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    Sequential circuit and semiconductor device
    42.
    发明授权
    Sequential circuit and semiconductor device 有权
    顺序电路和半导体器件

    公开(公告)号：US09494830B2

    公开(公告)日：2016-11-15

    申请号：US14290263

    申请日：2014-05-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Kouhei Toyotaka ,  Masahiko Hayakawa ,  Daisuke Matsubayashi ,  Shinpei Matsuda

    IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

    CPC classification number: G02F1/134309 ,  G02F1/133345 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

    Abstract: The following semiconductor device provides high reliability and a narrower frame width. The semiconductor device includes a driver circuit and a pixel portion. The driver circuit has a first transistor including a first gate and a second gate electrically connected to each other with a semiconductor film sandwiched therebetween, and a second transistor electrically connected to the first transistor. The pixel portion includes a third transistor, a liquid crystal element, and a capacitor. The liquid crystal element includes a first transparent conductive film electrically connected to the third transistor, a second conductive film, and a liquid crystal layer. The capacitor includes the first conductive film, a third transparent conductive film, and a nitride insulating film. The nitride insulating film is positioned between the first transparent conductive film and the third transparent conductive film, and positioned between the semiconductor film and the second gate of the first transistor.

    Abstract translation: 以下半导体器件提供高可靠性和较窄的帧宽度。 半导体器件包括驱动电路和像素部分。 驱动电路具有包括第一栅极和第二栅极的第一晶体管，其中夹在其间的半导体膜彼此电连接，第二晶体管与第一晶体管电连接。 像素部分包括第三晶体管，液晶元件和电容器。 液晶元件包括与第三晶体管电连接的第一透明导电膜，第二导电膜和液晶层。 电容器包括第一导电膜，第三透明导电膜和氮化物绝缘膜。 氮化物绝缘膜位于第一透明导电膜和第三透明导电膜之间，位于第一晶体管的半导体膜和第二栅极之间。

    Semiconductor device
    43.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09287410B2

    公开(公告)日：2016-03-15

    申请号：US14571993

    申请日：2014-12-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shinya Sasagawa ,  Motomu Kurata ,  Kazuya Hanaoka ,  Yoshiyuki Kobayashi ,  Daisuke Matsubayashi

    IPC: H01L27/04 ,  H01L29/786 ,  H01L29/04

    CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/24 ,  H01L29/7869

    Abstract: A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a source electrode layer and a drain electrode layer electrically connected to the semiconductor layer, a gate insulating film over the semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer overlapping with part of the semiconductor layer, part of the source electrode layer, and part of the drain electrode layer with the gate insulating film therebetween. A cross section of the semiconductor layer in the channel width direction is substantially triangular or substantially trapezoidal. The effective channel width is shorter than that for a rectangular cross section.

    Abstract translation: 提供了具有良好电气特性的半导体器件。 半导体器件包括绝缘层，绝缘层上的半导体层，与半导体层电连接的源极电极层和漏极电极层，半导体层上的栅极绝缘膜，源极电极层和漏极电极 以及与半导体层的一部分，源极电极层的一部分以及其间具有栅极绝缘膜的漏极电极层的一部分重叠的栅极电极层。 半导体层在沟道宽度方向上的截面基本上是三角形或大致梯形。 有效通道宽度短于矩形截面的宽度。

    Thin film transistor for integrated circuit
    44.
    发明授权
    Thin film transistor for integrated circuit 有权
    用于集成电路的薄膜晶体管

    公开(公告)号：US09281409B2

    公开(公告)日：2016-03-08

    申请号：US14330444

    申请日：2014-07-14

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Daisuke Matsubayashi ,  Yoshiyuki Kobayashi

    IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12

    CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L29/0684 ,  H01L29/42384 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A semiconductor device is provided with a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a third oxide semiconductor film in contact with a top surface of the insulating surface, a side surface of the first oxide semiconductor film, and side and top surfaces of the second oxide semiconductor film; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with the gate insulating film and faces the top and side surfaces a of the second oxide semiconductor film. A thickness of the first oxide semiconductor film is larger than a sum of a thickness of the third oxide semiconductor film and a thickness of the gate insulating film, and the difference is larger than or equal to 20 nm.

