公开(公告)号：US20090200552A1

公开(公告)日：2009-08-13

申请号：US12323872

申请日：2008-11-26

申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

IPC分类号： H01L29/04 ,  H01L21/20 ,  H01L21/00

CPC分类号： H01L29/04 ,  C23C16/26 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/7866

摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.

摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有 氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在 约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

公开(公告)号：US20090071403A1

公开(公告)日：2009-03-19

申请号：US12233443

申请日：2008-09-18

申请人： Soo Young Choi ,  Robin L. Tiner ,  John M. White

发明人： Soo Young Choi ,  Robin L. Tiner ,  John M. White

IPC分类号： C23C16/513

CPC分类号： C23C16/24 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32522

摘要： The invention generally relates to a plasma enhanced chemical vapor deposition chamber for depositing amorphous or microcrystalline silicon on a glass substrate to fabricate solar voltaic cells. The chamber includes a backing plate having at least one fluid receiving conduit to receive cooling fluid to remove heat generated within the chamber by the plasma, thereby stabilizing and cooling the backing plate to assure the uniformity of deposition of materials on the surface of the substrate.

摘要翻译： 本发明一般涉及用于在玻璃基板上沉积非晶或微晶硅以制造太阳能电池的等离子体增强化学气相沉积室。 该腔室包括具有至少一个流体接收导管以便接收冷却流体以利用等离子体去除室内产生的热量的背板，从而稳定和冷却背板，以确保材料在衬底表面上的沉积的均匀性。

公开(公告)号：US07429410B2

公开(公告)日：2008-09-30

申请号：US11188922

申请日：2005-07-25

申请人： Ernst Keller ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

发明人： Ernst Keller ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

IPC分类号： H05H1/24

CPC分类号： H01J37/3244 ,  C23C16/45565

摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gasses through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.

摘要翻译： 公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。 至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑 扩散器没有周界支撑。 在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。 至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。 还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

公开(公告)号：US20080190886A1

公开(公告)日：2008-08-14

申请号：US12027964

申请日：2008-02-07

申请人： Soo Young Choi ,  Gaku Furuta

发明人： Soo Young Choi ,  Gaku Furuta

IPC分类号： C23F1/00

CPC分类号： H01L21/31116 ,  C03C17/34 ,  C03C2218/33 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  H01L21/31111

摘要： A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process for etching substrate material is provided including depositing a first silicon-containing material layer having a first etch rate on the substrate surface from a nitrogen-containing precursor at a first flow rate and a silicon-containing precursor, depositing a second silicon-containing material layer having a second etch rate different than the first etch rate on the first silicon-containing material layer from the nitrogen-containing precursor at a second flow rate different than the first flow rate and the silicon-containing precursor, etching the first silicon-containing material layer and the second silicon-containing material layer, and forming a taper etch profile in the first silicon-containing material layer and the second silicon-containing material layer.

摘要翻译： 提供了一种方法和装置，用于通过在相同或不同的处理室中沉积差分蚀刻速率的第一和第二材料层来控制多层堆叠的蚀刻轮廓。 在本发明的一个实施例中，提供了一种用于蚀刻衬底材料的方法，包括：以第一流速从含氮前体沉积具有第一蚀刻速率的第一含硅材料层，并在第一流速下沉积含硅前体 在第一含硅材料层上以不同于第一流速的第二流量从含氮前体沉积具有与第一蚀刻速率不同的第二蚀刻速率的第二含硅材料层， 蚀刻第一含硅材料层和第二含硅材料层，并在第一含硅材料层和第二含硅材料层中形成锥形蚀刻轮廓。

公开(公告)号：US20080132080A1

公开(公告)日：2008-06-05

申请号：US11607702

申请日：2006-12-01

申请人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

发明人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3185 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.

摘要翻译： 已经发现并进一步开发了含硅膜的PECVD沉积方法。 当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法特别有用。 该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。 通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从 等离子处理区。

公开(公告)号：US20080074255A1

公开(公告)日：2008-03-27

申请号：US11682290

申请日：2007-03-05

申请人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

发明人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

IPC分类号： G08B21/00

CPC分类号： H01J37/32174 ,  H01J37/32935 ,  H03H7/40

摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.

