公开(公告)号：US07320898B2

公开(公告)日：2008-01-22

申请号：US11154547

申请日：2005-06-17

申请人： Satoshi Tamura ,  Norio Ikedo

发明人： Satoshi Tamura ,  Norio Ikedo

IPC分类号： H01L21/00 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01L2224/48091 ,  H01S5/2081 ,  H01S5/2202 ,  H01S5/222 ,  H01S5/34333 ,  H01L2924/00014

摘要： A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semiconductor layer and having a groove; and a second semiconductor layer formed on the multilayer film to fill the groove and made of a nitride semiconductor of the first conductivity type. The multilayer film is composed of a plurality of thin films containing a nitride semiconductor of a second conductivity type, and one of the thin films formed as the uppermost film is made of gallium nitride.

摘要翻译： 本发明的半导体激光器件包括：形成在基板上的有源层; 形成在有源层上并由第一导电类型的氮化物半导体制成的第一半导体层; 形成在所述第一半导体层上并具有凹槽的多层膜; 以及第二半导体层，形成在所述多层膜上以填充所述沟槽并由所述第一导电类型的氮化物半导体制成。 多层膜由含有第二导电型的氮化物半导体的多个薄膜构成，作为最上面的膜形成的一个薄膜由氮化镓构成。

公开(公告)号：US07135085B2

公开(公告)日：2006-11-14

申请号：US11018562

申请日：2004-12-21

申请人： Tsutomu Aso ,  Satoshi Tamura ,  Atsushi Taniguchi

发明人： Tsutomu Aso ,  Satoshi Tamura ,  Atsushi Taniguchi

IPC分类号： B44C1/16 ,  B65G15/30 ,  B65H20/26 ,  B28B11/04 ,  B65H20/36 ,  B41M3/12 ,  B05D1/40

CPC分类号： B32B27/08 ,  B05D1/286 ,  B32B27/308 ,  B32B27/32 ,  B32B27/365 ,  B32B27/40 ,  B32B37/025 ,  B32B37/04 ,  B32B37/1027 ,  B32B2307/406 ,  B32B2355/02 ,  B32B2451/00 ,  B44C1/17

摘要： A production method of a decorative film comprises a first step of laying a base film of a thermoplastic resin on a pattern layer of a transfer sheet in which the pattern layer is placed on one surface of a carrier film, thermally transferring the pattern layer onto the base film, and thereafter stripping off the carrier film, thereby obtaining a laminate sheet in which the pattern layer is placed on one surface of the base film; and a second step of, in a state in which a transparent resin film is laid on a surface of the laminate sheet on the pattern layer side, inserting the laminate sheet and the transparent resin film into between a pair of endless belts placed opposite each other, and conveying the laminate sheet and the transparent resin film under heat and pressure, thereby obtaining a decorative film in which a transparent resin layer of the transparent resin film is placed on the surface of the laminate sheet on the pattern layer side.

摘要翻译： 装饰膜的制造方法包括：第一步骤，将热塑性树脂的基底膜放置在转印片的图案层上，其中图案层被放置在载体膜的一个表面上，将图案层热转印到 然后剥离载体膜，从而获得其中图案层位于基膜的一个表面上的层压片; 在第二工序中，在层叠片的图案层侧的表面上放置透明树脂膜的状态下，将层压片和透明树脂膜插入到彼此相对放置的一对环形带之间 ，并且在加热和加压下输送层压片和透明树脂膜，从而获得其中透明树脂膜的透明树脂层放置在图案层侧的层压片的表面上的装饰膜。

公开(公告)号：US20050279993A1

公开(公告)日：2005-12-22

申请号：US11154547

申请日：2005-06-17

申请人： Satoshi Tamura ,  Norio Ikedo

发明人： Satoshi Tamura ,  Norio Ikedo

IPC分类号： H01L29/06 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01L2224/48091 ,  H01S5/2081 ,  H01S5/2202 ,  H01S5/222 ,  H01S5/34333 ,  H01L2924/00014

摘要： A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semiconductor layer and having a groove; and a second semiconductor layer formed on the multilayer film to fill the groove and made of a nitride semiconductor of the first conductivity type. The multilayer film is composed of a plurality of thin films containing a nitride semiconductor of a second conductivity type, and one of the thin films formed as the uppermost film is made of gallium nitride.

