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5368 条记录 (耗时 0.039 秒)

    Method of plasma etching amorphous carbon films
    44.
    发明授权
    Method of plasma etching amorphous carbon films 失效
    等离子体蚀刻无定形碳膜的方法

    公开(公告)号：US4975144A

    公开(公告)日：1990-12-04

    申请号：US324663

    申请日：1989-03-17

    申请人： Shunpei Yamazaki ,  Kenji Itoh

    发明人： Shunpei Yamazaki ,  Kenji Itoh

    IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/48

    CPC分类号： H01L21/481 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139

    摘要： An etching method for selectively eliminating carbon material deposited on a substrate is described. A layer of masking material may be applied over areas of the carbon coating whose removal is not desired. After disposing the substrate coated with the carbon material in a CVD reaction chamber, NF.sub.3 is admitted to the chamber and converted into a plasma etchant comprising fluorine ions or radicals by inputting high frequency energy. The fluorine ions or radicals remove all unmasked carbon, leaving a carbon film pattern on the substrate which may be used in the manufacture of an IC. The carbon material elimination method can also be used for chamber cleaning to removing carbon deposited debris from the inside of the CVD reaction chamber.

    摘要翻译： 描述了用于选择性地去除沉积在基板上的碳材料的蚀刻方法。 可以将一层掩模材料施加在不需要去除的碳涂层的区域上。 将涂覆有碳材料的基材设置在CVD反应室中之后，通过输入高频能量，将NF3进入室并转化为包含氟离子或自由基的等离子体蚀刻剂。 氟离子或自由基除去所有未掩蔽的碳，在基板上留下可用于制造IC的碳膜图案。 碳材料消除方法也可以用于室内清洁以从CVD反应室的内部除去碳沉积的碎屑。

    Electronic device manufacturing methods
    46.
    发明授权
    Electronic device manufacturing methods 失效
    电子元件制造方法

    公开(公告)号：US4680855A

    公开(公告)日：1987-07-21

    申请号：US791733

    申请日：1985-10-28

    申请人： Shunpei Yamazaki ,  Kenji Itoh ,  Susumu Nagayama

    发明人： Shunpei Yamazaki ,  Kenji Itoh ,  Susumu Nagayama

    IPC分类号： H01L21/268 ,  H01L21/311 ,  H01L21/3213 ,  H05K3/02 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/32131 ,  H01L21/268 ,  H01L21/31105 ,  H05K3/027 ,  Y10S438/94

    摘要： An electronic device manufacturing method including a step of forming a layer member to be patterned, which is a conductive metal layer member, a laminate member of a transparent conductive layer and a non-transparent or reflective layer or a non-single-crystal semiconductor layer member, and a step of scanning the layer member by a spot-shaped laser beam or exposing the layer member to radiation by one or more linear pulsed laser beams, thereby forming the patterned layer.

    摘要翻译： 一种电子器件制造方法，包括形成作为导电金属层构件的图案化层构件的步骤，透明导电层和非透明或反射层或非单晶半导体层的层叠构件 以及通过点形激光束扫描层构件或者通过一个或多个线性脉冲激光束将层构件暴露于辐射的步骤，从而形成图案化层。

    Driver circuit and display device
    50.
    发明授权
    Driver circuit and display device 有权

    公开(公告)号：US09842859B2

    公开(公告)日：2017-12-12

    申请号：US12606340

    申请日：2009-10-27

    申请人： Jun Koyama ,  Shunpei Yamazaki

    发明人： Jun Koyama ,  Shunpei Yamazaki

    IPC分类号： G09G5/00 ,  H01L27/12

    CPC分类号： H01L27/1225 ,  H01L27/1248

    摘要： The driver circuit includes an inverter circuit having a first thin film transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film. The first thin film transistor and the second thin film transistor are enhancement transistors, in which a silicon oxide film including an OH group is provided on and in contact with the first oxide semiconductor film and the second oxide semiconductor film, and a silicon nitride film is provided on and in contact with the silicon oxide film.