Portable electronic device
    41.
    发明授权
    Portable electronic device 有权
    便携式电子设备

    公开(公告)号:US08129632B2

    公开(公告)日:2012-03-06

    申请号:US12453742

    申请日:2009-05-20

    IPC分类号: H01L23/045 H01L23/055

    CPC分类号: H04M1/0216 H04M1/18

    摘要: In order to provide a portable electronic device improved in water tightness by a simple method, the portable electronic device includes: a housing assembled from a plurality of housing pieces via a sealing member and having a built-in electronic circuit; and a flat cable group in which a plurality of flat cables having a plurality of electric signal lines aligned and connected to the electronic circuit are stacked in a thickness direction, and adjacent flat cables are bonded to each other via an adhesive material at least at a point in an overall length, the flat cable group being integrally molded with the sealing member of the housing at the point.

    摘要翻译: 为了通过简单的方法提供改进的防水性的便携式电子设备,便携式电子设备包括:通过密封构件从多个壳体件组装并具有内置电子电路的壳体; 以及扁平电缆组,其中具有排列并连接到电子电路的多个电信号线的多条扁平电缆在厚度方向上堆叠,并且相邻的扁平电缆至少通过粘合材料彼此接合 在整个长度上指示,扁平电缆组在该点处与壳体的密封构件整体模制。

    Metal casing for semiconductor device having high thermal conductivity
and thermal expansion coefficient
    45.
    发明授权
    Metal casing for semiconductor device having high thermal conductivity and thermal expansion coefficient 失效
    具有高导热性和热膨胀系数的半导体器件金属外壳

    公开(公告)号:US5574959A

    公开(公告)日:1996-11-12

    申请号:US306955

    申请日:1994-09-16

    摘要: A metal casing for a semiconductor device is manufactured by a powder metallurgy injection molding process which uses infiltration. The metal casing includes a base member and an enclosure member arranged on the base member. The base member and the enclosure member are formed of an alloy including 20 to 50 percent by volume of copper, equal to or less than 1 percent by weight of nickel and remainder of tungsten or molybdenum. The metal casing is manufactured as a net-shape product by a process which includes the steps of mixing tungsten powder and nickel powder having average particles sizes equal to or less than 40 .mu.m so as to form mixed metal powder, kneading the mixed metal powder with an organic binder so as to form an admixture, injection molding said admixture so as to form a predetermined green shape, debinderizing said green shape, applying surface powder to at least one surface of the green shape so as to prevent effusion of copper during infiltration and infiltrating copper into the green shape so as to produce a net-shape product.

    摘要翻译: 用于半导体器件的金属外壳通过使用渗透的粉末冶金注塑工艺制造。 金属外壳包括基座构件和布置在基座构件上的外壳构件。 基部构件和外壳构件由包含20至50体积%的铜,等于或小于1重量%的镍和其余的钨或钼的合金形成。 通过包括以下步骤制造金属外壳作为网状产品,该方法包括将钨粉末和平均粒径等于或小于40μm的镍粉混合以形成混合金属粉末,将混合的金属粉末 与有机粘合剂一起形成混合物,注射成型所述混合物以形成预定的绿色形状,剥离所述绿色形状,将表面粉末施加至至少一个绿色表面,以防止渗透时铜渗出 并将铜浸入绿色形状以产生网状产品。

    Transistor structure and method of manufacture
    49.
    发明授权
    Transistor structure and method of manufacture 失效
    晶体管结构及其制造方法

    公开(公告)号:US3750271A

    公开(公告)日:1973-08-07

    申请号:US3750271D

    申请日:1972-01-31

    发明人: DUPUIS J

    IPC分类号: H01L23/045 B01J17/00

    摘要: This invention relates to an improved transistor structure, particularly a ''''12-type'''' germanium alloy transistor. The invention also relates to a method of manufacturing such a transistor, wherein the semiconductor device is free to move during attachment thereto of the connecting leads, thereby eliminating stress upon the device.

    摘要翻译: 本发明涉及一种改进的晶体管结构,特别是涉及一种“12型”锗合金晶体管。 本发明还涉及一种制造这种晶体管的方法,其中半导体器件在连接引线的附接期间自由移动,从而消除器件上的应力。