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41.发明申请公开(公告)号：US20160118773A1
公开(公告)日：2016-04-28
申请号：US14803244
申请日：2015-07-20
申请人： FUJI XEROX CO., LTD.
发明人： Junichiro HAYAKAWA , Masaya KUMEI , Akemi MURAKAMI , Takashi KONDO , Kazutaka TAKEDA , Jun SAKURAI
CPC分类号： H01S5/2202 , H01S5/0282 , H01S5/0425 , H01S5/18308 , H01S5/18313 , H01S5/18344 , H01S2301/176
摘要： Provided is a surface-emitting semiconductor laser device including a substrate; a semiconductor layer formed on the substrate, the semiconductor layer including a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type, the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity; and an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove.
摘要翻译： 提供了一种包括基板的表面发射半导体激光器件; 形成在所述基板上的半导体层，所述半导体层包括第一导电类型的第一半导体多层膜，有源区和第二导电类型的第二半导体多层膜，所述第一半导体多层膜和所述第二半导体多层膜 形成一个空腔; 以及抗氧化结构，其包括沿半导体层的外周的至少一部分形成的槽和形成在槽的表面上的抗氧化部。
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42.发明授权公开(公告)号：US08537870B2
公开(公告)日：2013-09-17
申请号：US13188208
申请日：2011-07-21
申请人： Naoto Jikutani , Shunichi Sato
发明人： Naoto Jikutani , Shunichi Sato
IPC分类号： H01S5/00
CPC分类号： H01S5/2202 , B82Y20/00 , H01S5/22 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/2231 , H01S5/3201 , H01S5/3434
摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.
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43.发明申请公开(公告)号：US20130230068A1
公开(公告)日：2013-09-05
申请号：US13821186
申请日：2011-09-07
IPC分类号： H01S5/22
CPC分类号： H01S5/2202 , H01S5/0425 , H01S5/2219 , H01S5/222 , H01S5/2231 , H01S5/4031 , H01S2301/176
摘要： An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.
摘要翻译： 边缘发射半导体激光二极管包括外延半导体层堆叠和平坦化层。 半导体层堆叠包括主体和脊状波导。 主体包括用于产生电磁辐射的有源层。 平坦化层嵌入脊状波导，使得脊状波导的表面和平坦化层的表面形成平坦的主表面。 还公开了一种用于制造这种半导体激光二极管的方法。
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44.发明申请公开(公告)号：US20130223462A1
公开(公告)日：2013-08-29
申请号：US13802239
申请日：2013-03-13
发明人： Scott Eugene Olson
CPC分类号： H01S5/0425 , G02B6/4274 , G02B6/43 , H01L33/382 , H01L33/385 , H01L33/387 , H01S5/02248 , H01S5/02272 , H01S5/02453 , H01S5/042 , H01S5/20 , H01S5/2202 , H01S5/34
摘要： A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.
摘要翻译： 激光二极管包括衬底和布置在衬底上的接合层。 结层形成激光二极管的量子阱。 激光二极管包括具有至少一个通道的接合面，该通道延伸穿过接合层到基底。 至少一个通道限定阳极区域和阴极区域。 阴极电接点设置在阴极区域的结表面上，并且阳极电连接点设置在接合面上并且在阳极区域处耦合到接合层。 阴极金属层设置在通道的至少沟槽区域中。 阴极金属层将衬底耦合到阴极电连接。
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公开(公告)号：US08477820B2
公开(公告)日：2013-07-02
申请号：US13267080
申请日：2011-10-06
申请人： Yutaka Onishi
发明人： Yutaka Onishi
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , H01L2224/48091 , H01L2224/48227 , H01S5/06226 , H01S5/2202 , H01S2301/176 , H01L2924/00014
摘要： A semiconductor laser device includes a first semiconductor stack portion that includes a grating layer and an active layer provided on the grating layer. The grating layer has a first region and second region; a diffraction grating provided in the first region; a semiconductor ridge structure portion provided on the first semiconductor stack portion and extending in a first direction; and a pair of first trenches provided along both side faces of the semiconductor ridge structure portion with the first region of the grating layer being located between the trenches. The first trenches penetrate through the grating layer. The first region of the grating layer has an end extending in a second direction intersecting with the first direction. The end of the first region of the grating layer reaches a trench.