    Abstract translation: 半导体器件在绝缘表面上设置有第一氧化物半导体膜; 第一氧化物半导体膜上的第二氧化物半导体膜; 与所述绝缘表面的顶表面接触的第三氧化物半导体膜，所述第一氧化物半导体膜的侧表面以及所述第二氧化物半导体膜的侧表面和顶表面; 第三氧化物半导体膜上的栅极绝缘膜; 以及与栅极绝缘膜接触并与第二氧化物半导体膜的顶表面和侧表面a相对的栅电极。 第一氧化物半导体膜的厚度大于第三氧化物半导体膜的厚度与栅极绝缘膜的厚度的和，并且该差值大于或等于20nm。

    SEMICONDUCTOR DEVICE
    45.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150001532A1

    公开(公告)日：2015-01-01

    申请号：US14313008

    申请日：2014-06-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Yoshiyuki Kobayashi ,  Daisuke Matsubayashi ,  Akihisa Shimomura ,  Daigo Ito

    IPC: H01L29/78 ,  H01L29/24 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

    Abstract: To provide a semiconductor device in which a large current can flow. To provide a semiconductor device which can be driven stably at a high driving voltage. The semiconductor device includes a semiconductor layer, a first electrode and a second electrode electrically connected to the semiconductor layer and apart from each other in a region overlapping with the semiconductor layer, a first gate electrode and a second gate electrode with the semiconductor layer therebetween, a first gate insulating layer between the semiconductor layer and the first gate electrode, and a second gate insulating layer between the semiconductor layer and the second gate electrode. The first gate electrode overlaps with part of the first electrode, the semiconductor layer, and part of the second electrode. The second gate electrode overlaps with the semiconductor layer and part of the first electrode, and does not overlap with the second electrode.

    Abstract translation: 提供可以流过大电流的半导体器件。 提供可在高驱动电压下稳定驱动的半导体器件。 半导体器件包括半导体层，第一电极和与半导体层电连接并且在与半导体层重叠的区域中彼此分开的第二电极，第一栅电极和第二栅电极，其间具有半导体层， 在所述半导体层和所述第一栅电极之间的第一栅极绝缘层，以及在所述半导体层和所述第二栅电极之间的第二栅极绝缘层。 第一栅电极与第一电极，半导体层和第二电极的一部分重叠。 第二栅电极与半导体层和第一电极的一部分重叠，并且不与第二电极重叠。

    SEMICONDUCTOR DEVICE
    47.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140034954A1

    公开(公告)日：2014-02-06

    申请号：US13957819

    申请日：2013-08-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama ,  Daisuke Matsubayashi ,  Keisuke Murayama

    IPC: H01L27/12

    CPC classification number: H01L27/1255 ,  G02F1/1339 ,  G02F1/134363 ,  G02F1/13454 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3265 ,  H01L29/7869

    Abstract: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.

    Abstract translation: 提供一种包括电容器的半导体器件，其电容量增加而不降低开口率。 半导体器件包括：晶体管，包括透光半导体膜，电容器，其中电介质膜设置在一对电极之间;绝缘膜设置在透光半导体膜上;以及透光导电膜， 绝缘膜。 在电容器中，与晶体管中的透光性半导体膜相同的表面上形成至少含有铟（In）或锌（Zn）的金属氧化物膜作为一个电极，透光性导电膜作为 设置在透光半导体膜上的绝缘膜用作电介质膜。

    Semiconductor device and method for manufacturing the same
    50.
    发明授权
    Semiconductor device and method for manufacturing the same 有权

    公开(公告)号：US10749015B2

    公开(公告)日：2020-08-18

    申请号：US16429176

    申请日：2019-06-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Junichi Koezuka ,  Yukinori Shima ,  Hajime Tokunaga ,  Toshinari Sasaki ,  Keisuke Murayama ,  Daisuke Matsubayashi

    IPC: H01L29/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/786 ,  H01L27/12

    Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

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