公开(公告)号：US20130140526A1

公开(公告)日：2013-06-06

申请号：US13705700

申请日：2012-12-05

申请人： Samsung Electronics Co., Ltd.

发明人： Sang-Woo KIM ,  Hyeon-Jin SHIN ,  Jae-young CHOI

IPC分类号： C01B21/064 ,  H01L29/16

CPC分类号： C01B21/064 ,  C01B21/0646 ,  C01P2004/24 ,  C01P2004/60 ,  C30B25/165 ,  C30B29/40 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/518 ,  H01L29/778

摘要： A hexagonal boron nitride sheet having: a two-dimensional planar structure with a sp2 B—N covalent bond, a Van der Waals bond between boron-nitrogen layers, a root mean square surface roughness of about 2 nanometers or less, and a length of about 1 millimeter or greater.

摘要翻译： 具有：具有sp2BN共价键的二维平面结构，硼氮层之间的范德华力键，约2纳米或更小的均方根表面粗糙度和约1纳米的长度的六方氮化硼片 毫米以上。

公开(公告)号：US20120322168A1

公开(公告)日：2012-12-20

申请号：US13162416

申请日：2011-06-16

申请人： Heng Liu ,  Evgeny Vladimirovich Yakovlev

发明人： Heng Liu ,  Evgeny Vladimirovich Yakovlev

IPC分类号： H01L21/66 ,  C23C16/455 ,  C23C16/458 ,  C23C16/34

CPC分类号： C23C16/4584 ,  C23C16/45508 ,  C23C16/52 ,  C30B25/165 ,  C30B29/403

摘要： System and method for forming one or more materials. The system includes a susceptor component configured to rotate around a central axis, and a showerhead component that is located above the susceptor component and not in direct contact with the susceptor component. Additionally, the system includes one or more substrate holders located on the susceptor component and configured to rotate around the central axis and also rotate around corresponding holder axes respectively, and a central component. Moreover, the system includes one or more first inlets formed within the central component, one or more second inlets, and one or more third inlets formed within the showerhead component and located farther away from the central component than the one or more second inlets.

摘要翻译： 用于形成一种或多种材料的系统和方法。 该系统包括构造成围绕中心轴线旋转的基座部件和位于基座部件上方并且不与基座部件直接接触的喷头部件。 另外，该系统包括一个或多个基座保持器，其位于基座部件上并且被配置为围绕中心轴线旋转并且还分别围绕对应的保持器轴线以及中心部件旋转。 此外，该系统包括形成在中心部件内的一个或多个第一入口，一个或多个第二入口以及形成在喷头部件内并且位于比一个或多个第二入口更远离中心部件的一个或多个第三入口。

公开(公告)号：US08311070B2

公开(公告)日：2012-11-13

申请号：US13302266

申请日：2011-11-22

申请人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

发明人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01S5/2004 ,  H01S5/3216 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

摘要翻译： 氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN 层和在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其中n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8-2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。

公开(公告)号：US20120152166A1

公开(公告)日：2012-06-21

申请号：US13325259

申请日：2011-12-14

申请人： Yuuichirou TOKUDA ,  Kazukuni Hara ,  Jun Kojima

发明人： Yuuichirou TOKUDA ,  Kazukuni Hara ,  Jun Kojima

IPC分类号： C30B25/00

CPC分类号： C30B29/36 ,  C30B25/14 ,  C30B25/165 ,  Y10T117/10 ,  Y10T117/1008

摘要： An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a seed crystal by supplying a material gas from below the seed crystal. The apparatus includes a heating container and a base located in the heating container. The seed crystal is mounded on the base. The apparatus further includes a first inlet for causing a purge gas to flow along an inner wall surface of the heating container, a purge gas source for supplying the purge gas to the first inlet, a second inlet for causing the purge gas to flow along an outer wall surface of the base, and a mechanism for supporting the base and for supplying the purge gas to the base from below the base.

