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    Substrate removal as a function of acoustic analysis
    43.
    发明授权
    Substrate removal as a function of acoustic analysis 失效
    底物去除作为声学分析的一个功能

    公开(公告)号：US06277656B1

    公开(公告)日：2001-08-21

    申请号：US09410145

    申请日：1999-09-30

    申请人： Rama R. Goruganthu ,  Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring

    发明人： Rama R. Goruganthu ,  Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring

    IPC分类号： H01L2100

    CPC分类号： H01L22/26 ,  B23K26/03 ,  H01L21/67092 ,  H01L21/76898

    摘要： A substrate removal approach involves sensing acoustic energy in an integrated circuit as a function of substrate in the integrated circuit being removed. According to an example embodiment of the present invention, a method for substrate removal includes removing a portion of substrate from the back side of a semiconductor chip circuitry near a circuit side and opposite the back side. The substrate is removed as a function of detected acoustic energy propagating through the device. The detected acoustic energy can be correlated to a parameter and used for controlling the substrate removal process, improving the ability to efficiently and accurately test semiconductor devices.

    摘要翻译： 衬底去除方法包括在集成电路中检测作为去除的集成电路中的衬底的函数的集成电路中的声能。 根据本发明的一个示例性实施例，一种用于基板去除的方法包括从半导体芯片电路的靠近电路侧并与背面相反的背面去除基板的一部分。 作为通过装置传播的检测到的声能的函数去除衬底。 检测到的声能可以与参数相关，并用于控制衬底移除过程，提高了有效和准确地测试半导体器件的能力。

    Substrate removal from a semiconductor chip structure having buried insulator (BIN)
    44.
    发明授权
    Substrate removal from a semiconductor chip structure having buried insulator (BIN) 失效
    从具有掩埋绝缘体（BIN）的半导体芯片结构中去除衬底

    公开(公告)号：US06252239B1

    公开(公告)日：2001-06-26

    申请号：US09584818

    申请日：2000-05-31

    申请人： Rama R. Goruganthu ,  Richard Blish, II

    发明人： Rama R. Goruganthu ,  Richard Blish, II

    IPC分类号： G01N2186

    CPC分类号： G01R31/2851 ,  G01R31/2898 ,  G01R31/311

    摘要： The present invention is directed to semiconductor chip analysis involving evaluation of a thickness of material in the chip, for example, as the chip is being thinned. According to an example embodiment of the present invention, a semiconductor die having a buried insulator (BIN) layer between a circuit side that is opposite a back side is analyzed. Light is directed at a selected area at the back side that is over a portion of material that has been reduced in thickness relative to the thickness of an unaltered die. The light has sufficient intensity to pass through the BIN layer and sufficient photon energy to cause the generation of electron-hole pairs in the die on the side of the BIN layer opposite the back side of the die. The electron-hole pairs generate an electrical output from the semiconductor die that is monitored and used to evaluate the thickness of the material.

    摘要翻译： 本发明涉及包括评估芯片中的材料厚度的半导体芯片分析，例如，当芯片变薄时。 根据本发明的一个示例性实施例，分析了在与背面相对的电路侧之间具有掩埋绝缘体（BIN）层的半导体管芯。 光线指向位于相对于未改变的模具的厚度已经减小厚度的材料的一部分的后侧的选定区域。 该光具有足够的强度以通过BIN层和足够的光子能量，从而在与阴模背面相对的BIN层一侧的模具中产生电子 - 空穴对。 电子 - 空穴对产生来自半导体管芯的电输出，该电输出被监测并用于评估材料的厚度。

    Led in substrate with back side monitoring
    45.
    发明授权
    Led in substrate with back side monitoring 失效
    带背面监测基板

    公开(公告)号：US06248600B1

    公开(公告)日：2001-06-19

    申请号：US09409976

    申请日：1999-09-30

    申请人： Michael R. Bruce ,  Jeffrey D. Birdsley ,  Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis

    发明人： Michael R. Bruce ,  Jeffrey D. Birdsley ,  Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis

    IPC分类号： H01L2100

    CPC分类号： H01L21/306

    摘要： Post-manufacturing analysis of a semiconductor device is enhanced via a method that uses a light emitting diode (LED) formed in a semiconductor die. According to an example embodiment of the present invention, a LED is formed within a semiconductor die having a circuit side opposite a back side. The LED is activated and generates radiation. Substrate is removed from the device, and the amount of radiation that passes through the substrate is detected. The amount of radiation that passes through the die is a function of the absorption characteristics of the die and the substrate thickness. By detecting the radiation and using the absorption characteristics of the die, the amount of substrate remaining in the back side of the die is determined and the substrate removal process is controlled therefrom.

