公开(公告)号：US08461643B2

公开(公告)日：2013-06-11

申请号：US13123458

申请日：2009-09-24

申请人： Jong-Ho Lee

发明人： Jong-Ho Lee

IPC分类号： H01L27/115

CPC分类号： H01L27/1021 ,  H01L27/0688 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11551 ,  H01L27/11556

摘要： A flash memory cell stack includes a semiconductor substrate; a control electrode formed in a vertical pillar shape on a surface of the semiconductor substrate; an insulating film formed between the control electrode and the semiconductor substrate; a gate stack formed on a side surface of the control electrode; a plurality of first insulating films formed as layers on a side surface of the gate stack; a plurality of second doping semiconductor areas formed as layers on a side surface of the gate stack; and a first doping semiconductor area formed on a portion of side surfaces of the first insulating films and the second doping semiconductor areas and formed on side surfaces facing each other in a first direction. The first insulating films and the second doping semiconductor areas are alternately provided on the side surface of the gate stack.

摘要翻译： 闪存单元堆叠包括半导体衬底; 在半导体衬底的表面上形成为垂直柱状的控制电极; 形成在所述控制电极和所述半导体衬底之间的绝缘膜; 形成在所述控制电极的侧表面上的栅堆叠; 多个第一绝缘膜，形成为栅叠层的侧表面上的层; 多个第二掺杂半导体区域，形成为栅叠层的侧表面上的层; 以及第一掺杂半导体区域，形成在第一绝缘膜和第二掺杂半导体区域的一部分侧表面上，并且形成在沿第一方向彼此面对的侧表面上。 第一绝缘膜和第二掺杂半导体区交替地设置在栅叠层的侧表面上。

公开(公告)号：US20130044962A1

公开(公告)日：2013-02-21

申请号：US13545085

申请日：2012-07-10

申请人： Jaewon KIM ,  Ig Jae Kim ,  Sang Chul Ahn ,  Jong-Ho Lee

发明人： Jaewon KIM ,  Ig Jae Kim ,  Sang Chul Ahn ,  Jong-Ho Lee

IPC分类号： G06K9/40 ,  H04W88/02

CPC分类号： G06F17/30247 ,  G06F17/30265 ,  G06T3/4053

摘要： A method and system for reconstructing an image displayed on an electronic device connected to a network, to be a high resolution image. The method of reconstructing a selected area of the image displayed on the electronic device connected to a network, to be a high resolution image, includes: receiving a request to expand the selected area; collecting images including the selected area from the Internet; correcting the selected area to have a high resolution while expanding the selected area based on the collected images; and displaying the image expanded to have a high resolution on the electronic device.

摘要翻译： 一种用于重建显示在连接到网络的电子设备上的图像的方法和系统，以成为高分辨率图像。 将显示在连接到网络的电子设备上的图像的选定区域重建为高分辨率图像的方法包括：接收扩展所选区域的请求; 从互联网收集包括所选区域的图像; 基于所收集的图像，将所选择的区域校正为具有高分辨率，同时扩展所选择的区域; 并且在电子设备上显示被扩展为具有高分辨率的图像。

公开(公告)号：US20130022642A1

公开(公告)日：2013-01-24

申请号：US13635874

申请日：2011-03-18

申请人： Young Woo Park ,  Ki Won Jo ,  Srok Ho Yoo ,  Jung Yu ,  Sun-Ha Yoon ,  Ji Hyun Park ,  Eun Jung Song ,  Jong-Ho Lee ,  Min Ji Seo ,  Sun Jung Cho ,  Mi La Cho ,  Ho Youn Kim ,  Mi Kyung Park ,  Hye Jwa Oh ,  Jin Sil Park ,  Yun Ju Woo ,  Jae Kyeong Byun ,  Jun Geol Ryu

发明人： Young Woo Park ,  Ki Won Jo ,  Srok Ho Yoo ,  Jung Yu ,  Sun-Ha Yoon ,  Ji Hyun Park ,  Eun Jung Song ,  Jong-Ho Lee ,  Min Ji Seo ,  Sun Jung Cho ,  Mi La Cho ,  Ho Youn Kim ,  Mi Kyung Park ,  Hye Jwa Oh ,  Jin Sil Park ,  Yun Ju Woo ,  Jae Kyeong Byun ,  Jun Geol Ryu

