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    Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing a layer or the plasma in situ
    45.
    发明授权
    Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing a layer or the plasma in situ 有权
    用于制造等离子体的电极，具有所述电极的等离子体室以及原位分析或处理层或等离子体的方法

    公开(公告)号：US09478384B2

    公开(公告)日：2016-10-25

    申请号：US13703190

    申请日：2011-07-07

    申请人： Stefan Muthmann ,  Aad Gordijn ,  Reinhard Carius ,  Markus Huelsbeck ,  Dzmitry Hrunski

    发明人： Stefan Muthmann ,  Aad Gordijn ,  Reinhard Carius ,  Markus Huelsbeck ,  Dzmitry Hrunski

    IPC分类号： H01J37/04 ,  H01J37/22 ,  H01J37/32 ,  H01J1/02 ,  C23C14/52 ,  C23C16/44 ,  C23C16/509 ,  C23C16/52 ,  G01J3/44

    CPC分类号： H01J1/02 ,  C23C14/52 ,  C23C16/44 ,  C23C16/5096 ,  C23C16/52 ,  G01J3/44 ,  H01J37/32 ,  H01J37/32623 ,  H01J37/32972

    摘要： A RF electrode for generating, plasma in a plasma chamber comprising an optical feedthrough. A plasma chamber comprising an RF electrode and a counter-electrode with a substrate support for holding a substrate, wherein a high-frequency alternating field for generating the plasma can be formed between the RF electrode and the counter-electrode. The chamber comprising an RF electrode with an optical feedthrough. A method, for in situ analysis or in situ processing of a layer or plasma in a plasma chamber, wherein the layer is disposed on counter-electrode and an RF electrode is disposed on the side lacing the layer. Selection of an RF electrode having an optical feedthrough, and at least one step in which electromagnetic radiation is supplied through the optical feedthrough for purposes of analysis or processing of the layer or the plasma, and by at least one other step in which the scattered or emitted or reflected radiation is supplied to an analysis unit.

    摘要翻译： 一种用于在包括光学馈通的等离子体室中产生等离子体的RF电极。 一种包括RF电极和具有用于保持衬底的衬底支撑件的对电极的等离子体室，其中可以在RF电极和对电极之间形成用于产生等离子体的高频交变场。 该腔室包括具有光学馈通的RF电极。 一种用于等离子体室中的层或等离子体的原位分析或原位处理的方法，其中所述层设置在对电极上，并且RF电极设置在层叠该层的一侧。 选择具有光学馈通的RF电极，以及至少一个步骤，其中通过光学馈通提供电磁辐射用于分析或处理该层或等离子体，以及至少一个其它步骤，其中散射或 发射或反射的辐射被提供给分析单元。

    ALPHA ALUMINA THIN FILM FOR PROCESSING DIFFICULT-TO-CUT MATERIAL AND CAST IRON
    46.
    发明申请
    ALPHA ALUMINA THIN FILM FOR PROCESSING DIFFICULT-TO-CUT MATERIAL AND CAST IRON 有权
    用于加工不锈钢切割材料和铸铁的ALPHA铝薄膜

    公开(公告)号：US20160298232A1

    公开(公告)日：2016-10-13

    申请号：US15038474

    申请日：2014-11-26

    申请人： KORLOY INC.

    发明人： Jae Hoon KANG ,  Dong Youl LEE ,  Jung Wook KIM ,  Han Sung KIM ,  Sung Gu LEE ,  Jin Woo AHN ,  Sun Yong AHN

    IPC分类号： C23C16/06 ,  C09D1/00 ,  C23C16/44

    CPC分类号： C23C16/06 ,  C09D1/00 ,  C23C16/44 ,  C23C28/044 ,  C23C28/048

    摘要： Disclosed is an alpha alumina (α-Al2O3) thin film comprising the lower layer formed on the base material made from cemented carbide; and the α-Al2O3 thin film layer formed on the lower layer, wherein when the α-Al2O3 thin film layer is divided, from the total thickness (T) thereof, into a D1 layer which is from an interface layer to 0.15T, a D2 layer which is from 0.15T to 0.4T, and a D3 layer which is from 0.4T to 1T, an S1 (D3 layer grain size/D1 layer grain size) is 2-5.5 and an S2 (D2 layer grain size/D1 layer grain size) is 1.5-4.

