公开(公告)号：US06280903B1

公开(公告)日：2001-08-28

申请号：US09618142

申请日：2000-07-17

申请人： Yool Kang ,  Sang-Jun Choi ,  Dong-Won Jung ,  Chun-Geun Park ,  Young-Bum Koh

发明人： Yool Kang ,  Sang-Jun Choi ,  Dong-Won Jung ,  Chun-Geun Park ,  Young-Bum Koh

IPC分类号： G03C1492

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Copolymers and terpolymers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof. R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; M and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.

摘要翻译： 共聚物和三元共聚物用于化学增强抗蚀剂。 三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中所述脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基 。 R 4选自氢和C 1至C 10脂族烃，其中所述脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; M和n分别是整数; 并且其中n /（m + n）为约0.1至约0.5。

公开(公告)号：US08570409B2

公开(公告)日：2013-10-29

申请号：US12909948

申请日：2010-10-22

申请人： Sang-Jun Choi ,  Yoon-Dong Park ,  Chris Hong ,  Dae-Lok Bae ,  Jung-Chak Ahn ,  Chang-Rok Moon ,  June-Mo Koo ,  Suk-Pil Kim ,  Hoon-Sang Oh

发明人： Sang-Jun Choi ,  Yoon-Dong Park ,  Chris Hong ,  Dae-Lok Bae ,  Jung-Chak Ahn ,  Chang-Rok Moon ,  June-Mo Koo ,  Suk-Pil Kim ,  Hoon-Sang Oh

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14641 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/9212 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

摘要： An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

摘要翻译： 图像传感器包括：第一基板，包括驱动元件，第一基板上的第一绝缘层和驱动元件;第二基板，包括光电转换元件;以及第二绝缘层，在第二基板上和光电转换元件 。 第二绝缘层的表面位于第一绝缘层的上表面上。 图像传感器包括穿透第二绝缘层和第一绝缘层的一部分的导电连接器。 还公开了形成图像传感器的方法。

公开(公告)号：US08017301B2

公开(公告)日：2011-09-13

申请号：US12314888

申请日：2008-12-18

申请人： Sang-Jun Choi ,  Youn-Jin Cho ,  Seung-Wook Shin ,  Hye-Won Kim

发明人： Sang-Jun Choi ,  Youn-Jin Cho ,  Seung-Wook Shin ,  Hye-Won Kim

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0397 ,  C08F24/00 ,  Y10S430/106 ,  Y10S430/111

摘要： A photosensitive polymer, the photosensitive polymer including repeating units represented by Formulae 1 to 3: wherein R1 and R3 are independently hydrogen or methyl, R2 is a C4 to C20 acid-labile group, R4 is a lactone-derived group, AR is a substituted or unsubstituted phenyl ring, or a substituted or unsubstituted aryl having from two to three fused aromatic rings, carbon CAR is bonded directly to an aromatic ring of AR, l, m, and n are positive integers, l/(l+m+n) is about 0.1 to about 0.5, m/(l+m+n) is about 0.3 to about 0.5, and n/(l+m+n) is about 0.1 to 0.4.

摘要翻译： 光敏聚合物，其包含由式1至3表示的重复单元：其中R1和R3独立地为氢或甲基，R2为C4至C20酸不稳定基团，R4为内酯衍生基团，AR为取代基 或未取代的苯环，或具有2至3个稠合芳环的取代或未取代的芳基，碳CAR直接键合到芳族环，AR，l，m和n均为正整数，l /（1 + m + n ）为约0.1至约0.5，m /（1 + m + n）为约0.3至约0.5，并且n /（1 + m + n）为约0.1至0.4。

公开(公告)号：US20100233620A1

公开(公告)日：2010-09-16

申请号：US12801145

申请日：2010-05-25

申请人： Sang-Jun Choi ,  Youn-Jin Cho ,  Seung-Wook Shin

发明人： Sang-Jun Choi ,  Youn-Jin Cho ,  Seung-Wook Shin

IPC分类号： G03F7/004 ,  C08F134/02

CPC分类号： G03F7/0397

摘要： A resist copolymer includes a repeating unit having the following Chemical Formula 1, a repeating unit having the following Chemical Formula 2, and a repeating unit having the following Chemical Formula 3:

摘要翻译： 抗蚀剂共聚物包括具有以下化学式1的重复单元，具有以下化学式2的重复单元和具有以下化学式3的重复单元：

公开(公告)号：US07527275B2

公开(公告)日：2009-05-05

申请号：US11299390

申请日：2005-12-08

申请人： Sang-Jun Choi

发明人： Sang-Jun Choi

IPC分类号： B62D17/00

CPC分类号： B60G15/068 ,  B60G17/021 ,  B60G2200/142 ,  B60G2200/46 ,  B60G2200/464 ,  B60G2202/312 ,  B60G2202/32 ,  B60G2202/42 ,  B60G2204/124 ,  B60G2204/128 ,  B60G2204/4192 ,  B60G2204/4193 ,  B60G2204/43 ,  B60G2204/44 ,  B60G2204/4402 ,  B60G2204/61 ,  B60G2204/62 ,  B60G2206/911 ,  B60G2500/30 ,  B60G2500/32

摘要： At least three length varying means, mounted between an upper end of a strut and a vehicle body, change the position of the strut in relation to the vehicle body, thereby enabling active adjustment of the camber, caster, and vehicle height.

摘要翻译： 安装在支柱的上端和车身之间的至少三个长度变化装置相对于车身改变支柱的位置，从而能够主动调节弯度，脚轮和车辆高度。

公开(公告)号：US07435644B2

公开(公告)日：2008-10-14

申请号：US11329577

申请日：2006-01-11

申请人： Woo-Gwan Shim ,  Jung-Min Oh ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Sang-Yong Kim

发明人： Woo-Gwan Shim ,  Jung-Min Oh ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Sang-Yong Kim

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold oxide layer and the bridge insulating layer are etched to define an electrode region. The mold oxide layer is removed using an etching gas having an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer.

