公开(公告)号：US11761117B2

公开(公告)日：2023-09-19

申请号：US17447742

申请日：2021-09-15

Applicant: II-VI Delaware, Inc

Inventor： Avinash Gupta ,  Ilya Zwieback ,  Edward Semenas ,  Marcus Getkin ,  Patrick Flynn

IPC: C30B29/36 ,  C30B23/00 ,  C30B23/06

CPC classification number: C30B29/36 ,  C30B23/005 ,  C30B23/06 ,  C30B23/066

Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

公开(公告)号：US20230260841A1

公开(公告)日：2023-08-17

申请号：US17756615

申请日：2020-10-26

Applicant: Soitec

Inventor： Ionut Radu ,  Hugo Biard ,  Christophe Maleville ,  Eric Guiot ,  Didier Landru

IPC: H01L21/78 ,  H01L21/02 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/32

CPC classification number: H01L21/7813 ,  H01L21/02079 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02628 ,  C30B29/36 ,  C30B25/20 ,  C30B31/22 ,  C30B33/10 ,  C23C16/325

Abstract: A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

公开(公告)号：US11718926B2

公开(公告)日：2023-08-08

申请号：US17448895

申请日：2021-09-27

Applicant: HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Chung-Yi Chen

IPC: C30B23/06 ,  C30B23/00 ,  C30B35/00 ,  C30B29/36

CPC classification number: C30B23/066 ,  C30B23/005 ,  C30B29/36 ,  C30B35/00

Abstract: A method of single crystal growth includes disposing a polycrystalline source material in a chamber of a single crystal growth apparatus, disposing a seed layer in the chamber of the single crystal growth apparatus, wherein the seed layer is fixed below a lid of the single crystal growth apparatus, heating the polycrystalline source material by a heater of the single crystal growth apparatus to deposit a semiconductor material layer on the seed layer, and after depositing the semiconductor material layer, providing a coolant gas at a backside of the lid to cool down the seed layer and the semiconductor material layer.

公开(公告)号：US11708645B2

公开(公告)日：2023-07-25

申请号：US17646062

申请日：2021-12-27

Applicant: SHOWA DENKO K.K.

Inventor： Nobutoshi Sudoh ,  Rimpei Kindaichi

IPC: C30B23/02 ,  C30B29/36 ,  C30B35/00 ,  C30B23/00

CPC classification number: C30B29/36 ,  C30B23/025 ,  C30B35/002 ,  C30B23/002

Abstract: A silicon carbide single crystal manufacturing apparatus includes a crucible constituted by a crucible body and a crucible lid; and a base that is placed on the underside of the crucible lid and holds a silicon carbide seed crystal, wherein the base has a structure in which a plurality of graphite plates having anisotropy of the thermal expansion coefficient are laminated and bonded, and when viewed in a plan view from the lamination direction, in the plurality of graphite plates, the maximum directional axes of the thermal expansion coefficient between adjacent graphite plates are orthogonal to each other or the maximum directional axes intersect within an angle range of ±15° from orthogonal.

公开(公告)号：US20230193508A1

公开(公告)日：2023-06-22

申请号：US18172202

申请日：2023-02-21

Applicant: SICRYSTAL GMBH

Inventor： Michael VOGEL ,  Bernhard ECKER ,  Ralf MÜLLER ,  Matthias STOCKMEIER ,  Arnd-Dietrich WEBER

IPC: C30B23/02 ,  C30B29/06 ,  C30B29/36

CPC classification number: C30B23/025 ,  C30B29/06 ,  C30B29/36 ,  Y10T428/24942

Abstract: The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1·1018 cm−3 from the mean concentration of this dopant in the peripheral region (104).

公开(公告)号：US20230167582A1

公开(公告)日：2023-06-01

申请号：US17861186

申请日：2022-07-09

Applicant: Pallidus, Inc.

Inventor： Douglas Dukes ,  Darren Hansen ,  Mark Loboda ,  Mark Land ,  Victor Torres ,  Juan Carlos Rojo

IPC: C30B29/36 ,  C30B25/02

CPC classification number: C30B29/36 ,  C30B25/02

Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

公开(公告)号：US11655561B2

公开(公告)日：2023-05-23

申请号：US16553302

申请日：2019-08-28

Applicant: SHOWA DENKO K.K.

Inventor： Hiromasa Suo ,  Kazuma Eto ,  Tomohisa Kato

IPC: C30B29/36 ,  C01B32/956 ,  C30B23/06

CPC classification number: C30B29/36 ,  C01B32/956 ,  C30B23/066 ,  C01P2002/54 ,  C01P2006/40

Abstract: In an n-type 4H-SiC single crystal substrate of the present disclosure, the concentration of the element N as a donor and the concentration of the element B as an acceptor are both 3×1018/cm3 or more, and a threading dislocation density is less than 4,000/cm2.

公开(公告)号：US20190186043A1

公开(公告)日：2019-06-20

申请号：US15913980

申请日：2018-03-07

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： DAI-LIANG MA ,  TSAO-CHUN PENG ,  CHENG-JUNG KO ,  BANG-YING YU ,  CHIH-WEI KUO ,  YING-CONG ZHAO

IPC: C30B29/36 ,  C30B29/40 ,  H01L21/324

CPC classification number: C30B29/36 ,  C30B29/403 ,  H01L21/324

Abstract: A device for measuring distribution of thermal field in a crucible comprises a crucible comprising an upper lid, a body, a growth chamber and a material source zone; a thermally insulating material disposed outside the crucible; a movable heating component for heating the crucible; a plurality of thermocouples enclosed by insulating, high temperature resistant material and disposed in the crucible after being inserted into a plurality of holes on the upper lid to measure distribution of thermal field in the crucible. The thermocouples enclosed by insulating, high temperature resistant material are effective in measuring and adjusting temperature distribution in the crucible to achieve optimal temperature distribution for crystal growth in the crucible.

公开(公告)号：US20190127879A1

公开(公告)日：2019-05-02

申请号：US16233390

申请日：2018-12-27

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke MUTO ,  Jun NORIMATSU

IPC: C30B25/20 ,  H01L21/687 ,  C23C16/458 ,  H01L21/02 ,  C23C16/455 ,  C30B25/16 ,  C23C16/32 ,  C30B29/36 ,  C30B25/12 ,  H01L29/16

CPC classification number: C30B25/20 ,  C23C16/325 ,  C23C16/45504 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L29/1608

Abstract: Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.

公开(公告)号：US20180308679A1

公开(公告)日：2018-10-25

申请号：US15962685

申请日：2018-04-25

Applicant: DISCO CORPORATION

Inventor： Kazuya Hirata

IPC: H01L21/02 ,  B23K26/00 ,  B24B7/22 ,  C30B29/36 ,  C30B33/02 ,  H01L29/16

CPC classification number: H01L21/02013 ,  B23K26/3576 ,  B23K26/53 ,  B24B7/228 ,  C30B29/36 ,  C30B33/02 ,  H01L29/1608

Abstract: A SiC wafer is produced from a single crystal SiC ingot. A focal point of a pulsed laser beam having a transmission wavelength to the ingot is set inside the ingot at a predetermined depth from a flat surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced. The pulsed laser beam is applied to the ingot to thereby form a separation layer for separating the wafer from the ingot. The wafer is separated from the ingot along the separation layer, and a flat surface is formed by grinding an upper surface of the ingot as a rough separation surface left after separating the wafer, thereby removing the roughness of the upper surface of the ingot to flatten the upper surface of the ingot.