IPC分类号： C07K19/00 ,  C12N15/63 ,  C12N1/21 ,  C12N5/10 ,  A61K38/17 ,  A61P21/00 ,  A61P3/10 ,  A61P19/02 ,  A61P37/06 ,  A61P25/00 ,  A61P17/00 ,  C12N15/62 ,  A61P7/06

CPC分类号： C07K14/7151 ,  C07K14/7155 ,  C07K2319/00

摘要： The present invention relates to TNFR2-IL21R fusion protein acting as a double-antagonist to TNF-alpha (α) and IL-21. The composition containing the double antagonist to TNF-α and Il-21 (TNFR2-IL21R fusion protein), known as major causes of autoimmune rheumatoid arthritis, one of autoimmune diseases, can reduce the secretion of inflammatory cytokine, increase the secretion of anti-inflammatory cytokine, and suppress the differentiation of osteoclasts better than single proteins such as TNFR2-Fc and IL21R-Fc. The TNFR2-IL21R fusion protein of the present invention has not only excellent treatment effect on arthritis in CIA mouse model not also excellent treatment effect on autoimmune rheumatoid arthritis by increasing the expression of Treg, the immune suppressive cells. Therefore, the TNFR2-IL21R fusion protein of the present invention can be effectively used as an active ingredient for the composition for the prevention and treatment of autoimmune disease.

摘要翻译： 本发明涉及作为TNF-α（α）和IL-21的双重拮抗剂的TNFR2-IL21R融合蛋白。 含有TNF-α和II-21（TNFR2-IL21R融合蛋白）的双重拮抗剂的组合物，被称为自身免疫性类风湿性关节炎的主要原因（自身免疫性疾病之一）可以减少炎性细胞因子的分泌， 炎性细胞因子，并且比单一蛋白如TNFR2-Fc和IL21R-Fc更好地抑制破骨细胞的分化。 本发明的TNFR2-IL21R融合蛋白不仅对CIA小鼠模型的关节炎具有优异的治疗作用，而且通过增加免疫抑制细胞Treg的表达，对自身免疫性类风湿性关节炎也不是很好的治疗效果。 因此，本发明的TNFR2-IL21R融合蛋白可以有效地用作预防和治疗自身免疫性疾病的组合物的活性成分。

公开(公告)号：US07995677B2

公开(公告)日：2011-08-09

申请号：US12157627

申请日：2008-06-12

申请人： Jong-Ho Lee ,  Sang-Boh Yun ,  Young-Hoon Kwon ,  Sung-Soo Hwang ,  Sung-Yoon Jung ,  Soong-Yoon Choi ,  Hyun-Cheol Park ,  Hyoun-Kuk Kim

发明人： Jong-Ho Lee ,  Sang-Boh Yun ,  Young-Hoon Kwon ,  Sung-Soo Hwang ,  Sung-Yoon Jung ,  Soong-Yoon Choi ,  Hyun-Cheol Park ,  Hyoun-Kuk Kim

IPC分类号： H03K9/00

CPC分类号： H04L25/03012 ,  H04L1/0631 ,  H04L1/0668 ,  H04L25/0204 ,  H04L25/0242 ,  H04L25/0246 ,  H04L25/067

摘要： An apparatus and method for detecting a signal in a receiver by maximum likelihood (ML) are provided, in which symbols are detected according to the number of transmit antennas of a transmitter and a modulation scheme, channels are estimated, an equivalent channel matrix corresponding to the estimated channels is determined, a permuted equivalent channel matrix is determined by multiplying the equivalent channel matrix by a predetermined permutation matrix, the permuted equivalent channel matrix is QR decomposed, a hard decision is performed on predetermined symbols among the detected symbols using a received signal resulting from the QR decomposition, and the log likelihood ratios (LLRs) of the hard-decided symbols are determined.

摘要翻译： 提供一种用于通过最大似然（ML）检测接收机中的信号的装置和方法，其中根据发射机的发射天线的数量和调制方案检测符号，估计信道，对应于 确定估计的信道，通过将等效信道矩阵乘以预定的置换矩阵来确定置换的等效信道矩阵，将经排列的等效信道矩阵QR分解，使用接收信号对检测符号中的预定符号执行硬判决 由QR分解产生，并确定硬判决符号的对数似然比（LLR）。

公开(公告)号：US07829953B2

公开(公告)日：2010-11-09

申请号：US11966640

申请日：2007-12-28

申请人： Hyung Suk Jung ,  Jong-Ho Lee ,  Sung Kee Han ,  Ha Jin Lim

发明人： Hyung Suk Jung ,  Jong-Ho Lee ,  Sung Kee Han ,  Ha Jin Lim

IPC分类号： H01L29/72

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/823857 ,  H01L27/0922 ,  H01L29/20 ,  H01L29/22 ,  H01L29/24 ,  H01L29/49 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： A semiconductor device includes a semiconductor substrate including an NMOS region and a PMOS region, a gate insulating layer formed on the semiconductor substrate, an NMOS gate formed on the gate insulating layer of the NMOS region, and a PMOS gate formed on the gate insulating layer of the PMOS region. Any one of the NMOS gate and the PMOS gate includes a one-layered conductive layer pattern, and another of the NMOS gate and the PMOS gate includes a three-layered conductive layer pattern.

