公开(公告)号：US20190222781A1

公开(公告)日：2019-07-18

申请号：US16115987

申请日：2018-08-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JUNG WOOK LIM ,  Eun Sub Shim ,  Kyung Ho Lee

IPC分类号： H04N5/357 ,  H01L27/146

CPC分类号： H04N5/357 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/378

摘要： An image sensor includes a photoelectric conversion unit configured to receive light to generate an electric charge and provide the electric charge to a first node, a transfer transistor configured to provide a voltage level of the first node to a floating diffusion node in response to a first signal, a booster configured to increase a voltage level of the floating diffusion node in response to a second signal, a source follower transistor configured to provide the voltage level of the floating diffusion node to a second node, and a selection transistor configured to provide a voltage level of the second node to a pixel output terminal in response to a third signal. After the selection transistor is turned on, the booster is enabled, and before the transfer transistor is turned on, the booster is disabled.

公开(公告)号：US20190206923A1

公开(公告)日：2019-07-04

申请号：US16290756

申请日：2019-03-01

申请人： SiOnyx, LLC

发明人： Jutao Jiang ,  Jeffrey McKee ,  Martin U. Pralle

IPC分类号： H01L27/146 ,  H04N5/376 ,  H01L25/16 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/225

CPC分类号： H01L27/14649 ,  H01L25/167 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14647 ,  H01L2924/0002 ,  H04N5/2256 ,  H04N5/37452 ,  H04N5/3765 ,  H04N9/045 ,  H01L2924/00

摘要： A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

公开(公告)号：US20190206911A1

公开(公告)日：2019-07-04

申请号：US16295719

申请日：2019-03-07

申请人： SONY CORPORATION

发明人： Takeshi YANAGITA ,  Itaru OSHIYAMA ,  Takayuki ENOMOTO ,  Harumi IKEDA ,  Shinichiro IZAWA ,  Atsuhiko YAMAMOTO ,  Kazunobu OTA

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

摘要： The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

公开(公告)号：US20190189818A1

公开(公告)日：2019-06-20

申请号：US15843136

申请日：2017-12-15

申请人： Atomera Incorporated

发明人： YI-ANN CHEN ,  Abid Husain ,  Hideki Takeuchi

IPC分类号： H01L31/0352 ,  H01L27/146 ,  H01L31/109 ,  H01L31/18

CPC分类号： H01L31/035254 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14692 ,  H01L31/109 ,  H01L31/1804

摘要： A CMOS image sensor may include a semiconductor substrate having a first conductivity type, and a plurality of laterally adjacent photodiodes formed in the substrate. Each photodiode may include a retrograde well extending downward into the substrate from a surface thereof and having a second conductivity type, a first well around a periphery of the retrograde well having the second conductivity type, and a second well within the retrograde well having the first conductivity type. Each photodiode may further include first and second superlattices respectively overlying each of the first and second wells. Each of the first and second superlattices may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

公开(公告)号：US20190165010A1

公开(公告)日：2019-05-30

申请号：US15827554

申请日：2017-11-30

申请人： STMicroelectronics (Research & Development) Limited

发明人： Jeffrey M. Raynor

IPC分类号： H01L27/146 ,  H01L31/105 ,  H01L31/103

CPC分类号： H01L27/1463 ,  H01L27/1461 ,  H01L27/14625 ,  H01L27/14643 ,  H01L31/02161 ,  H01L31/035272 ,  H01L31/1013 ,  H01L31/103 ,  H01L31/105 ,  H04N5/374 ,  H04N5/378

摘要： In an embodiment, an image sensor includes a semiconductor substrate, an epitaxial layer disposed over the semiconductor substrate, a first heavily doped region disposed in the epitaxial layer, and a shallow trench isolation region disposed in the epitaxial layer and surrounding the first heavily doped region. The semiconductor substrate and the epitaxial layer are of a first doping type and the semiconductor substrate is coupled to a reference potential node. The first heavily doped region is of a second doping type opposite to the first doping type. The epitaxial layer, the first heavily doped region, and the shallow trench isolation region are part of a p-n junction photodiode configured to operate in the near ultraviolet region.

公开(公告)号：US20190096949A1

公开(公告)日：2019-03-28

申请号：US16143397

申请日：2018-09-26

申请人： EXPANTRUM OPTOELECTRONICS

发明人： Zhongshou HUANG

IPC分类号： H01L27/146 ,  H01L27/30 ,  H01L31/0224 ,  H01L31/0376

CPC分类号： H01L27/14652 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14665 ,  H01L27/28 ,  H01L27/307 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/0272 ,  H01L31/0328 ,  H01L31/03762 ,  H01L31/1013

摘要： A multispectral imaging device comprises a first photoelectric conversion module and a second photoelectric conversion module. The first photoelectric conversion module further includes a first photoelectric conversion layer located between a first conducting layer and a second conducting layer. The first conducting layer, coupled to a first constant potential, is configured to allow visible light and infrared light passing through, the first photoelectric conversion layer is configured to convert the visible light into a first electrical signal. The second photoelectric conversion module, formed on a silicon substrate, is configured to receive the infrared light coming from the first photoelectric conversion module. The second photoelectric conversion layer located between a third conducting layer and a fourth conducting layer, wherein the third conducting layer is configured to allow the infrared light passing through, the second photoelectric conversion layer is configured to convert the infrared light into a second electrical signal.

