公开(公告)号：US20070111528A1

公开(公告)日：2007-05-17

申请号：US10581601

申请日：2004-12-03

申请人： Masaru Sasaki ,  Shinji Ide ,  Shigenori Ozaki

发明人： Masaru Sasaki ,  Shinji Ide ,  Shigenori Ozaki

IPC分类号： H01L21/4763 ,  H01L21/302

CPC分类号： H01L21/02063 ,  H01J2237/335 ,  H01L21/02068 ,  H01L21/76814 ,  H01L21/76838

摘要： A method of cleaning a semiconductor substrate conductive layer surface that can remove a residual organic material and a natural oxide satisfactorily and does not adversely affect a k value without damaging the side-wall insulation film of a via hole. A semiconductor device, including insulation films formed on the surface of a conductive layer of a semiconductor substrate and a via hole formed in an insulation film to partly expose the conductive layer, is carried into a reaction vessel, plasma including hydrogen is generated in the reaction vessel to clean the surface of the conductive layer at the bottom of the via hole, a residual organic material is decomposed and removed by ashing, and a copper oxide film on the surface of the conductive layer is reduced to Cu.

摘要翻译： 一种清洁可以令人满意地除去残留的有机材料和天然氧化物的半导体衬底导电层表面的方法，并且不损害k值而不损坏通孔的侧壁绝缘膜。 包括形成在半导体衬底的导电层的表面上的绝缘膜和形成在绝缘膜中以部分地暴露导电层的通孔的半导体器件被携带到反应容器中，在反应中产生包括氢的等离子体 容器清洁通孔底部的导电层的表面，残留的有机材料通过灰化分解和除去，导电层表面上的氧化铜膜被还原为Cu。

公开(公告)号：US20070098890A1

公开(公告)日：2007-05-03

申请号：US10572477

申请日：2004-09-17

申请人： Masaru Sasaki ,  Satohiko Hoshino ,  Shinji Ide ,  Yusaku Kashiwagi

发明人： Masaru Sasaki ,  Satohiko Hoshino ,  Shinji Ide ,  Yusaku Kashiwagi

IPC分类号： C23C16/00 ,  H05H1/24 ,  B05D3/00 ,  G06F19/00 ,  H01L21/306 ,  C23F1/00 ,  B29C71/04

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01J37/32192 ,  H01J37/32935 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3003 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/31633

摘要： The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.

摘要翻译： 本发明涉及通过化学气相沉积工艺形成的包括Si，O和CH的绝缘膜的介电常数降低的方法。 将含有氢原子的工艺气体供给到反应容器中。 将微波引入反应容器中以提供均匀的电磁波，从而在反应容器中产生含有氢自由基的等离子体。 绝缘膜的结构被照射到绝缘膜上的等离子体中所含的氢原子改性，降低了膜的介电常数。 通过径向天线将微波提供给反应容器。

公开(公告)号：US07114837B2

公开(公告)日：2006-10-03

申请号：US10819122

申请日：2004-04-07

申请人： Seiichiro Yagi ,  Kazutami Oishi ,  Takashi Inoue ,  Masaru Sasaki

发明人： Seiichiro Yagi ,  Kazutami Oishi ,  Takashi Inoue ,  Masaru Sasaki

IPC分类号： F21V14/00

CPC分类号： F21V29/74 ,  F21S41/147 ,  F21S41/155 ,  F21S43/50 ,  F21S45/43 ,  F21S45/47 ,  F21S45/48 ,  F21S45/60 ,  F21Y2115/10

摘要： A plurality of lighting units using light emitting diodes as light sources is accommodated in a lamp housing in such a state as to be supported on a common metallic support member provided tiltably. When a part or all of the lighting units are turned on, the light emitting diodes generate heat with a light emission. These light emitting diodes are supported on the common metallic support member. Also in the case in which any of the lighting units is turned on, therefore, the heat generated by the light emitting diodes is moved to the metallic support member having a large heat capacity through boards and light source support blocks by a heat conducting function. Consequently, a rise in the temperatures of the light emitting diodes can be suppressed.