摘要翻译： 用于制造碳化硅单晶的装置通过从晶种下面供应原料气而在晶种上生长碳化硅单晶。 该装置包括加热容器和位于加热容器中的基座。 晶种沉积在基底上。 该装置还包括用于使吹扫气体沿着加热容器的内壁表面流动的第一入口，用于将净化气体供应到第一入口的净化气体源，用于使净化气体沿着 底座的外壁表面，以及用于支撑底座并用于从底部下方将净化气体供给到基座的机构。

公开(公告)号：US20120152165A1

公开(公告)日：2012-06-21

申请号：US13325233

申请日：2011-12-14

申请人： Kazukuni HARA ,  Yuuichirou Tokuda

发明人： Kazukuni HARA ,  Yuuichirou Tokuda

IPC分类号： C30B23/02

CPC分类号： C30B25/165 ,  C30B25/12 ,  C30B25/14 ,  C30B29/36

摘要： An apparatus for manufacturing a silicon carbide single crystal grows the silicon carbide single crystal on a surface of a seed crystal made from a silicon carbide single crystal substrate by supplying a material gas for silicon carbide from below the seed crystal. The apparatus includes a base having a first side and a second side opposite to the first side. The seed crystal is mounded on the first side of the base. The apparatus further includes a purge gas introduction mechanism for supporting the base and for supplying a purge gas to the base from the second side of the base. The base has a purge gas introduction path for discharging the supplied purge gas from the base toward an outer edge of the seed crystal.

摘要翻译： 用于制造碳化硅单晶的装置通过从晶种下面提供用于碳化硅的材料气体，在由碳化硅单晶衬底制成的晶种的表面上生长碳化硅单晶。 该装置包括具有与第一侧相对的第一侧和第二侧的底座。 晶种在基底的第一面上堆积。 该装置还包括净化气体引入机构，用于支撑基座并用于从基座的第二侧向基座提供净化气体。 基座具有吹扫气体引入路径，用于将供应的净化气体从基底朝向晶种的外边缘排出。

公开(公告)号：US20120024227A1

公开(公告)日：2012-02-02

申请号：US13270891

申请日：2011-10-11

申请人： Eiryo TAKASUKA ,  Toshio UEDA ,  Toshiyuki KURAMOTO ,  Masaki UENO

发明人： Eiryo TAKASUKA ,  Toshio UEDA ,  Toshiyuki KURAMOTO ,  Masaki UENO

IPC分类号： C23C16/00

CPC分类号： C23C16/455 ,  C23C16/4401 ,  C23C16/45517 ,  C23C16/45519 ,  C23C16/45565 ,  C30B25/165 ,  C30B29/403 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  Y10T428/31504

摘要： A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

公开(公告)号：US20110253049A1

公开(公告)日：2011-10-20

申请号：US13064810

申请日：2011-04-18

申请人： Masanao Fukuda ,  Kazuhiro Morimitsu

发明人： Masanao Fukuda ,  Kazuhiro Morimitsu

IPC分类号： C23C16/455

CPC分类号： C23C16/45591 ,  C23C16/45578 ,  C30B25/14 ,  C30B25/165

摘要： There is provided a semiconductor processing apparatus comprising a processing tube for housing a substrate support member that supports a plurality of substrates stacked at a prescribed pitch in a vertical direction; a gas supply part that extends in a direction in which the substrates are stacked in the processing tube and that has a plurality of gas supply openings; an exhaust part that opens onto the processing tube; a gas rectifying plate that is disposed in a space between a penumbra of the substrates supported on the substrate support member and an inner wall of the processing tube, and that extends from the gas supply part in a circumferential direction of the processing tube and in the direction in which the substrates are stacked; and a gas flow regulating part disposed in a space in the processing tube that is above a top-most gas supply opening and a top-most substrate and in a space in the processing tube that is below a bottom-most substrate and a bottom-most gas supply opening. A thin film formed on the substrate can be made more uniform.