摘要翻译： 半导体器件包括：包括NMOS区域和PMOS区域的半导体衬底;形成在半导体衬底上的栅极绝缘层;形成在NMOS区域的栅极绝缘层上的NMOS栅极;以及栅极绝缘层上形成的PMOS栅极; 的PMOS区域。 NMOS栅极和PMOS栅极中的任何一个包括单层导电层图案，NMOS栅极和PMOS栅极中的另一个包括三层导电层图案。

公开(公告)号：US20100052043A1

公开(公告)日：2010-03-04

申请号：US12312717

申请日：2007-11-19

申请人： Jong-Ho Lee

发明人： Jong-Ho Lee

IPC分类号： H01L29/792

CPC分类号： H01L29/42332 ,  H01L27/115 ,  H01L27/11519 ,  H01L29/42348 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854 ,  H01L29/7881 ,  H01L29/7887 ,  H01L29/792 ,  H01L29/7923

摘要： The present invention provides a flash memory device having a high degree of integration and high performance. The flash memory device has a double/triple gate structure where a channel is formed in a wall-shaped body. The flash memory device has no source/drain regions. In addition, although the flash memory device has the source/drain regions, the source/drain region are formed not to be overlapped with a control electrode. Accordingly, an inversion layer is induced by a fringing field generated from the control electrode, so that cell devices can be electrically connected to each other. The flash memory device includes a charge storage node for storing charges formed under the control electrode, so that miniaturization characteristics of cell device can be improved. According to the present invention, there is proposed a new device capable of improving the miniaturization characteristics of a MOS-based flash memory device and increasing memory capacity.

摘要翻译： 本发明提供一种具有高集成度和高​​性能的闪速存储器件。 闪存装置具有双/三栅结构，其中通道形成在壁形体中。 闪存器件没有源极/漏极区域。 另外，尽管闪存器件具有源极/漏极区域，但是源极/漏极区域形成为不与控制电极重叠。 因此，通过从控制电极产生的边缘场引起反转层，使得电池器件可以彼此电连接。 闪速存储装置包括用于存储形成在控制电极下面的电荷的电荷存储节点，从而可以提高电池装置的小型化特性。 根据本发明，提出了能够提高基于MOS的闪速存储器件的小型化特性并提高存储容量的新器件。

公开(公告)号：US20100046655A1

公开(公告)日：2010-02-25

申请号：US12543896

申请日：2009-08-19

申请人： Joo-Hyun LEE ,  Jong-Ho Lee ,  Sung-soo Hwang ,  Joon-Hyuk Kang ,  Won-Taek Song ,  Kyung-Ho Park ,  Nam-Seok Chang

发明人： Joo-Hyun LEE ,  Jong-Ho Lee ,  Sung-soo Hwang ,  Joon-Hyuk Kang ,  Won-Taek Song ,  Kyung-Ho Park ,  Nam-Seok Chang

IPC分类号： H04L5/12

CPC分类号： H04B7/0639 ,  H04L25/0204 ,  H04L25/0228

摘要： Apparatuses and methods for transmitting and receiving in a multi-antenna system are provided. A receiver for reducing a quantization error of channel information feedback in a multi-antenna system includes a restore vector generator for selecting a codeword ck and d determining a real part wkreal and an imaginary part wkimag of a restore vector corresponding to the codeword; and a post-processor for performing post-processing by multiplying the real part wkreal of the restore vector by a first reception signal and multiplying the imaginary part wkimag of the restore vector by a second reception signal.

