公开(公告)号：US08822137B2

公开(公告)日：2014-09-02

申请号：US13197325

申请日：2011-08-03

申请人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

发明人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

IPC分类号： H01L23/48

CPC分类号： H01L23/5222 ,  H01L21/768 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed on vertical surfaces of a mandrel. The sidewall portions form spaced-apart openings. Conductive structures fill the spaced-apart openings and are separated by the sidewall portions to form single damascene structures.

摘要翻译： 互连结构及其制造方法包括层间电介质层的侧壁部分。 侧壁部分具有小于给定平版印刷技术的最小特征尺寸的宽度，并且当在心轴的垂直表面上共形形成时，宽度由层间电介质层的厚度形成。 侧壁部分形成间隔开的开口。 导电结构填充间隔开的开口并且被侧壁部分分开以形成单个镶嵌结构。

公开(公告)号：US20140024198A1

公开(公告)日：2014-01-23

申请号：US13551659

申请日：2012-07-18

申请人： Balasubramanian S. Haran ,  Sanjay Mehta ,  Theodorus E. Standaert

发明人： Balasubramanian S. Haran ,  Sanjay Mehta ,  Theodorus E. Standaert

IPC分类号： H01L21/76

CPC分类号： H01L21/76283 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/66545

摘要： A method for fin field effect transistor (finFET) device formation includes forming a plurality of fins on a substrate; forming a gate region over the plurality of fins; and forming isolation areas for the finFET device after formation of the gate region, wherein forming the isolation areas for the finFET device comprises performing one of oxidation or removal of a subset of the plurality of fins.

摘要翻译： 鳍状场效应晶体管（finFET）器件形成的方法包括在衬底上形成多个翅片; 在所述多个翅片上形成栅极区域; 以及在形成栅极区域之后形成用于finFET器件的隔离区域，其中形成用于finFET器件的隔离区域包括执行多个鳍片的子集的氧化或去除之一。

公开(公告)号：US08535999B2

公开(公告)日：2013-09-17

申请号：US12902624

申请日：2010-10-12

申请人： Lahir Adam ,  Bruce B. Doris ,  Sanjay Mehta ,  Zhengmao Zhu

发明人： Lahir Adam ,  Bruce B. Doris ,  Sanjay Mehta ,  Zhengmao Zhu

IPC分类号： H01L21/02

CPC分类号： H01L29/7847

摘要： Semiconductor substrate with a deformed gate region and a method for the fabrication thereof. The semiconductor substrate has improved device performance compared to devices without a deformed gate region and decreased dopant loss compared to devices with deformed source/drain regions.

摘要翻译： 具有变形栅极区域的半导体衬底及其制造方法。 与具有变形的源极/漏极区域的器件相比，半导体衬底与不具有变形栅极区域的器件相比具有改进的器件性能和降低的掺杂剂损耗。

公开(公告)号：US08486778B2

公开(公告)日：2013-07-16

申请号：US13183666

申请日：2011-07-15

申请人： Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sivananda K. Kanakasabapathy ,  Sanjay Mehta

发明人： Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sivananda K. Kanakasabapathy ,  Sanjay Mehta

IPC分类号： H01L21/8238 ,  H01L21/336

CPC分类号： H01L29/66772 ,  H01L29/6653 ,  H01L29/78621

摘要： A gate dielectric is patterned after formation of a first gate spacer by anisotropic etch of a conformal dielectric layer to minimize overetching into a semiconductor layer. In one embodiment, selective epitaxy is performed to sequentially form raised epitaxial semiconductor portions, a disposable gate spacer, and raised source and drain regions. The disposable gate spacer is removed and ion implantation is performed into exposed portions of the raised epitaxial semiconductor portions to form source and drain extension regions. In another embodiment, ion implantation for source and drain extension formation is performed through the conformal dielectric layer prior to an anisotropic etch that forms the first gate spacer. The presence of the raised epitaxial semiconductor portions or the conformation dielectric layer prevents complete amorphization of the semiconductor material in the source and drain extension regions, thereby enabling regrowth of crystalline source and drain extension regions.

