公开(公告)号：US20130217243A1

公开(公告)日：2013-08-22

申请号：US13590761

申请日：2012-08-21

申请人： Brian S. Underwood ,  Nitin K. Ingle ,  Abhijit Basu Mallick

发明人： Brian S. Underwood ,  Nitin K. Ingle ,  Abhijit Basu Mallick

IPC分类号： H01L21/02

CPC分类号： H01L21/02356 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/31111 ,  H01L21/31155

摘要： Methods are described for forming and treating a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is ion implanted to increase etch tolerance, prevent shrinkage, adjust film tension and/or adjust electrical characteristics. Ion implantation may also remove components which enabled the flowability, but are no longer needed after deposition. Some treatments using ion implantation have been found to decrease the evolution of properties of the film upon exposure to atmosphere.

摘要翻译： 描述了用于在半导体衬底上形成和处理可流动的含硅 - 碳和氮的层的方法。 硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化以加速氮与含硅和碳的前体的反应的含氮前体 较低的沉积温度。 初始可流动的含硅碳和氮的层被离子注入以增加蚀刻耐受性，防止收缩，调节膜张力和/或调节电特性。 离子注入还可以去除能够流动的组分，但是在沉积后不再需要它们。 已经发现使用离子注入的一些处理降低了暴露于大气中的膜的性质的演变。

公开(公告)号：US20120142198A1

公开(公告)日：2012-06-07

申请号：US13396410

申请日：2012-02-14

申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： H01L21/316

CPC分类号： H01L21/02326 ,  H01L21/02343

摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

摘要翻译： 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。

公开(公告)号：US20090031953A1

公开(公告)日：2009-02-05

申请号：US12249816

申请日：2008-10-10

申请人： Nitin K. Ingle ,  Zheng Yuan ,  Paul Gee ,  Kedar Sapre

发明人： Nitin K. Ingle ,  Zheng Yuan ,  Paul Gee ,  Kedar Sapre

IPC分类号： C23C16/513

CPC分类号： C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31612

摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

摘要翻译： 描述了在衬底上沉积氧化硅层的方法。 所述方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，以及将原子氧前体引入室中。 所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。 硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。 还描述了在衬底上沉积氧化硅层的系统。

公开(公告)号：US20200098633A1

公开(公告)日：2020-03-26

申请号：US16691947

申请日：2019-11-22

申请人： Ying Zhang ,  Abhijit Basu Mallick ,  Regina Freed ,  Nitin K. Ingle ,  Uday Mitra ,  Ho-yung David Hwang

发明人： Ying Zhang ,  Abhijit Basu Mallick ,  Regina Freed ,  Nitin K. Ingle ,  Uday Mitra ,  Ho-yung David Hwang

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L23/48

摘要： A first metallization layer comprising a set of first conductive lines that extend along a first direction on a first insulating layer on a substrate. A second insulating layer is on the first insulating layer. A second metallization layer comprises a set of second conductive lines on a third insulating layer and on the second insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. A via between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines.

公开(公告)号：US08466073B2

公开(公告)日：2013-06-18

申请号：US13448624

申请日：2012-04-17

申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： H01L21/316

CPC分类号： H01L21/022 ,  C23C16/30 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02323 ,  H01L21/02326

摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing film is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.

摘要翻译： 描述形成氧化硅层的方法。 该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。 通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅氮和氢的膜。 在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。 封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。 通过暴露于含氧环境将膜转化为氧化硅。 两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

公开(公告)号：US20130034968A1

公开(公告)日：2013-02-07

申请号：US13279998

申请日：2011-10-24

申请人： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

发明人： Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Yunyu Wang ,  Young Lee

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/31116

摘要： A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.

摘要翻译： 描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。 含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

公开(公告)号：US20120309205A1

公开(公告)日：2012-12-06

申请号：US13448624

申请日：2012-04-17

申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： H01L21/316

CPC分类号： H01L21/022 ,  C23C16/30 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02323 ,  H01L21/02326

摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen containing film is formed by combining a radical precursor (excited in a remote plasma) with m unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.

摘要翻译： 描述形成氧化硅层的方法。 该方法首先通过自由基成分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。 通过将自由基前体（在远程等离子体中激发）与未加注射的无碳硅前体组合形成含硅氮和氢的膜。 在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。 封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。 通过暴露于含氧环境将膜转化为氧化硅。 两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

公开(公告)号：US20120088193A1

公开(公告)日：2012-04-12

申请号：US13267341

申请日：2011-10-06

申请人： Timothy W. Weidman ,  Timothy Michaelson ,  Paul Deaton ,  Nitin K. Ingle ,  Abhijit Basu Mallick ,  Amit Chatterjee

发明人： Timothy W. Weidman ,  Timothy Michaelson ,  Paul Deaton ,  Nitin K. Ingle ,  Abhijit Basu Mallick ,  Amit Chatterjee

IPC分类号： G03F7/20

CPC分类号： G03F7/094 ,  G03F7/0752 ,  G03F7/16 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/311 ,  H01L21/31144

摘要： Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.

摘要翻译： 提供了在基板上形成对辐射敏感的光刻胶的方法。 描述了使用等离子体形成膜（例如，含硅膜）作为光致抗蚀剂的化学气相沉积方法，其可以暴露于辐射以形成图案。 沉积方法利用可交联部分的前体，其在暴露于辐射时将交联。 辐射可以在有或没有氧的情况下进行。 然后可以将曝光或未曝光的区域显影在碱性显影液中。

公开(公告)号：US07459405B2

公开(公告)日：2008-12-02

申请号：US11493211

申请日：2006-07-25

申请人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Xinyua Xia ,  Zheng Yuan

IPC分类号： H01L21/469 ,  H01L21/31 ,  H01L21/26

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45512 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  Y10S438/958

摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

摘要翻译： 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。 在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

公开(公告)号：US07456116B2

公开(公告)日：2008-11-25

申请号：US11018381

申请日：2004-12-20

申请人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang ,  Zheng Yuan

发明人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang ,  Zheng Yuan

IPC分类号： H01L21/31

CPC分类号： C23C16/45512 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/52

摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

摘要翻译： 一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前驱体选自TMOS，TEOS，OMTS，OMCTS， 和TOMCATS。 该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。 该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。