structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.

摘要翻译： 为了光刻制造具有非常高密度的器件，通过新的方法将设计掩模图案（120）分布在多个子图案（120a，120b，120c）上。 子图案不包括“禁止”结构（135）并且可以通过常规设备传送到待图案化的基底层。 为了传送，使用新的层叠层，其包括用于每个子图案的一对处理层（22; 26）和无机抗反射层（24; 28）。 在第一处理层（26）已经被图案化为第一子图案之后，其被涂覆有用第二子图案曝光的新抗蚀剂层（30）和在第一子图案下方的第二处理层（22） 用第二子图案处理处理层。

公开(公告)号：US06960764B2

公开(公告)日：2005-11-01

申请号：US10482200

申请日：2002-07-19

申请人： Peter Dirksen ,  Rene Johan Gerrit Elfrink ,  Casparus Anthonius Henricus Juffermans

发明人： Peter Dirksen ,  Rene Johan Gerrit Elfrink ,  Casparus Anthonius Henricus Juffermans

IPC分类号： G01N23/225 ,  H01J37/04 ,  H01J37/21 ,  H01J37/22 ,  H01J37/26 ,  H01J37/28 ,  H01L21/027 ,  H01L21/66 ,  G01N23/00 ,  G21K7/00

CPC分类号： H01J37/28 ,  H01J37/263 ,  H01J2237/2823

摘要： The performance of a scanning electron microscope (SEM) (10) is determined by scanning, with this SEM, porous silicon surface areas (PSF, PSC) each having a different average pore size, calculating the Fourier transform spectra (Fc) of the images of the surface areas and extrapolating the resolution (R) at a zero signal-to-noise ratio (SNR) from the width (W(1/e)), the signal amplitude (Sa) and the noise offset (NL) of the spectra. A test sample provided with the different surface areas is obtained by anodizing a silicon substrate (Su) at a constant electric current, while continuously decreasing the substrate area exposed to the etching electrolyte (El).

摘要翻译： 通过扫描来确定扫描电子显微镜（SEM）（10）的性能，通过扫描，各SEM都具有多孔硅表面积（PS，PSC） 计算表面积的图像的傅立叶变换光谱（F ），并将分辨率（R）从宽度的零信噪比（SNR）外推出来， （W（1 / e）），信号振幅（Sa）和噪声偏移（NL）。 通过以恒定的电流阳极氧化硅衬底（Su），同时连续地减小暴露于蚀刻电解质（E1）的衬底区域，获得具有不同表面积的测试样品。

公开(公告)号：US20050140956A1

公开(公告)日：2005-06-30

申请号：US10748751

申请日：2003-12-31

申请人： Mark Kroon ,  Michael Van Beek ,  Peter Dirksen ,  Ralph Kurt ,  Cassandra Owen

发明人： Mark Kroon ,  Michael Van Beek ,  Peter Dirksen ,  Ralph Kurt ,  Cassandra Owen

IPC分类号： G03F7/20 ,  G03B27/72

CPC分类号： G03F7/70983 ,  G03F7/70808 ,  G03F7/70916 ,  G03F7/70933

摘要： A lithographic apparatus is disclosed. The apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The projection system includes an optical element that has a beam entry area and an optical element that has a beam exit area through each of which the patterned beam passes. The apparatus further includes a nucleated surface that is associated with the projection system on which a plurality of nucleation sites are provided. The surface is disposed away from at least one of the beam entry area and the beam exit area.

摘要翻译： 公开了一种光刻设备。 该装置包括提供辐射束的辐射系统和支撑图形结构的支撑结构。 图形结构被配置为根据期望的图案对辐射束进行图案化。 该装置还包括支撑基板的基板支撑件和将图案化的光束投影到基板的目标部分上的投影系统。 投影系统包括具有光束入射区域的光学元件和具有通过图案化光束通过的每一个的光束出射区域的光学元件。 该装置还包括与投影系统相关联的成核表面，其上设置有多个成核位置。 表面远离光束入射区域和光束出射区域中的至少一个设置。

公开(公告)号：US06544694B2

公开(公告)日：2003-04-08

申请号：US09772485

申请日：2001-01-29

申请人： Peter Dirksen ,  Casparus Anthonius Henricus Juffermans

发明人： Peter Dirksen ,  Casparus Anthonius Henricus Juffermans

IPC分类号： G03F900

CPC分类号： G03F1/26 ,  G03F1/32 ,  G03F1/36

摘要： A method is described for imaging, by means of projection radiation, a phase-shifting mask pattern on a substrate for the purpose of configuring device features in the substrate. By using a mask pattern comprising mask features constituted by a phase transition (22) and two sub-resolution assist features (40,41), arranged symmetrically with respect to the phase transition and having a mutual distance (p), device features having a wide variety of widths can be obtained by varying only the mutual distance.

摘要翻译： 描述了一种用于通过投影辐射成像基板上的相移掩模图案以便配置衬底中的器件特征的方法。 通过使用包括由相变（22）构成的掩模特征的掩模图案和相对于相变对称地具有相互距离（p）的两个子分辨率辅助特征（40,41），装置特征具有 可以通过仅改变相互距离来获得各种各样的宽度。

公开(公告)号：US6046792A

公开(公告)日：2000-04-04

申请号：US812283

申请日：1997-03-06

申请人： Jan E. Van Der Werf ,  Peter Dirksen

发明人： Jan E. Van Der Werf ,  Peter Dirksen

IPC分类号： G01B9/02 ,  G01B11/00 ,  G03F7/20 ,  G03F7/22 ,  H01L21/027 ,  G03B27/42

CPC分类号： G03F7/70358 ,  G01B9/02007 ,  G01B9/02018 ,  G01B9/02019 ,  G01B9/02021 ,  G01B9/02027 ,  G03F7/70716 ,  G03F7/70775 ,  G01B2290/15 ,  G01B2290/70

摘要： A differential interferometer system for measuring the mutual positions and movements of a first object (WH) and a second object (MH). The system comprises a first interferometer unit (1, 2, 3, 4) having a first measuring reflector (RW) and a second interferometer unit (5, 6, 7, 8) having a second measuring reflector (RM). Since a measuring beam (b.sub.m) passes through both the first and the second interferometer unit and is reflected by both the first and the second measuring reflector, and since the measuring beam and the reference beam (b.sub.r) traverse the same path at least between the two interferometer units, accurate measurements can be preformed very rapidly. The interferometer system may be used to great advantage in a step-and-scan-lithographic projection apparatus.

摘要翻译： 一种用于测量第一物体（WH）和第二物体（MH）的相互位置和运动的差分干涉仪系统。 该系统包括具有第一测量反射器（RW）和具有第二测量反射器（RM）的第二干涉仪单元（5,6,7,8）的第一干涉仪单元（1,2,3,4）。 由于测量光束（bm）通过第一和第二干涉仪单元并且被第一和第二测量反射器两者反射，并且由于测量光束和参考光束（br）至少穿过相同的路径 两个干涉仪单元，可以非常快速地进行精确的测量。 干涉仪系统可以在步进和扫描光刻投影设备中被用于很大的优点。