公开(公告)号：US07217321B2

公开(公告)日：2007-05-15

申请号：US10810350

申请日：2004-03-26

申请人： Carl L. Hansen ,  Stephen R. Quake ,  James M. Berger

发明人： Carl L. Hansen ,  Stephen R. Quake ,  James M. Berger

IPC分类号： C30B29/16

CPC分类号： C30B29/16 ,  B01F5/10 ,  B01F5/108 ,  B01F13/0059 ,  B01L3/06 ,  B01L3/50273 ,  B01L3/502738 ,  B01L3/502784 ,  B01L2200/0605 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2300/0867 ,  B01L2300/088 ,  B01L2300/123 ,  B01L2400/0481 ,  B01L2400/0655 ,  C30B7/00 ,  C30B7/14 ,  C30B29/58

摘要： The present invention relates to microfluidic devices and methods facilitating the growth and analysis of crystallized materials such as proteins. In accordance with one embodiment, a crystal growth architecture is separated by a permeable membrane from an adjacent well having a much larger volume. The well may be configured to contain a fluid having an identity and concentration similar to the solvent and crystallizing agent employed in crystal growth, with diffusion across the membrane stabilizing that process. Alternatively, the well may be configured to contain a fluid having an identity calculated to affect the crystallization process. In accordance with the still other embodiment, the well may be configured to contain a material such as a cryo-protectant, which is useful in protecting the crystalline material once formed.

摘要翻译： 本发明涉及促进结晶物质如蛋白质生长和分析的微流体装置和方法。 根据一个实施例，晶体生长结构由具有大得多体积的相邻阱的可渗透膜分离。 该孔可以被配置成包含具有与晶体生长中使用的溶剂和结晶剂相似的特性和浓度的流体，并且通过膜的扩散稳定了该过程。 或者，孔可以被配置为包含具有计算以影响结晶过程的同一性的流体。 根据另一个实施方案，所述孔可以被配置为容纳诸如冷冻保护剂的材料，其可用于在形成后保护结晶材料。

公开(公告)号：US07052545B2

公开(公告)日：2006-05-30

申请号：US09887997

申请日：2001-06-22

申请人： Stephen R. Quake ,  Carl L. Hansen

发明人： Stephen R. Quake ,  Carl L. Hansen

IPC分类号： C30B7/08

CPC分类号： C30B29/00 ,  B01D9/00 ,  B01D9/0072 ,  B01D9/0077 ,  B01J19/0046 ,  B01J2219/00274 ,  B01J2219/00286 ,  B01J2219/00317 ,  B01J2219/00389 ,  B01J2219/00418 ,  B01J2219/00432 ,  B01J2219/00585 ,  B01J2219/00756 ,  B01J2219/00891 ,  B01J2219/00907 ,  B01J2219/00952 ,  B01L3/06 ,  B01L3/5025 ,  B01L3/50273 ,  B01L3/502738 ,  B01L3/502753 ,  B01L7/54 ,  B01L9/527 ,  B01L2200/025 ,  B01L2200/027 ,  B01L2200/0605 ,  B01L2200/10 ,  B01L2300/0681 ,  B01L2300/0816 ,  B01L2300/0861 ,  B01L2300/123 ,  B01L2300/14 ,  B01L2300/18 ,  B01L2400/0481 ,  B01L2400/0655 ,  B01L2400/0688 ,  B81B2201/051 ,  B81B2201/054 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00119 ,  B81C99/0065 ,  C30B7/14 ,  C30B29/54 ,  C30B29/58 ,  F04B43/043 ,  F16K99/0001 ,  F16K99/0015 ,  F16K99/0046 ,  F16K99/0051 ,  F16K99/0059 ,  F16K2099/0074 ,  F16K2099/0078 ,  F16K2099/008 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024

摘要： High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.

公开(公告)号：US06899137B2

公开(公告)日：2005-05-31

申请号：US09826583

申请日：2001-04-06

申请人： Marc A. Unger ,  Hou-Pu Chou ,  Todd A. Thorsen ,  Axel Scherer ,  Stephen R. Quake ,  Markus M. Enzelberger ,  Mark L. Adams ,  Carl L. Hansen

发明人： Marc A. Unger ,  Hou-Pu Chou ,  Todd A. Thorsen ,  Axel Scherer ,  Stephen R. Quake ,  Markus M. Enzelberger ,  Mark L. Adams ,  Carl L. Hansen

IPC分类号： B01L3/00 ,  B01L7/00 ,  B01L9/00 ,  B67D99/00 ,  B81B1/00 ,  B81B3/00 ,  B81C1/00 ,  C12Q1/68 ,  F04B43/04 ,  F15C5/00 ,  F16K7/00 ,  F16K31/126 ,  F16K99/00 ,  F15C1/06

CPC分类号： B05D3/04 ,  B01J2219/00355 ,  B01J2219/00378 ,  B01J2219/00396 ,  B01J2219/00398 ,  B01J2219/00439 ,  B01J2219/005 ,  B01J2219/00527 ,  B01J2219/00605 ,  B01J2219/00612 ,  B01J2219/00621 ,  B01J2219/00659 ,  B01J2219/00707 ,  B01J2219/00722 ,  B01J2219/00725 ,  B01L3/502707 ,  B01L3/50273 ,  B01L3/502738 ,  B01L7/54 ,  B01L9/527 ,  B01L2200/025 ,  B01L2200/027 ,  B01L2200/0605 ,  B01L2200/10 ,  B01L2300/0681 ,  B01L2300/0861 ,  B01L2300/0887 ,  B01L2300/123 ,  B01L2300/14 ,  B01L2300/18 ,  B01L2400/046 ,  B01L2400/0481 ,  B01L2400/06 ,  B01L2400/0655 ,  B01L2400/0688 ,  B32B2037/1081 ,  B65B31/00 ,  B81B2201/036 ,  B81B2201/054 ,  B81C1/00119 ,  B81C2201/019 ,  C12Q1/6832 ,  C12Q1/6874 ,  C30B29/54 ,  F04B43/043 ,  F15C1/06 ,  F15C3/00 ,  F15C5/00 ,  F16K99/0001 ,  F16K99/0015 ,  F16K99/0046 ,  F16K99/0051 ,  F16K99/0059 ,  F16K2099/0074 ,  F16K2099/0076 ,  F16K2099/0078 ,  F16K2099/008 ,  F16K2099/0084 ,  F16K2099/0094 ,  Y10T137/0324 ,  Y10T137/0379 ,  Y10T137/0424 ,  Y10T137/206 ,  Y10T137/2082 ,  Y10T137/2164 ,  Y10T137/2169 ,  Y10T137/2174 ,  Y10T137/2202 ,  Y10T137/2224 ,  Y10T137/3084 ,  Y10T137/7837 ,  Y10T137/86027 ,  Y10T156/10 ,  Y10T428/24479 ,  Y10T428/24612 ,  C12Q2535/125

摘要： A method of fabricating an elastomeric structure, comprising: forming a first elastomeric layer on top of a first micromachined mold, the first micromachined mold having a first raised protrusion which forms a first recess extending along a bottom surface of the first elastomeric layer; forming a second elastomeric layer on top of a second micromachined mold, the second micromachined mold having a second raised protrusion which forms a second recess extending along a bottom surface of the second elastomeric layer; bonding the bottom surface of the second elastomeric layer onto a top surface of the first elastomeric layer such that a control channel forms in the second recess between the first and second elastomeric layers; and positioning the first elastomeric layer on top of a planar substrate such that a flow channel forms in the first recess between the first elastomeric layer and the planar substrate.