公开(公告)号：US20100164096A1

公开(公告)日：2010-07-01

申请号：US12344711

申请日：2008-12-29

Applicant: Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC: H01L23/488 ,  H01L21/44

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/05644 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00013 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/0103 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a via formed in a dielectric layer to expose a contact pad and a capture pad formed in the via and over the dielectric layer. The capture pad has openings over the dielectric layer to form segmented features. The solder bump is deposited on the capture pad and the openings over the dielectric layer.

Abstract translation: 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该结构包括在电介质层中形成的通孔，以露出形成在通孔中和电介质层上的接触焊盘和捕获焊盘。 捕获垫在电介质层上具有开口以形成分段特征。 焊料凸块沉积在捕获垫上并且在介电层上沉积开口。

公开(公告)号：US07639032B2

公开(公告)日：2009-12-29

申请号：US12004011

申请日：2007-12-19

Applicant: Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

Inventor： Kaushik Chanda ,  Birendra Agarwala ,  Lawrence A. Clevenger ,  Andrew P. Cowley ,  Ronald G. Filippi ,  Jason P. Gill ,  Tom C. Lee ,  Baozhen Li ,  Paul S. McLaughlin ,  Du B. Nguyen ,  Hazara S. Rathore ,  Timothy D. Sullivan ,  Chih-Chao Yang

IPC: G01R31/02 ,  H01L23/58 ,  G01N25/20

CPC classification number: G01R31/2858 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A microelectronic element such as a chip or microelectronic wiring substrate is provided which includes a plurality of conductive interconnects for improved resistance to thermal stress. At least some of the conductive interconnects include a metallic plate, a metallic connecting line and an upper metallic via. The metallic connecting line has an upper surface at least substantially level with an upper surface of the metallic plate, an inner end connected to the metallic plate at one of the peripheral edges, and an outer end horizontally displaced from the one peripheral edge. The metallic connecting line has a width much smaller than the width of the one peripheral edge of the metallic plate and has length greater than the width of the one peripheral edge. The upper metallic via has a bottom end in contact with the metallic connecting line at a location that is horizontally displaced from the one peripheral edge by at least about 3 microns (μm).

Abstract translation: 提供了诸如芯片或微电子布线基板的微电子元件，其包括用于改善耐热应力的多个导电互连。 至少一些导电互连件包括金属板，金属连接线和上金属通孔。 所述金属连接线具有与所述金属板的上表面至少基本平齐的上表面，在所述周边边缘中的一个处连接到所述金属板的内端和从所述一个周边边缘水平移位的外端。 金属连接线的宽度远小于金属板的一个周边边缘的宽度，并且其长度大于一个周边边缘的宽度。 上金属通孔在与一个外围边缘水平位移至少约3微米（mum）的位置处具有与金属连接线接触的底端。

公开(公告)号：US07572650B2

公开(公告)日：2009-08-11

申请号：US11550853

申请日：2006-10-19

Applicant: Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

Inventor： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

IPC: H01L21/00

CPC classification number: H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

Abstract translation: 用于抑制半导体加工中的局部金属沉淀形成（LMPF）的方法和结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US07550730B1

公开(公告)日：2009-06-23

申请号：US12099304

申请日：2008-04-08

Applicant: Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

Inventor： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

IPC: G01T1/178

CPC classification number: G01T1/245

Abstract: The invention relates to a method of detecting alpha particles in SOI technology and a circuit thereof. The structure is a silicon-on-insulator radiation detector which includes: a charge collection node; a precharge transistor that has a source from the charge collection node, a drain at Vdd, and a gate controlled by a precharge signal; an access transistor that has a source from the charge collection node, a drain connecting to a readout node, and a gate controlled by a read-out signal; and a detector pulldown transistor having a drain from the charge collection node, a source to ground, and a grounded gate.

Abstract translation: 本发明涉及一种在SOI技术中检测α粒子的方法及其电路。 该结构是绝缘体上硅辐射检测器，其包括：电荷收集节点; 具有来自电荷收集节点的源极，Vdd处的漏极和由预充电信号控制的栅极的预充电晶体管; 具有来自电荷收集节点的源极，与读出节点连接的漏极和由读出信号控制的栅极的存取晶体管; 以及检测器下拉晶体管，其具有来自电荷收集节点的漏极，源极接地和接地栅极。

公开(公告)号：US06773952B2

公开(公告)日：2004-08-10

申请号：US10243397

申请日：2002-09-12

Applicant: Douglas S. Armbrust ,  William F. Clark ,  William A. Klaasen ,  William T. Motsiff ,  Timothy D. Sullivan

Inventor： Douglas S. Armbrust ,  William F. Clark ,  William A. Klaasen ,  William T. Motsiff ,  Timothy D. Sullivan

IPC: H01L2100

CPC classification number: H01L23/5222 ,  H01L23/3677 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/00

Abstract: Semiconductor chip structures are provided with embedded thermal conductors for removing heat from one or more electrically conductive circuit members thereof, wherein the circuit members are formed on one or more dielectric layers above a substrate, each layer having a low dielectric constant and a low thermal conductivity. One or more cooling posts, for example, multiple thermally conductive plugs, are selectively disposed within the semiconductor chip structure adjacent to one or more electrically conductive members and thermally coupled thereto so that heat produced by the members is transferred into and through the cooling posts for forwarding to the substrate and/or to an upper surface of the semiconductor chip structure. The backside of the substrate has a thermal sink thermally coupled thereto and electrically isolated from the substrate. The thermal sink includes one or more thermally conductive via structures embedded within the substrate and aligned to thermally contact to the cooling posts disposed above the substrate.

