公开(公告)号：US11527490B2

公开(公告)日：2022-12-13

申请号：US17070582

申请日：2020-10-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsien-Wei Chen ,  Tsung-Yuan Yu ,  Ming-Da Cheng ,  Wen-Hsiung Lu

IPC: H01L23/544 ,  H01L21/78 ,  H01L23/00 ,  H01L21/56 ,  H01L23/58 ,  H01L23/31

Abstract: Packaging devices and methods of manufacture thereof for semiconductor devices are disclosed. In some embodiments, a method of manufacturing a packaging device includes forming an interconnect wiring over a substrate, and forming conductive balls over portions of the interconnect wiring. A molding material is deposited over the conductive balls and the substrate, and a portion of the molding material is removed from over scribe line regions of the substrate.

公开(公告)号：US20220278031A1

公开(公告)日：2022-09-01

申请号：US17663970

申请日：2022-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Wen Hsiao ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Chen-Shien Chen ,  Chih-Hua Chen ,  Chen-Cheng Kuo

IPC: H01L23/498 ,  H01L21/683 ,  H01L23/31 ,  H01L25/10

Abstract: A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A conductive region is disposed in the polymer region and electrically coupled to the redistribution line. The conductive region includes a second flat top surface not higher than the first flat top surface.

公开(公告)号：US20220262694A1

公开(公告)日：2022-08-18

申请号：US17318703

申请日：2021-05-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Shien Chen ,  Kuo-Ching Hsu ,  Wei-Hung Lin ,  Hui-Min Huang ,  Ming-Da Cheng ,  Mirng-Ji Lii

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/538

Abstract: A method includes forming a reconstructed package substrate, which includes placing a plurality of substrate blocks over a carrier, encapsulating the plurality of substrate blocks in an encapsulant, planarizing the encapsulant and the plurality of substrate blocks to reveal redistribution lines in the plurality of substrate blocks, and forming a redistribution structure overlapping both of the plurality of substrate blocks and encapsulant. A package component is bonded over the reconstructed package substrate.

公开(公告)号：US11264342B2

公开(公告)日：2022-03-01

申请号：US16733609

申请日：2020-01-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Chung-Shi Liu ,  Ming-Da Cheng ,  Mirng-Ji Lii ,  Meng-Tse Chen ,  Wei-Hung Lin

IPC: H01L23/00 ,  H01L21/56 ,  H01L25/10 ,  H01L23/31 ,  H01L25/03 ,  H01L25/00 ,  H01L23/498 ,  B23K35/00 ,  B23K35/02 ,  B23K35/22 ,  B23K35/26 ,  B23K35/36 ,  H01L25/065

Abstract: Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.

公开(公告)号：US20210288009A1

公开(公告)日：2021-09-16

申请号：US17333187

申请日：2021-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Da Cheng ,  Yung-Ching Chao ,  Chun Kai Tzeng ,  Cheng Jen Lin ,  Chin Wei Kang ,  Yu-Feng Chen ,  Mirng-Ji Lii

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/31

Abstract: A method of forming an integrated circuit structure includes forming a patterned passivation layer over a metal pad, with a top surface of the metal pad revealed through a first opening in the patterned passivation layer, and applying a polymer layer over the patterned passivation layer. The polymer layer is substantially free from N-Methyl-2-pyrrolidone (NMP), and comprises aliphatic amide as a solvent. The method further includes performing a light-exposure process on the polymer layer, performing a development process on the polymer layer to form a second opening in the polymer layer, wherein the top surface of the metal pad is revealed to the second opening, baking the polymer, and forming a conductive region having a via portion extending into the second opening.

公开(公告)号：US11094655B2

公开(公告)日：2021-08-17

申请号：US16439957

申请日：2019-06-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chang-Jung Hsueh ,  Chin-Wei Kang ,  Hui-Min Huang ,  Wei-Hung Lin ,  Cheng-Jen Lin ,  Ming-Da Cheng ,  Chien-Chun Wang

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/00 ,  H01L21/683

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a seed layer over a substrate and forming a first mask layer over the seed layer. The method also includes forming a first trench and a second trench in the first mask layer and forming a first conductive material in the first trench and the second trench. The method further includes forming a second mask layer in the first trench and over the first conductive material, and forming a second conductive material in the second trench and on the first conductive material. A first conductive connector is formed in the first trench with a first height, a second conductive connector is formed in the second trench with a second height, and the second height is greater than the first height.

公开(公告)号：US11049832B2

公开(公告)日：2021-06-29

申请号：US16876371

申请日：2020-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hao-Jan Pei ,  Chih-Chiang Tsao ,  Wei-Yu Chen ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Ching-Hua Hsieh ,  Chung-Shi Liu

IPC: H01L23/00 ,  H01L21/00 ,  H01L25/10 ,  H01L23/29 ,  H01L21/56 ,  H01L23/31 ,  H01L21/683 ,  H01L25/11

Abstract: A method for forming a package structure is provided. The method includes forming a protective layer to surround a semiconductor die and forming a conductive structure over the protective layer. The method also includes disposing a polymer-containing material over the protective layer to partially surround the conductive structure. The method further includes curing the polymer-containing material to form a warpage-control element.

公开(公告)号：US20210028124A1

公开(公告)日：2021-01-28

申请号：US17070582

申请日：2020-10-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsien-Wei Chen ,  Tsung-Yuan Yu ,  Ming-Da Cheng ,  Wen-Hsiung Lu

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/56 ,  H01L23/58 ,  H01L23/544

Abstract: Packaging devices and methods of manufacture thereof for semiconductor devices are disclosed. In some embodiments, a method of manufacturing a packaging device includes forming an interconnect wiring over a substrate, and forming conductive balls over portions of the interconnect wiring. A molding material is deposited over the conductive balls and the substrate, and a portion of the molding material is removed from over scribe line regions of the substrate.

公开(公告)号：US10700033B2

公开(公告)日：2020-06-30

申请号：US16101871

申请日：2018-08-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chang-Chia Huang ,  Tsung-Shu Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Bor-Rung Su

IPC: H01L23/00 ,  H01L23/482 ,  H01L23/498 ,  H01L21/56 ,  H01L21/768 ,  H01L21/28 ,  H01L23/538 ,  H01L21/302 ,  H01L23/48

Abstract: The present disclosure relates a method of forming an integrated chip packaging device. In some embodiments, the method may be performed by forming a conductive trace on a surface of a packaging component. The conductive trace has an angled surface defining an undercut. A molding material is deposited over an entirety of the conductive trace and within the undercut. The molding material is removed from an upper surface of the conductive trace. The molding material has a sloped outermost sidewall after removing the molding material from the upper surface. A solder region is formed on the upper surface of the conductive trace.

公开(公告)号：US10665565B2

公开(公告)日：2020-05-26

申请号：US16221986

申请日：2018-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Jen Lin ,  Tsung-Ding Wang ,  Chien-Hsiun Lee ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L21/768 ,  H01L23/525

Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a bump structure disposed on a first substrate and a molding compound in physical contact with the bump structure. The bump structure protrudes from the molding compound. A conductive region is on a second substrate and contacts the bump structure. A no-flow underfill (NUF) material is vertically between the molding compound and the second substrate and laterally surrounds the bump structure. The NUF material is separated from the molding compound.