公开(公告)号：US08148052B2

公开(公告)日：2012-04-03

申请号：US12514777

申请日：2007-11-13

申请人： Anja Monique Vanleenhove ,  Peter Dirksen ,  David Van Steenwinckel ,  Gerben Doornbos ,  Casper Juffermans ,  Mark Van Dal

发明人： Anja Monique Vanleenhove ,  Peter Dirksen ,  David Van Steenwinckel ,  Gerben Doornbos ,  Casper Juffermans ,  Mark Van Dal

IPC分类号： G03F7/26

CPC分类号： G03F7/0035 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/823821 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/785

摘要： A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and/or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spatial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools.

摘要翻译： 在衬底中或衬底上的至少一个器件层中形成图案的方法包括：用第一光致抗蚀剂层涂覆器件层; 使用第一掩模曝光第一光致抗蚀剂; 显影第一光致抗蚀剂层以在基底上形成第一图案; 用保护层涂覆基板; 处理保护层以在其中与第一光致抗蚀剂接触的地方发生变化，使得改变的保护层基本上不受随后的曝光和/或显影步骤的影响; 用第二光致抗蚀剂层涂覆基板; 使用第二掩模曝光所述第二光致抗蚀剂层; 并且显影所述第二光致抗蚀剂层以在所述基板上形成第二图案，而不会显着影响所述第一光致抗蚀剂层中的所述第一图案，其中所述第一和第二图案一起限定散布特征，其空间频率大于 第一和第二模式分开。 该方法在定义具有较小的特征尺寸的finFET器件的源极，漏极和鳍片特征方面具有特别的用途，而与主要的光刻工具不同。

公开(公告)号：US20100028809A1

公开(公告)日：2010-02-04

申请号：US12514777

申请日：2007-11-13

申请人： Anja Monique Vanleenhove ,  Peter Dirksen ,  David Van Steenwinckel ,  Gerben Doornbos ,  Casper Juffermans ,  Mark Van Dal

发明人： Anja Monique Vanleenhove ,  Peter Dirksen ,  David Van Steenwinckel ,  Gerben Doornbos ,  Casper Juffermans ,  Mark Van Dal

IPC分类号： G03F7/20

CPC分类号： G03F7/0035 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/823821 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/785

摘要： A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and/or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spartial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools.

摘要翻译： 在衬底中或衬底上的至少一个器件层中形成图案的方法包括：用第一光致抗蚀剂层涂覆器件层; 使用第一掩模曝光第一光致抗蚀剂; 显影第一光致抗蚀剂层以在基底上形成第一图案; 用保护层涂覆基板; 处理保护层以在其中与第一光致抗蚀剂接触的地方发生变化，使得改变的保护层基本上不受随后的曝光和/或显影步骤的影响; 用第二光致抗蚀剂层涂覆基板; 使用第二掩模曝光所述第二光致抗蚀剂层; 并且显影所述第二光致抗蚀剂层以在所述衬底上形成第二图案，而不会显着影响所述第一光致抗蚀剂层中的所述第一图案，其中所述第一和第二图案一起限定散布特征，其间隔频率大于每个 第一和第二模式分开。 该方法在定义具有较小的特征尺寸的finFET器件的源极，漏极和鳍片特征方面具有特别的用途，而与主要的光刻工具不同。

公开(公告)号：US20090311623A1

公开(公告)日：2009-12-17

申请号：US12375945

申请日：2007-07-31

申请人： Hans Kwinten ,  Peter Zanbergen ,  David Van Steenwinckel ,  Anja Monique Vanleenhove

发明人： Hans Kwinten ,  Peter Zanbergen ,  David Van Steenwinckel ,  Anja Monique Vanleenhove

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/38

摘要： The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist (100) on the substrate, performing a first exposure (120) in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment (130) on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation (140). The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.

摘要翻译： 本发明涉及一种光刻方法，包括以下步骤：提供衬底并在衬底上形成光致抗蚀剂层（100），进行第一曝光（120），其中光刻胶层的预定部分被照射通过 具有用于在所述光致抗蚀剂层中形成所述图案的潜像的图案的掩模，在进行所述固定（140）之前对所述光致抗蚀剂层进行预处理（130）以去除所述潜像的预定部分。 该方法提供了一个改进的过程窗口。 本发明还涉及在本发明的方法中使用的光致抗蚀剂。

公开(公告)号：US08067147B2

公开(公告)日：2011-11-29

申请号：US10596647

申请日：2004-12-22

申请人： Peter Dirksen ,  Robert Duncan Morton ,  Peter Zandbergen ,  David Van Steenwinckel ,  Yuri Aksenov ,  Jeroen Herman Lammers ,  Johannes Van Wingerden ,  Laurent Marinier

发明人： Peter Dirksen ,  Robert Duncan Morton ,  Peter Zandbergen ,  David Van Steenwinckel ,  Yuri Aksenov ,  Jeroen Herman Lammers ,  Johannes Van Wingerden ,  Laurent Marinier

IPC分类号： G03F7/00

CPC分类号： G03F7/70341 ,  G03F7/70983

摘要： A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.