Abstract translation: 半导体芯片结构设置有用于从一个或多个导电电路构件去除热量的嵌入式热导体，其中电路构件形成在衬底上方的一个或多个电介质层上，每层具有低介电常数和低热导率 。 一个或多个冷却柱，例如多个导热塞，被选择性地设置在半导体芯片结构内邻近一个或多个导电构件并与其热耦合，使得由构件产生的热量被传送到冷却柱中并通过冷却柱 转移到衬底和/或到半导体芯片结构的上表面。 衬底的背面具有热耦合到其上并与衬底电隔离的散热器。 散热器包括一个或多个热传导通孔结构，其嵌入衬底内并对准以与设置在衬底上方的冷却柱热接触。

公开(公告)号：US06729979B1

公开(公告)日：2004-05-04

申请号：US10161669

申请日：2002-06-04

Applicant: Timothy D. Sullivan

Inventor： Timothy D. Sullivan

IPC: A63B6900

CPC classification number: A63B69/0059 ,  A63B69/0071 ,  A63B71/148

Abstract: A basketball shooting trainer device for teaching a user to correctly shoot and release a basketball. The basketball shooting trainer device includes a piece of material having a top edge and a bottom edge and being adapted to removably cover a back of a user's basketball shooting hand; and also includes tubular finger members extending from the top edge of the piece of material and being adapted to fittingly receive a user's fingers; and further includes a finger wedge being attached to the piece of material for keeping a user's middle two fingers spread apart; and also includes a support member being attached to the piece of material; and also includes a strap assembly being attached along the bottom edge of the piece of material and being adapted to removably fasten about a user's wrist to support the piece of material upon the user's basketball shooting hand.

Abstract translation: 一种用于教导用户正确拍摄和释放篮球的篮球射击训练器。 篮球训练器装置包括具有顶边缘和底边缘的一块材料，并且适于可移除地覆盖使用者的篮球射击手的背部; 并且还包括从所述材料件的顶部边缘延伸并且适于适合地接收使用者的手指的管状指状构件; 并且还包括附接到所述材料片上的手指楔以保持使用者的中间两个手指分开; 并且还包括附接到所述材料块的支撑构件; 并且还包括沿着该材料件的底部边缘附接的带组件，并且适于可拆卸地紧固使用者手腕以将该材料材料支撑在用户的篮球射击手上。

公开(公告)号：US06037795A

公开(公告)日：2000-03-14

申请号：US938871

申请日：1997-09-26

Applicant: Ronald G. Filippi ,  James J. Poulin ,  Robert D. Raviart ,  Kenneth P. Rodbell ,  Richard G. Smith ,  Timothy D. Sullivan ,  Alexander J. Swinton

Inventor： Ronald G. Filippi ,  James J. Poulin ,  Robert D. Raviart ,  Kenneth P. Rodbell ,  Richard G. Smith ,  Timothy D. Sullivan ,  Alexander J. Swinton

IPC: G01R31/28 ,  H01L23/544

CPC classification number: G01R31/2858 ,  G01R31/2853 ,  H01L22/34 ,  H01L2924/0002

Abstract: A test layout increases the sample size of electromigration experiments. Through pad sharing, the number of structures tested can be increased, allowing hundreds of identical structures to be tested in a single high temperature oven door.

Abstract translation: 测试布局增加了电迁移实验的样本量。 通过垫共享，可以增加测试结构的数量，允许在单个高温烤箱门中测试数百个相同的结构。

公开(公告)号：US5296775A

公开(公告)日：1994-03-22

申请号：US950621

申请日：1992-09-24

Applicant: John E. Cronin ,  Rosemary A. Previti-Kelly ,  James G. Ryan ,  Timothy D. Sullivan

Inventor： John E. Cronin ,  Rosemary A. Previti-Kelly ,  James G. Ryan ,  Timothy D. Sullivan

IPC: F04D25/08 ,  H02N1/00

CPC classification number: F04D25/08 ,  H02N1/004

Abstract: A micro electrostatic cooling fan arrangement is provided which includes a heat source having a planar surface, a stator attached to the heat source, an axle attached to the heat source and spaced from the stator, a rotary element including a hub having an aperture therein and a fan blade, the axle passing through the aperture of the hub and the fan blade having a major surface thereof disposed at an angle with respect to the surface of the heat source and attached to the hub at one end, with the other end of the fan blade being adjacent to but spaced from the stator and a voltage source applied to the stator having sufficient voltage to charge the fan blade.Also, a process is provided for making a microfan which includes forming a strip of sacrificial material on a planar surface of a heat source, applying a spin on insulating layer over the heat source and the strip for producing a sloping surface extending from about the top of the strip toward the planar surface of the heat source, applying a layer of conductive material on the sloping surface and strip and defining from the layer of conductive material a fan blade on the sloping surface of the spin on insulating layer and a stator at one end of the fan blade.