摘要翻译： 半导体激光器件包括第一半导体叠层部分，其包括光栅层和设置在光栅层上的有源层。 光栅层具有第一区域和第二区域; 设置在所述第一区域中的衍射光栅; 设置在所述第一半导体堆叠部分上并沿第一方向延伸的半导体脊结构部分; 以及沿着半导体脊结构部分的两个侧面设置的一对第一沟槽，其中光栅层的第一区域位于沟槽之间。 第一沟槽穿过光栅层。 光栅层的第一区域具有沿与第一方向交叉的第二方向延伸的端部。 光栅层的第一区域的末端到达沟槽。
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公开(公告)号：US20120146068A1
公开(公告)日：2012-06-14
申请号：US13375723
申请日：2010-06-09
申请人： Kristian Groom , Richard Hogg
发明人： Kristian Groom , Richard Hogg
IPC分类号： H01L33/30
CPC分类号： H01S5/50 , H01S5/1014 , H01S5/168 , H01S5/205 , H01S5/2202 , H01S5/2209 , H01S5/2231
摘要： Embodiments of the present invention provided a method of fabricating a semiconductor light source structure. The method comprises providing a GaAs substrate; forming a lower cladding layer above the substrate, the lower cladding layer comprising an AIxGa1-xAs alloy; forming an active region above the lower cladding layer, the active region comprising a GaAs separate confinement heterostructure; and forming an upper cladding layer comprising an AIxGa1-xAs alloy above the active region in the form of an elongate stripe bounded on either side by an InGaP current-blocking layer, the elongate stripe defining an index-guided optical waveguide. The stripe is formed such that at least one free end of the stripe is spaced apart from an edge of the substrate in a direction parallel to a longitudinal axis of the stripe such that a portion of the lower cladding layer, active region, current blocking layer and upper cladding layer extend beyond the at least one free end of the stripe thereby to provide an unpumped and laterally unguided window region.
摘要翻译： 本发明的实施例提供了一种制造半导体光源结构的方法。 该方法包括提供GaAs衬底; 在所述衬底上形成下包层，所述下包层包含Al x Ga 1-x As合金; 在所述下包层上形成有源区，所述有源区包括GaAs分离的限制异质结构; 并且在InGaP电流阻挡层的任一侧上以细长条纹的形式在有源区上方形成包括Al x Ga 1-x As合金的上包层，该细长条限定了折射率引导光波导。 条纹形成为使得条带的至少一个自由端在平行于条纹的纵向轴线的方向上与基底的边缘间隔开，使得下包层的一部分，有源区，电流阻挡层 并且上包层延伸超过条带的至少一个自由端，从而提供未抽空和横向未导向的窗口区域。
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公开(公告)号：US08000365B2
公开(公告)日：2011-08-16
申请号：US12501778
申请日：2009-07-13
申请人： Norio Ikedo , Masao Kawaguchi , Masaaki Yuri
发明人： Norio Ikedo , Masao Kawaguchi , Masaaki Yuri
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0658 , H01S5/2004 , H01S5/2202 , H01S5/2231
摘要： A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2
摘要翻译： 半导体激光器件包括由形成在衬底上的III族氮化物半导体制成的多层结构。 多层结构包括MQW有源层，并且还包括在其上部选择性地形成的台阶区域。 在多层结构的另一上部形成有与多层结构体的主面平行地延伸的波导状的棱条部。 在步进区域附近，形成其中MQW活性层具有Eg1的带隙能的第一区域和与第一区域相邻并且其中MQW活性层具有带隙的第二区域 形成Eg2的能量（Eg2
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公开(公告)号：US20110069730A1
公开(公告)日：2011-03-24
申请号：US12564302
申请日：2009-09-22
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0425 , H01S5/0655 , H01S5/2202 , H01S2301/18
摘要： A semiconductor light-emitting device has, in place of a traditional separate cladding layer and contact structure, a non-epitaxial contact and waveguide layer. The non-epitaxial contact and waveguide layer is formed of a conductive material and such that it has a recess therein and over the injection region. Air filling the region together with appropriate choice of material for the non-epitaxial contact and waveguide layer creates desired lateral waveguiding. Metallic silver in one choice for this material. The recess may also be filled with a low-loss material having a refractive index higher than that of the material forming the non-epitaxial contact and waveguide layer. Transparent conductive oxides (e.g., indium tin oxide (ITO), zinc oxide (ZnO), etc.), appropriate metal (e.g., gold), or a composite comprising a conductive oxide and a metal, provide low absorption in the UV and near-IR wavelengths of interest, and are thus good candidate materials for within the recess.