摘要翻译： 一种照射方法来照射浸没在流体（L3）中的抗蚀剂（L2）的感光层，包括施加可去除的透明层（L4，L5），通过浸没流体将辐射投射到抗蚀剂上，并通过透明 使得流体中的缺陷如投射在表面上而失焦，随后去除透明层。 透明层可以帮助将这种缺陷从辐射的焦点远离在表面上，因此可以减少或消除阴影。 因此，照射可以更完整，并且缺陷减少。 对于浸入液体中的小气泡或颗粒形式的缺陷，特别是在流体/表面界面处的缺陷可能特别有效。 辐射可以用于任何目的，包括检查，加工，图案化等。 可以将透明层的去除与显影抗蚀剂层的步骤组合。

公开(公告)号：US08679966B2

公开(公告)日：2014-03-25

申请号：US13568695

申请日：2012-08-07

申请人： David Van Steenwinckel ,  Thomas Merelle ,  Franciscus Petrus Widdershoven ,  Viet Hoang Nguyen ,  Dimitri Soccoi ,  Jan Leo Dominique Fransaer

发明人： David Van Steenwinckel ,  Thomas Merelle ,  Franciscus Petrus Widdershoven ,  Viet Hoang Nguyen ,  Dimitri Soccoi ,  Jan Leo Dominique Fransaer

IPC分类号： H01L21/4763

CPC分类号： G01N27/4145 ,  G01N27/3275 ,  H01L29/66

摘要： A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.

摘要翻译： 一种制造生物传感器半导体器件的方法，其中在器件的主表面上的铜电极被改性以形成Au-Cu合金电极。 通过在器件上沉积金层，然后对该器件进行热处理以促进金和电极铜之间的相互扩散来实现这种修改。 从器件的表面去除合金金铜，留下暴露的电极。 与常规铜电极的情况相比，电极与生物传感器装置的进一步处理更好地兼容，并且处理窗口比金盖铜电极宽。 还公开了具有Au-Cu合金电极的生物传感器半导体器件。

公开(公告)号：US08257912B2

公开(公告)日：2012-09-04

申请号：US12375945

申请日：2007-07-31

申请人： Hans Kwinten ,  Peter Zandbergen ,  David Van Steenwinckel ,  Anja Vanleenhove

发明人： Hans Kwinten ,  Peter Zandbergen ,  David Van Steenwinckel ,  Anja Vanleenhove

IPC分类号： G03F7/26

CPC分类号： G03F7/38

摘要： The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist on the substrate, performing a first exposure in which a predetermined part of the layer of photoresist is irradiated through a mask having a pattern for forming a latent image of said pattern in the layer of the photoresist, performing a pretreatment on the layer of the photoresist to remove a predetermined part of the latent image before performing the fixation. The method provides an improved process window. The invention further relates to a photoresist for use within the method of the invention.

摘要翻译： 本发明涉及一种光刻方法，包括以下步骤：提供衬底并在衬底上形成光致抗蚀剂层，进行第一曝光，其中光刻胶层的预定部分通过具有图案的掩模照射 在光致抗蚀剂层中形成所述图案的潜像，在执行定影之前对光致抗蚀剂层进行预处理以去除潜像的预定部分。 该方法提供了一个改进的过程窗口。 本发明还涉及在本发明的方法中使用的光致抗蚀剂。

公开(公告)号：US20110031903A1

公开(公告)日：2011-02-10

申请号：US12863744

申请日：2009-01-27

申请人： Viet Nguyen Hoang ,  Radu Surdeanu ,  Pascal Bracken ,  Benoit Bataillou ,  David Van Steenwinckel

发明人： Viet Nguyen Hoang ,  Radu Surdeanu ,  Pascal Bracken ,  Benoit Bataillou ,  David Van Steenwinckel

IPC分类号： H05B37/02 ,  G01K7/01 ,  G06F15/00

CPC分类号： H05B33/0818 ,  G01K7/01 ,  H05B33/0866 ,  H05B33/089

摘要： A method of estimating the junction temperature of a light emitting diode comprises driving a forward bias current through the diode, the current comprising a square wave which toggles between high and low current values (Ihigh, llow), the high current value (lhigh) comprising an LED operation current, and the low current value (IIOW) comprising a non-zero measurement current. The forward bias voltage drop (Vf) is sampled and the forward bias voltage drop (Vflow) is determined at the measurement current (IIOW)—The temperature is derived from the determined forward bias voltage drop.