摘要翻译： 提供一种制造半导体器件的电容器的方法，其可以防止下电极的倾斜或电短路。 在该方法中，在模具氧化物层上的接触插塞上方形成网状桥接绝缘层。 蚀刻模具氧化物层和桥接绝缘层以限定电极区域。 使用相对于桥接绝缘层的模具氧化物层的蚀刻选择性为500以上的蚀刻气体去除模具氧化物层。

公开(公告)号：US07435301B2

公开(公告)日：2008-10-14

申请号：US11104829

申请日：2005-04-13

申请人： Chang-Sup Mun ,  Doo-Won Kwon ,  Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi

发明人： Chang-Sup Mun ,  Doo-Won Kwon ,  Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi

IPC分类号： C23G1/16

CPC分类号： H01L21/02052 ,  C11D1/66 ,  C11D1/72 ,  C11D3/044 ,  C11D11/0047 ,  H01L21/3081 ,  Y10S134/902

摘要： Disclosed are a cleaning solution for preventing damage of a silicon germanium layer when cleaning a semiconductor device including the silicon germanium layer and a cleaning method using the same. The cleaning solution of a silicon germanium layer includes from about 0.01 to about 2.5 percent by weight of a non-ionic surfactant with respect to 100 percent by weight of the cleaning solution, about 0.05 to about 5.0 percent by weight of an alkaline compound with respect to the cleaning solution and a remaining amount of pure water. The damage to an exposed silicon germanium layer can be prevented when cleaning a silicon substrate having a silicon germanium layer. Impurities present on the surface portion of the silicon germanium layer can be effectively removed.

摘要翻译： 公开了一种用于在清洁包括硅锗层的半导体器件时的防止硅锗层损坏的清洁溶液以及使用其的清洁方法。 硅锗层的清洁溶液包括约0.01至约2.5重量％的非离子表面活性剂相对于100重量％的清洁溶液，约0.05至约5.0重量％的碱性化合物，相对于 到清洁溶液和剩余量的纯水。 当清洁具有硅锗层的硅衬底时，可以防止暴露的硅锗层的损坏。 可以有效地除去存在于硅锗层的表面部分上的杂质。

公开(公告)号：US07262141B2

公开(公告)日：2007-08-28

申请号：US11194794

申请日：2005-08-01

申请人： Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Dong-Gyun Han

发明人： Hyung-Ho Ko ,  Chang-Ki Hong ,  Sang-Jun Choi ,  Dong-Gyun Han

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/30604 ,  H01L21/0206 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823481 ,  Y10S438/906

摘要： A method for cleaning a semiconductor substrate forming device isolation layers in a predetermined region of a semiconductor substrate to define active regions; etching predetermined areas of the active regions to form a recess channel region and such that sidewalls of the device isolation layers are exposed; and selectively etching a surface of the recess channel region using a predetermined cleaning solution to clean the semiconductor substrate where the recess channel region has been formed.

摘要翻译： 一种用于清洁在半导体衬底的预定区域中形成器件隔离层的半导体衬底以限定有源区域的方法; 蚀刻有源区域的预定区域以形成凹陷沟道区域，并且使得器件隔离层的侧壁被暴露; 并且使用预定的清洗溶液选择性地蚀刻凹槽通道区域的表面，以清洁已经形成凹槽通道区域的半导体衬底。

公开(公告)号：US20070181150A1

公开(公告)日：2007-08-09

申请号：US11736260

申请日：2007-04-17

申请人： Sang-Yong KIM ,  Sang-Jun Choi ,  Chang-Ki Hong

发明人： Sang-Yong KIM ,  Sang-Jun Choi ,  Chang-Ki Hong

IPC分类号： C23G1/00 ,  B08B7/00 ,  B08B3/00

CPC分类号： C23F1/16 ,  C11D3/042 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76805 ,  H01L21/76814

摘要： A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

摘要翻译： 一种用于在制造半导体器件期间去除异物的清洁方法，包括用包括氧化剂的清洁溶液处理基底以形成化学氧化物层，然后除去化学氧化物层，从而从半导体衬底的表面去除异物。 因此，异物可以基本上从基板的表面除去而不会腐蚀金属。

公开(公告)号：US20070165434A1

公开(公告)日：2007-07-19

申请号：US11655086

申请日：2007-01-19

申请人： Jung-Hyun Lee ,  Eun-Hong Lee ,  Sang-Jun Choi ,  In-Kyeong Yoo ,  Myoung-Jae Lee

发明人： Jung-Hyun Lee ,  Eun-Hong Lee ,  Sang-Jun Choi ,  In-Kyeong Yoo ,  Myoung-Jae Lee

IPC分类号： G11C27/00

CPC分类号： G11C13/003 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/76

摘要： Resistive memory devices having at least one varistor and methods of operating the same are disclosed. The resistive memory device may include at least one bottom electrode line, at least one top electrode line crossing the at least one bottom electrode line, and at least one stack structure disposed at an intersection of the at least one top electrode line and the at least one bottom electrode line including a varistor and a data storage layer.

摘要翻译： 公开了具有至少一个压敏电阻的电阻式存储器件及其操作方法。 电阻式存储器件可以包括至少一个底部电极线，与至少一个底部电极线交叉的至少一个顶部电极线以及至少一个堆叠结构，该至少一个堆叠结构设置在至少一个顶部电极线和至少一个顶部电极线的交点处 一个底部电极线包括变阻器和数据存储层。