摘要翻译： 使用发光二极管作为光源的多个照明单元被容纳在灯壳体中，以便被支撑在可倾斜地设置的公共金属支撑构件上。 当部分或全部照明单元接通时，发光二极管产生具有发光的热量。 这些发光二极管被支撑在公共金属支撑构件上。 因此，在任何照明单元接通的情况下，由发光二极管产生的热量通过导热功能通过板和光源支撑块移动到具有大的热容量的金属支撑构件。 因此，能够抑制发光二极管的温度上升。

公开(公告)号：US20060099799A1

公开(公告)日：2006-05-11

申请号：US11266308

申请日：2005-11-04

申请人： Masayuki Kohno ,  Masaru Sasaki

发明人： Masayuki Kohno ,  Masaru Sasaki

IPC分类号： H01L21/4763 ,  H05H1/20

CPC分类号： H01L21/76826 ,  C23C16/401 ,  C23C16/56 ,  H01J37/3222 ,  H01J37/32935 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/31633

摘要： A plasma processing method of carrying out curing processing on a low dielectric constant film produced on a to-be-processed substrate by applying plasma thereto in a processing chamber of a plasma processing apparatus, includes the steps of: a) introducing, in the plasma processing chamber, a first gas having a function of stabilizing plasma and a second gas generating active hydrogen, and, after that; b) generating plasma, and carrying out curing processing on the low dielectric constant film.

摘要翻译： 在等离子体处理装置的处理室中，通过在等离子体处理装置的处理室中对等离子体进行等离子体处理的基板上的低介电常数膜进行固化处理的等离子体处理方法包括以下步骤：a）在等离子体 处理室，具有稳定等离子体的功能的第一气体和产生活性氢的第二气体，之后; b）产生等离子体，并对低介电常数膜进行固化处理。

公开(公告)号：US4349851A

公开(公告)日：1982-09-14

申请号：US152818

申请日：1980-05-23

申请人： Noboru Higashiyama ,  Masaru Sasaki

发明人： Noboru Higashiyama ,  Masaru Sasaki

IPC分类号： G11B17/32 ,  G11B5/55 ,  G11B5/58 ,  G11B21/16 ,  G11B5/54 ,  G11B21/22

CPC分类号： G11B5/58 ,  G11B5/5521

摘要： A magnetic head supporting mechanism for a double side type flexible disc drive apparatus is rotatably driven and contains a first and second magnetic head for read-out or write-in on each magnetic recording surface of the disc. The magnetic head is slidably contacted with the surface during the operation and includes a carriage having a first and second magnetic head which is positioned on a predetermined data track of the disc with the carriage having first and second arms and one of the arms being rotated with the first and second magnetic head assemblies being mounted on the first and second arm respectively. One of the magnetic head assemblies contains a resilient holder affixed to the arm and simultaneously fixed to the magnetic head while a gimbal spring which is disposed on the holder and has a surface fitted to the head also contains a projection which is formed on the other surface. A point member is fixed on the holder at one end and is fitted in such a manner that it contacts the projection of the gimbal spring on the other end.

摘要翻译： 用于双面型软盘驱动装置的磁头支撑机构被可旋转地驱动并且包含用于在盘的每个磁记录表面上读出或写入的第一和第二磁头。 磁头在操作期间与表面滑动接触，并且包括具有第一和第二磁头的滑架，该第一和第二磁头位于盘的预定数据轨道上，其中滑架具有第一和第二臂，并且其中一个臂与 第一和第二磁头组件分别安装在第一和第二臂上。 磁头组件中的一个包括固定到臂上并且同时固定到磁头的弹性保持器，而设置在保持器上并具有与头部嵌合的表面的万向弹簧也包含形成在另一表面上的突起 。 点构件在一端固定在保持器上，并且以这样一种方式安装，使得它与另一端的万向弹簧的突起接触。

公开(公告)号：US09324572B2

公开(公告)日：2016-04-26

申请号：US13582523

申请日：2011-03-03

申请人： Masaru Sasaki ,  Kazuki Moyama ,  Masaki Inoue ,  Yoko Noto

发明人： Masaru Sasaki ,  Kazuki Moyama ,  Masaki Inoue ,  Yoko Noto

IPC分类号： H01L21/461 ,  H01L21/311 ,  H01J37/32 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/31116 ,  H01J37/32192 ,  H01J37/32238 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/7833

摘要： Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O2, CO2, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.

摘要翻译： 提供了提高氮化硅膜相对于用作基底的氧化硅膜或硅的选择性的等离子体蚀刻方法。 在等离子体蚀刻方法中，通过在将处理气体供应到处理容器中的同时排出处理气体而将处理容器中的压力设定为预定水平，通过向处理容器供给外部能量来产生等离子体，并且设定施加到保持 将处理容器中的基板保持为预定值，以相对于硅和/或氧化硅膜选择性地蚀刻氮化硅膜，处理气体包括等离子体激发气体，CH x F y气体和至少一种选择的氧化气体 来自由O 2，CO 2，CO组成的组和氧化气体相对于CH x F y气体的流量设定为4/9以上。