    摘要翻译： 公开了一种包括由硬质合金制成的基材上形成的下层的α氧化铝（α-Al 2 O 3）薄膜; 和形成在下层上的α-Al 2 O 3薄膜层，其中当将α-Al 2 O 3薄膜层从其总厚度（T）分割成从界面层到D1T层的厚度为0.15T时， D2层，0.15T〜0.4T，D3层为0.4T〜1T，S1（D3层晶粒尺寸/ D1层晶粒尺寸）为2-5μm，S2（D2层粒径/ D1 层晶粒度）为1.5-4。

    Nanoscale Magnet Composite for High-Performance Permanent Magnets
    47.
    发明申请
    Nanoscale Magnet Composite for High-Performance Permanent Magnets 审中-公开
    用于高性能永磁体的纳米级磁铁复合材料

    公开(公告)号：US20160276879A1

    公开(公告)日：2016-09-22

    申请号：US15031309

    申请日：2014-08-19

    申请人： SIEMENS AKTIENGESELLSCHAFT

    发明人： Caroline Cassignol ,  Michael Krispin ,  Inga Zins

    IPC分类号： H02K1/02 ,  C23C16/44 ,  C23C14/22 ,  H01F7/02

    CPC分类号： H02K1/02 ,  B22F1/0025 ,  B22F2001/0037 ,  C22C2202/02 ,  C23C14/22 ,  C23C16/44 ,  H01F1/0045 ,  H01F1/0579 ,  H01F1/061 ,  H01F7/02

    摘要： A nanoparticle is disclosed that has an elongated core extending from a first end to a second end along a longitudinal axis and formed of at least one magnetizable and/or magnetized material. A first cover is formed on a first end of the core, and a second cover is formed on a second end of the core, the first cover and the second cover formed from a magnetocrystalline anisotropic material different than the material of the core. The core is uncovered by the first and second covers along a non-zero longitudinal distance between the first and second covers. In this way, the material of the covers can be reduced in relation to the generated coercive force, which may allow for efficient and reduced-cost permanent magnets.

    摘要翻译： 公开了一种纳米颗粒，其具有细长的芯，其从第一端沿着纵向轴线延伸到第二端并且由至少一个可磁化和/或磁化的材料形成。 第一盖形成在芯的第一端上，第二盖形成在芯的第二端上，第一盖和第二盖由不同于芯的材料的磁晶各向异性材料形成。 芯沿着第一和第二盖之间的非零纵向距离被第一和第二盖覆盖。 以这种方式，可以相对于产生的矫顽力减小盖的材料，这可以允许有效和降低成本的永磁体。

    Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
    49.
    发明授权
    Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber 有权
    热丝化学气相沉积（HWCVD）室的喷头设计

    公开(公告)号：US09416450B2

    公开(公告)日：2016-08-16

    申请号：US14052321

    申请日：2013-10-11

    申请人： APPLIED MATERIALS, INC.

    发明人： Hanh D. Nguyen ,  Joe Griffith Cruz

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/27

    CPC分类号： C23C16/45565 ,  C23C16/271 ,  C23C16/276 ,  C23C16/44

    摘要： Embodiments of process chambers and methods for performing HWCVD processes within such process chambers and depositing a thin film from two or more source compounds on a surface of a substrate are provided. In some embodiments, the process chamber includes a showerhead assembly disposed between a metal filament assembly and a substrate processing zone. The showerhead assembly includes a showerhead body and a dual-zone face plate with a plurality of first channels and second channels therein. A first source compound is delivered through the metal filament assembly to form radicals of the first source compound and pass through the first channels into the substrate processing zone without forming any plasma. A second source compound is delivered through the showerhead body into the second channels of the dual-zone face plate without passing through the metal filament assembly and without contacting the radicals until reaching the substrate processing zone.

    摘要翻译： 提供了处理室的实施例以及用于在这些处理室内执行HWCVD工艺的方法和在基板的表面上从两种或更多种源化合物沉积薄膜。 在一些实施例中，处理室包括布置在金属丝组件和衬底处理区之间的喷头组件。 淋浴头组件包括喷头体和双面面板，其中具有多个第一通道和第二通道。 第一源化合物通过金属丝组件输送以形成第一源化合物的自由基，并且通过第一通道进入衬底处理区而不形成任何等离子体。 第二源化合物通过喷头体输送到双区面板的第二通道中，而不通过金属丝组件，并且不与自由基接触直至到达衬底处理区。