SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20230062456A1

    公开(公告)日:2023-03-02

    申请号:US17982164

    申请日:2022-11-07

    摘要: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

    DISPLAY DEVICE
    50.
    发明申请

    公开(公告)号:US20220149017A1

    公开(公告)日:2022-05-12

    申请号:US17582854

    申请日:2022-01-24

    IPC分类号: H01L25/075 H01L33/60

    摘要: Provided is a display device including a substrate, a transfer guiding mold provided on the substrate and including a plurality of openings, and a plurality of micro light emitting diodes (LEDs) provided on the substrate in the plurality of openings, wherein a height of the transfer guiding mold is less than twice a height of each of the plurality of micro LEDs.