公开(公告)号：US09285435B2

公开(公告)日：2016-03-15

申请号：US13805031

申请日：2011-06-23

申请人： Yoshihiro Konno ,  Masaru Sasaki

发明人： Yoshihiro Konno ,  Masaru Sasaki

IPC分类号： G01R33/02 ,  G01R33/032

CPC分类号： G01R33/032

摘要： A two-core optical fiber magnetic field sensor is configured from at least a light incidence/emission unit; a lens; a magnetic garnet; and a reflector, wherein the lens and the magnetic garnet are disposed between the light incidence/emission end of the light incidence/emission unit and the reflector; a light beam is emitted from one optical fiber; the light beam is reflected by the reflector after being transmitted through the lens and the magnetic garnet; the light beam is transmitted again through the magnetic garnet and the lens after the reflection; and incident on the other optical fiber, the light beam is emitted again from the other optical fiber, and reflected by the reflector after being transmitted through the lens and the magnetic garnet; and the light beam is transmitted again through the magnetic garnet and the lens after the reflection and incident again on the one optical fiber.

摘要翻译： 两芯光纤磁场传感器由至少一个入射/发射单元构成; 镜头 磁石榴石 以及反射器，其中所述透镜和所述磁性石榴石设置在所述光入射/发射单元的光入射/发射端与所述反射器之间; 从一根光纤射出光束; 光束在透射透镜和磁性石榴石后被反射器反射; 反射后光束再次通过磁石榴石和透镜传播; 入射到另一根光纤上时，光束再次从另一根光纤发射，并被反射器透射后通过透镜和磁性石榴石反射; 并且在反射之后光束再次通过磁性石榴石和透镜再次传输到一根光纤上。

公开(公告)号：US09277637B2

公开(公告)日：2016-03-01

申请号：US13885708

申请日：2011-11-16

申请人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

发明人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC分类号： H01L21/306 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

摘要翻译： 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：US09218983B2

公开(公告)日：2015-12-22

申请号：US14131713

申请日：2012-07-12

申请人： Takashi Dokan ,  Masaru Sasaki ,  Hikaru Kamata

发明人： Takashi Dokan ,  Masaru Sasaki ,  Hikaru Kamata

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/033

CPC分类号： H01L21/3065 ,  H01J2237/334 ,  H01L21/0206 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069

摘要： The etching method of the present invention comprises first and second etching steps (S1, S3) having different types of films to be etched and different types of process gases. During a transition from the first etching step (S1) to the second etching step (S3), a first switching process step (S2) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the first etching step. During a transition from the second etching step (S3) to the first etching step (S1), a second switching process step (S4) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the second etching step.

摘要翻译： 本发明的蚀刻方法包括具有不同类型的被蚀刻膜和不同类型的工艺气体的第一和第二蚀刻步骤（S1，S3）。 在从第一蚀刻步骤（S1）到第二蚀刻步骤（S3）的转变期间，执行第一切换处理步骤（S2），其中处理容器填充有清洁气体，并且清洁气体变成等离子体 以在第一蚀刻步骤中除去沉积在处理容器中的反应产物。 在从第二蚀刻步骤（S3）到第一蚀刻步骤（S1）的转变期间，执行第二切换处理步骤（S4），其中处理容器填充有清洁气体，并且清洁气体变成等离子体 以在第二蚀刻步骤中除去沉积在处理容器中的反应产物。

公开(公告)号：US08957667B2

公开(公告)日：2015-02-17

申请号：US13321396

申请日：2010-05-18

申请人： Yoshihiro Konno ,  Masaru Sasaki

发明人： Yoshihiro Konno ,  Masaru Sasaki

IPC分类号： G01R19/00 ,  G01R15/24 ,  G01R19/32

CPC分类号： G01R15/246 ,  G01R15/245 ,  G01R19/32

摘要： An electric measuring apparatus is constructed in such a way as to include a signal processing circuit equipped with at least a polarized light separating unit, Faraday rotators, a light source, a photoelectric conversion element, and optical fibers for a sensor. The optical fibers for the sensor are placed around the periphery of an electrical conductor through which electric current to be measured flows. Furthermore, the rotation angle of each Faraday rotator at the time when the magnetism of each Faraday rotator is saturated is set to 22.5°+α° at a temperature of 23° C., thereby changing the rotation angle of each Faraday rotator by α° from 22.5°.

摘要翻译： 电测量装置的构成包括：至少配备有偏振光分离单元，法拉第旋转器，光源，光电转换元件和用于传感器的光纤的信号处理电路。 用于传感器的光纤被放置在要测量的电流流过的电导体的周围。 此外，每个法拉第旋转器的磁性饱和时的每个法拉第旋转器的旋转角度在23℃的温度下设定为22.5°+α°，从而将每个法拉第旋转器的旋转角度改变α° 从22.5°。