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    Method of forming a phosphorus doped optical core using a PECVD process
    41.
    发明授权
    Method of forming a phosphorus doped optical core using a PECVD process 失效
    使用PECVD工艺形成掺磷光纤芯的方法

    公开(公告)号：US07080528B2

    公开(公告)日：2006-07-25

    申请号：US10279366

    申请日：2002-10-23

    申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

    发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

    IPC分类号： C03B37/018

    CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

    摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

    摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

    Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
    42.
    发明授权
    Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology 有权
    氢辅助HDP-CVD沉积工艺，用于积极的间隙填充技术

    公开(公告)号：US06808748B2

    公开(公告)日：2004-10-26

    申请号：US10350445

    申请日：2003-01-23

    申请人： Bikram Kapoor ,  M. Ziaul Karim ,  Anchuan Wang

    发明人： Bikram Kapoor ,  M. Ziaul Karim ,  Anchuan Wang

    IPC分类号： C23C1640

    CPC分类号： C23C16/045 ,  C23C16/402 ,  C23C16/45523 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612

    摘要： A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.

    摘要翻译： 一种在相邻的凸起表面之间形成有沟槽的衬底上沉积氧化硅层的方法。 在一个实施例中，氧化硅层形成在多步骤工艺中，其包括通过形成高密度等离子体工艺在衬底上和沟槽内沉积第一部分层，该高密度等离子体工艺具有来自第一工艺气体的同时淀积和溅射组分， 源，氧源和具有高D / S比的氦和/或分子氢，例如10-20，然后，通过形成高密度，在衬底上和沟槽内沉积氧化硅层的第二部分 等离子体工艺，其具有来自第二工艺气体的同时沉积和溅射组分，所述第二工艺气体包括硅源，氧源和具有例如3-10的较低D / S比的分子氢。

    Dry-etch for silicon-and-carbon-containing films
    43.
    发明授权
    Dry-etch for silicon-and-carbon-containing films 有权
    用于含硅和碳的膜的干蚀刻

    公开(公告)号：US08771536B2

    公开(公告)日：2014-07-08

    申请号：US13279998

    申请日：2011-10-24

    申请人： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

    发明人： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/3065 ,  H01L21/31116

    摘要： A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

    摘要翻译： 描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。 含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

    METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS
    44.
    发明申请
    METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS 有权
    金属和金属氧化物膜的蚀刻方法

    公开(公告)号：US20120238103A1

    公开(公告)日：2012-09-20

    申请号：US13416223

    申请日：2012-03-09

    申请人： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

    发明人： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/31116 ,  H01J37/32422 ,  H01L21/31122 ,  H01L21/32136

    摘要： A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

    摘要翻译： 从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟 气体在等离子体产生区域中产生等离子体。 等离子体包括氟自由基和氟离子。 该方法还包括过滤等离子体以提供具有比氟离子更高浓度​​的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。 该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。 反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。

    SELECTIVE ETCH FOR SILICON FILMS
    45.
    发明申请
    SELECTIVE ETCH FOR SILICON FILMS 有权
    硅片的选择性蚀刻

    公开(公告)号：US20110294300A1

    公开(公告)日：2011-12-01

    申请号：US13088930

    申请日：2011-04-18

    申请人： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

    发明人： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/32137 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/32136

    摘要： A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.

    摘要翻译： 描述了蚀刻图案化异质含硅结构的方法，并且包括与现有远程等离子体蚀刻相比具有反向选择性的远程等离子体蚀刻。 这些方法可用于在少量或不含氧化硅的同时去除多晶硅。 更一般地，含有较少氧的含硅膜比含有更多氧的含硅膜更快地除去。 其他示例性应用包括修整硅碳氮化物膜，同时基本上保留碳氧化硅。 诸如这些的应用由本文提供的方法实现，并且实现了新的工艺流程。 预期这些工艺流程对于各种更细的线宽结构是理想的。 本文包含的方法也可以用于比含有较高氮浓度的含氮和硅的膜更快地蚀刻含硅膜。

    Method of forming a phosphorus doped optical core using a PECVD process
    47.
    发明授权
    Method of forming a phosphorus doped optical core using a PECVD process 失效
    使用PECVD工艺形成掺磷光纤芯的方法

    公开(公告)号：US07383702B2

    公开(公告)日：2008-06-10

    申请号：US11422278

    申请日：2006-06-05

    申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

    发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

    IPC分类号： G02B6/10 ,  C03B37/018

    CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

    摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

    摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

    METHOD OF FORMING A PHOSPHORUS DOPED OPTICAL CORE USING A PECVD PROCESS
    49.
    发明申请
    METHOD OF FORMING A PHOSPHORUS DOPED OPTICAL CORE USING A PECVD PROCESS 失效
    使用PECVD工艺形成磷光体光学核心的方法

    公开(公告)号：US20060266081A1

    公开(公告)日：2006-11-30

    申请号：US11422299

    申请日：2006-06-05

    申请人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

    发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

    IPC分类号： C03B37/022 ,  C03B37/018 ,  C03C25/00

    CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

    摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

    摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。