公开(公告)号：US20180358488A1

公开(公告)日：2018-12-13

申请号：US15618748

申请日：2017-06-09

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： YUICHIRO YAMASHITA ,  HSUEH-LIANG CHOU

IPC分类号： H01L31/0352 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L27/1461 ,  H01L27/14625 ,  H01L31/02027 ,  H01L31/035272 ,  H01L31/107 ,  H01L31/1804

摘要： The present disclosure provides a photodiode device, which includes a semiconductor substrate, a well region in the semiconductor substrate of a first dopant type, a first doped region of the first dopant type in the well region, and a second doped region of a second dopant type disposed in the well region and over the first doped region. The second doped region comprises first recesses exposed through a surface of the second doped region, and a first portion of the second doped region on the surface comprises a first doping concentration of the second dopant type greater than a second doping concentration of a second portion of the second doped region away from the first recesses.

公开(公告)号：US20180278809A1

公开(公告)日：2018-09-27

申请号：US15918622

申请日：2018-03-12

申请人： SEIKO EPSON CORPORATION

发明人： Shunichi SHIMA

IPC分类号： H04N1/62 ,  H01L27/146 ,  H04N1/60 ,  H04N1/031 ,  H04N1/48

CPC分类号： H04N1/626 ,  H01L27/1461 ,  H04N1/0315 ,  H04N1/401 ,  H04N1/48 ,  H04N1/6086

摘要： An image reading device that reads an image including a fluorescent color, including: a first light source having a maximum light emission intensity at a first wavelength; a second light source having a maximum light emission intensity at a second wavelength that is longer than the first wavelength; and an image reading chip configured to read the image. The image reading chip includes a pixel including a photodetector that performs photoelectric conversion on light received from the image, and the spectral sensitivity of the photodetector when photoelectric conversion is performed takes a maximum value at light having a wavelength in a region from 400 nm to 500 nm inclusive.

公开(公告)号：US20180277575A1

公开(公告)日：2018-09-27

申请号：US15914505

申请日：2018-03-07

申请人： CANON KABUSHIKI KAISHA

发明人： Hajime Ikeda ,  Masahiro Kobayashi

IPC分类号： H01L27/146 ,  H04N5/374 ,  H04N5/359 ,  B60W30/09

CPC分类号： H01L27/1461 ,  B60W30/09 ,  B60W2420/403 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14656 ,  H04N5/359 ,  H04N5/374

摘要： A solid-state imaging device includes a plurality of pixels each including a photoelectric conversion unit, a first holding portion holding charges transferred from the photoelectric conversion unit, a second holding portion holding charges transferred from the first holding portion, and an amplifier unit outputting a signal based on charges in the second holding portion. The photoelectric conversion unit includes a first conductivity type first semiconductor region, a second conductivity type second semiconductor region thereunder, a first conductivity type third semiconductor region thereunder, and a second conductivity type fourth semiconductor region thereunder. The first holding portion includes a second conductivity type fifth semiconductor region and a first conductivity type sixth semiconductor region thereunder at a depth of the third semiconductor region being provided. A semiconductor region having a lower potential than the third semiconductor region and the sixth semiconductor region is provided between the third and sixth semiconductor regions.

公开(公告)号：US20180269242A1

公开(公告)日：2018-09-20

申请号：US15760743

申请日：2016-09-16

申请人： National University Corporation Shizuoka University

发明人： Shoji KAWAHITO ,  Min-Woong SEO

IPC分类号： H01L27/146 ,  H04N5/374 ,  H04N5/361

CPC分类号： H01L27/14612 ,  H01L27/1461 ,  H04N5/357 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3742

摘要： A semiconductor element includes a semiconductor region (11) of a first conductivity type, a buried charge-generation region (16) of a second conductivity type, buried in an upper portion of the semiconductor region (11) to implement a photodiode (D1) together with the semiconductor region (11) to generate charges, a charge-readout region (15) of the second conductivity type, provided in the semiconductor region (11) to accumulate the charges transferred from the buried charge-generation region (16), and a reset-performing region (12) of the second conductivity type, provided in the semiconductor region (11), a variable voltage is applied to the reset-performing region (12) to change the height of a potential barrier generated in the semiconductor region (11) sandwiched between the charge-readout region (15) and the reset-performing region (12) to exhaust the charges accumulated in the charge-readout region (15). The semiconductor element has a high pixel conversion gain, ultralow noise of a photon counting level and implements a solid-state imaging device.