公开(公告)号：US20050008790A1

公开(公告)日：2005-01-13

申请号：US10915781

申请日：2004-08-10

申请人： Bikram Kapoor ,  M. Ziaul Karim ,  Anchuan Wang

发明人： Bikram Kapoor ,  M. Ziaul Karim ,  Anchuan Wang

IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/316 ,  H05H1/24 ,  C23C16/00

CPC分类号： C23C16/045 ,  C23C16/402 ,  C23C16/45523 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612

摘要： A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.

摘要翻译： 一种在相邻的凸起表面之间形成有沟槽的衬底上沉积氧化硅层的方法。 在一个实施例中，氧化硅层形成在多步骤工艺中，其包括通过形成高密度等离子体工艺在衬底上和沟槽内沉积第一部分层，该高密度等离子体工艺具有来自第一工艺气体的同时淀积和溅射组分， 源，氧源和具有高D / S比的氦和/或分子氢，例如10-20，然后通过形成高密度等离子体在衬底上和沟槽内沉积氧化硅层的第二部分 具有来自包含硅源，氧源和低D / S比例如3-10的分子氢的第二工艺气体的同时沉积和溅射组分的方法。

公开(公告)号：US07205240B2

公开(公告)日：2007-04-17

申请号：US10456611

申请日：2003-06-04

申请人： M. Ziaul Karim ,  Bikram Kapoor ,  Anchuan Wang ,  Dong Qing Li ,  Katsunari Ozeki ,  Manoj Vellaikal ,  Zhuang Li

发明人： M. Ziaul Karim ,  Bikram Kapoor ,  Anchuan Wang ,  Dong Qing Li ,  Katsunari Ozeki ,  Manoj Vellaikal ,  Zhuang Li

IPC分类号： C23C16/00

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76837

摘要： A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

摘要翻译： 使用HDP-CVD沉积，蚀刻和沉积步骤的循环来提供间隙填充方法。 第一沉积步骤期间的流动气体包括诸如He的惰性气体，但在剩余沉积步骤期间包括H 2 O 3。 在第一沉积步骤期间流动气体的较高的平均分子量提供了一些限定在蚀刻步骤期间保护它们的间隙的结构。 在剩余沉积步骤期间流动气体的较低平均分子量具有降低的溅射特性，并且在填充间隙的剩余部分时是有效的。

公开(公告)号：US07595088B2

公开(公告)日：2009-09-29

申请号：US10915781

申请日：2004-08-10

申请人： Bikram Kapoor ,  M. Ziaul Karim ,  Anchuan Wang

发明人： Bikram Kapoor ,  M. Ziaul Karim ,  Anchuan Wang

IPC分类号： C23C16/00 ,  C23C16/40 ,  H05H1/24

CPC分类号： C23C16/045 ,  C23C16/402 ,  C23C16/45523 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612

摘要： A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.

摘要翻译： 一种在相邻的凸起表面之间形成有沟槽的衬底上沉积氧化硅层的方法。 在一个实施例中，氧化硅层形成在多步骤工艺中，其包括通过形成高密度等离子体工艺在衬底上和沟槽内沉积第一部分层，该高密度等离子体工艺具有来自第一工艺气体的同时淀积和溅射组分， 源，氧源和具有高D / S比的氦和/或分子氢，例如10-20，然后通过形成高密度等离子体在衬底上和沟槽内沉积氧化硅层的第二部分 具有来自包含硅源，氧源和低D / S比例如3-10的分子氢的第二工艺气体的同时沉积和溅射组分的方法。

公开(公告)号：US06808748B2

公开(公告)日：2004-10-26

申请号：US10350445

申请日：2003-01-23

申请人： Bikram Kapoor ,  M. Ziaul Karim ,  Anchuan Wang

发明人： Bikram Kapoor ,  M. Ziaul Karim ,  Anchuan Wang

IPC分类号： C23C1640

CPC分类号： C23C16/045 ,  C23C16/402 ,  C23C16/45523 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612

摘要： A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.