Abstract translation: 提供一种微静电冷却风扇装置，其包括具有平坦表面的热源，附接到热源的定子，附接到热源并与定子间隔开的轴;旋转元件，包括其中具有孔的旋转元件， 风扇叶片，通过轮毂的孔的轴和风扇叶片的主表面相对于热源的表面设置成一定角度并且在一端附接到轮毂，而另一端 风扇叶片与定子相邻但间隔开，并且施加到定子的电压源具有足够的电压以对风扇叶片充电。 此外，提供了一种制造微纤维的方法，其包括在热源的平坦表面上形成牺牲材料条，在绝热层上施加旋涂在热源和带上，用于产生从顶部延伸的倾斜表面 的条带朝向热源的平面表面，在倾斜表面上施加一层导电材料，并且从导电材料层划分并限定绝缘层上的自旋的倾斜表面上的风扇叶片和一个定子上的风扇叶片 风扇叶片的末端。

公开(公告)号：US5124561A

公开(公告)日：1992-06-23

申请号：US680216

申请日：1991-04-04

Applicant: Thomas B. Faure ,  Kurt R. Kimmel ,  James G. Ryan ,  Timothy D. Sullivan

Inventor： Thomas B. Faure ,  Kurt R. Kimmel ,  James G. Ryan ,  Timothy D. Sullivan

IPC: G03F1/22 ,  H01L21/027 ,  H01L21/30

CPC classification number: G03F1/22

Abstract: An X-ray mask substrate includes a silicon wafer having a square, central region etched to a thin, tensile membrane and a highly tensile film deposited on the bottom surface of the substrate to reduce substrate warpage. The square, central region of the substrate is adapted to support X-ray absorbing material during the lithography process. A layer of highly tensile film such as tungsten is deposited on the lower side of the substrate to induce a bending moment on the substrate opposite that induced during the substrate fabrication process. The thickness of the film layer is directly proportional to the amount of warpage induced in the substrate during the fabrication process. A support ring is bonded to the peripheral region of the substrate to provide integrity and support.

Abstract translation: X射线掩模基板包括具有蚀刻到薄的拉伸膜的正方形中心区域和沉积在基板的底表面上的高拉伸膜的硅晶片，以减少基板翘曲。 衬底的正方形中心区域适于在光刻工艺期间支撑X射线吸收材料。 在基板的下侧沉积有诸如钨的高强度拉伸膜层，以在基板制造过程中引起与基板相反的弯矩。 膜层的厚度与在制造过程中在衬底中引起的翘曲量成正比。 支撑环结合到基板的周边区域以提供完整性和支撑。

公开(公告)号：US09029172B2

公开(公告)日：2015-05-12

申请号：US13354547

申请日：2012-01-20

Applicant: Fen Chen ,  Roger A. Dufresne ,  Timothy D. Sullivan ,  Yanfeng Wang

Inventor： Fen Chen ,  Roger A. Dufresne ,  Timothy D. Sullivan ,  Yanfeng Wang

IPC: H01L21/00 ,  H01L21/66

CPC classification number: H01L22/34 ,  H01L22/12 ,  H01L2924/00 ,  H01L2924/0002

Abstract: An on-chip poly-to-contact process monitoring and reliability evaluation system and method of use are provided. A method includes determining a breakdown electrical field of each of one or more shallow trench isolation (STI) measurement structures corresponding to respective one or more original semiconductor structures. The method further includes determining a breakdown voltage of each of one or more substrate measurement structures corresponding to the respective one or more original semiconductor structures. The method further includes determining a space between a gate and a contact of each of the one or more original semiconductor structures based on the determined breakdown electrical field and the determined breakdown voltage.

Abstract translation: 提供片上多点接触式过程监测和可靠性评估系统及其使用方法。 一种方法包括确定与相应的一个或多个原始半导体结构相对应的一个或多个浅沟槽隔离（STI）测量结构中的每一个的击穿电场。 该方法还包括确定与相应的一个或多个原始半导体结构相对应的一个或多个衬底测量结构中的每一个的击穿电压。 该方法还包括基于所确定的击穿电场和所确定的击穿电压，确定一个或多个原始半导体结构中的每一个的栅极和触点之间的空间。