公开(公告)号：US09362512B2

公开(公告)日：2016-06-07

申请号：US14364376

申请日：2012-12-12

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Isao Yahagi

IPC分类号： H01L51/40 ,  H01L51/05 ,  H01B3/44

CPC分类号： H01L51/052 ,  C08F12/22 ,  C08F212/14 ,  H01B3/442 ,  H01B3/447 ,  H01B3/448 ,  H01L51/0036 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0533 ,  H01L51/0545 ,  C08F2220/325 ,  C08F2220/346 ,  C08F220/44

摘要： Insulating layer material comprising: polymer compound of a repeating unit containing a cyclic ether structure and a repeating unit of the formula: wherein R5 represents a hydrogen atom or a methyl group; Rb b represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R′ represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; the suffix b represents an integer of 0 or 1, and the suffix n represents an integer of from 1 to 5; when there are two or more Rs, they may be the same or different; and when there are two or more R's, they may be the same or different; and tungsten (V) alkoxide.

摘要翻译： 绝缘层材料包括：含有环醚结构的重复单元的高分子化合物和下式的重复单元：其中R5代表氢原子或甲基; Rb b表示将高分子化合物的主链与高分子化合物的侧链连接并且任选地具有氟原子的连接部分; R表示能够被酸分离的有机基团; R'表示氢原子或碳原子数1〜20的任选具有氟原子的一价有机基团， 后缀b表示0或1的整数，后缀n表示1〜5的整数， 当有两个或更多卢比时，它们可能相同或不同; 当有两个或更多个R时，它们可以相同或不同; 和钨（V）醇盐。

公开(公告)号：US09263686B2

公开(公告)日：2016-02-16

申请号：US14354755

申请日：2013-11-29

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Xianghua Wang ,  Xianfeng Xiong ,  Ze Liu ,  Longzhen Qiu

IPC分类号： H01L51/05 ,  H01L51/00 ,  H01L51/10

CPC分类号： H01L51/0533 ,  H01L51/0005 ,  H01L51/0529 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor and a manufacturing method thereof are provided. The organic thin film transistor comprises: a substrate; a gate electrode layer (21) and a source/drain electrode layer (24), formed on the substrate; an organic semiconductor layer (25), formed between source and drain electrodes (24) of the source/drain electrode layer; and an organic insulating layer (23), formed between the gate electrode layer (21) and the organic semiconductor layer (25) and made from an organic polymer material.

摘要翻译： 提供有机薄膜晶体管及其制造方法。 有机薄膜晶体管包括：基板; 形成在所述基板上的栅极电极层（21）和源极/漏极电极层（24） 形成在源极/漏极电极层的源极和漏极之间的有机半导体层（25）; 和形成在栅电极层（21）和有机半导体层（25）之间并由有机聚合物材料制成的有机绝缘层（23）。

公开(公告)号：US08912535B2

公开(公告)日：2014-12-16

申请号：US13942642

申请日：2013-07-15

申请人： Georgia Tech Research Corporation

发明人： Lauren E. Polander ,  Shree Prakash Tiwari ,  Seth Marder ,  Bernard Kippelen ,  Raghunath R. Dasari ,  Yulia A. Getmanenko ,  Do Kyung Hwang ,  Mathieu Fenoll

IPC分类号： H01L21/44 ,  H01L51/00

CPC分类号： H01L51/0072 ,  C07D519/00 ,  C09K11/06 ,  H01L51/0005 ,  H01L51/0053 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0074 ,  H01L51/0533 ,  H01L51/0541

摘要： The various inventions and/or their embodiments disclosed herein relate to certain naphthalene diimide (NDI) compounds wherein the NDI groups are bonded to certain subclasses of bridging heteroaryl (hAr) groups, such as the “NDI-hAr-NDI” oligomeric compounds, wherein hAr is a heteroaryl group chosen to provide desirable electronic and steric properties, and the possible identities of the “Rz” terminal peripheral substituent groups are described herein. Transistor and inverter devices can be prepared.

摘要翻译： 本文公开的各种发明和/或其实施方案涉及某些萘二酰亚胺（NDI）化合物，其中NDI基团键合到桥连杂芳基（hAr）基团的某些亚类，例如“NDI-hAr-NDI”寡聚化合物，其中 hAr是选择以提供所需的电子和空间特性的杂芳基，并且本文描述了“R z”末端外围取代基的可能标识。 可以制作晶体管和逆变器。

公开(公告)号：US20140120721A1

公开(公告)日：2014-05-01

申请号：US14135503

申请日：2013-12-19

申请人： Creator Technology B. V.