摘要翻译： 通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。 在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。 在第二方面，第二对下限和上限不适合电源的频率。 两个方面优选一起用于检测异常状况的不同出现。

公开(公告)号：US06942753B2

公开(公告)日：2005-09-13

申请号：US10417592

申请日：2003-04-16

申请人： Soo Young Choi ,  Quanyuan Shang ,  Robert I. Greene ,  Li Hou

发明人： Soo Young Choi ,  Quanyuan Shang ,  Robert I. Greene ,  Li Hou

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/00 ,  C23C16/452 ,  C23F1/00 ,  H01L21/00

CPC分类号： C23C16/45565 ,  C23C16/5096

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having a plurality of gas passages passing between an upstream side and a downstream side of the diffuser plate. At least one of the gas passages includes a first hole and a second hole coupled by an orifice hole. The first hole extends from the upstream side of the diffuser plate while the second hole extends from the downstream side. The orifice hole has a diameter less than the respective diameters of the first and second holes.

摘要翻译： 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中，气体分配板包括具有通过扩散板的上游侧和下游侧之间的多个气体通道的扩散板。 至少一个气体通道包括第一孔和通过孔口联接的第二孔。 第一孔从扩散板的上游侧延伸，而第二孔从下游侧延伸。 孔口的直径小于第一孔和第二孔的直径。

公开(公告)号：US06909476B2

公开(公告)日：2005-06-21

申请号：US10621541

申请日：2003-07-17

申请人： Soo Young Choi ,  Sang Un Choi ,  Hoan Su Shim ,  Sung Woon Kim

发明人： Soo Young Choi ,  Sang Un Choi ,  Hoan Su Shim ,  Sung Woon Kim

IPC分类号： G02B5/20 ,  G02F1/1333 ,  G02F1/1334 ,  G02F1/1335

CPC分类号： G02F1/133514 ,  G02F1/1334

摘要： A color polymer dispersed liquid crystal display includes a lower substrate, an upper substrate, color liquid crystal-polymer films, and two transparent liquid crystal driving electrodes, among others. The color liquid crystal-polymer films are formed by foaming polymer films mixed with red, green and blue pigments to form porous films of red, green, and blue colors and then dropping and injecting liquid crystal into droplets of the porous films under vacuum condition. One of the two transparent liquid crystal driving electrodes is disposed between the lower substrate and the PDLC films, and the other is disposed between the PDLC films and the upper substrate. The changes in properties of the PDLC films, which may be caused by unstable phase separation in a conventional phase separation process, are reduced, and the colors are improved.

摘要翻译： 彩色聚合物分散液晶显示器包括下基板，上基板，彩色液晶聚合物膜和两个透明液晶驱动电极等。 彩色液晶聚合物膜是通过与红色，绿色和蓝色颜料混合的聚合物膜发泡形成的，以形成红色，绿色和蓝色的多孔膜，然后在真空条件下滴加和注入多孔膜的液滴。 两个透明液晶驱动电极之一设置在下基板和PDLC膜之间，另一个设置在PDLC膜和上基板之间。 在常规相分离过程中可能由不稳定的相分离引起的PDLC膜的性能变化减小，颜色得到改善。

公开(公告)号：US09382621B2

公开(公告)日：2016-07-05

申请号：US12700484

申请日：2010-02-04

申请人： Soo Young Choi ,  Robin L. Tiner ,  Shinichi Kurita ,  John M. White ,  Carl A. Sorensen ,  Jeffrey A. Kho ,  Suhail Anwar ,  Makoto Inagawa ,  Gaku Furuta

发明人： Soo Young Choi ,  Robin L. Tiner ,  Shinichi Kurita ,  John M. White ,  Carl A. Sorensen ,  Jeffrey A. Kho ,  Suhail Anwar ,  Makoto Inagawa ,  Gaku Furuta

IPC分类号： C23C16/509 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67

CPC分类号： C23C16/5096 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01L21/67069

摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

摘要翻译： 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。 该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和 电极或其组合。

公开(公告)号：US08772066B2

公开(公告)日：2014-07-08

申请号：US13361637

申请日：2012-01-30

申请人： Jrjyan Jerry Chen ,  Soo Young Choi

发明人： Jrjyan Jerry Chen ,  Soo Young Choi

IPC分类号： H01L21/00

CPC分类号： H01L51/56 ,  H01L51/0001 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/5256

摘要： Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes.

摘要翻译： 提供了使用混合材料层封装置于衬底上的有机发光二极管（OLED）结构的方法和装置。 在沉积材料的混合层期间使用的处理参数允许控制沉积的混合层的特性。 混合层可以沉积成使得该层具有混合层的一些子层中的无机材料的特性和混合层的其它子层中的有机材料的特性。 混合材料的使用允许使用单个硬掩模的OLED封装用于完整的封装工艺，其具有低成本且在常规工艺中不存在对准问题。