公开(公告)号：US20130062753A1

公开(公告)日：2013-03-14

申请号：US13228857

申请日：2011-09-09

申请人： Son Van Nguyen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Sanjay Mehta

发明人： Son Van Nguyen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Sanjay Mehta

IPC分类号： H01L23/48 ,  C09K3/00 ,  H01L21/31

CPC分类号： H01L21/02112 ,  H01B3/12 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53252 ,  H01L23/53276 ,  H01L29/1054 ,  H01L29/1606 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/4983 ,  H01L29/78648 ,  H01L2924/0002 ,  H01L2924/00

摘要： A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.

摘要翻译： 提供具有等于或小于3.6的介电常数的富碳碳氮化硼介电膜，其可用作各种电子器件中的组分。 富碳碳氮化硼电介质膜具有C x B y N z的化学式，其中x为35原子％以上，y为6原子％〜32原子％，z为8原子％〜33原子％。

公开(公告)号：US07855428B2

公开(公告)日：2010-12-21

申请号：US12115699

申请日：2008-05-06

申请人： Robert H. Dennard ,  Mark C. Hakey ,  David V. Horak ,  Sanjay Mehta

发明人： Robert H. Dennard ,  Mark C. Hakey ,  David V. Horak ,  Sanjay Mehta

IPC分类号： H01L21/76

CPC分类号： H01L21/76283

摘要： The invention relates to a design structure, and more particularly, to a design structure for a conductive liner for rad hard total dose immunity and a structure thereof. The structure includes at least one shallow trench isolation structure having oxide material and formed in an SOI. A dielectric liner is formed at an interface of the SOI within the at least one shallow trench isolation structure. A metal or metal alloy layer is formed in the at least one shallow trench isolation structure and between the dielectric liner and the oxide material.

摘要翻译： 本发明涉及一种设计结构，更具体地，涉及一种用于辐射硬总剂量免疫的导电衬垫的设计结构及其结构。 该结构包括至少一个具有氧化物材料并在SOI中形成的浅沟槽隔离结构。 在所述至少一个浅沟槽隔离结构内的SOI的界面处形成电介质衬垫。 在所述至少一个浅沟槽隔离结构中以及所述电介质衬垫和所述氧化物材料之间形成金属或金属合金层。

公开(公告)号：US07816253B2

公开(公告)日：2010-10-19

申请号：US11308422

申请日：2006-03-23

申请人： Shyng-Tsong Chen ,  Qinghuang Lin ,  Kelly Malone ,  Sanjay Mehta ,  Terry A. Spooner ,  Chih-Chao Yang

发明人： Shyng-Tsong Chen ,  Qinghuang Lin ,  Kelly Malone ,  Sanjay Mehta ,  Terry A. Spooner ,  Chih-Chao Yang

IPC分类号： H01L21/76 ,  H01L21/425 ,  H01L21/4763

CPC分类号： H01L21/76825 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76831

摘要： When an interconnect structure is built on porous ultra low k (ULK) material, the bottom of the trench and/or via is usually damaged by a following metallization process which may be suitable for dense higher dielectric materials. Embodiment of the present invention may provide a method of forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes steps of treating an exposed area of said ILD material to create a densified area, and metallizing said densified area.

摘要翻译： 当在多孔超低k（ULK）材料上构建互连结构时，沟槽和/或通孔的底部通常被以下金属化工艺损坏，这可能适合于较高的介电材料。 本发明的实施例可以提供在层间电介质（ILD）材料上形成互连结构的方法。 该方法包括处理所述ILD材料的暴露区域以产生致密化区域以及金属化所述致密化区域的步骤。

公开(公告)号：US20100234501A1

公开(公告)日：2010-09-16

申请号：US12280283

申请日：2007-02-21

申请人： Sanjay Mehta ,  Mark Ryan Roodvoets

发明人： Sanjay Mehta ,  Mark Ryan Roodvoets

IPC分类号： C08K5/17 ,  B29C49/04 ,  C08K5/12 ,  C08K5/10 ,  C08K5/13 ,  C08K5/06 ,  C08K5/092

CPC分类号： C08G63/916 ,  C08K5/0008 ,  C08K2201/008 ,  C08L67/02

摘要： The present invention relates to a thermoplastic polymer composition with enhanced gas barrier properties comprising a thermoplastic polymer, an antiplasticizer and a chain extender. Suitable antiplasticizers and suitable chain extenders are disclosed herein. Other embodiments of the present invention include a method to produce such a thermoplastic composition, an article comprising such a thermoplastic composition, and a method for making such an article.

