公开(公告)号：US06168491A

公开(公告)日：2001-01-02

申请号：US09448905

申请日：1999-11-29

Applicant: David S. Y. Hsu ,  Henry F. Gray

Inventor： David S. Y. Hsu ,  Henry F. Gray

IPC: H01J902

CPC classification number: H01J9/025 ,  H01J2201/30423

Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

Abstract translation: 场发射极单元包括垂直于栅极层的薄膜边缘发射极。 场致发射体是包含夹在两个保护层之间的低功函数材料的多层结构。 场发射器可以由包括导电衬底层，绝缘层，支座层和栅极层的复合起始结构制成，其中穿孔从栅极层延伸到衬底层中。 发射体材料通过化学束沉积沿着穿孔的侧壁共形沉积。 或者，起始材料可以是其上具有突起的导电基底。 顺序地沉积发射极层，隔离层，绝缘层和栅极层，并且优先除去其中不需要的部分以提供所需的结构。

公开(公告)号：US6017257A

公开(公告)日：2000-01-25

申请号：US990887

申请日：1997-12-15

Applicant: Michael D Potter

Inventor： Michael D Potter

IPC: H01J29/94 ,  H01J9/00

CPC classification number: H01J29/94 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.

Abstract translation: 自吸电子场发射器具有由用于发射电子的低功函数材料形成的第一部分，并且其具有作为低电阻电导体和吸气表面的整体第二部分。 自吸收发射体通过将低功函数材料的薄膜平行于衬底设置并且将低电阻吸气材料的薄膜平行于衬底设置并与薄膜接触而形成 低功能材料。 自吸式发射器特别适用于横向场发射装置。 优选的发射极结构具有锥形边缘，低功函数材料的显着部分在吸气和低电阻材料的边缘之外延伸一小段距离。 还公开了专门用于在制造微电子场发射器件的同时形成自吸电子场发射体的制造工艺。

公开(公告)号：US5982081A

公开(公告)日：1999-11-09

申请号：US759678

申请日：1996-12-06

Applicant: Johnny Kin On Sin ,  Bao Ping Wang

Inventor： Johnny Kin On Sin ,  Bao Ping Wang

IPC: H01J3/02 ,  H01J1/46 ,  H01J19/14 ,  H01J21/10

CPC classification number: H01J29/467 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30423

Abstract: Field emitter structures are described for use in arrays forming field emission displays. The field emitter structures may be either single or perferably double-gate structures. To enhance the field emission current density the emitters are formed so as to be elongate so as to form a race-track shape. The emitter layer may also be provided with sharply defined edges in order to improve electron emission.

Abstract translation: 描述场发射器结构用于形成场发射显示器的阵列。 场发射器结构可以是单栅极或优选的双栅极结构。 为了增强场发射电流密度，发射体形成为细长的，以形成赛道形状。 为了改善电子发射，发射极层也可以设置有锐利的边缘。

公开(公告)号：US5874808A

公开(公告)日：1999-02-23

申请号：US916370

申请日：1997-08-21

Applicant: Heinz H. Busta ,  Jay E. Pogemiller

Inventor： Heinz H. Busta ,  Jay E. Pogemiller

IPC: H01J3/02 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J2201/30423

Abstract: A low turn-on voltage volcano-shaped field emitter, a method of fabrication, and integration into an addressable array suitable for applications in field emitter displays and other electron generating applications are disclosed. In one embodiment, the device is fabricated using a stepped insulator in which the distance between the gate and the emitter near the emission surface is significantly reduced with respect to the thickness of the insulator and separates the gate from the emitter. By keeping the large gate-to-emitter distance, the device capacitance is reduced and fabrication yield is increased, since pinholes in the insulator are significantly reduced. In another embodiment of the present invention, the integration of the device into an addressable array suitable for electron emission is described. The array incorporates a network of resistors which assures uniform emission.

Abstract translation: 公开了一种低导通电压火山形场发射器，制造方法以及集成到适用于场致发射显示器和其它电子发生应用中的可寻址阵列。 在一个实施例中，使用阶梯式绝缘体制造器件，其中相对于绝缘体的厚度，在发射表面附近的栅极和发射极之间的距离显着减小，并且将栅极与发射极分离。 通过保持大的栅 - 发射极距离，由于绝缘体中的针孔显着减小，器件电容减小并且制造成品率增加。 在本发明的另一实施例中，描述了将器件集成到适用于电子发射的寻址阵列中。 该阵列包含一个确保均匀发射的电阻网络。

