公开(公告)号：US20090026588A1

公开(公告)日：2009-01-29

申请号：US12005683

申请日：2007-12-28

申请人： Kotaro Miyatani ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Kotaro Miyatani ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： C23C16/45574 ,  C23C16/36 ,  C23C16/511 ,  C23C16/56 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/3148 ,  H01L21/3185

摘要： A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of “b=2×a·2”), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.

摘要翻译： 一种使用由等离子体处理的气体在基板上形成膜的等离子体处理方法。 用于形成膜的等离子体处理方法包括以下步骤：通过使用CaFb气体在基板上形成CF膜（这里，a为计数数，b为满足式“b = 2×2a “），用等离子体处理的气体处理CF膜，并在通过使用用等离子体处理的绝缘材料处理的CF膜上形成绝缘膜。

公开(公告)号：US08197913B2

公开(公告)日：2012-06-12

申请号：US12008770

申请日：2008-01-14

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H05H1/24

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.

摘要翻译： 本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体 与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。

公开(公告)号：US08435882B2

公开(公告)日：2013-05-07

申请号：US12452784

申请日：2008-07-24

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L21/4763

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention may be a semiconductor device including of a fluorinated insulating film and a SiCN film deposited on the fluorinated insulating film directly, wherein a density of nitrogen in the SiCN film decreases from interface between the fluorinated insulating film and the SiCN film. In the present invention, the SiCN film that is highly fluorine-resistant near the interface with the CFx film and has a low dielectric constant as a whole can be formed as a hard mask.

摘要翻译： 本发明可以是包括直接沉积在氟化绝缘膜上的氟化绝缘膜和SiCN膜的半导体器件，其中SiCN膜中的氮密度从氟化绝缘膜和SiCN膜之间的界面减小。 在本发明中，作为硬掩模，可以形成与CFx膜的界面附近具有高介电常数的SiCN膜作为整体的低介电常数。

公开(公告)号：US08021975B2

公开(公告)日：2011-09-20

申请号：US12005683

申请日：2007-12-28

申请人： Kotaro Miyatani ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Kotaro Miyatani ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/4763

CPC分类号： C23C16/45574 ,  C23C16/36 ,  C23C16/511 ,  C23C16/56 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/3148 ,  H01L21/3185

摘要： A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of “b=2×a−2”), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.

摘要翻译： 一种使用由等离子体处理的气体在基板上形成膜的等离子体处理方法。 用于形成膜的等离子体处理方法包括以下步骤：通过使用CaFb气体在基板上形成CF膜（这里，a是计数数，b是满足式“b = 2×a -2“），用等离子体处理的气体处理CF膜，并在通过使用用等离子体处理的绝缘材料处理的CF膜上形成绝缘膜。

公开(公告)号：US20100025856A1

公开(公告)日：2010-02-04

申请号：US12531519

申请日：2008-03-28

申请人： Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Kohei Kawamura ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L21/31144 ,  C23C16/26 ,  H01L21/02074 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/76808 ,  H01L21/76883 ,  Y10S438/951

摘要： A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a metal film on the internal insulation film; (c) etching the metal film according to a pattern to form a hard mask; (d) forming a concave part in the fluorine-doped carbon film by etching the fluorine-doped carbon film using the hard mask; (e) forming a film formation of a wiring material on the substrate for filling the concave part with the wiring material; (f) removing an excess part of the wiring material and the hard mask on the fluorine-doped carbon film for exposing a surface of the fluorine-doped carbon film; and (g) removing an oxide formed on the surface of the fluorine-doped film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）形成具有碳和氟的气体的等离子体，以及使用等离子体形成在基板上形成的氟掺杂碳膜的内部绝缘膜; （b）在内部绝缘膜上形成金属膜; （c）根据图案蚀刻金属膜以形成硬掩模; （d）通过使用硬掩模蚀刻氟掺杂碳膜，在氟掺杂碳膜中形成凹部; （e）在所述基板上形成布线材料，以用所述布线材料填充所述凹部; （f）除去氟掺杂碳膜上的布线材料和硬掩模的多余部分，以暴露氟掺杂碳膜的表面; 和（g）去除在氟掺杂膜的表面上形成的氧化物。

公开(公告)号：US09117764B2

公开(公告)日：2015-08-25

申请号：US13819038

申请日：2011-07-29

申请人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

发明人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

IPC分类号： H01L21/302 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20

CPC分类号： H01L21/3081 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/2041 ,  H01J37/32192 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31122

摘要： A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

摘要翻译： 在作为被处理基板的硅基板上形成氟碳层（步骤A）。 在这样形成的碳氟化合物层上形成抗蚀剂层（步骤B）。 然后，通过使抗蚀剂层通过光致抗蚀剂层曝光（步骤C）将抗蚀剂层图案化为预定的形状。 使用图案化为预定形状的抗蚀剂层作为掩模来蚀刻氟碳层（步骤D）。 接下来，除去作为掩模的抗蚀剂层（步骤E）。 之后，使用残留的氟碳层作为掩模蚀刻硅衬底（步​​骤F）。 由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。