摘要翻译： 本发明的半导体激光器件包括：形成在基板上的有源层; 形成在有源层上并由第一导电类型的氮化物半导体制成的第一半导体层; 形成在所述第一半导体层上并具有凹槽的多层膜; 以及第二半导体层，形成在所述多层膜上以填充所述沟槽并由所述第一导电类型的氮化物半导体制成。 多层膜由含有第二导电型的氮化物半导体的多个薄膜构成，作为最上面的膜形成的一个薄膜由氮化镓构成。

公开(公告)号：US20050211369A1

公开(公告)日：2005-09-29

申请号：US11018562

申请日：2004-12-21

申请人： Tsutomu Aso ,  Satoshi Tamura ,  Atsushi Taniguchi

发明人： Tsutomu Aso ,  Satoshi Tamura ,  Atsushi Taniguchi

IPC分类号： B32B27/00 ,  B32B27/08 ,  B32B33/00 ,  B32B37/04 ,  B32B37/10 ,  B44C1/17 ,  B32B31/00

CPC分类号： B32B27/08 ,  B05D1/286 ,  B32B27/308 ,  B32B27/32 ,  B32B27/365 ,  B32B27/40 ,  B32B37/025 ,  B32B37/04 ,  B32B37/1027 ,  B32B2307/406 ,  B32B2355/02 ,  B32B2451/00 ,  B44C1/17

摘要： A production method of a decorative film comprises a first step of laying a base film of a thermoplastic resin on a pattern layer of a transfer sheet in which the pattern layer is placed on one surface of a carrier film, thermally transferring the pattern layer onto the base film, and thereafter stripping off the carrier film, thereby obtaining a laminate sheet in which the pattern layer is placed on one surface of the base film; and a second step of, in a state in which a transparent resin film is laid on a surface of the laminate sheet on the pattern layer side, inserting the laminate sheet and the transparent resin film into between a pair of endless belts placed opposite each other, and conveying the laminate sheet and the transparent resin film under heat and pressure, thereby obtaining a decorative film in which a transparent resin layer of the transparent resin film is placed on the surface of the laminate sheet on the pattern layer side.

摘要翻译： 装饰膜的制造方法包括：第一步骤，将热塑性树脂的基底膜放置在转印片的图案层上，其中图案层被放置在载体膜的一个表面上，将图案层热转印到 然后剥离载体膜，从而获得其中图案层位于基膜的一个表面上的层压片; 在第二工序中，在层叠片的图案层侧的表面上放置透明树脂膜的状态下，将层压片和透明树脂膜插入到彼此相对放置的一对环形带之间 ，并且在加热和加压下输送层压片和透明树脂膜，从而获得其中透明树脂膜的透明树脂层放置在图案层侧的层压片的表面上的装饰膜。

公开(公告)号：US06723165B2

公开(公告)日：2004-04-20

申请号：US10118924

申请日：2002-04-10

申请人： Masahiro Ogawa ,  Masahiro Ishida ,  Satoshi Tamura ,  Shinichi Takigawa

发明人： Masahiro Ogawa ,  Masahiro Ishida ,  Satoshi Tamura ,  Shinichi Takigawa

IPC分类号： C30B2502

CPC分类号： H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02664 ,  H01S5/0217 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

摘要： A method for fabricating a Group III nitride semiconductor substrate according to the present invention includes the steps of: (a) preparing a substrate; (b) forming, on the substrate, a first semiconductor layer composed of a Group III nitride semiconductor; (c) forming, on the first semiconductor layer, a heat diffusion suppressing layer lower in thermal conductivity than the first semiconductor layer; (d) forming, on the heat diffusion suppressing layer, a second semiconductor layer composed of a Group III nitride semiconductor; and (e) irradiating the first semiconductor layer through the substrate with a light beam transmitted by the substrate and absorbed by the first semiconductor layer to decompose the first semiconductor layer.