摘要翻译： 一种在相邻的凸起表面之间形成有沟槽的衬底上沉积氧化硅层的方法。 在一个实施例中，氧化硅层形成在多步骤工艺中，其包括通过形成高密度等离子体工艺在衬底上和沟槽内沉积第一部分层，该高密度等离子体工艺具有来自第一工艺气体的同时淀积和溅射组分， 源，氧源和具有高D / S比的氦和/或分子氢，例如10-20，然后，通过形成高密度，在衬底上和沟槽内沉积氧化硅层的第二部分 等离子体工艺，其具有来自第二工艺气体的同时沉积和溅射组分，所述第二工艺气体包括硅源，氧源和具有例如3-10的较低D / S比的分子氢。

公开(公告)号：US07628897B2

公开(公告)日：2009-12-08

申请号：US10660813

申请日：2003-09-12

申请人： Hemant P. Mungekar ,  Anjana M. Patel ,  Manoj Vellaikal ,  Anchuan Wang ,  Bikram Kapoor

发明人： Hemant P. Mungekar ,  Anjana M. Patel ,  Manoj Vellaikal ,  Anchuan Wang ,  Bikram Kapoor

IPC分类号： C23C14/35 ,  C23C16/00 ,  H01L21/311

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633

摘要： A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.

摘要翻译： 将膜沉积在设置在基板处理室中的基板上。 衬底具有形成在相邻的凸起表面之间的沟槽。 膜的第一部分通过化学气相沉积从流入处理室的第一气态混合物沉积在衬底上。 此后，通过使具有卤素前体，氢前体和氧前体的蚀刻剂气体流入处理室来蚀刻第一部分。 此后，膜的第二部分通过化学气相沉积从流过处理室的第二气态混合物沉积在衬底上。

公开(公告)号：US06890597B2

公开(公告)日：2005-05-10

申请号：US10435296

申请日：2003-05-09

申请人： Padmanabhan Krishnaraj ,  Bruno Geoffrion ,  Michael S. Cox ,  Lin Zhang ,  Bikram Kapoor ,  Anchuan Wang ,  Zhenjiang Cui

发明人： Padmanabhan Krishnaraj ,  Bruno Geoffrion ,  Michael S. Cox ,  Lin Zhang ,  Bikram Kapoor ,  Anchuan Wang ,  Zhenjiang Cui

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40

CPC分类号： C23C16/45502 ,  C23C16/45591 ,  C23C16/56

摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.

摘要翻译： 沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。 通过在衬底上变化的工艺来进行沉积和抛光。 不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。 在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。

公开(公告)号：US08999856B2

公开(公告)日：2015-04-07

申请号：US13416277

申请日：2012-03-09

申请人： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

发明人： Jingchun Zhang ,  Anchuan Wang ,  Nitin Ingle

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31116 ,  C09K13/00 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069

摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.

摘要翻译： 从包括氮化硅层和氧化硅层的衬底中选择性地蚀刻氮化硅的方法包括将含氟气体流入衬底处理室的等离子体产生区域并向含氟气体施加能量以产生等离子体 在等离子体产生区域中。 等离子体包括氟自由基和氟离子。 该方法还包括过滤等离子体以提供具有比氟离子更高浓度​​的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。 该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。 反应气体以比反应气体更高的蚀刻速率蚀刻氮化硅层蚀刻氧化硅层。

公开(公告)号：US20130034968A1

公开(公告)日：2013-02-07

申请号：US13279998

申请日：2011-10-24

申请人： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

发明人： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/31116

摘要： A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

摘要翻译： 描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。 含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

公开(公告)号：US20100099236A1

公开(公告)日：2010-04-22

申请号：US12437256

申请日：2009-05-07

申请人： Young Soo Kwon ,  Bi Jang ,  Anchuan Wang ,  Young S. Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Jin Ho Jeon

发明人： Young Soo Kwon ,  Bi Jang ,  Anchuan Wang ,  Young S. Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Jin Ho Jeon

IPC分类号： H01L21/762 ,  H01L21/31

CPC分类号： H01L21/76224 ,  H01L21/02112 ,  H01L21/02247 ,  H01L21/02304 ,  H01L21/318

摘要： A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.

摘要翻译： 描述了填充沟槽的方法，并且包括在含氟蚀刻化学中沉积具有高比率的氧化硅与介电衬里蚀刻速率的介电衬垫。 氧化硅沉积在沟槽内并蚀刻以重新打开或加宽沟槽顶部附近的间隙。 电介质衬垫在蚀刻工艺期间保护下面的衬底，从而可以使间隙更宽。 氧化硅再次沉积在沟槽内以基本上填充沟槽。

公开(公告)号：US20100041207A1

公开(公告)日：2010-02-18

申请号：US12193162

申请日：2008-08-18

申请人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

发明人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

IPC分类号： H01L21/762

CPC分类号： H01L21/76224 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.

摘要翻译： 将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。 该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分， 的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。