公开(公告)号：US5848925A

公开(公告)日：1998-12-15

申请号：US773121

申请日：1996-12-26

Applicant: Emmett Howard ,  Curtis D. Moyer ,  James E. Jaskie

Inventor： Emmett Howard ,  Curtis D. Moyer ,  James E. Jaskie

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A method for fabricating an array (300) of edge electron emitters (530) includes the steps of: forming first and second grooves (310, 320) in first and second opposing planar surfaces (101, 102), respectively, of a supporting substrate (110) to form an array of openings (330) therethrough; forming a dielectric layer (122) on the first planar surface (101) and an emission structure (120) on the dielectric layer (122); forming a plurality of cathodes (132) on the emission structure (120); forming gates (515) on a portion of the surfaces defining the first grooves (310); forming a masking film (710) on the cathodes (132)/emission structure (120); removing an outer, radial portion (726) of the masking film (710); etching the emission structure (120), the retracted masking film (710) forming a mask, thereby providing a predetermined configuration of the edge electron emitters (530) with respect to the gates (515) and cathodes (132).

Abstract translation: 一种用于制造边缘电子发射器（530）的阵列（300）的方法包括以下步骤：分别在支撑衬底的第一和第二相对的平坦表面（101,102）中形成第一和第二凹槽（310,320） （110）以形成穿过其中的开口阵列（330）; 在所述第一平坦表面（101）上形成介电层（122）和所述电介质层（122）上的发射结构（120）; 在所述发射结构（120）上形成多个阴极（132）; 在限定第一凹槽（310）的表面的一部分上形成浇口（515）; 在阴极（132）/发射结构（120）上形成掩模膜（710）; 去除所述掩蔽膜（710）的外径向部分（726）; 蚀刻发射结构（120），缩回的掩模膜（710）形成掩模，从而相对于栅极（515）和阴极（132）提供边缘电子发射器（530）的预定配置。

公开(公告)号：US5616061A

公开(公告)日：1997-04-01

申请号：US498507

申请日：1995-07-05

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J9/02 ,  H01J31/12 ,  H01J1/53

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A lateral-emitter electron field-emission display device structure incorporates a thin-film emitter having an emitting edge and extending into in direct contact with a non-conducting or very high resistivity phosphor, thereby eliminating the gap between the emitter and the phosphor. Such a gap has been a part of all field-emission display devices in the prior art. The ultra-thin-film lateral emitter of the new structure is deposited in a plane parallel to the device's substrate and has an inherently small radius of curvature at its emitting edge. A fabrication process specially adapted to make the new structure includes a directional trench etch, which both defines the emitting edge and provides an opening to receive a non-conducting phosphor. This phosphor covers an anode and is automatically aligned in contact with the emitter edge. When an electrical bias voltage is applied between the emitter and anode, electrons are injected directly into the phosphor material from the emitter edge, exciting cathodoluminescence in the phosphor to emit light which is visible in a wide range of viewing angles. With minor variations in the fabrication process, a lateral-emitter electron field emission display device may be made with an extremely small emitter-phosphor gap, having a width less than 100 times the thickness of the ultra-thin emitter. Embodiments in which the gap width is zero are characterized as edge-contact light-emitting diodes (or triodes or tetrodes if they include control electrodes).

Abstract translation: 横向发射极电子场发射显示器件结构包括具有发射边缘并延伸成与非导电或非常高电阻率的磷光体直接接触的薄膜发射器，从而消除了发射极和磷光体之间的间隙。 这样的间隙已经是现有技术中的所有场致发射显示装置的一部分。 新结构的超薄膜横向发射体沉积在平行于器件的衬底的平面中，并且在其发射边缘处具有固有的小的曲率半径。 专门用于制造新结构的制造工艺包括定向沟槽蚀刻，其定义了发射边缘并且提供用于接收非导电磷光体的开口。 该荧光体覆盖阳极并自动对准与发射极边缘接触。 当在发射极和阳极之间施加电偏压时，电子从发射极边缘直接注入到荧光体材料中，激发荧光体中的阴极发光，发射在宽视角范围内可见的光。 在制造工艺中有微小变化的情况下，横向发射极电子场发射显示装置可以制造成具有极小的发射 - 磷光体间隙，其宽度小于超薄发射极的厚度的100倍。 间隙宽度为零的实施例的特征在于边缘接触式发光二极管（或三极管或四极管，如果它们包括控制电极）。

公开(公告)号：US09251989B2

公开(公告)日：2016-02-02

申请号：US14738949

申请日：2015-06-15

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Yang Wei ,  Shou-Shan Fan

IPC: H01J9/02 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: H01J9/025 ,  B82Y40/00 ,  B82Y99/00 ,  H01J2201/30423 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/939

Abstract: A method of making a field emitter includes following steps. A carbon nanotube layer is provided, and the carbon nanotube layer includes a first surface and a second surface opposite to each other. A carbon nanotube composite layer is formed via electroplating a first metal layer on the first surface and electroplating a second metal layer on the second surface. A first carbon nanotube layer and a second carbon nanotube layer is formed by separating apart the carbon nanotube composite layer, wherein a fracture surface is formed in the carbon nanotube composite layer, a number of first carbon nanotubes in the first carbon nanotube layer are exposed from the fracture surface, and a number of second carbon nanotubes in the second carbon nanotube layer are exposed from the fracture surface.

