公开(公告)号：US07361960B1

公开(公告)日：2008-04-22

申请号：US09688989

申请日：2000-10-17

申请人： Yoshitaka Tsunashima ,  Kiyotaka Miyano ,  Yukihiro Ushiku

发明人： Yoshitaka Tsunashima ,  Kiyotaka Miyano ,  Yukihiro Ushiku

IPC分类号： H01L29/76 ,  H01L31/00

CPC分类号： H01L27/11502 ,  H01L21/76224 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823475 ,  H01L27/10873 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11534 ,  H01L29/78391 ,  Y10S257/903

摘要： A first insulator film and a first polysilicon film are formed on first and second element regions of a semiconductor substrate. The first insulator film and first polysilicon film are removed from the second element region. A second insulator film is formed on the second element region from which the first insulator film and first polysilicon film are removed, and a second polysilicon film is formed on the second insulator film. The first polysilicon film is processed, forming a first gate electrode at the first element region. The second polysilicon film is processed, forming a second gate electrode at the second element region. A silicon nitride film is removed from an element-isolation region. A metal film is formed on the region from which the silicon nitride film has been removed, and connects the first and second gate electrodes.

摘要翻译： 第一绝缘膜和第一多晶硅膜形成在半导体衬底的第一和第二元件区上。 从第二元件区域去除第一绝缘膜和第一多晶硅膜。 在除去第一绝缘膜和第一多晶硅膜的第二元件区域上形成第二绝缘膜，在第二绝缘膜上形成第二多晶硅膜。 处理第一多晶硅膜，在第一元件区域形成第一栅电极。 处理第二多晶硅膜，在第二元件区域形成第二栅电极。 从元件隔离区域去除氮化硅膜。 在去除了氮化硅膜的区域上形成金属膜，并且连接第一和第二栅电极。

公开(公告)号：US20070218605A1

公开(公告)日：2007-09-20

申请号：US11790033

申请日：2007-04-23

申请人： Yoshio Ozawa ,  Yasumasa Suizu ,  Yoshitaka Tsunashima

发明人： Yoshio Ozawa ,  Yasumasa Suizu ,  Yoshitaka Tsunashima

IPC分类号： H01L21/765

CPC分类号： H01L29/7881 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02233 ,  H01L21/02271 ,  H01L21/28044 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28273 ,  H01L21/3144 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66825 ,  H01L29/7833 ,  Y10S438/911 ,  Y10S438/942 ,  Y10S438/947 ,  Y10S438/966

摘要： A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode is formed on the gate electrode insulating film, and an oxidation process using ozone is performed to sufficiently round the shape of the lower edge of the gate electrode.

公开(公告)号：US20070200168A1

公开(公告)日：2007-08-30

申请号：US11706999

申请日：2007-02-16

申请人： Yoshio Ozawa ,  Yoshitaka Tsunashima

发明人： Yoshio Ozawa ,  Yoshitaka Tsunashima

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/4234

摘要： A MONOS type nonvolatile memory cell is structured such that a laminated insulating film which is formed by sequentially laminating a tunnel insulating layer, a charge storage insulating layer, and a charge block insulating layer is provided on a convex curved surface portion of a semiconductor substrate, and a control gate electrode is further formed thereon. A thickness of the tunnel insulating layer is set to be 4 to 10 nm, and data writing/data erasing operations are carried out by making an F-N tunneling current flow in the tunnel insulating layer.

摘要翻译： 构造为在半导体衬底的凸曲面部分上设置通过依次层叠隧道绝缘层，电荷存储绝缘层和电荷块绝缘层而形成的叠层绝缘膜的MONOS型非易失性存储单元， 并且还在其上形成控制栅电极。 将隧道绝缘层的厚度设定为4〜10nm，通过在隧道绝缘层中形成F-N隧道电流来进行数据写入/数据擦除动作。

公开(公告)号：US20060270170A1

公开(公告)日：2006-11-30

申请号：US11227252

申请日：2005-09-16

申请人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

发明人： Osamu Arisumi ,  Masahiro Kiyotoshi ,  Katsuhiko Hieda ,  Yoshitaka Tsunashima

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/11524

摘要： A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽中形成具有第一凹陷部分的第一绝缘膜，形成涂膜以便将其涂覆在第一凹部中，将涂膜转变为 第二绝缘膜，平坦化第二绝缘膜以暴露第一绝缘膜和第二绝缘膜，至少从第一凹部去除第二绝缘膜，以调节形成在沟槽中的第一凹部的纵横比，由此形成 在其中形成第二凹部，在半导体衬底的表面上形成第三绝缘膜，以便填充第二凹部。

公开(公告)号：US20060244083A1

公开(公告)日：2006-11-02

申请号：US11475879

申请日：2006-06-28

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L29/78

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

公开(公告)号：US20050170666A1

公开(公告)日：2005-08-04

申请号：US10999937

申请日：2004-12-01

申请人： Katsuyuki Sekine ,  Yoshitaka Tsunashima ,  Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Yoshitaka Tsunashima ,  Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Kazuhiro Eguchi

IPC分类号： H01L21/316 ,  H01L21/314 ,  H01L29/78 ,  H01L21/31 ,  H01L21/469 ,  H01L21/425 ,  H01L21/22

CPC分类号： H01L21/02321 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3143 ,  H01L21/31645 ,  H01L29/518

摘要： A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using ND3 gas.