摘要翻译： 提供了一种半导体处理装置，其包括：处理管，用于容纳基板支撑构件，所述基板支撑构件支撑以垂直方向以规定间距堆叠的多个基板; 气体供给部，其沿着所述基板堆叠在所述处理管中并具有多个气体供给开口的方向延伸; 通向处理管上的排气部分; 气体整流板，其设置在支撑在基板支撑部件上的基板的半暗区与处理管的内壁之间的空间中，并且从处理管的圆周方向从气体供给部延伸， 堆叠衬底的方向; 以及气体流量调节部，其设置在所述处理管的空间中，所述空间位于最上面的气体供给开口和最上面的基板之上，并且处于所述处理管的位于最下面的基板之下的空间中， 大部分供气口。 可以使形成在基板上的薄膜更均匀。

公开(公告)号：US20110177677A1

公开(公告)日：2011-07-21

申请号：US12689665

申请日：2010-01-19

申请人： Ching-Shun KU

发明人： Ching-Shun KU

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： C23C16/45525 ,  C23C16/407 ,  C30B25/165 ,  H01L21/0242 ,  H01L21/02554

摘要： A method of thin film epitaxial growth using atomic layer deposition is provided by introducing a first deposition precursor and a second deposition precursor into a chamber after a vent valve connected between the chamber and a vacuum pump is closed. The chamber is maintained in a thermal equilibrium state and a constant pressure as a result of keeping the first deposition precursor and the second deposition precursor inside the chamber thereby reducing deposition precursors consumption and achieving thin film epitaxial growth on the substrate.

摘要翻译： 在连接在腔室和真空泵之间的排气阀关闭之后，通过将第一沉积前体和第二沉积前体引入室中来提供使用原子层沉积的薄膜外延生长的方法。 通过将第一沉积前体和第二沉积前体保持在室内，由此使室保持在热平衡状态和恒定压力，从而减少沉积前体的消耗并在衬底上实现薄膜外延生长。

公开(公告)号：US07862657B2

公开(公告)日：2011-01-04

申请号：US11782052

申请日：2007-07-24

申请人： Masaaki Onomura ,  Yoshiyuki Harada

发明人： Masaaki Onomura ,  Yoshiyuki Harada

IPC分类号： C30B35/00 ,  C23C16/54

CPC分类号： C30B29/40 ,  C23C16/45572 ,  C23C16/45576 ,  C23C16/4584 ,  C30B25/165 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  Y10T117/10 ,  Y10T117/1016

摘要： A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the rotation axis side in a direction substantially parallel to a major surface of the substrate. The center of the substrate is located on a side nearer to the rotation axis than a position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized.

摘要翻译： 一种用于形成半导体膜的晶体生长方法，所述方法包括：在围绕旋转轴线旋转一个或多个基板的同时，使基板平行于基板的旋转轴侧的原料气体和载气从基板平行。 与通过原料气体的热分解形成的半导体膜的生长速度最大的位置相比，基板的中心位于比旋转轴更靠近的一侧。

公开(公告)号：US20100142577A1

公开(公告)日：2010-06-10

申请号：US12591178

申请日：2009-11-12

申请人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

发明人： Yuhzoh Tsuda ,  Masataka Ohta ,  Yoshie Fujishiro

IPC分类号： H01S5/34 ,  C30B25/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01S5/2004 ,  H01S5/3216 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

摘要翻译： 氮化物半导体激光器件包括n型AlGaN包覆层，GaN层，第一InGaN导光层，发光层，第二InGaN导光层，氮化物半导体中间层，p型AlGaN层 以及在氮化物半导体衬底上依次层叠的p型AlGaN覆盖层，其特征在于，所述n型AlGaN覆盖层的Al组成比为3-5％，厚度为1.8〜2.5μm; 第一和第二InGaN导光层的In组成比为3-6％; 第一导光层的厚度为120-160nm且大于第二导光层的厚度; p型AlGaN层与p型覆盖层接触，Al组成比为p-type覆层的10-35％以上。