Abstract translation: 制造场发射体的方法包括以下步骤。 提供碳纳米管层，碳纳米管层包括彼此相对的第一表面和第二表面。 通过在第一表面上电镀第一金属层并在第二表面上电镀第二金属层来形成碳纳米管复合层。 第一碳纳米管层和第二碳纳米管层通过分离碳纳米管复合层形成，其中在碳纳米管复合层中形成断裂面，第一碳纳米管层中的多个第一碳纳米管暴露于 断裂面和第二碳纳米管层中的多个第二碳纳米管从断裂面露出。

公开(公告)号：US20150060758A1

公开(公告)日：2015-03-05

申请号：US14474213

申请日：2014-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donggu LEE ,  Shanghyeun PARK ,  Yongchul KIM ,  Ilhwan KIM ,  Taewon JEONG

IPC: H01J1/308 ,  H01J9/02 ,  H01J1/304

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J2201/30423 ,  H01J2201/30461

Abstract: A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.

Abstract translation: 场发射器件可以包括：发射器，包括阴极电极和由阴极电极支撑的电子发射源; 围绕发射极的绝缘间隔物，绝缘间隔物形成作为从电子发射源发射的电子的路径的开口; 和/或围绕开口的栅电极。 电子发射源可以包括在阴极中朝向开口垂直支撑的多个石墨烯薄膜。

公开(公告)号：US20130299773A1

公开(公告)日：2013-11-14

申请号：US13888493

申请日：2013-05-07

Applicant: UNIVERSITY OF PITTSBURGH - OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION

Inventor： HONG KOO KIM ,  SIWAPON SRISONPHAN

IPC: H01L29/76 ,  H01L29/66

CPC classification number: H01J1/3046 ,  H01J1/3042 ,  H01J3/022 ,  H01J19/24 ,  H01J2201/30423 ,  H01L27/1446 ,  H01L27/146 ,  H01L29/66181 ,  H01L29/66439 ,  H01L29/7613 ,  H01L29/94 ,  H01L31/022466 ,  H01L31/06 ,  H01L31/062 ,  H01L31/08 ,  H01L31/101 ,  H01L31/113 ,  Y02E10/50

Abstract: An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

Abstract translation: 一种电子器件，包括设置在导电层之间的第一导电层，第二导电层和绝缘层。 至少一个侧壁从第一导电层延伸到第二导电层，并且包括第一导电层，第二导电层和绝缘层的至少一部分。 在第一和第二导电层之间施加偏置电压，其中响应于偏置电压，至少在第一导电层和第二导电层中的至少一个中引入二维电子系统，并且其中来自二维电子 由于库仑排斥的结果，侧壁侧壁从第一导电层和第二导电层中的一个向空气移动，导致第一导电层和第二导电层中的另一个。

公开(公告)号：US20110084590A1

公开(公告)日：2011-04-14

申请号：US12897338

申请日：2010-10-04

Applicant: Hideyasu Tashiro ,  Yohei Hashizume ,  Taro Hiroike ,  Fumikazu Kobayashi

Inventor： Hideyasu Tashiro ,  Yohei Hashizume ,  Taro Hiroike ,  Fumikazu Kobayashi

IPC: H01J1/02

CPC classification number: H01J1/3046 ,  H01J3/021 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2203/02 ,  H01J2329/0423

Abstract: An electron-emitting device according to the present invention, comprises: an insulating member having a top face, a side face and a recess portion formed between the top face and the side face; a cathode electrode which is disposed on the side face and has an electron emitting portion located in a boundary portion between the side face and the recess portion; and a gate electrode which is disposed on the top face and of which an edge faces the electron emitting portion, wherein the boundary portion in which the electron emitting portion is located has concavity and convexity in a direction parallel to the top face.

Abstract translation: 根据本发明的电子发射器件包括：绝缘构件，其具有形成在顶面和侧面之间的顶面，侧面和凹部; 阴极，其设置在所述侧面上，并且具有位于所述侧面和所述凹部之间的边界部分中的电子发射部分; 以及栅电极，其设置在所述顶面上并且其边缘面向所述电子发射部分，其中所述电子发射部分所在的所述边界部分在与所述顶面平行的方向上具有凹凸。