Semiconductor device
    41.
    发明授权

    公开(公告)号:US09851942B2

    公开(公告)日:2017-12-26

    申请号:US15443015

    申请日:2017-02-27

    CPC classification number: G06F7/00 G06F17/00 G11C5/063

    Abstract: The circuit scale of a semiconductor device that can perform arithmetic processing of analog data is reduced. In the semiconductor device, a memory cell is configured to generate a first current corresponding to first analog data and to generate a second current corresponding to the first analog data and second analog data. A reference memory cell is configured to generate a reference current corresponding to reference data. A first circuit is configured to generate and hold a third current corresponding to the difference between the first current and the reference current when the first current is lower than the reference current. A second circuit is configured to generate and hold a fourth current corresponding to the difference between the first current and the reference current when the first current is higher than the reference current. One of the first circuit and the second circuit is configured to generate a fifth current corresponding to third analog data.

    Electronic Device
    49.
    发明申请
    Electronic Device 审中-公开
    电子设备

    公开(公告)号:US20160343452A1

    公开(公告)日:2016-11-24

    申请号:US15158860

    申请日:2016-05-19

    Abstract: An electronic device applicable to an artificial neuron network. The electronic device includes a first circuit, a second circuit, and first to sixth wirings. The first circuit includes a first transistor, a second transistor, and a capacitor. The second circuit includes a third transistor. A gate of the third transistor is electrically connected to the third wiring. The capacitor capacitively couples the third wiring and the gate of the second transistor. The first circuit is capable of storing a weight as an analog value. The first transistor is typically an oxide semiconductor transistor.

    Abstract translation: 适用于人造神经元网络的电子设备。 电子设备包括第一电路,第二电路和第一至第六布线。 第一电路包括第一晶体管,第二晶体管和电容器。 第二电路包括第三晶体管。 第三晶体管的栅极电连接到第三布线。 电容器将第三布线和第二晶体管的栅极电容耦合。 第一电路能够将重量作为模拟值存储。 第一晶体管通常是氧化物半导体晶体管。

    Semiconductor device including memory circuit and logic array
    50.
    发明授权
    Semiconductor device including memory circuit and logic array 有权
    半导体器件包括存储器电路和逻辑阵列

    公开(公告)号:US09494644B2

    公开(公告)日:2016-11-15

    申请号:US14542859

    申请日:2014-11-17

    Abstract: A semiconductor device in which the area of a circuit that is unnecessary during normal operation is small. The semiconductor device includes a first circuit and a second circuit. The first circuit includes a third circuit storing at least one pair of first data including a history of a branch instruction and a first address corresponding to the branch instruction; a fourth circuit comparing a second address of an instruction and the first address; and a fifth circuit selecting the first data of one pair among the at least one pair in accordance with a comparison result. The second circuit includes a plurality of sixth circuits having a function of generating a signal for testing operation of the first circuit in accordance with second data, and a function of storing the at least one pair together with the second circuit after the operation is tested.

    Abstract translation: 在正常操作期间不需要的电路的面积小的半导体器件。 半导体器件包括第一电路和第二电路。 第一电路包括存储至少一对第一数据的第三电路,第一数据包括分支指令的历史和对应于分支指令的第一地址; 比较指令的第二地址和第一地址的第四电路; 以及第五电路,根据比较结果选择至少一对中的一对的第一数据。 第二电路包括多个第六电路,其具有根据第二数据产生用于测试第一电路的操作的信号的功能,以及在测试操作之后与第二电路一起存储至少一对的功能。

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