公开(公告)号：US20230251567A1

公开(公告)日：2023-08-10

申请号：US18121700

申请日：2023-03-15

申请人： Tokyo Electron Limited

发明人： Ryutaro SUDA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Taiki MIURA ,  Jaeyoung PARK ,  Yusuke FUKUNAGA

IPC分类号： G03F1/80 ,  H01J37/32 ,  G03F7/075

CPC分类号： G03F1/80 ,  G03F7/075 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32798 ,  H01J2237/334

摘要： An etching method comprises (a) providing a substrate in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film; and (b) etching the silicon-containing film, including (b-1) etching the silicon-containing film using plasma generated from a first process gas, the first process gas containing a hydrogen fluoride gas and a reaction control gas to control a reaction between hydrogen fluoride and the silicon-containing film, the first process gas containing, as the reaction control gas, at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction, and (b-2) etching the silicon-containing film using plasma generated from a second process gas, the second process gas containing a hydrogen fluoride gas, and containing at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction.

公开(公告)号：US20230230844A1

公开(公告)日：2023-07-20

申请号：US18121029

申请日：2023-03-14

申请人： Tokyo Electron Limited

发明人： Maju TOMURA ,  Yoshihide KIHARA ,  Masanobu HONDA

IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H01L21/31116 ,  H01L21/3065 ,  H01L21/31144 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32091 ,  H01J2237/3346

摘要： A technique improves etch selectivity. An etching includes (a) providing, in a chamber, a substrate including an underlying film and a silicon-containing film on the underlying film, (b) etching the silicon-containing film to form a recess with first plasma generated from a first process gas containing a hydrogen fluoride gas until before the underlying film is exposed at the recess or until the underlying film is partly exposed at the recess, and (c) further etching the silicon-containing film at the recess under a condition different from a condition of (b).

公开(公告)号：US20230215691A1

公开(公告)日：2023-07-06

申请号：US18121608

申请日：2023-03-15

申请人： Tokyo Electron Limited

发明人： Ryutaro SUDA ,  Takatoshi ORUI ,  Kae KUMAGAI ,  Maju TOMURA ,  Yoshihide KIHARA

IPC分类号： H01J37/32

CPC分类号： H01J37/32082 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32798 ,  H01J2237/334

摘要： A technique increases verticality in etching. An etching method is a method for etching a target film with a plasma processing apparatus including a chamber and a substrate support located in the chamber to support a substrate, the substrate support holding a substrate that includes the target film, the target film including a patterned mask film having at least one opening. The etching method includes supplying a process gas containing an HF gas into the chamber, and etching the target film by: generating plasma from the process gas in the chamber with radio-frequency power having a first frequency, and applying a pulsed voltage periodically to the substrate support at a second frequency lower than the first frequency.

公开(公告)号：US20230197458A1

公开(公告)日：2023-06-22

申请号：US18113078

申请日：2023-02-23

申请人： Tokyo Electron Limited

发明人： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

摘要： An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20220165578A1

公开(公告)日：2022-05-26

申请号：US17398013

申请日：2021-08-10

申请人： Tokyo Electron Limited

发明人： Maju TOMURA ,  Satoshi OHUCHIDA ,  Yoshihide KIHARA

IPC分类号： H01L21/311 ,  H01L21/683 ,  H01J37/32

摘要： A method including providing a substrate in a process chamber of a substrate processing apparatus, the substrate having a first region containing a silicon oxide film and a second region containing a film other than the silicon oxide film; adsorbing hydrogen fluoride on the substrate; and exposing the substrate with the absorbed hydrogen fluoride to plasma generated from an inert gas to selectively etch the first region with respect to the second region.

公开(公告)号：US20220148884A1

公开(公告)日：2022-05-12

申请号：US17517723

申请日：2021-11-03

申请人： Tokyo Electron Limited

发明人： Takatoshi ORUI ,  Ryutaro SUDA ,  Maju TOMURA ,  Yoshihide KIHARA

IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01J37/32

摘要： An etching method that is disclosed includes providing a substrate into a chamber. The substrate has a silicon-containing film including a silicon nitride film. The etching method includes generating plasma from a processing gas in the chamber to etch the silicon-containing film. The processing gas includes a fluorine-containing gas and a boron-containing gas. In the etching, a temperature of a substrate support supporting the substrate is set to a temperature of less than 0° C.

公开(公告)号：US20190198321A1

公开(公告)日：2019-06-27

申请号：US16232243

申请日：2018-12-26

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihide KIHARA ,  Takahiro YOKOYAMA

IPC分类号： H01L21/033 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L21/0338 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31116

摘要： A film forming method includes placing a substrate formed with a pattern on a pedestal provided in a space configured to perform a plasma processing therein under a reduced pressure environment; supplying radio-frequency electric power using an upper electrode disposed to face the pedestal in the space; and repeatedly executing a sequence including forming a film on the pattern of the substrate and cleaning the space by supplying electric power only to the upper electrode so as to generate plasma in the space.

公开(公告)号：US20190189493A1

公开(公告)日：2019-06-20

申请号：US16322863

申请日：2017-08-01

申请人： TOKYO ELECTRON LIMITED

发明人： Shuhei OGAWA ,  Keigo TOYODA ,  Yoshihide KIHARA

IPC分类号： H01L21/683 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/67 ,  H01J37/32

CPC分类号： H01L21/6833 ,  H01J37/32715 ,  H01J2237/20214 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31116 ,  H01L21/3213 ,  H01L21/67069 ,  H01L21/768 ,  H05H1/46

摘要： A method according to an embodiment includes: (a) a first step of etching a workpiece held by a holding structure in a state in which a first direction and a second direction are maintained to form a first angle, by a plasma generated in a processing container; and (a) a second step of, after execution of the first step, etching the workpiece held by the holding structure in a state in which the first direction and the second direction are maintained to form a second angle, by the plasma generated in the processing container.

公开(公告)号：US20190131141A1

公开(公告)日：2019-05-02

申请号：US16089071

申请日：2017-03-27

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihide KIHARA ,  Toru HISAMATSU

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32139

摘要： In an embodiment, a wafer W includes a layer EL to be etched and a mask MK4 provided on the layer EL to be etched, and a method MT of an embodiment, the layer EL to be etched is etched by removing the layer EL to be etched for each atomic layer, by repeating sequence SQ3 including step ST9a of irradiating the mask MK4 with secondary electrons by generating plasma and applying a DC voltage to an upper electrode 30 of a parallel plate electrode, and covering the mask MK4 with silicon oxide compound, step ST9b of generating plasma of fluorocarbon-based gas and forming a mixed layer MX2 including radicals on an atomic layer of the layer EL to be etched, and ST9d of generating plasma of Ar gas and applying a bias voltage to remove the mixed layer MX2.

公开(公告)号：US20190080929A1

公开(公告)日：2019-03-14

申请号：US16127468

申请日：2018-09-11

申请人： TOKYO ELECTRON LIMITED

发明人： Yu NAGATOMO ,  Yoshihide KIHARA

IPC分类号： H01L21/3213 ,  H01L21/285

摘要： In a method of an embodiment, a tungsten film is formed on a workpiece. The workpiece includes an underlying film and a mask provided on the underlying film. The tungsten film has a first region extending along the side wall surface of the mask that defines an opening, and a second region extending on the underlying film. Subsequently, the tungsten film is plasma-etched while leaving the first region. In forming the tungsten film, a precursor gas containing tungsten is supplied to the workpiece. Then, plasma of hydrogen gas is generated in order to supply hydrogen active species to the precursor on the workpiece.