发明人： Christoph Wilhelm SELE ,  Monica Johanna BEENHAKKERS ,  Gerwin Hermanus GELINCK ,  Nicollaas Aldegonda Jan Maria VAN AERLE ,  Hjalmar Edzer Ayco HUITEMA

IPC分类号： H01L21/283

CPC分类号： H01L21/283 ,  H01L21/31133 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/0021 ,  H01L51/0533

摘要： A method of manufacturing an electric component disclosed. A first electrically conducting layer including a first electrode of the electric component is formed on a substrate. An interlayer of a dielectric material is formed on the first electrically conducting layer, the dielectric material including an electrically insulating material. A further layer of a dielectric material is deposited on the interlayer of dielectric material, the further layer including a photo-patternable electrically insulating material. Both the further layer and said interlayer are structured, wherein the further layer of the dielectric material is used as a mask for the interlayer. A second electrically conducting layer including a second electrode of the electric component is then formed.

摘要翻译： 公开了一种制造电气部件的方法。 包括电气部件的第一电极的第一导电层形成在基板上。 介电材料的中间层形成在第一导电层上，电介质材料包括电绝缘材料。 电介质材料的另一层沉积在电介质材料的中间层上，另一层包括可光刻图形的电绝缘材料。 另外的层和所述中间层都被构造，其中电介质材料的另一层用作中间层的掩模。 然后形成包括电气部件的第二电极的第二导电层。

公开(公告)号：US08686530B2

公开(公告)日：2014-04-01

申请号：US12669676

申请日：2008-07-16

申请人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria Van Aerle ,  Hjalmar Edzer Ayco Huitema

发明人： Christoph Wilhelm Sele ,  Monica Johanna Beenhakkers ,  Gerwin Hermanus Gelinck ,  Nicolaas Aldegonda Jan Maria Van Aerle ,  Hjalmar Edzer Ayco Huitema

IPC分类号： H01L29/02

CPC分类号： H01L21/283 ,  H01L21/31133 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/0021 ,  H01L51/0533

摘要： An electronic component, notably one including, for example, a TFT, a storage capacitor, or a crossing between electrically conductive layers of a stack device is disclosed. The electronic component comprises a substrate whereon a first electrically conductive layer forming electrode is provided. A second electrode formed by a second electrically conductive layer is separated from the first electrode by at least a dielectric layer, comprising an interlayer of an electrically insulating material, preferably having high resistance against electrical breakdown and a further layer of a photo-patternable electrically insulating material.

摘要翻译： 公开了一种电子部件，特别是包括例如TFT，存储电容器或堆叠装置的导电层之间的交叉的电子部件。 电子部件包括设置有第一导电层形成电极的基板。 由第二导电层形成的第二电极通过至少一个电介质层与第一电极分开，该电介质层包括电绝缘材料的中间层，优选地具有高的电击穿电阻，以及另一层可光电构造的电绝缘层 材料。

公开(公告)号：US20130292650A1

公开(公告)日：2013-11-07

申请号：US13670001

申请日：2012-11-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ji-Young JUNG ,  Joo-Young KIM ,  Hyeok KIM

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0004 ,  H01L51/0005 ,  H01L51/0533 ,  H01L51/102

摘要： According to example embodiments, a method of manufacturing an organic thin film transistor includes sequentially forming a gate electrode, a gate insulator, a source electrode, and a drain electrode on a substrate, forming a first self-assembled monolayer on the source electrode and the drain electrode from a first self-assembled monolayer precursor, forming a second self-assembled monolayer on the gate insulator from a second self-assembled monolayer precursor that is different from the first self-assembled monolayer precursor, and forming an organic semiconductor on the first self-assembled monolayer and the second self-assembled monolayer. The first self-assembled monolayer and the second self-assembled monolayer may be formed simultaneously or sequentially in a single container. An organic thin film transistor may be manufactured according to the method. A display device may include the organic thin film transistor.