    摘要翻译： 通过使用形成在半导体管芯中的发光二极管（LED）的方法来增强半导体器件的制造后分析。 根据本发明的示例性实施例，在具有与背面相对的电路侧的半导体管芯内形成LED。 LED被激活并产生辐射。 从器件中去除衬底，并检测穿过衬底的辐射量。 通过模具的辐射量是模具的吸收特性和基板厚度的函数。 通过检测辐射并使用模具的吸收特性，确定保留在模具背面的基板的量，并从中控制基板去除过程。

    Endpoint detection for thinning of silicon of a flip chip bonded integrated circuit
    46.
    发明授权
    Endpoint detection for thinning of silicon of a flip chip bonded integrated circuit 失效
    端点检测用于减薄倒装芯片接合集成电路的硅

    公开(公告)号：US6069366A

    公开(公告)日：2000-05-30

    申请号：US50531

    申请日：1998-03-30

    申请人： Rama R. Goruganthu ,  Victoria J. Bruce ,  Glen Gilfeather

    发明人： Rama R. Goruganthu ,  Victoria J. Bruce ,  Glen Gilfeather

    IPC分类号： G01R31/28 ,  G01R31/311 ,  G01N21/86

    CPC分类号： G01R31/2898 ,  G01R31/2851 ,  G01R31/311

    摘要： A system for determining the endpoint associated with removing silicon from the backside of a flip chip type die includes a tool for removing silicon and a light source for directing light to the backside of the die. An electrical measuring apparatus, such as a voltmeter, ammeter or oscilloscope, is attached across the output pins of a package to which the die is attached. The light or ions directed toward the backside of the die induce a current in the devices formed in the semiconductor. The value of the current or voltage output depends on the thickness of material between the endpoint on the backside of the die and the devices in the epitaxial layer of the die. The induced signal can be monitored to determine the thickness. Silicon can be removed globally until the thickness is reasonable such that a local thinning tool can be used to remove silicon to get to the area of interest in a reasonable amount of time. The induced current can be monitored during local thinning. A viewing mechanism such as infrared microscopy can be used to locate the specific device or devices of interest in the epitaxial layer of the die. The viewing mechanism is also used to determine where localized thinning will occur.

    摘要翻译： 用于确定与从倒装芯片型芯片的背面移除硅相关联的端点的系统包括用于去除硅的工具和用于将光引导到裸片的背面的光源。 诸如电压表，电流表或示波器的电气测量装置被安装在与芯片连接的封装的输出引脚上。 指向芯片背面的光或离子在半导体中形成的器件中引起电流。 电流或电压输出的值取决于管芯背面端点与管芯外延层器件之间的材料厚度。 可以监测感应信号以确定厚度。 可以全局去除硅，直到厚度合理，使得可以使用局部稀化工具在合理的时间量内去除硅以达到感兴趣的区域。 在局部变薄期间可以监测感应电流。 可以使用诸如红外显微镜的观察机构在模具的外延层中定位感兴趣的特定器件或器件。 观察机制也用于确定发生局部变薄的位置。

    Bonding metal electrical members with a frequency doubled pulsed laser beam
    48.
    发明授权
    Bonding metal electrical members with a frequency doubled pulsed laser beam 失效
    用双倍脉冲激光束接合金属电气部件

    公开(公告)号：US5083007A

    公开(公告)日：1992-01-21

    申请号：US561555

    申请日：1990-08-01

    申请人： Philip J. Spletter ,  Rama R. Goruganthu

    发明人： Philip J. Spletter ,  Rama R. Goruganthu

    IPC分类号： B23K26/06 ,  B23K26/067 ,  B23K26/32 ,  H01S3/093 ,  H01S3/109

    CPC分类号： H01S3/109 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/067 ,  H01S3/0931 ,  H01S3/2383

