公开(公告)号：US20180182911A1

公开(公告)日：2018-06-28

申请号：US15865662

申请日：2018-01-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Kanglin Xiong ,  Hongyi Mi ,  Tzu-Hsuan Chang ,  Shaoqin Gong ,  Jung-Hun Seo

IPC: H01L31/0693

CPC classification number: H01L31/0693 ,  Y02E10/544 ,  Y02P70/521

Abstract: Tandem solar cells comprising two or more solar cells connected in a solar cell stack via pn diode tunnel junctions and methods for fabricating the tandem solar cells using epitaxial lift off and transfer printing are provided. The tandem solar cells have improved tunnel junction structures comprising a current tunneling layer integrated between the p and n layers of the pn diode tunnel junction that connects the solar cells.

公开(公告)号：US09850594B2

公开(公告)日：2017-12-26

申请号：US15381652

申请日：2016-12-16

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: C30B31/02 ,  C30B33/02 ,  C30B29/04 ,  H01L21/324 ,  H01L21/04 ,  H01L29/16 ,  H01L29/861 ,  H01L29/66

CPC classification number: C30B31/02 ,  C30B29/04 ,  C30B33/02 ,  H01L21/041 ,  H01L21/324 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/861

Abstract: Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.

公开(公告)号：US09704999B2

公开(公告)日：2017-07-11

申请号：US14664119

申请日：2015-03-20

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L21/304

CPC classification number: H01L29/78618 ,  H01L21/304 ,  H01L29/0653 ,  H01L29/66522 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78696

Abstract: Thin film transistors (TFTs), including radiofrequency TFTs, with submicron-scale channel lengths and methods for making the TFTs are provided. The transistors include a trench cut into the layer of semiconductor that makes up the body of the transistors. Trench separates the source and drain regions and determines the channel length of the transistor.

公开(公告)号：US20170098715A1

公开(公告)日：2017-04-06

申请号：US14664119

申请日：2015-03-20

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/304 ,  H01L29/06

CPC classification number: H01L29/78618 ,  H01L21/304 ,  H01L29/0653 ,  H01L29/66522 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78696

Abstract: Thin film transistors (TFTs), including radiofrequency TFTs, with submicron-scale channel lengths and methods for making the TFTs are provided. The transistors include a trench cut into the layer of semiconductor that makes up the body of the transistors. Trench separates the source and drain regions and determines the channel length of the transistor.

公开(公告)号：US09605359B2

公开(公告)日：2017-03-28

申请号：US14508187

申请日：2014-10-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: C30B31/02 ,  C30B29/04 ,  C30B33/02 ,  H01L29/16 ,  H01L21/324 ,  H01L21/04

CPC classification number: C30B31/02 ,  C30B29/04 ,  C30B33/02 ,  H01L21/041 ,  H01L21/324 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/861

Abstract: Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.

公开(公告)号：US09437628B1

公开(公告)日：2016-09-06

申请号：US14709850

申请日：2015-05-12

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Yei Hwan Jung ,  Shaoqin Gong ,  Tzu-Hsuan Chang

IPC: H01L29/00 ,  H01L21/8234 ,  H01L21/8244 ,  H01L27/13 ,  H01L21/84

CPC classification number: H01L27/13 ,  H01L21/84 ,  H01L51/0013 ,  H01L51/0097

Abstract: Substantially biodegradable microwave integrated circuits and method for making the microwave integrated circuits are provided. The integrated circuits, which have applications in high performance flexible microwave and digital electronics, utilize biobased, biodegradable cellulose nanofibril films as a substrate and comprise only very small amounts of potentially toxic inorganic materials.

