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1637 条记录 (耗时 0.042 秒)

    Control valve for a variable displacement compressor
    51.
    发明授权
    Control valve for a variable displacement compressor 有权

    公开(公告)号：US09903362B2

    公开(公告)日：2018-02-27

    申请号：US14324035

    申请日：2014-07-03

    申请人： TGK CO., LTD.

    发明人： Shinji Saeki ,  Masaaki Tonegawa

    IPC分类号： F04B49/22 ,  F04B27/18 ,  F25B1/00

    CPC分类号： F04B49/225 ,  F04B27/1804 ,  F04B2027/1813 ,  F04B2027/1827 ,  F04B2027/1831 ,  F25B1/005

    摘要： In a control valve, the spring load of a spring, which biases a main valve element in a valve opening direction, is regulated, for instance. This allows a range of suction pressures Ps, where a main valve and a sub-valve are simultaneously closed until a sub-valve element is lifted from a sub-valve seat after a main valve element has been seated on a main valve seat, to be set as a deadband. The control valve is configured such that the value of a suction pressure Ps with which to open the sub-valve after the closing of the main valve and the pressure values at which the deadband takes place are set variably by the setting of a value of current supplied to the solenoid.

    System, method and apparatus for ion milling in a plasma etch chamber
    52.
    发明授权
    System, method and apparatus for ion milling in a plasma etch chamber 有权

    公开(公告)号：US09899227B2

    公开(公告)日：2018-02-20

    申请号：US13771519

    申请日：2013-02-20

    申请人： Lam Research Corporation

    发明人： Joydeep Guha ,  Butsurin Jinnai ,  Jun Hee Han ,  Aaron Eppler

    IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/02

    CPC分类号： H01L21/3065 ,  H01J37/32403 ,  H01J37/32715 ,  H01J37/32926 ,  H01L21/02057 ,  H01L21/02071

    摘要： A system and method of ion milling performed in a plasma etch system including a plasma etch chamber, multiple process gas sources coupled to the plasma etch chamber, a radio frequency bias source and a controller. The plasma etch chamber including a substrate support. The substrate support being a non-pivoting and non-rotating substrate support. The substrate support capable of supporting a substrate to be processed on a top surface of the substrate support without use of a mechanical clamp device. The plasma etch chamber also including an upper electrode disposed opposite from the top surface of the substrate support. The radio frequency bias source is coupled to the substrate support. The controller is coupled to the plasma etch chamber, the multiple process gas sources and the radio frequency bias source. The controller including logic stored on computer readable media for performing an ion milling process in the plasma etch chamber.

    Air cooled faraday shield and methods for using the same
    53.
    发明授权
    Air cooled faraday shield and methods for using the same 有权

    公开(公告)号：US09885493B2

    公开(公告)日：2018-02-06

    申请号：US13974324

    申请日：2013-08-23

    申请人： Lam Research Corporation

    发明人： Saravanapriyan Sriraman ,  John Drewery ,  Jon McChesney ,  Alex Paterson

    IPC分类号： C23C16/00 ,  H01L21/306 ,  F24F13/00 ,  H01J37/32

    CPC分类号： F24F13/00 ,  H01J37/321 ,  H01J37/32522 ,  H01J37/32651 ,  H01J37/32963

    摘要： A processing chamber and a Faraday shield system for use in a plasma processing chambers are provided. One system includes a disk structure defining a Faraday shield, and the disk structure has a process side and a back side. The disk structure extends between a center region to a periphery region. The disk structure resides within the processing volume. The system also includes a hub having an internal plenum for passing a flow of air received from an input conduit and removing the flow of air from an output conduit. The hub has an interface surface that is coupled to the back side of the disk structure at the center region. A fluid delivery control is coupled to the input conduit of the hub. The fluid delivery control is configured with a flow rate regulator. The regulated air can be amplified or compressed dry air (CDA).

    Multi-radiofrequency impedance control for plasma uniformity tuning
    55.
    发明授权
    Multi-radiofrequency impedance control for plasma uniformity tuning 有权

    公开(公告)号：US09881772B2

    公开(公告)日：2018-01-30

    申请号：US13433004

    申请日：2012-03-28

    申请人： Alexei Marakhatanov ,  Rajinder Dhindsa

    发明人： Alexei Marakhatanov ,  Rajinder Dhindsa

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

    CPC分类号： H01J37/32091 ,  H01J37/32165

    摘要： Circuits, methods, chambers, systems, and computer programs are presented for processing wafers. A wafer processing apparatus includes top and bottom electrodes inside a processing chamber; a first, second, third, and fourth radio frequency (RF) power sources; and one or more resonant circuits. The first, second, and third RF power sources are coupled to the bottom electrode. The top electrode may be coupled to the fourth RF power source, to electrical ground, or to the one or more resonant circuits. Each of the one or more resonant circuits, which are coupled between the top electrode and electrical ground, include a tune-in element operable to vary a frequency-dependent impedance presented by the resonant circuit. The wafer processing apparatus is configurable to select the RF power sources for wafer processing operations, as well as the connections to the top electrode in order to provide plasma and etching uniformity for the wafer.

    Workpiece structures and apparatus for accessing same
    57.
    发明授权
    Workpiece structures and apparatus for accessing same 有权

    公开(公告)号：US09878453B2

    公开(公告)日：2018-01-30

    申请号：US14452490

    申请日：2014-08-05

    申请人： Brooks Automation, Inc.

    发明人： Anthony C. Bonora

    IPC分类号： B66F19/00 ,  B25J15/00 ,  H01L21/673 ,  H01L21/687 ,  B65G65/00

    CPC分类号： B25J15/0028 ,  B65G65/00 ,  H01L21/67383 ,  H01L21/68707

    摘要： A workpiece container stores at least one workpiece having a bottom surface and a peripheral edge. In one embodiment, a workpiece support structure is located within the container enclosure, which forms multiple vertically stacked storage shelves within the enclosure. Each storage shelf includes, in one embodiment, a first tine and a second tine for supporting the workpiece in a substantially horizontal orientation. The bottom surface and peripheral edge of a workpiece seated on a storage shelf extends beyond the outer edge of both the first tine and the second tine. An end effector may engage these extended portions or “grip zones” of the workpiece.

    User identification management system and method
    59.
    发明授权
    User identification management system and method 有权

    公开(公告)号：US09876646B2

    公开(公告)日：2018-01-23

    申请号：US15147838

    申请日：2016-05-05

    申请人： ShoCard, Inc.

    发明人： Armin Ebrahimi ,  Jeff Weitzman

    IPC分类号： H04L9/32 ,  H04L9/16 ,  H04L9/30

    CPC分类号： H04L9/3297 ,  H04L9/3234 ,  H04L9/3236 ,  H04L9/3263 ,  H04L2209/38 ,  H04L2209/56

    摘要： Systems and methods for managing the identity of a user, for managing the identity of the user in a public storage facility, and for certifying pending transactions for a user are disclosed. One example method includes receiving, at an input device, personal data that identifies the user. The personal data is represented as input data. The input device is configured to process a hashing function to provide a hash value and user accessible interface for transmitting the hash value and a public key of the user to the public storage facility, e.g., block chain, and for receiving back from the public storage facility a transaction number corresponding to the hash value and the public key. In one example, the input device is configured to encrypt the hash value, a time stamp and the transaction number with a public key of a certification entity to provide user certifiable data to the certification entity. The certification entity is configured to access the public storage facility to verify the user. Also provided are systems and methods for certifying pending financial transactions, pending debit and/or credit card transactions, and other pending transactions are also disclosed. Systems and methods signing and certifying documents are also disclosed.