公开(公告)号：US20080315089A1

公开(公告)日：2008-12-25

申请号：US12151500

申请日：2008-05-07

申请人： Hiroshi Yasuda ,  Takeshi Haraguchi ,  Yoshihisa Ooae ,  Takamasa Satoh ,  Yoshinori Terui ,  Seiichi Sakawa ,  Ryozo Nonogaki

发明人： Hiroshi Yasuda ,  Takeshi Haraguchi ,  Yoshihisa Ooae ,  Takamasa Satoh ,  Yoshinori Terui ,  Seiichi Sakawa ,  Ryozo Nonogaki

IPC分类号： H01J3/02

CPC分类号： H01J37/073 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/3175

摘要： An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.

摘要翻译： 电子枪包括被配置为发射电子的电子源。 电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。 电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上，并被与电子源不同的材料覆盖。 电子枪通过向尖端施加电场而发射热场发射的电子，同时保持足够低的温度以避免电子源的材料的升华。 电子源的材料可以是六硼化镧（LaB 6）或六硼化铈（CeB 6）。 电子发射限制区域可以被碳覆盖。

公开(公告)号：US5969365A

公开(公告)日：1999-10-19

申请号：US917464

申请日：1997-08-26

申请人： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

发明人： Akio Takemoto ,  Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda ,  Takamasa Satoh ,  Hideki Nasuno ,  Hidefumi Yabara ,  Kenichi Kawakami ,  Kiichi Sakamoto ,  Tomohiro Sakazaki ,  Isamu Seto ,  Masami Takigawa ,  Tatsuro Ohkawa

IPC分类号： G21K5/10 ,  H01J37/08 ,  H01J37/302 ,  H01J37/304

CPC分类号： H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/024 ,  H01J2237/1502 ,  H01J2237/1504 ,  H01J2237/216 ,  H01J2237/30472

摘要： A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.

公开(公告)号：US4586141A

公开(公告)日：1986-04-29

申请号：US536322

申请日：1983-09-27

申请人： Hiroshi Yasuda ,  Haruo Tsuchikawa ,  Junichi Kai ,  Koichi Kobayashi

发明人： Hiroshi Yasuda ,  Haruo Tsuchikawa ,  Junichi Kai ,  Koichi Kobayashi

IPC分类号： H01J37/305 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  G06F15/62

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01L21/30 ,  H01J2237/31764 ,  H01J2237/31776

摘要： An electron beam exposure system and method which varies beam size from pattern to pattern corresponding to the accuracy required for each pattern. In order to improve the throughput of the exposer, the beam size is adjusted to the maximum size useable for each pattern. The pattern is divided into rectangles equal to the maximum beam size determined by the pattern size or the accuracy required for the pattern. If a residual part of the pattern smaller than a rectangle remains, the rectangles are adjusted to be smaller than the maximum beam size, so the entire area of the pattern can be divided into equal size rectangles. The pitch and size of the beam are adjusted to this new beam size and exposure is repeated according to the new size rectangles. To increase the processing speed, all the patterns to be exposed in one process are checked as to their size and required accuracy, and the data necessary for the pattern generation such as beam size, pitch and number of exposures are calculated in advance and stored in a memory of a beam controller.

摘要翻译： 一种电子束曝光系统和方法，其根据每种图案所需的精度将光束尺寸从图案变化到图案。 为了提高曝光机的吞吐量，将光束尺寸调整到每个图案可用的最大尺寸。 该图案被分成等于由图案尺寸或图案所需精度确定的最大光束尺寸的矩形。 如果小于矩形的图案的剩余部分保留，则矩形被调整为小于最大光束尺寸，因此图案的整个区域可以被划分成相等尺寸的矩形。 光束的间距和尺寸被调整到这个新的光束尺寸，并且根据新的尺寸矩形重复曝光。 为了提高处理速度，将检查在一个处理中暴露的所有图案的尺寸和所需的精度，并且预先计算诸如光束尺寸，间距和曝光次数的图案生成所需的数据并存储在 光束控制器的存储器。

公开(公告)号：US08222619B2

公开(公告)日：2012-07-17

申请号：US12586717

申请日：2009-09-25

申请人： Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

发明人： Akio Yamada ,  Hiroshi Yasuda ,  Mitsuhiro Nakano ,  Takashi Kiuchi

IPC分类号： A61N5/00 ,  G21G5/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/24507 ,  H01J2237/24521 ,  H01J2237/24535 ,  H01J2237/24542

摘要： A multi-column electron beam exposure apparatus includes: a plurality of column cells; a wafer stage including an electron-beam-property detecting unit for measuring an electron beam property; and a controller for measuring beam properties of electron beams used in all the column cells by using the electron-beam-property detecting unit, and for adjusting the electron beams of the respective column cells so that the properties of the electron beams used in the column cells may be approximately identical. The electron beam property may be any of a beam position, a beam intensity, and a beam shape of the electron beam to be emitted. The electron-beam-property detecting unit may be a chip for calibration with a reference mark formed thereon or a Faraday cup.