摘要翻译： 估计发光二极管的结温的方法包括驱动通过二极管的正向偏置电流，该电流包括在高电流值和低电流值（Ihigh，llow）之间切换的方波，高电流值（lhigh）包括 LED操作电流和包括非零测量电流的低电流值（IIOW）。 正向偏置电压降（Vf）被采样，并且在测量电流（IIOW）下确定正向偏置电压降（Vflow） - 温度来自所确定的正向偏压电压降。

公开(公告)号：US20080241764A1

公开(公告)日：2008-10-02

申请号：US12065926

申请日：2006-09-05

申请人： Peter Zandbergen ,  Jeroen H. Lammers ,  David Van Steenwinckel

发明人： Peter Zandbergen ,  Jeroen H. Lammers ,  David Van Steenwinckel

IPC分类号： G03F7/20

CPC分类号： G03F7/0392

摘要： The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; and exposing the photoresist (18) to actinic radiation through a mask pattern (12). This is followed, in either order, by carrying out a post-exposure bake; and developing the photoresist (18) with a developer to remove a portion of the photoresist which has been exposed to the actinic radiation. The polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and wherein the polymer resin is crosslinked by the action of the quencher during the bake.

摘要翻译： 本发明提供了一种平版印刷图案化方法，以便图案化光致抗蚀剂的强度。 该方法包括：向待图案化的表面施加包含聚合物树脂的光致抗蚀剂（18），在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 以及通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射。 接下来，按照任何顺序，通过进行曝光后烘烤; 以及用显影剂显影光致抗蚀剂（18）以去除已经暴露于光化辐射的光致抗蚀剂的一部分。 聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并通过催化剂的作用使其溶解在显影剂中，并且其中聚合物树脂在烘烤期间通过猝灭剂的作用而交联。

公开(公告)号：US09386655B2

公开(公告)日：2016-07-05

申请号：US12994650

申请日：2009-05-21

申请人： Viet Nguyen Hoang ,  Radu Surdeanu ,  Pascal Bancken ,  Benoit Bataillou ,  David Van Steenwinckel

发明人： Viet Nguyen Hoang ,  Radu Surdeanu ,  Pascal Bancken ,  Benoit Bataillou ,  David Van Steenwinckel

IPC分类号： H01L29/49 ,  H05B33/08 ,  G01J1/02 ,  G01J1/04 ,  G01J1/32 ,  G01J1/42

CPC分类号： H05B33/0869 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/04 ,  G01J1/0407 ,  G01J1/0425 ,  G01J1/32 ,  G01J2001/4247 ,  H05B33/0821

摘要： A light sensor device comprises a substrate (10) having a well (12) defined in one surface. At least one light sensor (14) is formed at the base of the well (12), and an optical light guide (18) in the form of a transparent tunnel (18) within an opaque body (20) extends from a top surface of the device down a sloped side wall of the well (12) to the location of the light sensor (14).

摘要翻译： 光传感器装置包括具有在一个表面中限定的阱（12）的衬底（10）。 至少一个光传感器（14）形成在井（12）的基部处，并且在不透明体（20）内的透明隧道（18）形式的光导（18）从顶表面 （12）的倾斜的侧壁上的装置到光传感器（14）的位置。

公开(公告)号：US08896317B2

公开(公告)日：2014-11-25

申请号：US12867218

申请日：2009-02-09

申请人： Radu Surdeanu ,  Viet Nguyen Hoang ,  Benoit Bataillou ,  Pascal Bancken ,  David Van Steenwinckel

发明人： Radu Surdeanu ,  Viet Nguyen Hoang ,  Benoit Bataillou ,  Pascal Bancken ,  David Van Steenwinckel

IPC分类号： G01R31/02 ,  H05B33/08

CPC分类号： H05B33/0866

摘要： A method of determining the dominant output wavelength of an LED, includes determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analyzing the characteristic to determine the dominant output wavelength.

摘要翻译： 确定LED的主要输出波长的方法包括确定取决于电压 - 电容特性的LED的电特性，以及分析该特性以确定主要输出波长。