Abstract translation: 提供了基本可生物降解的微波集成电路和制造微波集成电路的方法。 在高性能柔性微波和数字电子应用中的集成电路利用生物基的可生物降解的纤维素纳米纤维膜作为基底，并且仅包含非常少量的潜在有毒的无机材料。

公开(公告)号：US09425351B2

公开(公告)日：2016-08-23

申请号：US14506975

申请日：2014-10-06

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/28 ,  H01L27/15 ,  H01L31/0328 ,  H01L21/283

CPC classification number: H01L33/06 ,  H01L21/283 ,  H01L27/156 ,  H01L31/0328 ,  H01L33/0008 ,  H01L33/0016 ,  H01L33/0079 ,  H01L33/0083 ,  H01L33/04 ,  H01L33/28 ,  H01L33/32 ,  H01S5/105 ,  H01S5/18369 ,  H01S5/20 ,  H01S5/3095

Abstract: Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The devices are composed of multilayered semiconductor heterostructures. The devices include one or more interfacial layers of a material that allows current tunneling through lattice mismatched heterogeneous junctions at the interfaces between the intrinsic active region and the p-type and/or n-type doped charge injection layers.

Abstract translation: 提供了具有多量子阱（MQW）pin二极管结构的发光器件以及制造和使用器件的方法。 器件由多层半导体异质结构组成。 这些器件包括一种或多种材料的界面层，其允许在本征有源区和p型和/或n型掺杂电荷注入层之间的界面处的电流隧穿通过晶格失配的异质结。

公开(公告)号：US20160097145A1

公开(公告)日：2016-04-07

申请号：US14508187

申请日：2014-10-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: C30B31/02 ,  H01L21/324 ,  H01L29/16 ,  H01L21/04 ,  C30B29/04 ,  C30B33/02

CPC classification number: C30B31/02 ,  C30B29/04 ,  C30B33/02 ,  H01L21/041 ,  H01L21/324 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/861

Abstract: Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.

Abstract translation: 提供硼掺杂金刚石及其制造方法。 在低温热扩散掺杂工艺中，使用重硼掺杂硅的超薄膜作为掺杂剂携载材料制造掺杂金刚石。

公开(公告)号：US09006785B2

公开(公告)日：2015-04-14

申请号：US13751477

申请日：2013-01-28

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo ,  Max G. Lagally

IPC: H01L31/072 ,  H01L29/32 ,  H01L29/786

CPC classification number: H01L29/32 ,  H01L29/66742 ,  H01L29/7849 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78687 ,  H01L29/78696

Abstract: Semiconductor trilayer structures that are doped and strained are provided. Also provided are mechanically flexible transistors, including radiofrequency transistors, incorporating the trilayer structures and methods for fabricating the trilayer structures and transistors. The trilayer structures comprise a first layer of single-crystalline semiconductor material, a second layer of single-crystalline semiconductor material and a third layer of single-crystalline semiconductor material. In the structures, the second layer is in contact with and sandwiched between the first and third layers and the first layer is selectively doped to provide one or more doped regions in the layer.

Abstract translation: 提供掺杂和应变的半导体三层结构。 还提供了机械灵活的晶体管，包括射频晶体管，结合三层结构和制造三层结构和晶体管的方法。 三层结构包括第一层单晶半导体材料，第二层单晶半导体材料和第三层单晶半导体材料。 在结构中，第二层与第一和第三层接触并夹在第一和第三层之间，并且第一层被选择性地掺杂以在该层中提供一个或多个掺杂区域。

公开(公告)号：US20130229776A1

公开(公告)日：2013-09-05

申请号：US13724051

申请日：2012-12-21

Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION

Inventor： Zhenqiang Ma ,  Guoxuan Qin ,  Namki Cho

IPC: H05K1/18 ,  H05K3/28

CPC classification number: H05K1/189 ,  H01L21/6835 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68381 ,  H05K1/185 ,  H05K3/284 ,  H05K2201/0133 ,  H05K2203/308

Abstract: The present invention provides flexible devices, such as integrated circuits, having a multilevel electronic device structure including two or more electronic components. The electronic components within the structure are electrically connected by an interconnect structure having multiple interconnect levels. In addition to the multilevel electronic device structure, the flexible devices include an elastomeric material disposed around the interconnect levels, including within the spaces between the interconnect levels.

Abstract translation: 本发明提供了具有包括两个或多个电子部件的多电子电子设备结构的诸如集成电路的柔性装置。 结构内的电子部件通过具有多个互连级别的互连结构电连接。 除了多电子电子设备结构之外，柔性器件还包括布置在互连级别周围的弹性材料，包括在互连级之间的空间内。