公开(公告)号：US20100193805A1

公开(公告)日：2010-08-05

申请号：US12648706

申请日：2009-12-29

申请人： Naoki JOGAN ,  Yuji Masui ,  Rintaro Koda ,  Takahiro Arakida

发明人： Naoki JOGAN ,  Yuji Masui ,  Rintaro Koda ,  Takahiro Arakida

IPC分类号： H01L33/00 ,  H01L31/02

CPC分类号： H01S5/0264 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/18311

摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; and an insulating oxidized layer disposed between the semiconductor light-emitting element and the semiconductor light-detecting element.

摘要翻译： 半导体发光器件包括具有第一多层反射器，具有发光区域的有源层和按照所述顺序的第二多层反射器的半导体发光元件; 相对于所述半导体发光元件与所述第一多层反射体相对设置并且包括被配置为吸收从所述发光区域发射的光的光吸收层的半导体光检测元件; 以及设置在半导体发光元件和半导体光检测元件之间的绝缘氧化层。

公开(公告)号：US20090194837A1

公开(公告)日：2009-08-06

申请号：US12362066

申请日：2009-01-29

申请人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

发明人： Yoshinori Yamauchi ,  Takahiro Arakida ,  Rintaro Koda ,  Norihiko Yamaguchi ,  Yuji Masui ,  Tomoyuki Oki

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/1055 ,  G02B6/42 ,  G02B6/4206 ,  G02B6/4246

摘要： The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.

摘要翻译： 本发明提供一种半导体光接收元件，其能够在最小化载体的行进时间的增加的同时降低容量。 半导体光接收元件包括具有第一导电类型层，光吸收层和具有光入射面的第二导电类型层的半导体堆叠结构。 半导体光接收元件在光吸收层中或第一导电型层与光吸收层之间具有包括非氧化区域和层叠面内方向的氧化区域的氧化层。

公开(公告)号：US08450752B2

公开(公告)日：2013-05-28

申请号：US12929515

申请日：2011-01-31

申请人： Rintaro Koda ,  Takahiro Arakida ,  Yuji Masui ,  Tomoyuki Oki

发明人： Rintaro Koda ,  Takahiro Arakida ,  Yuji Masui ,  Tomoyuki Oki

IPC分类号： H01L31/12

CPC分类号： H01S5/0262 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18375

摘要： The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

公开(公告)号：US08085827B2

公开(公告)日：2011-12-27

申请号：US12379824

申请日：2009-03-03

申请人： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

发明人： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/2086

摘要： A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.

摘要翻译： 提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。 台面的底部扩展到较低DBR层的顶面。 基部是露出多层的端面的非平坦面。 由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态 裸露。 包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

公开(公告)号：US20110176570A1

公开(公告)日：2011-07-21

申请号：US13064337

申请日：2011-03-21

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

IPC分类号： H01S5/20

CPC分类号： H01S5/1833 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18322 ,  H01S5/18325 ,  H01S5/18383 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/4087

摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

公开(公告)号：US20110122910A1

公开(公告)日：2011-05-26

申请号：US12929515

申请日：2011-01-31

申请人： Rintaro Koda ,  Takahiro Arakida ,  Yuji Masui ,  Tomoyuki Oki

发明人： Rintaro Koda ,  Takahiro Arakida ,  Yuji Masui ,  Tomoyuki Oki

IPC分类号： H01S5/026 ,  H01S5/323

CPC分类号： H01S5/0262 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18375

摘要： The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

摘要翻译： 本发明提供一种半导体装置，其能够实现在使元件彼此粘合时减少诸如裂纹的缺陷的发生。 半导体器件包括彼此粘附的第一元件和第二元件。 第一元件和第二元件中的至少一个元件在面向第一元件和第二元件中的另一元件的一侧具有压力松弛层，并且压力松弛层包括具有突起/凹部的半导体部件，该突起/凹部包括朝向另一元件突出的突起 以及填充在突起/凹部中的凹部中的树脂部件。