公开(公告)号：US20140080307A1

公开(公告)日：2014-03-20

申请号：US14000643

申请日：2012-02-20

申请人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

发明人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

IPC分类号： H01L21/306 ,  H01L21/308

CPC分类号： H01L21/30604 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719

摘要： A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

摘要翻译： 当在基板上刻蚀膜时，用于形成用作掩模的预定图案的图案形成方法包括以下步骤：在待处理的膜上形成有机膜图案的有机膜图案形成步骤; 在有机膜图案上形成氮化硅膜; 蚀刻氮化硅膜，使得氮化硅膜仅保留在有机膜图案的侧壁部分上; 除去有机膜，从而在基板上形成预定的氮化硅膜图案。 在基板的温度保持不超过100℃的条件下，成膜步骤激发处理气体并产生等离子体，用等离子体进行等离子体处理，形成压力不超过100的氮化硅膜 MPa。

公开(公告)号：US20130330928A1

公开(公告)日：2013-12-12

申请号：US13978438

申请日：2012-01-05

申请人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

发明人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

IPC分类号： H01L21/67 ,  H01L21/308

CPC分类号： H01L21/67069 ,  G03F7/16 ,  H01L21/0274 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/6715 ,  H01L21/67207 ,  H01L21/67225

摘要： A substrate processing system of forming a resist pattern having a molecular resist of a low molecular compound on a substrate includes a film forming device configured to form a resist film on the substrate; an exposure device configured to expose the formed resist film; and a developing device configured to develop the exposed resist film. The film forming device includes a processing chamber configured to accommodate therein the substrate; a holding table that is provided in the processing chamber and configured to hold the substrate thereon; a resist film deposition head configured to supply a vapor of the molecular resist to the substrate held on the holding table; and a depressurizing device configured to depressurize an inside of the processing chamber to a vacuum atmosphere.

摘要翻译： 在基板上形成具有低分子化合物的分子抗蚀剂的抗蚀剂图案的基板处理系统包括：在基板上形成抗蚀剂膜的成膜装置; 曝光装置，被配置为暴露所形成的抗蚀剂膜; 以及显影装置，其被配置为显影所述曝光的抗蚀剂膜。 成膜装置包括：处理室，其构造成在其中容纳基板; 保持台，设置在所述处理室中并且被配置为将所述基板保持在其上; 抗蚀剂膜沉积头，被配置为将分子抗蚀剂的蒸气供应到保持在保持台上的基板; 以及减压装置，其构造成将处理室的内部减压至真空气氛。

公开(公告)号：US20110053375A1

公开(公告)日：2011-03-03

申请号：US12863362

申请日：2009-01-09

申请人： Hiraku Ishikawa ,  Takaaki Matsuoka

发明人： Hiraku Ishikawa ,  Takaaki Matsuoka

IPC分类号： H01L21/3205 ,  C07F7/10 ,  C07F7/18 ,  C01B33/00

CPC分类号： H01L21/3105 ,  C23C16/042 ,  C23C16/24 ,  C23C16/26 ,  H01L21/02063 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3146 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76835

摘要： A method for processing an amorphous carbon film which has been formed on a substrate and wet-cleaned after being dry-etched includes preparing the substrate having the wet-cleaned amorphous carbon film and modifying a surface of the amorphous carbon film, before forming an upper layer on the wet-cleaned amorphous carbon film.

摘要翻译： 用于处理已经形成在基底上并在干蚀刻后进行湿清洗的无定形碳膜的方法包括制备具有湿清洁的无定形碳膜并修饰无定形碳膜的表面的基底，然后形成上层 在湿清洁的无定形碳膜上。

公开(公告)号：US20100244204A1

公开(公告)日：2010-09-30

申请号：US12301902

申请日：2007-05-11

申请人： Takaaki Matsuoka ,  Masahiro Horigome

发明人： Takaaki Matsuoka ,  Masahiro Horigome

IPC分类号： H01L23/58 ,  H01L21/469

CPC分类号： H01L21/3127 ,  C23C16/26 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/0212 ,  H01L21/02274

摘要： Provided is a technology capable of obtaining a fluorine-containing carbon film having a good leakage property, coefficient of thermal expansion and mechanical strength. The fluorine-containing carbon film is formed by using active species obtained by activating a C5F8 gas and a hydrogen gas. Fluorine in the fluorine-containing carbon film comes off together with H so that the amount of F decreases, thereby accelerating the polymerization. As a result, a C-dangling bond in the fluorine-containing carbon is decreased and a leakage current is reduced. Further, as the polymerization accelerates, the film gets stronger, so that the fluorine-containing carbon film having a high mechanical strength such as a high elasticity or a high hardness can be obtained.

摘要翻译： 提供了能够获得具有良好的泄漏特性，热膨胀系数和机械强度的含氟碳膜的技术。 通过使用通过活化C5F8气体和氢气而获得的活性物质形成含氟碳膜。 含氟碳膜中的氟与H一起脱落，使F的量降低，从而促进聚合。 结果，含氟碳中的C悬空键降低，漏电流降低。 此外，随着聚合加速，膜变得更强，从而可以获得具有高机械强度如高弹性或高硬度的含氟碳膜。