    摘要： Metal electrical members bonded by coupling to at least one member a frequency doubled pulsed Nd:YAG laser comprising 533 and 1064 nm wavelengths is described. Frequency doubling is accomplished by directing a 1064 nm wavelength pulsed Nd:YAG laser at an intracavity nonlinear crystal such as potassium titanyl phosphate between a highly reflective mirror and a partially reflective mirror to produce frequency doubling. An infrared reflector outside the cavity can reduce the 1064 nm wavelength thereby increasing the percentage of 533 nm wavelength. Alternatively the laser beam can be split and the separate wavelengths directed to separate attenuators to allow the percentage of both 533 nm and 1064 nm wavelengths to be adjusted. A gold bump on an integrated circuit can be bonded to a gold plated copper TAB tape lead.

    摘要翻译： 描述了通过耦合到至少一个构件的包含533和1064nm波长的倍频脉冲Nd：YAG激光器的金属电气构件。 通过将1064nm波长脉冲的Nd：YAG激光器引导在腔内非线性晶体（例如磷酸氢氧化钾）之间，在高反射镜和部分反射镜之间，以产生倍频来实现倍频。 在腔外的红外反射器可以减少1064nm波长，从而增加波长为533nm的百分比。 或者，激光束可以被分离，并且分离的波长被引导到分离的衰减器以允许调整533nm和1064nm波长的百分比。 集成电路上的金凸块可以焊接到镀金铜TAB带引线上。

    Solid immersion lens lithography
    49.
    发明授权
    Solid immersion lens lithography 有权
    固体浸没透镜光刻

    公开(公告)号：US08187772B2

    公开(公告)日：2012-05-29

    申请号：US10961347

    申请日：2004-10-08

    申请人： Rama R. Goruganthu ,  Michael R. Bruce

    发明人： Rama R. Goruganthu ,  Michael R. Bruce

    IPC分类号： G03F1/00 ,  G02B13/18

    CPC分类号： B82Y10/00 ,  G03F7/70325

    摘要： Lithography using solid immersion lenses is disclosed. In one aspect, an apparatus is provided that includes a resist film that has a first side and a second and opposite side. One or more solid immersion lenses are positioned over the first side of the resist film. In another aspect, a method of manufacturing is provided that includes forming a resist film and exposing the resist film with radiation transmitted through one or more solid immersion lenses.

    摘要翻译： 公开了使用固体浸没透镜的平版印刷术。 一方面，提供一种装置，其包括具有第一侧和第二相对侧的抗蚀剂膜。 一个或多个固体浸没透镜位于抗蚀剂膜的第一侧上。 在另一方面，提供了一种制造方法，其包括形成抗蚀剂膜并通过透射通过一个或多个固体浸没透镜的辐射曝光抗蚀剂膜。

    Silicon Photon Detector
    50.
    发明申请
    Silicon Photon Detector 有权
    硅光子检测器

    公开(公告)号：US20110037107A1

    公开(公告)日：2011-02-17

    申请号：US12539821

    申请日：2009-08-12

    申请人： Ronald M. Potok ,  Rama R. Goruganthu ,  Michael R. Bruce

    发明人： Ronald M. Potok ,  Rama R. Goruganthu ,  Michael R. Bruce

    IPC分类号： H01L31/101 ,  H01L31/18

    CPC分类号： H01L31/113

    摘要： A silicon photon detector device and methodology are provided for detecting incident photons in a partially depleted floating body SOI field-effect transistor (310) which traps charges created by visible and mid infrared light in a floating body region (304) when the silicon photon detector is configured in a detect mode, and then measures or reads the resulting enhanced drain current with a current detector in a read mode.

    摘要翻译： 提供硅光子检测器装置和方法，用于在部分耗尽的浮体SOI场效应晶体管（310）中检测入射光子，该场效应晶体管（310）在硅光子检测器（310）捕获由浮动体区域（304）中的可见光和中红外光产生的电荷 被配置在检测模式中，然后在读取模式下用电流检测器测量或读取所得到的增强的漏极电流。