摘要翻译： 一种半导体发光器件代替传统的独立包层和接触结构，具有非外延接触和波导层。 非外延接触和波导层由导电材料形成，并且其在其中和在注入区域上具有凹部。 填充该区域的空气与用于非外延接触和波导层的材料的适当选择产生所需的横向波导。 金属银在这种材料的一个选择。 该凹部也可以填充折射率高于形成非外延接触和波导层的材料的折射率的低损耗材料。 透明导电氧化物（例如，氧化铟锡（ITO），氧化锌（ZnO）等），合适的金属（例如金）或包含导电氧化物和金属的复合材料在UV和附近提供低吸收 -IR波长，因此是凹陷内的良好候选材料。
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公开(公告)号：US07672347B2
公开(公告)日：2010-03-02
申请号：US11125703
申请日：2005-05-10
申请人： Yuichi Kuromizu
发明人： Yuichi Kuromizu
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/2202 , H01S5/2215 , H01S5/34326
摘要： A semiconductor light emitting device includes: a substrate; a laminate structure including a first semiconductor layer, an active layer, and a second semiconductor layer; and a current confinement part for limiting a current injection region of the active layer in the second semiconductor layer, or between the active layer and the second semiconductor layer, on the substrate, wherein the current confinement part includes a current confinement layer having a conductive region corresponding to the current injection region of the active layer and a nonconductive region corresponding to a region other than the current injection region of the active layer, and an intermediate layer provided between the current confinement layer and the second semiconductor layer or the active layer in order to prevent a mixed crystal from being formed between the current confinement layer and the second semiconductor layer or the active layer.
摘要翻译： 一种半导体发光器件，包括：衬底; 包括第一半导体层，有源层和第二半导体层的层压结构; 以及电流限制部件，用于限制所述衬底上的所述第二半导体层中的有源层或所述有源层和所述第二半导体层之间的有源层的电流注入区域，其中所述电流限制部分包括具有导电区域的电流限制层 对应于有源层的电流注入区域和对应于有源层的电流注入区域以外的区域的非导电区域，以及按顺序设置在电流限制层和第二半导体层或有源层之间的中间层 以防止在电流限制层和第二半导体层或有源层之间形成混晶。
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公开(公告)号：US20100027575A1
公开(公告)日：2010-02-04
申请号：US12501778
申请日：2009-07-13
申请人： Norio Ikedo , Masao Kawaguchi , Masaaki Yuri
发明人： Norio Ikedo , Masao Kawaguchi , Masaaki Yuri
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0658 , H01S5/2004 , H01S5/2202 , H01S5/2231
摘要： A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2
摘要翻译： 半导体激光器件包括由形成在衬底上的III族氮化物半导体制成的多层结构。 多层结构包括MQW有源层，并且还包括在其上部选择性地形成的台阶区域。 在多层结构的另一上部形成有与多层结构体的主面平行地延伸的波导状的棱条部。 在步进区域附近，形成其中MQW活性层具有Eg1的带隙能的第一区域和与第一区域相邻并且其中MQW活性层具有带隙的第二区域 形成Eg2的能量（Eg2
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