摘要翻译： 本文公开的半导体器件的制造方法包括：在基板上形成含有金属的硅酸盐膜; 并通过使用ND 3 N 3气体将氮和氘引入到硅酸盐膜中。

公开(公告)号：US20050006675A1

公开(公告)日：2005-01-13

申请号：US10915805

申请日：2004-08-11

申请人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

发明人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

IPC分类号： H01L21/283 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/76 ,  H01L31/062 ,  B21D39/00 ,  H01L31/119

CPC分类号： H01L21/82345 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31604 ,  H01L21/823462 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656

摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

摘要翻译： 权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构 膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

公开(公告)号：US06133121A

公开(公告)日：2000-10-17

申请号：US950913

申请日：1997-10-15

申请人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Shigeru Yonemoto

发明人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Shigeru Yonemoto

IPC分类号： C23C16/458 ,  H01L21/31 ,  H01L21/324 ,  H01L21/673 ,  C23C16/00

CPC分类号： H01L21/67303 ,  C23C16/4583 ,  H01L21/67306 ,  H01L21/67309

摘要： A plurality of rods are arranged between first and second plates. A plurality of support members formed of heat-resistant strings, for example, SiC are stretched between the rods and wafers are supported by the support members. The wafers are separated from the rods while they are supported on the support members.

摘要翻译： 多个杆布置在第一和第二板之间。 由耐热线圈例如SiC形成的多个支撑构件在杆之间拉伸，并且晶片由支撑构件支撑。 当晶片被支撑在支撑构件上时，晶片与棒分离。

公开(公告)号：US6091117A

公开(公告)日：2000-07-18

申请号：US373558

申请日：1999-08-13

申请人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

发明人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/08

CPC分类号： H01L29/66628 ,  H01L21/76895 ,  H01L29/0847

摘要： A field effect transistor is manufactured by forming an isolating structure on a semiconductor substrate to define an active area. A gate structure is formed which is insulated from a surface of the active area of the semiconductor substrate. An amorphous silicon film is formed on the gate structure, on the surface of the semiconductor substrate, and on the isolating structure. A first portion of the amorphous silicon film is converted to an epitaxial film and a second portion of the amorphous silicon film is converted to a polysilicon film. Impurities are diffused throughout the polysilicon film and into an upper surface portion of said epitaxial film. The impurity doped polysilicon film and the upper surface portion of the epitaxial film are oxidized to form oxide films and the oxide films are removed so that the epitaxial film remains at least on the active area of the semiconductor substrate. Source and drain regions of the transistor are formed in the active area of the semiconductor substrate.

摘要翻译： 通过在半导体衬底上形成隔离结构来限定有源区域来制造场效应晶体管。 形成与半导体衬底的有源区的表面绝缘的栅极结构。 在栅极结构，半导体衬底的表面和隔离结构上形成非晶硅膜。 将非晶硅膜的第一部分转变为外延膜，将非晶硅膜的第二部分转换为多晶硅膜。 杂质扩散到整个多晶硅膜并进入所述外延膜的上表面部分。 杂质掺杂多晶硅膜和外延膜的上表面部分被氧化以形成氧化物膜，并且去除氧化物膜，使得外延膜至少保留在半导体衬底的有源区上。 晶体管的源区和漏区形成在半导体衬底的有源区中。

公开(公告)号：US5970352A

公开(公告)日：1999-10-19

申请号：US64716

申请日：1998-04-23

申请人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

发明人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/08

CPC分类号： H01L29/66628 ,  H01L21/76895 ,  H01L29/0847

摘要： A field effect transistor is manufactured by forming an isolating structure on a semiconductor substrate to define an active area. A gate structure is formed which is insulated from a surface of the active area of the semiconductor substrate. An amorphous silicon film is formed on the gate structure, on the surface of the semiconductor substrate, and on the isolating structure. A first portion of the amorphous silicon film is converted to an epitaxial film and a second portion of the amorphous silicon film is converted to a polysilicon film. Impurities are diffused throughout the polysilicon film and into an upper surface portion of said epitaxial film. The impurity doped polysilicon film and the upper surface portion of the epitaxial film are oxidized to form oxide films and the oxide films are removed so that the epitaxial film remains at least on the active area of the semiconductor substrate. Source and drain regions of the transistor are formed in the active area of the semiconductor substrate.

摘要翻译： 通过在半导体衬底上形成隔离结构来限定有源区域来制造场效应晶体管。 形成与半导体衬底的有源区的表面绝缘的栅极结构。 在栅极结构，半导体衬底的表面和隔离结构上形成非晶硅膜。 将非晶硅膜的第一部分转变为外延膜，将非晶硅膜的第二部分转换为多晶硅膜。 杂质扩散到整个多晶硅膜并进入所述外延膜的上表面部分。 杂质掺杂多晶硅膜和外延膜的上表面部分被氧化以形成氧化物膜，并且去除氧化物膜，使得外延膜至少保留在半导体衬底的有源区上。 晶体管的源区和漏区形成在半导体衬底的有源区中。