摘要翻译： 根据本发明的制造III族氮化物半导体衬底的方法包括以下步骤：（a）制备衬底; （b）在所述基板上形成由III族氮化物半导体构成的第一半导体层; （c）在第一半导体层上形成热导率比第一半导体层低的热扩散抑制层; （d）在所述热扩散抑制层上形成由III族氮化物半导体构成的第二半导体层; 和（e）用基板透射的光束照射第一半导体层，并被第一半导体层吸收以分解第一半导体层。

公开(公告)号：US06649494B2

公开(公告)日：2003-11-18

申请号：US10054844

申请日：2002-01-25

申请人： Satoshi Tamura ,  Masahiro Ogawa ,  Masahiro Ishida ,  Masaaki Yuri

发明人： Satoshi Tamura ,  Masahiro Ogawa ,  Masahiro Ishida ,  Masaaki Yuri

IPC分类号： H01L2100

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0079 ,  Y10S117/915

摘要： A protector film is formed on the surface of a substrate to cover at least the side surface thereof. Then, a compound semiconductor film including nitrogen is grown through epitaxial growth on the substrate at an exposed portion. Then, the substrate and the compound semiconductor film are separated from each other by irradiation of laser light, polishing of the substrate, etching, cutting, etc. Consequently, the resulting compound semiconductor film is used as a free-standing wafer.

公开(公告)号：US06507724B2

公开(公告)日：2003-01-14

申请号：US09818628

申请日：2001-03-28

申请人： Satoshi Tamura ,  Yuji Bessho

发明人： Satoshi Tamura ,  Yuji Bessho

IPC分类号： G03G1501

CPC分类号： G03G15/0131 ,  G03G2215/0119 ,  G03G2215/1661

摘要： An image forming apparatus has a plurality of image bearing members which are disposed along the conveying direction of transfer material and on which latent images are formed. Developing devices are disposed corresponding to the plurality of image bearing members and develop the latent images with developers. A transfer material bearing and conveying member and a transfer device to sequentially transfer the developer images developed on the plurality of image bearing members to the transfer material on the transfer material bearing and conveying member are also a part of the image forming apparatus. The apparatus also has a cleaning member which cleans the surface of the transfer material bearing and conveying member. A developer image that is not to be transferred onto the transfer material is formed only onto one image bearing member disposed downstream in the movement direction of the transfer material bearing and conveying member among the plurality of image bearing members. The developer image is transferred onto the transfer material bearing and conveying member by the transfer member and the transfer material bearing and conveying member is moved so that the transferred developer image reaches the cleaning member.

摘要翻译： 图像形成装置具有沿着转印材料的输送方向设置的多个图像承载部件，并且在其上形成有潜像。 对应于多个图像承载部件设置显影装置，并用显影剂显影潜像。 转印材料轴承和输送部件以及将显影在多个图像承载部件上的显影剂图像顺序地转印到转印材料轴承和输送部件上的转印材料的转印材料也是图像形成装置的一部分。 该设备还具有清洁转印材料轴承和输送部件的表面的清洁部件。 不转印到转印材料上的显影剂图像仅形成在多个图像承载部件中的转印材料轴承和输送部件的移动方向的下游侧的一个图像承载部件上。 显影剂图像通过转印构件转印到转印材料轴承和输送构件上，并且转印材料轴承和输送构件被移动，使得转印的显影剂图像到达清洁构件。

