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公开(公告)号：US07306674B2
公开(公告)日：2007-12-11
申请号：US10864768
申请日：2004-06-10
Applicant: Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
Inventor： Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
IPC: C30B29/04
CPC classification number: H01J1/3048 , B82Y10/00 , B82Y30/00 , C07C4/00 , C07C7/04 , C07C7/12 , C07C7/135 , C07C13/64 , C07C17/10 , C07C17/16 , C07C17/383 , C07C17/395 , C07C23/20 , C07C39/17 , C07C47/347 , C07C49/423 , C07C205/05 , C07C211/50 , C07C2603/54 , C07C2603/90 , C08G61/00 , C08G61/02 , C08G83/00 , C08L65/00 , H01J2201/30457 , H01L23/3732 , H01L24/45 , H01L24/48 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48247 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , Y10T428/30 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
Abstract: Novel uses of higher diamondoids are disclosed. Specifically, higher diamondoids may be used to nucleate diamond films and diamond-like carbon films. Such higher diamondoids include iso-tetramantane [1(2)3], anti-tetramantane [121], the two enantiomers of skew-tetramantane [123], the ten possible pentamantane, the thirty nine possible hexamantanes, the one hundred sixty heptamantanes, as well as the various octamantanes, nonamantanes, decamantanes, and undecamantanes.
Abstract translation: 公开了高级金刚石的新用途。 具体来说，较高的金刚石可用于使金刚石膜和类金刚石碳膜成核。 这种较高的金刚石包括异四聚烷[1（2）3]，抗四聚烷[121]，歪斜 - 四聚烷[123]的两种对映体，十种可能的五金刚烷，三十九种可能的六价烷，一百六十七金刚烷， 以及各种八甲烷，非金刚烷，十九烷和非金刚烷。
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公开(公告)号：US07160529B2
公开(公告)日：2007-01-09
申请号：US10784885
申请日：2004-02-24
Applicant: Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
Inventor： Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
IPC: C30B29/05
CPC classification number: H01J1/3048 , B82Y10/00 , B82Y30/00 , C07C4/00 , C07C7/04 , C07C7/12 , C07C7/135 , C07C13/64 , C07C17/10 , C07C17/16 , C07C17/383 , C07C17/395 , C07C23/20 , C07C39/17 , C07C47/347 , C07C49/423 , C07C205/05 , C07C211/50 , C07C2603/54 , C07C2603/90 , C08G61/00 , C08G61/02 , C08G83/00 , C08L65/00 , H01J2201/30457 , H01L23/3732 , H01L24/45 , H01L24/48 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48247 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.
Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。
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公开(公告)号：US20060284539A1
公开(公告)日：2006-12-21
申请号：US11304064
申请日：2005-12-14
Applicant: Chien-Min Sung
Inventor： Chien-Min Sung
CPC classification number: H01J63/06 , H01J2201/30457 , H01L37/00
Abstract: Diamond-like carbon based devices and methods of making and using the same which have improved electron emission and increased reliability. The device can include an anode with a layer of diamond-like carbon material such as amorphous diamond coated over at least a portion of the anode and a cathode. An intermediate member can be electrically coupled between the diamond-like carbon material and the cathode. Various additional layers and configurations can allow for improved performance such as multiple cathode layers and/or multiple intermediate layers. The presence of diamond-like carbon on the anode provides significantly improved electron emission with or without diamond-like carbon on the cathode. The devices can be configured as thermoelectric conversion devices such as an electrical generator or a cooling device, light emitting devices, or other electronic devices and can be conveniently formed.
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公开(公告)号：US07061073B2
公开(公告)日：2006-06-13
申请号：US10784884
申请日：2004-02-24
Applicant: Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
Inventor： Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
IPC: H01L29/00
CPC classification number: H01J1/3048 , B82Y10/00 , B82Y30/00 , C07C4/00 , C07C7/04 , C07C7/12 , C07C7/135 , C07C13/64 , C07C17/10 , C07C17/16 , C07C17/383 , C07C17/395 , C07C23/20 , C07C39/17 , C07C47/347 , C07C49/423 , C07C205/05 , C07C211/50 , C07C2603/54 , C07C2603/90 , C08G61/00 , C08G61/02 , C08G83/00 , C08L65/00 , H01J2201/30457 , H01L23/3732 , H01L24/45 , H01L24/48 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48247 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.
Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。
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公开(公告)号：US07026750B2
公开(公告)日：2006-04-11
申请号：US10667149
申请日：2003-09-22
Applicant: Yoshiki Nishibayashi , Takahiro Imai , Yutaka Ando
Inventor： Yoshiki Nishibayashi , Takahiro Imai , Yutaka Ando
IPC: H01J1/14
CPC classification number: H01J1/3044 , H01J2201/30457
Abstract: An electron emission element of the present invention comprises a substrate, and a protrusion protruding from the substrate and including boron-doped diamond. The protrusion comprises a columnar body. And a tip portion of the protrusion comprises an acicular body sticking out therefrom. The distance r [cm] between a center axis and a side face in the columnar body and the boron concentration Nb [cm−3] in the diamond satisfy the relationship represented by the following formula (1): r > 10 4 Nb . ( 1 )
Abstract translation: 本发明的电子发射元件包括基底和从基底突出并包含掺杂硼的金刚石的突起。 突起包括柱状体。 并且突起的尖端部分包括从其伸出的针状体。 菱形中的中心轴和侧面之间的距离r [cm]和菱形中的硼浓度Nb [cm -3]满足下式（1）所示的关系：
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Patent Agency Ranking
公开(公告)号：US20050062389A1
公开(公告)日：2005-03-24
申请号：US10833803
申请日：2004-04-28
Applicant: Jimmy Davidson , Wang Kang , David Kerns , Mickey Howell
Inventor： Jimmy Davidson , Wang Kang , David Kerns , Mickey Howell
IPC: G01L9/00 , G01P15/08 , H01J1/30 , H01J1/304 , H01J3/02 , H01J9/02 , H01J19/02 , H01J19/24 , H01J31/12
CPC classification number: H01J9/025 , B82Y10/00 , G01L9/0041 , G01L9/0047 , G01P15/0802 , G01P15/0894 , G01P2015/0828 , H01J1/3042 , H01J1/3044 , H01J3/022 , H01J31/127 , H01J2201/30407 , H01J2201/30457
Abstract: Diamond microtip field emitters are used in triode vacuum microelectronic devices, sensors and displays. Diamond triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.
Abstract translation: 金刚石微尖端场发射器用于三极管真空微电子器件，传感器和显示器。 可以制造具有整体阳极和栅格结构的金刚石三极管器件。 在制造工艺中在发射体上形成超尖尖，其中金刚石以两步沉积顺序沉积到模腔中。 在沉积金刚石期间，仔细控制碳石墨含量以增强排放性能。 尖端或发射器通过后制造处理来进一步提高性能。
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公开(公告)号：US20040262744A1
公开(公告)日：2004-12-30
申请号：US10892037
申请日：2004-07-14
Applicant: Chevron U.S.A. Inc.
Inventor： Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
IPC: H01L031/0312 , H01L023/34 , H01L023/58 , H01L029/06
CPC classification number: C07C4/00 , B82Y10/00 , B82Y30/00 , C07C7/04 , C07C7/12 , C07C7/135 , C07C13/64 , C07C17/10 , C07C17/16 , C07C17/383 , C07C17/395 , C07C23/20 , C07C39/17 , C07C47/347 , C07C49/423 , C07C205/05 , C07C211/50 , C07C2603/54 , C07C2603/90 , C08G61/00 , C08G61/02 , C08G83/00 , C08L65/00 , H01J1/3048 , H01J2201/30457 , H01L23/3732 , H01L23/4334 , H01L23/49513 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L35/22 , H01L2224/32245 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.
Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。
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公开(公告)号：US06819035B2
公开(公告)日：2004-11-16
申请号：US10733714
申请日：2003-12-11
Applicant: Zvi Yaniv , Richard Lee Fink , Zhidan Li Tolt
Inventor： Zvi Yaniv , Richard Lee Fink , Zhidan Li Tolt
IPC: H01J1304
CPC classification number: H01J1/304 , B82Y10/00 , B82Y15/00 , H01J2201/30457
Abstract: A carbon film having an area of insulating material surrounded by an area of conducing material, and an area of material between the area of insulating material and the area of conducting material having a graded dielectric constant which varies from high to low from the area of insulating material to the area of conducting material.
Abstract translation: 具有由导电材料区域包围的绝缘材料区域的碳膜，以及绝缘材料区域和导电材料区域之间的材料区域，其具有从绝缘区域的高低变化的梯度介电常数 材料到导电材料区域。
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公开(公告)号：US20040198048A1
公开(公告)日：2004-10-07
申请号：US10784885
申请日：2004-02-24
Applicant: Chevron U.S.A. Inc.
Inventor： Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
IPC: H01L021/302 , H01L021/461
CPC classification number: H01J1/3048 , B82Y10/00 , B82Y30/00 , C07C4/00 , C07C7/04 , C07C7/12 , C07C7/135 , C07C13/64 , C07C17/10 , C07C17/16 , C07C17/383 , C07C17/395 , C07C23/20 , C07C39/17 , C07C47/347 , C07C49/423 , C07C205/05 , C07C211/50 , C07C2603/54 , C07C2603/90 , C08G61/00 , C08G61/02 , C08G83/00 , C08L65/00 , H01J2201/30457 , H01L23/3732 , H01L24/45 , H01L24/48 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48247 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.
Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。
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公开(公告)号：US20040095051A1
公开(公告)日：2004-05-20
申请号：US10667149
申请日：2003-09-22
Inventor： Yoshiki Nishibayashi , Takahiro Imai , Yutaka Ando
IPC: H01J001/02 , H01J001/14
CPC classification number: H01J1/3044 , H01J2201/30457
Abstract: An electron emission element of the present invention comprises a substrate, and a protrusion protruding from the substrate and including boron-doped diamond. The protrusion comprises a columnar body. And a tip portion of the protrusion comprises an acicular body sticking out therefrom. The distance r nullcmnull between a center axis and a side face in the columnar body and the boron concentration Nb nullcmnull3null in the diamond satisfy the relationship represented by the following formula (1): 1 r > 10 4 Nb . ( 1 )
Abstract translation: 本发明的电子发射元件包括基底和从基底突出并包含掺杂硼的金刚石的突起。 突起包括柱状体。 并且突起的尖端部分包括从其伸出的针状体。 菱形中的中心轴和侧面之间的距离r [cm]和菱形中的硼浓度Nb [cm -3]满足由下式（1）表示的关系：
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