摘要翻译： 多列电子束曝光装置包括：多个柱单元; 包括用于测量电子束特性的电子束特性检测单元的晶片台; 以及用于通过使用电子束特性检测单元来测量在所有列单元中使用的电子束的光束特性的控制器，并且用于调节各列电池的电子束，使得在列中使用的电子束的性质 细胞可以大致相同。 电子束特性可以是要发射的电子束的光束位置，光束强度和光束形状中的任何一个。 电子束特性检测单元可以是用于在其上形成有参考标记的校准芯片或法拉第杯。

公开(公告)号：US20110226967A1

公开(公告)日：2011-09-22

申请号：US13068995

申请日：2011-05-25

申请人： Akio Yamada ,  Tomohiro Sakazaki ,  Hiroshi Yasuda

发明人： Akio Yamada ,  Tomohiro Sakazaki ,  Hiroshi Yasuda

IPC分类号： G21K5/00

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： An electron beam lithography apparatus includes a storage for storing data on a drawing pattern assigned a rank based on an accuracy required for a device pattern, a drawing pattern adjustment unit to generate data on divided drawing patterns based on the rank, a settlement wait time adjustment unit to determine a settlement wait time based on the rank, and a controller to draw the device pattern while irradiating an electron beam based on the data on the divided drawing patterns and the settlement wait time. The drawing pattern adjustment unit determines upper limits on the long-side length of a divided drawing pattern or on the area of the divided drawing pattern based on the rank, and divides the drawing pattern based on the upper limits.

摘要翻译： 一种电子束光刻设备，包括：存储器，用于根据设备图案所要求的准确度，对分配了等级的绘图图形进行数据存储;绘图模式调整单元，基于该等级生成分割图形的数据;结算等待时间调整 基于等级确定结算等待时间的单元，以及基于划分的绘图图案和结算等待时间的数据来照射电子束时绘制设备图案的控制器。 绘制图案调整单元基于等级来确定分割绘制图案的长边长度的上限或划分的绘制图案的区域的上限，并且基于上限划分绘图图案。

公开(公告)号：US07847272B2

公开(公告)日：2010-12-07

申请号：US11235422

申请日：2005-09-26

申请人： Hiroshi Yasuda ,  Akio Yamada

发明人： Hiroshi Yasuda ,  Akio Yamada

IPC分类号： A61N5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J2237/31769

摘要： An electron beam exposure system is designed to correct a proximity effect. The electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions that are arranged so that sizes of the opening portions change at a predetermined rate in order of arrangement; a mask deflection unit for deflecting the electron beam on the electron beam exposure mask; a substrate deflection unit for deflecting and projecting the electron beam onto a substrate; and a control unit for controlling deflection amounts in the mask deflection unit and the substrate deflection unit. The direction or directions of the change may be any one of a row direction and a column direction or may be the row and column directions.

摘要翻译： 电子束曝光系统设计用于校正邻近效应。 电子束曝光系统包括：用于产生电子束的电子束产生单元; 电子束曝光掩模，其具有开口部，其设置成使得开口部的尺寸按照布置的顺序以预定的速率变化; 用于使电子束在电子束曝光掩模上偏转的掩模偏转单元; 用于将电子束偏转和投影到衬底上的衬底偏转单元; 以及用于控制掩模偏转单元和基板偏转单元中的偏转量的控制单元。 改变的方向或方向可以是行方向和列方向中的任何一个，或者可以是行和列方向。

公开(公告)号：US5134300A

公开(公告)日：1992-07-28

申请号：US751588

申请日：1991-08-22

申请人： Junichi Kai ,  Hiroshi Yasuda ,  Kazutaka Taki

发明人： Junichi Kai ,  Hiroshi Yasuda ,  Kazutaka Taki

IPC分类号： H01J37/302

CPC分类号： H01J37/3026

摘要： A charged particle beam exposure system employs a continuously moving stage technique and a double deflection technique. The system stably deflects charged particle beams and reliably exposes a sample to the beams with no overflow. The system positively moves a major deflector from one subfield to a particular position of another subfield on the sample for period corresponding to a settling time that is usually needed for a subfield-to-subfield jump of the major deflector, and then exposes the sample to the beams.