公开(公告)号：US20100285625A1

公开(公告)日：2010-11-11

申请号：US12841812

申请日：2010-07-22

申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

IPC分类号： H01L33/00

CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

摘要： A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

摘要翻译： 一种制造发光元件组件的方法，包括：具有形成在所述凹部的所述第一表面和所述内表面上的第一表面，面向所述第一表面的第二表面，凹陷部分和导电材料层的支撑基板， 和发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

公开(公告)号：US07791085B2

公开(公告)日：2010-09-07

申请号：US11604514

申请日：2006-11-27

申请人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Yuji Masui

发明人： Rintaro Koda ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Yuji Masui

IPC分类号： H01L29/161

CPC分类号： H01L31/173 ,  H01L31/022408

摘要： Disclosed herein is a semiconductor light emitting apparatus that includes: a semiconductor light emitting device having a first semiconductor laminate structure including a light emitting region, and a light outgoing window permitting the light emitted from the light emitting region to go out therethrough in the lamination direction; a light transmitting part provided in a region corresponding to the light emitting region; a metal part provided in a region, corresponding to an outer peripheral region of the light emitting region, of the first semiconductor laminate structure; and a semiconductor light detector having a second semiconductor laminate structure including a light absorbing layer for absorbing a part of the light incident from the lamination direction. In the apparatus, the semiconductor light emitting device, a layer including the light transmitting part and the metal part, and the semiconductor light detector are integrally formed in the state of being laminated in this order.

摘要翻译： 这里公开了一种半导体发光装置，其包括：半导体发光器件，其具有包括发光区域的第一半导体层叠结构和允许从发光区域发射的光在层叠方向上通过其出射的光出射窗 ; 光发射部，设置在与所述发光区域对应的区域中; 设置在所述第一半导体层叠结构体的与所述发光区域的外周区域对应的区域中的金属部件; 以及具有第二半导体层叠结构的半导体光检测器，该第二半导体叠层结构包括用于吸收从层叠方向入射的一部分光的光吸收层。 在该装置中，半导体发光器件，包括透光部分和金属部分的层以及半导体光检测器以按顺序层叠的方式一体地形成。

公开(公告)号：US20100200868A1

公开(公告)日：2010-08-12

申请号：US12657809

申请日：2010-01-28

申请人： Yuji Masui ,  Rintaro Koda ,  Osamu Maeda ,  Takahiro Arakida ,  Terukazu Naruse ,  Naoki Jogan

发明人： Yuji Masui ,  Rintaro Koda ,  Osamu Maeda ,  Takahiro Arakida ,  Terukazu Naruse ,  Naoki Jogan

IPC分类号： H01L33/00

CPC分类号： H01S5/0264

摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; a transparent substrate disposed between the semiconductor light-emitting element and the semiconductor light-detecting element; a first metal layer having a first opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-emitting element and the substrate; and a second metal layer having a second opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-detecting element and the substrate.

摘要翻译： 半导体发光器件包括具有第一多层反射器，具有发光区域的有源层和按照所述顺序的第二多层反射器的半导体发光元件; 相对于所述半导体发光元件与所述第一多层反射体相对设置并且包括被配置为吸收从所述发光区域发射的光的光吸收层的半导体光检测元件; 设置在所述半导体发光元件和所述半导体光检测元件之间的透明基板; 第一金属层，其在包括与所述发光区域相对的区域的区域中具有第一开口，并且接合所述半导体发光元件和所述基板; 以及第二金属层，其在包括与发光区域相对的区域的区域中具有第二开口，并且接合半导体光检测元件和基板。

公开(公告)号：US20100046565A1

公开(公告)日：2010-02-25

申请号：US12458962

申请日：2009-07-28

申请人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

IPC分类号： H01S5/183 ,  H01S5/028

CPC分类号： H01S5/18336 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18358 ,  H01S2301/166

摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.

摘要翻译： 垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从 并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和 第二多层反射镜，或第二多层反射镜。 在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。