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    Wafer level light-emitting diode array and method for manufacturing same
    43.
    发明授权
    Wafer level light-emitting diode array and method for manufacturing same 有权
    晶圆级发光二极管阵列及其制造方法

    公开(公告)号：US09318530B2

    公开(公告)日：2016-04-19

    申请号：US14420175

    申请日：2013-08-06

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Hyun A Kim

    IPC: H01L27/15 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/40 ,  H01L33/46 ,  H01L33/62

    CPC classification number: H01L27/156 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

    Abstract: Disclosed are a light emitting diode array on a wafer level and a method of forming the same. The light emitting diode array includes a growth substrate; a plurality of light emitting diodes arranged on the substrate, wherein each of the plurality of light emitting diodes has a first semiconductor layer, an active layer and a second semiconductor layer; and a plurality of upper electrodes arranged on the plurality of light emitting diodes and formed of an identical material, wherein each of the plurality of upper electrodes is electrically connected to the first semiconductor layer of a respective one of the light emitting diodes. At least one of the upper electrodes is electrically connected to the second semiconductor layer of an adjacent one of the light emitting diodes, and another of the upper electrodes is insulated from the second semiconductor layer of an adjacent one of the light emitting diodes. Accordingly, it is possible to provide a light emitting diode array that can be driven under at a high voltage and simplify a forming process thereof.

    Abstract translation: 公开了一种晶圆级的发光二极管阵列及其形成方法。 发光二极管阵列包括生长衬底; 布置在所述基板上的多个发光二极管，其中所述多个发光二极管中的每一个具有第一半导体层，有源层和第二半导体层; 以及多个上电极，其布置在所述多个发光二极管上并由相同的材料形成，其中所述多个上电极中的每一个电连接到所述发光二极管中的相应一个的所述第一半导体层。 上部电极中的至少一个电连接到相邻的一个发光二极管的第二半导体层，另一个上部电极与相邻发光二极管的第二半导体层绝缘。 因此，可以提供可以在高电压下驱动的发光二极管阵列并简化其形成过程。

    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
    44.
    发明申请
    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME 有权
    发光二极管，其制造方法和具有该发光二极管的LED模块

    公开(公告)号：US20150380620A1

    公开(公告)日：2015-12-31

    申请号：US14848232

    申请日：2015-09-08

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Min Woo Kang ,  Hyun A Kim

    IPC: H01L33/62 ,  H01L33/00 ,  H01L33/40

    CPC classification number: H01L33/14 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

    Abstract: Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode.

    Abstract translation: 公开了一种发光二极管（LED），包括其的LED模块及其制造方法。 发光二极管包括第一导电型半导体层; 第二导电型半导体层; 插入在所述第一导电型半导体层和所述第二导电型半导体层之间的有源层; 电连接到第一导电型半导体层的第一电极焊盘区; 电连接到第二导电型半导体层的第二电极焊盘区域; 以及形成在电连接到第一电极焊盘区域的第一前端与电连接到第二电极焊盘区域的第二前端之间形成的火花隙。 火花隙可以实现发光二极管的静电放电保护。

    Light emitting diode
    45.
    发明授权
    Light emitting diode 有权

    公开(公告)号：US12015112B2

    公开(公告)日：2024-06-18

    申请号：US17389025

    申请日：2021-07-29

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jae Kwon Kim ,  Min Chan Heo ,  Kyoung Wan Kim ,  Jong Kyu Kim ,  Hyun A Kim ,  Joon Sup Lee

    IPC: H01L33/62 ,  H01L27/15 ,  H01L33/10 ,  H01L33/46

    CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/10 ,  H01L33/46

    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

    Wafer level light-emitting diode array
    46.
    发明授权
    Wafer level light-emitting diode array 有权

    公开(公告)号：US11587972B2

    公开(公告)日：2023-02-21

    申请号：US17492729

    申请日：2021-10-04

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A Kim ,  Won Young Roh ,  Min Woo Kang

    IPC: H01L27/15 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44 ,  H01L33/20

    Abstract: A light emitting device including a substrate, first and second light emitting diodes (LEDs) each including first and second semiconductor layers, a first upper electrode disposed on the second LED, electrically connected to the first LED, and insulated from the second semiconductor layer of the first LED, and a second upper electrode disposed on the second LED, electrically connected to the second LED, and insulated from the second semiconductor layer of the second LED, in which a portion of the substrate between the LEDs does not overlap the semiconductor layers, the first upper electrode has a portion electrically connected to the second semiconductor layer of the second LED and covering the first portion and portions of the LEDs, and the second upper electrode has a groove partially enclosing the portion of the first upper electrode in a plan view.

    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY
    47.
    发明申请
    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY 有权

    公开(公告)号：US20220028921A1

    公开(公告)日：2022-01-27

    申请号：US17492729

    申请日：2021-10-04

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A Kim ,  Won Young Roh ,  Min Woo Kang

    IPC: H01L27/15 ,  H01L33/60 ,  H01L33/38

    Abstract: A light emitting device including a substrate, first and second light emitting diodes (LEDs) each including first and second semiconductor layers, a first upper electrode disposed on the second LED, electrically connected to the first LED, and insulated from the second semiconductor layer of the first LED, and a second upper electrode disposed on the second LED, electrically connected to the second LED, and insulated from the second semiconductor layer of the second LED, in which a portion of the substrate between the LEDs does not overlap the semiconductor layers, the first upper electrode has a portion electrically connected to the second semiconductor layer of the second LED and covering the first portion and portions of the LEDs, and the second upper electrode has a groove partially enclosing the portion of the first upper electrode in a plan view.

    Light emitting diode, method of fabricating the same and led module having the same
    48.
    发明授权
    Light emitting diode, method of fabricating the same and led module having the same 有权

    公开(公告)号：US10784406B2

    公开(公告)日：2020-09-22

    申请号：US16782969

    申请日：2020-02-05

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Se Hee Oh ,  Hyun A Kim

    IPC: H01L33/38 ,  H01L29/40 ,  H01L33/44 ,  H01L33/40

    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY
    49.
    发明申请
    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY 审中-公开

    公开(公告)号：US20200258936A1

    公开(公告)日：2020-08-13

    申请号：US16858560

    申请日：2020-04-24

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A Kim ,  Won Young Roh ,  Min Woo Kang

    IPC: H01L27/15

    Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.

    Light emitting diode and LED module having the same
    50.
    发明授权
    Light emitting diode and LED module having the same 有权

    公开(公告)号：US10693043B2

    公开(公告)日：2020-06-23

    申请号：US15894768

    申请日：2018-02-12

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Won Young Roh ,  Joon Sup Lee ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Seon Min Bae ,  Daewoong Suh

    IPC: H01L33/46 ,  H01L33/36 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L33/08

    Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.

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