摘要翻译： 提供了一种用于在多天线系统中发送和接收的装置和方法。 用于减少多天线系统中的信道信息反馈的量化误差的接收机包括用于选择码字ck的恢复向量生成器，以及确定与码字相对应的恢复向量的实部wkreal和虚部wkimag; 以及后处理器，用于通过将所述恢复向量的实部wkreal乘以第一接收信号并将所述恢复向量的虚部wkimag乘以第二接收信号来执行后处理。

公开(公告)号：US20100025781A1

公开(公告)日：2010-02-04

申请号：US12574912

申请日：2009-10-07

申请人： Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung

发明人： Ha-Jin Lim ,  Jong-Ho Lee ,  Hyung-Suk Jung

IPC分类号： H01L29/78 ,  H01L21/31

CPC分类号： H01L21/28185 ,  H01L21/28079 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

摘要： Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises a metal oxide, a metal silicate, an aluminate, or a mixture thereof, and an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a Group III metal oxide, Group III metal nitride, Group XIII metal oxide or Group XIII metal nitride. A gate electrode is provided on the multilayered dielectric film.

摘要翻译： 提供了在通道区​​域上包括多层电介质膜的晶体管。 多层电介质包括下电介质膜，该电介质膜的厚度至少为多层电介质膜的厚度的50％，并且包括金属氧化物，金属硅酸盐，铝酸盐或其混合物，以及上电介质膜 在下介电膜上，上电介质膜包含III族金属氧化物，III族金属氮化物，第ⅩⅢ族金属氧化物或第ⅩⅢ族金属氮化物。 在多层电介质膜上设置栅电极。

公开(公告)号：US20100023935A1

公开(公告)日：2010-01-28

申请号：US12374708

申请日：2007-07-24

申请人： Jong-Ho Lee ,  Kwang-Hyun Koh

发明人： Jong-Ho Lee ,  Kwang-Hyun Koh

IPC分类号： G06F9/44

CPC分类号： H04N21/443 ,  H04H20/91 ,  H04H20/93 ,  H04H60/25 ,  H04N21/235 ,  H04N21/435 ,  H04N21/4424 ,  H04N21/8166 ,  H04N21/8586

摘要： An apparatus, system and method for software upgrade are provided. The software upgrading system includes a broadcast transmitting device which transmits a digital broadcasting signal; a broadcast receiving device which receives the digital broadcasting signal, extracts upgrade information that relates to acquiring an upgrade image for upgrading software from the digital broadcasting signal which is received, and requests the upgrade image based on the upgrade information which is extracted; and an upgrade image storage device which transmits the upgrade image according to the upgrade image request. The broadcast receiving device upgrades the software by receiving the upgrade image from the upgrade image storage device.

摘要翻译： 提供了一种用于软件升级的设备，系统和方法。 软件升级系统包括发送数字广播信号的广播发送装置; 接收数字广播信号的广播接收装置从接收到的数字广播信号中提取与获取用于升级软件的升级图像有关的升级信息，并根据所提取的升级信息请求升级图像; 以及升级图像存储装置，其根据升级图像请求发送升级图像。 广播接收装置通过从升级图像存储装置接收升级图像来升级软件。

公开(公告)号：US07638365B2

公开(公告)日：2009-12-29

申请号：US11623279

申请日：2007-01-15

申请人： Se-Young Jeong ,  Nam-Seog Kim ,  Cha-Jea Jo ,  Jong-Ho Lee ,  Myeong-Soon Park

发明人： Se-Young Jeong ,  Nam-Seog Kim ,  Cha-Jea Jo ,  Jong-Ho Lee ,  Myeong-Soon Park

IPC分类号： H01L21/50 ,  H01L21/48 ,  H01L21/44 ,  H01L23/52 ,  H01L23/48 ,  H01L29/40 ,  H01L27/146 ,  H01L27/148 ,  H01L23/02

CPC分类号： H01L23/3114 ,  H01L23/5389 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/50 ,  H01L2224/24998 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82007 ,  H01L2225/06524 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599

摘要： Provided is a stacked chip package and a method for forming the same. A spacer is formed on a side of an upper chip. A conductive line is formed on the spacer to electrically connect upper and lower chips. The reliability of the stacked chip package is improved because wire bonding is not used to electrically connect the upper and lower chips. Further, the overall size of the stacked chip package can be reduced as the height of bonding wire loops does not contribute to the overall stacked chip package height.

摘要翻译： 提供一种堆叠式芯片封装及其形成方法。 间隔件形成在上芯片的一侧。 在间隔件上形成导线以电连接上芯片和下芯片。 堆叠式芯片封装的可靠性得到改善，因为引线接合不用于电连接上下芯片。 此外，堆叠的芯片封装的整体尺寸可以减小，因为接合线环的高度对整个堆叠的芯片封装高度没有贡献。