摘要翻译： 根据示例性实施例，制造有机薄膜晶体管的方法包括在基板上依次形成栅电极，栅极绝缘体，源电极和漏电极，在源极上形成第一自组装单层， 漏电极从第一自组装单层前体形成，在第二自组装单层前体上形成第二自组装单层，该第二自组装单层前体与第一自组装单层前体不同，并在第一自组装单层前体上形成有机半导体 自组装单层和第二自组装单层。 第一自组装单层和第二自组装单层可以在单个容器中同时或顺序形成。 可以根据该方法制造有机薄膜晶体管。 显示装置可以包括有机薄膜晶体管。

公开(公告)号：US08399881B2

公开(公告)日：2013-03-19

申请号：US13103293

申请日：2011-05-09

申请人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

发明人： Mikio Yukawa ,  Nobuharu Ohsawa ,  Yoshinobu Asami

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L27/1255 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/105 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/11286 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/13 ,  H01L27/285 ,  H01L51/0042 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/0533

摘要： On object of the invention is to provide a nonvolatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer.

摘要翻译： 本发明的目的是提供一种非易失性存储器件，其中可以通过重写来制造处理和伪造等以及包括存储器件的半导体器件，可以将数据添加到存储器件。 本发明的另一个目的是提供一种高度可靠，便宜且非易失性的存储器件和包括存储器件的半导体器件。 存储元件包括第一导电层，第二导电层，与第一导电层接触的厚度为0.1nm以上且4nm以下的第一绝缘层，以及介于第一导电层之间的有机化合物层 层，第一绝缘层和第二导电层。

公开(公告)号：US20120248425A1

公开(公告)日：2012-10-04

申请号：US13499279

申请日：2012-02-08

申请人： Hoi Chang Yang ,  Mi Jang

发明人： Hoi Chang Yang ,  Mi Jang

IPC分类号： H01L51/10 ,  B32B27/32 ,  B05D5/00 ,  B32B27/06 ,  B05D3/02 ,  H01L51/40 ,  B32B27/36

CPC分类号： H01L51/0533 ,  C08G2261/3223 ,  C08G2261/92 ,  H01L51/0053 ,  H01L51/0094 ,  H01L51/0529 ,  H01L51/0545 ,  Y10T428/265 ,  Y10T428/3154 ,  Y10T428/31663 ,  Y10T428/31725 ,  Y10T428/31786 ,  Y10T428/31935

摘要： The present invention relates to a hybrid layer including an oxide layer or organic layer, and organic polymer layer, an insulating layer including the hybrid layer, and an electronic device such as an organic field-effect transistor. A hybrid layer according to the present invention may include an oxide layer or an organic layer, and an organic polymer layer chemically combined with the oxide layer or the organic layer.

摘要翻译： 本发明涉及包括氧化物层或有机层，有机聚合物层，包括混合层的绝缘层和诸如有机场效应晶体管的电子器件的混合层。 根据本发明的混合层可以包括氧化物层或有机层，以及与氧化物层或有机层化学结合的有机聚合物层。

公开(公告)号：US20120104377A1

公开(公告)日：2012-05-03

申请号：US13346119

申请日：2012-01-09

申请人： Do Hwan KIM ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

发明人： Do Hwan KIM ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

IPC分类号： H01L51/10

CPC分类号： H01L51/0533

摘要： Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

摘要翻译： 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

公开(公告)号：US20110240980A1

公开(公告)日：2011-10-06

申请号：US13080564

申请日：2011-04-05

申请人： Peng Wei ,  Zhenan Bao

发明人： Peng Wei ,  Zhenan Bao

IPC分类号： H01L51/10 ,  H01L51/40 ,  H01B1/12 ,  H01B1/04 ,  C07F5/02 ,  C07D409/04 ,  C07D235/18 ,  C07D409/14 ,  C07F7/18 ,  B82Y30/00

CPC分类号： C07D235/18 ,  B82Y10/00 ,  B82Y30/00 ,  C07D409/04 ,  C07D409/14 ,  H01L51/0047 ,  H01L51/0048 ,  H01L51/005 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/0566 ,  H01L51/5004 ,  H01L51/5296 ,  Y02E10/549 ,  Y02P70/521

摘要： In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below −2.5 eV to effect such n-type doping.

摘要翻译： 根据各种实施方案，有机电子器件包括n型掺杂剂材料，其包括在氮原子之间键合有氢基材料的咪唑类材料。 n型掺杂剂材料掺杂有机材料，并且可以用于减轻由于诸如暴露于环境大气的条件而导致的迁移率的降低，这可能导致电荷传输的不期望的减少。 其他实施方案涉及具有这种类型的n型掺杂剂的碳纳米管或石墨烯结构，其中碳纳米管或石墨烯结构的费米能级低于-2.5eV以实现这种n型掺杂。