公开(公告)号：US06150758A

公开(公告)日：2000-11-21

申请号：US46925

申请日：1998-03-24

申请人： Satoshi Tamura

发明人： Satoshi Tamura

IPC分类号： H01J61/30 ,  H01J61/42 ,  H01J61/78 ,  H01J65/04 ,  H01J1/62 ,  H01J11/00 ,  H01J61/06 ,  H01J63/04 ,  H01J65/00

CPC分类号： H01J65/046 ,  H01J61/30 ,  H01J61/42 ,  H01J61/78

摘要： A noble gas discharge lamp of the present invention comprises an outer enclosure comprising a light emitting layer comprising at least one fluorescent substance, the light emitting layer formed therein and a pair of outer electrodes having tape shapes comprise a metal, which are adhered to the entire length of the outside of the outer enclosure so as to separate one outer electrode and the other outer electrode at a certain distance, and to form a first opening portion and a second opening portion; wherein the coated amount of fluorescent substance is in a range of 5 to 30 mg/cm.sup.2.

摘要翻译： 本发明的惰性气体放电灯包括外壳，其包括包含至少一种荧光物质的发光层，形成在其中的发光层和具有带状的一对外电极包括金属，其粘附到整个 从而将一个外电极和另一个外电极分开一定距离，并形成第一开口部分和第二开口部分; 荧光物质的涂布量在5〜30mg / cm 2的范围内。

公开(公告)号：US6101359A

公开(公告)日：2000-08-08

申请号：US196639

申请日：1998-11-19

申请人： Satoshi Tamura

发明人： Satoshi Tamura

IPC分类号： B41J2/525 ,  G03G15/00 ,  G03G15/01 ,  H04N1/50

CPC分类号： H04N1/506 ,  G03G15/0194 ,  G03G2215/0119

摘要： The present invention provides an image forming apparatus including a first image forming unit for forming an image on a recording material at a first image forming position, a second image forming unit for forming an image on the recording material at a second image forming position different from the first image forming position, a light permeable recording material bearing member for bearing the recording material and for conveying the recording material to the first and second positions, a position detecting unit for detecting a position of a test pattern formed on the recording material bearing member by the first and second image forming unit, and a light reflecting member adapted to reflect light passed through the recording material bearing member onto the position detecting unit and shiftable to a position where the light is not reflected onto the position detecting unit.

摘要翻译： 本发明提供一种图像形成装置，包括：第一图像形成单元，用于在第一图像形成位置处在记录材料上形成图像;第二图像形成单元，用于在不同于第二图像形成位置的第二图像形成位置在记录材料上形成图像; 第一图像形成位置，用于承载记录材料并用于将记录材料传送到第一和第二位置的透光记录材料承载部件，用于检测形成在记录材料承载部件上的测试图案的位置的位置检测单元 以及光反射部件，其适于将通过记录材料轴承部件的光反射到位置检测单元上，并且可移动到光不被反射到位置检测单元的位置。

公开(公告)号：US6034476A

公开(公告)日：2000-03-07

申请号：US54908

申请日：1998-04-03

申请人： Satoshi Tamura

发明人： Satoshi Tamura

IPC分类号： H01J65/00 ,  H01J61/067 ,  H01J61/30 ,  H01J65/04 ,  H01J11/00

CPC分类号： H01J65/046 ,  H01J61/0672 ,  H01J61/30

摘要： A noble gas discharge lamp of the present invention comprises an outer enclosure comprising a light emitting layer formed therein, and a pair of outer electrodes having tape shapes comprise a metal, which are adhered to the entire length of the outside of the outer enclosure so as to separate one outer electrode and the other outer electrode at a certain distance, and to form a first opening portion and a second opening portion; wherein the thickness of the outer enclosure is in a range of 0.2 to 0.7 mm, and at least one nonlinear portion is formed at at least one the side portion of the outer electrodes.

摘要翻译： 本发明的惰性气体放电灯包括外壳，其中形成有发光层，并且一对具有带状的外部电极包括金属，所述金属粘合到外壳的外部的整个长度上，以便 以一定距离分离一个外电极和另一外电极，并形成第一开口部分和第二开口部分; 其中所述外壳的厚度在0.2至0.7mm的范围内，并且至少一个非线性部分形成在所述外电极的至少一个侧部。