摘要翻译： 本发明涉及具有增强的阻气性的热塑性聚合物组合物，其包含热塑性聚合物，抗增塑剂和扩链剂。 本文公开了合适的抗增塑剂和合适的增链剂。 本发明的其它实施方案包括制备这种热塑性组合物的方法，包含这种热塑性组合物的制品以及制备这种制品的方法。

公开(公告)号：US20100076799A1

公开(公告)日：2010-03-25

申请号：US12284943

申请日：2008-09-25

申请人： Michael Andrew Magent ,  Debashis Neogi ,  Sanjay Mehta ,  Jean Jenkins ,  Malcolm Merritt Waring ,  Charles Roland Lewis ,  Michael S. Toth ,  Gregory Robert Glick ,  Robert S. Barbieri ,  Cecilia Anna Paulette Petit

发明人： Michael Andrew Magent ,  Debashis Neogi ,  Sanjay Mehta ,  Jean Jenkins ,  Malcolm Merritt Waring ,  Charles Roland Lewis ,  Michael S. Toth ,  Gregory Robert Glick ,  Robert S. Barbieri ,  Cecilia Anna Paulette Petit

IPC分类号： G06Q10/00 ,  G06Q50/00

CPC分类号： G06Q50/22 ,  G06N20/00 ,  G06Q30/0202 ,  G16H50/50 ,  Y02A90/22 ,  Y02A90/26

摘要： Systems and methods are provided for predicting rare events, such as hospitalization events. A set of data records, each containing multiple attributes with one or more values (which may include an “unknown” value), may represent a root node of a decision tree. This root node may be partitioned based on one of the attributes, such that the concentration (e.g., “purity”) of a relevant outcome (e.g., the rare event) is increased in one node and decreased in another. This process may be repeated until a decision tree with sufficiently pure leaf nodes is created. This “purified” decision tree may then be used to predict one or more rare events.

摘要翻译： 提供系统和方法来预测罕见事件，如住院事件。 每个包含具有一个或多个值的多个属性（可以包括“未知”值）的数据记录集合可以表示决策树的根节点。 这个根节点可以基于其中一个属性进行分区，使得相关结果（例如罕见事件）的浓度（例如，“纯度”）在一个节点中增加并且在另一节点中减小。 可以重复该过程，直到创建具有足够纯叶节点的决策树。 然后可以使用该“纯化”决策树来预测一个或多个罕见事件。

公开(公告)号：US20100068439A1

公开(公告)日：2010-03-18

申请号：US12523832

申请日：2008-01-31

申请人： Phillip Andrew Bullock ,  Peter John Coleman ,  Stephen Derek Jenkins ,  Sanjay Mehta

发明人： Phillip Andrew Bullock ,  Peter John Coleman ,  Stephen Derek Jenkins ,  Sanjay Mehta

IPC分类号： C08L67/00 ,  C08K5/10 ,  C08K5/12 ,  C08K5/15 ,  C08K5/1539 ,  B32B1/00

CPC分类号： C08K5/10 ,  C08K2201/008 ,  Y10T428/1397 ,  C08L67/00

摘要： The present invention relates to a polyester composition having a liquid antiplasticizer. The composition has improved gas barrier properties with reduced degradation and plate out effects on molds and rollers. Other embodiments of the present invention disclosed herein are articles made from the composition and methods to make such articles.

摘要翻译： 本发明涉及具有液体抗增塑剂的聚酯组合物。 该组合物具有改善的气体阻隔性能，降低了模具和辊子的降解和平板效应。 本文公开的本发明的其它实施方案是由制备这种制品的组合物和方法制成的制品。