摘要翻译： 带电粒子束曝光系统采用连续移动平台技术和双偏转技术。 系统稳定地偏转带电粒子束，并将样品可靠地暴露于没有溢流的光束。 该系统将一个主偏转器从样本上的另一个子场的一个子场的正确位置移动到对应于主偏转器的子场到子场跳跃通常需要的建立时间的时间段，然后将样本曝光 梁。

公开(公告)号：US06175121B1

公开(公告)日：2001-01-16

申请号：US09159603

申请日：1998-09-24

申请人： Akio Yamada ,  Hiroshi Yasuda

发明人： Akio Yamada ,  Hiroshi Yasuda

IPC分类号： H01J37302

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/16 ,  G03F7/2037 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31767 ,  H01J2237/31776 ,  H01J2237/31788 ,  H01L21/0279

摘要： A block mask for making a charged particle beam exposure using block exposure includes a plurality of block mask patterns respectively including repeating patterns, where the block mask patterns are arranged in an order dependent on an exposure sequence, at least one first block mask pattern group made up of arbitrary ones of the block mask patterns which are arranged in a predetermined direction, and at least one second block mask pattern group made up of the arbitrary ones of the block mask patterns which are arranged in a direction opposite to the predetermined direction. The second block mask pattern group is arranged adjacent to the first block mask pattern group.

摘要翻译： 使用块曝光进行带电粒子束曝光的块掩模包括分别包括重复图案的多个块掩模图案，其中块掩模图案以依赖于曝光序列的顺序排列，至少一个第一块掩模图案组 沿预定方向布置的块掩模图案中的任意一个块掩模图案，以及由沿与预定方向相反的方向布置的任意块掩模图案组成的至少一个第二块掩模图案组。 第二块掩模图案组被布置为与第一块掩模图案组相邻。

公开(公告)号：US5872366A

公开(公告)日：1999-02-16

申请号：US908699

申请日：1997-08-08

申请人： Yoshihisa Ooaeh ,  Tomohiko Abe ,  Akio Yamada ,  Hiroshi Yasuda ,  Kenj Kudoh ,  Kouzi Takahata

发明人： Yoshihisa Ooaeh ,  Tomohiko Abe ,  Akio Yamada ,  Hiroshi Yasuda ,  Kenj Kudoh ,  Kouzi Takahata

IPC分类号： H01J37/07 ,  H01J37/065 ,  H01J37/24 ,  H01J37/30 ,  H01J37/09

CPC分类号： H01J37/241 ,  H01J37/065 ,  H01J2237/3175

摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower than the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.

摘要翻译： 用于发射沿着光束轴线行进的电子束的电子枪包括具有尖端的阴极，该尖端具有基本上圆形的圆锥形形状和基本上在光束轴线处的尖端表面，阴极被施加第一电压，阳极具有 基本上在所述光束轴上的第一孔，并施加高于所述第一电压的第二电压;控制电极，其具有基本上在所述光束轴上的第二孔，并施加低于所述第一电压的电压以控制所述第一电压的电流 阴极，第二孔径大于尖端表面，具有基本上在梁轴上的第三孔的引导电极设置在阴极和阳极之间，并施加有比第一电压高的电压并且低于第二电压 电压，所述第三孔小于所述尖端表面，以及透镜电极，所述透镜电极具有基本上在所述光束轴上的第四孔 引导电极和阳极，并施加低于第一电压的电压以形成电子束的交叉图像，第四孔径大于第三孔径。

公开(公告)号：US5854490A

公开(公告)日：1998-12-29

申请号：US680960

申请日：1996-07-16

申请人： Yoshihisa Ooaeh ,  Akio Yamada ,  Hiroshi Yasuda

发明人： Yoshihisa Ooaeh ,  Akio Yamada ,  Hiroshi Yasuda

IPC分类号： H01J37/07 ,  H01J37/065 ,  H01J37/24 ,  H01J37/30 ,  H01J37/63

CPC分类号： H01J37/241 ,  H01J37/065 ,  H01J2237/3175

摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower than the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.